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公开(公告)号：US5504356A
公开(公告)日：1996-04-02
申请号：US152505
申请日：1993-11-16
申请人： Yukihiro Takeuchi , Toshimasa Yamamoto , Yoshinori Ohtsuka , Shigeyuki Akita , Tadashi Hattori , Kazuhiko Kanou , Hirotane Ikeda
发明人： Yukihiro Takeuchi , Toshimasa Yamamoto , Yoshinori Ohtsuka , Shigeyuki Akita , Tadashi Hattori , Kazuhiko Kanou , Hirotane Ikeda
CPC分类号： G01P15/124 , G01P15/0802
摘要： This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof.An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4. This sensor can detect acceleration from the change (increase/decrease) of a current between the fixed electrodes 8 and 9 resulting from the displacement of the movable electrode 4 due to acceleration.
摘要翻译： 本发明的目的在于提供一种新型的半导体加速度计，其包括较少数量的基板及其制造方法。 在P型硅基板的主平面上形成绝缘膜，在绝缘膜上形成有束状的可动电极。 然后通过将杂质扩散到P型硅衬底中，在可动电极的两侧与可动电极自对准地形成固定电极，蚀刻除去可动电极下面的绝缘膜。 因此，制造了包括P型硅衬底1，具有光束结构的可动电极4并且在它们之间具有预定间隙并且设置在P型硅衬底1上方的固定电极8,9的半导体加速度计， 该杂质扩散层形成在与可动电极4自对准的P型硅衬底1上的可动电极4的两侧。该传感器可以从电流的变化（增加/减少） 固定电极8和9由于加速而由可动电极4的位移而产生。
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公开(公告)号：US5500549A
公开(公告)日：1996-03-19
申请号：US357258
申请日：1994-12-13
IPC分类号： G01P15/08 , B81B3/00 , B81C1/00 , G01C19/56 , G01C19/5755 , G01C19/5769 , G01P15/14 , H01L29/84 , H01L29/82
CPC分类号： G01C19/5719 , G01P2015/0814 , Y10S73/01
摘要： A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.
摘要翻译： 半导体偏航率传感器，其可以通过IC制造工艺容易地构造，使得通过晶体管结构获得由于电流值引起的横摆率检测信号，并且公开了其制造方法。 由光束支撑的重量从半导体衬底的表面以规定的间隔设置，并且可动电极和激励电极与该重量一体地形成。 用于激发使用的固定电极对应于激发电极固定到基板。 与此同时，源电极和漏电极通过在与可动电极相对的位置的基板的表面上的扩散层形成，使得漏极电流随着可可电极的位移而变化 由于偏航率，并且由该电流检测到横摆率。
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公开(公告)号：US5572057A
公开(公告)日：1996-11-05
申请号：US360940
申请日：1994-12-21
IPC分类号： G01P15/08 , G01P15/125 , H01L29/82
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0828 , Y10S73/01
摘要： Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.
摘要翻译： 通过新的结构避免了由于半导体衬底和可移动电极之间的静电力引起的不利影响。 光束结构的可移动电极以指定的间隔设置在p型硅衬底上方。 每个由杂质扩散层构成的固定电极设置在p型硅衬底上的可移动电极的两侧; 这些固定电极相对于可动电极自对准。 可移动电极伴随着加速度的作用而移动，并且通过由该位移产生的固定电极之间的电流的变化（波动）来检测加速度。 另外，可动电极向上移动用的电极设置在可动电极的上方，在可动电极向上移动用的电极之间施加电位差，并且可移动电极对硅衬底的吸引力为 缓解
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4.发明授权Semiconductor sensor with suspended microstructure and method for fabricating same 失效具有悬浮微结构的半导体传感器及其制造方法
公开(公告)号：US5622633A
公开(公告)日：1997-04-22
申请号：US516414
申请日：1995-08-17
CPC分类号： G01P15/0802 , G01P15/124 , G01P2015/0814
摘要： An MISFET type semiconductor sensor, which can avoid deterioration of characteristics, and a method for fabricating same are disclosed. Silicon oxide films and a silicon nitride film are formed on an upper surface of a p-type silicon substrate, and a movable portion is disposed above the silicon nitride film with a predetermined interval interposed therebetween. A movable gate electrode portion exists on a portion of the movable portion and is displaced by acceleration. Fixed electrodes (a source/drain portion) composed of an impurity diffusion layer are formed on the p-type silicon substrate, and a flowing current changes due to a change in a relative position with the movable gate electrode portion due to acceleration. Projections for movable-range restriction use are provided on a lower surface of the movable portion other than the movable gate electrode portion, and form a gap which is narrower than a gap between the p-type silicon substrate and movable gate electrode portion.
摘要翻译： 公开了一种能够避免特性恶化的MISFET型半导体传感器及其制造方法。 氧化硅膜和氮化硅膜形成在p型硅衬底的上表面上，并且可移动部分以其间插入预定间隔设置在氮化硅膜的上方。 可动栅电极部分存在于可动部分的一部分上并被加速度位移。 在p型硅衬底上形成由杂质扩散层构成的固定电极（源极/漏极部分），并且由于加速而与可动栅电极部分的相对位置的变化导致流动电流变化。 可移动范围限制使用的投影设置在可移动部分以外的可移动栅电极部分的下表面上，并且形成比p型硅基板和可动栅电极部分之间的间隙窄的间隙。
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5.发明授权Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body 失效具有悬浮薄膜结构的半导体传感器和用于制造薄膜结构体的方法
公开(公告)号：US5922212A
公开(公告)日：1999-07-13
申请号：US663001
申请日：1996-06-07
申请人： Kazuhiko Kano , Kenichi Nara , Toshimasa Yamamoto , Nobuyuki Kato , Yoshitaka Gotoh , Yoshinori Ohtsuka , Kenichi Ao
发明人： Kazuhiko Kano , Kenichi Nara , Toshimasa Yamamoto , Nobuyuki Kato , Yoshitaka Gotoh , Yoshinori Ohtsuka , Kenichi Ao
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , C23F1/00
CPC分类号： G01P15/125 , B81B3/0072 , B81C1/00666 , G01P15/0802 , B81C2201/0164 , B81C2201/0167 , B81C2201/017 , G01P2015/0814
摘要： A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.
摘要翻译： 公开了一种具有薄膜结构体的半导体传感器，其薄膜结构被防止由于厚度方向上的内部应力分布而弯曲。 在硅衬底上形成氧化硅膜作牺牲层，在氧化硅膜上形成多晶硅薄膜。 此后，将磷（P）离子注入多晶硅薄膜的表面，从而改变多晶硅薄膜的表面状态。 通过该变形例改变在多晶硅薄膜的厚度方向上存在的应力分布的一部分，并且调整应力分布。 通过去除氧化硅膜，多晶硅薄膜的可移动部件设置在硅衬底之上，其间插入间隙。
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公开(公告)号：US5396247A
公开(公告)日：1995-03-07
申请号：US31262
申请日：1993-03-15
CPC分类号： G04F10/005 , H03M1/14 , H03M1/0619 , H03M1/502 , H03M1/60
摘要： A pulse circulating circuit includes inverting circuits each for inverting an input signal and outputting an inversion of the input signal. A time of signal inversion by each of the inverting circuits varies in accordance with a power supply voltage applied thereto. One of the inverting circuits constitutes an inverting circuit for starting which is controllable in inversion operation. The pulse circulating circuit circulates a pulse signal therethrough after the inverting circuit for starting starts to operate. An input terminal subjected to an analog voltage signal is connected to power supply lines of the respective inverting circuits for applying the analog voltage signal to the inverting circuits as a power supply voltage fed thereto. A counter serves to count a number of times of complete circulation of the pulse signal through the pulse circulating circuit. A circulation position detecting device serves to detect a circulation position of the pulse signal in the pulse circulating circuit on the basis of output signals of the respective inverting circuits. A control device is operative for activating the inverting circuit for starting and thereby starting pulse circulating operation of the pulse circulating circuit, and for activating the circulation position detecting means at a moment which follows a moment of starting pulse circulating operation by a given time. An output device is operative for outputting digital data as an A/D conversion result. The A/D conversion result data has lower bits composed of output digital data of the circulation position detecting device, and higher bits composed of output digital data of the counter.
摘要翻译： 脉冲循环电路包括各自用于反相输入信号并输出输入信号的反相的反相电路。 每个反相电路的信号反转时间根据施加到其上的电源电压而变化。 反相电路中的一个构成在反转操作中可控制的用于启动的反相电路。 脉冲循环电路在用于启动的反相电路开始运行之后循环脉冲信号。 经受模拟电压信号的输入端子连接到各个反相电路的电源线，用于将模拟电压信号作为馈送到其的电源电压施加到反相电路。 计数器用于通过脉冲循环回路计数脉冲信号的完全循环次数。 循环位置检测装置用于根据各个反相电路的输出信号检测脉冲信号在脉冲循环电路中的循环位置。 控制装置用于启动反相电路，用于启动脉冲循环电路的脉冲循环操作，从而启动循环位置检测装置，该脉冲循环位置检测装置在与给定时间一起启动脉冲循环操作的瞬间激活。 输出装置用于输出数字数据作为A / D转换结果。 A / D转换结果数据具有由循环位置检测装置的输出数字数据组成的较低位，以及由计数器的输出数字数据构成的较高位。
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7.发明授权Physical quantity detection device for converting a physical quantity into a corresponding time interval 失效用于将物理量转换为对应的时间间隔的物理量检测装置
公开(公告)号：US5686835A
公开(公告)日：1997-11-11
申请号：US589093
申请日：1996-01-19
CPC分类号： G01R33/09
摘要： A magnetic detection device including at least one oscillator circuit having a magnetoresistance element which converts a change of magnetism detected into a digital signal and a comparator for comparing the digitalized oscillating frequency of the oscillator circuit with another digitalized oscillating frequency generated from another oscillating circuit by taking a ratio thereof or by detecting a phase difference between the pulse signals. Utilizing the magnetic detection device, the amount of change of magnetism can be stably detected with a high accuracy within a wide range of ambient usage temperatures. The physical quantity detection device includes a magnetic detection device which can detect any physical quantity with a high accuracy.
摘要翻译： 一种磁检测装置，包括至少一个具有将检测到的磁性变化转换为数字信号的磁阻元件的振荡器电路和比较器，用于将振荡器电路的数字化振荡频率与从另一振荡电路产生的另一数字化振荡频率进行比较， 或者通过检测脉冲信号之间的相位差。 利用磁检测装置，能够在宽的环境使用温度范围内以高精度稳定地检测磁性变化量。 物理量检测装置包括能够高精度地检测任何物理量的磁检测装置。
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8.发明授权
公开(公告)号：US5420546A
公开(公告)日：1995-05-30
申请号：US250628
申请日：1994-05-27
CPC分类号： H03L7/0997 , H03L7/0996
摘要： A digitally controllable oscillator is provided with a variable-frequency ring oscillator including an odd number of inverting circuits connected together in a ring formation. The oscillator has a pulse circulation device to circulate a pulse signal through the inverters to introduce some delay in the signal. Digital data is produced by a data controller device. A counter is connected to the pulse circulation device and counts the number of times the pulse signal circulates through the inverters. A pulse is generated at a desired frequency based upon the counter's output and the introduced delay. A control device determines which of a plurality of delay signals is applied to the circuit that generates the pulse at the desired frequency.
摘要翻译： 数字可控振荡器具有可变频率环形振荡器，该可变频率环形振荡器包括在环形结构中连接在一起的奇数个反相电路。 振荡器具有脉冲循环装置，用于通过反相器循环脉冲信号以在信号中引入一些延迟。 数据数据由数据控制器装置产生。 计数器连接到脉冲循环装置，并对脉冲信号通过逆变器循环的次数进行计数。 基于计数器的输出和引入的延迟，以期望的频率产生脉冲。 控制装置确定将多个延迟信号中的哪一个施加到产生所需频率的脉冲的电路。
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9.发明授权Oscillation circuit including a ring oscillator having a changeable number of inverter circuits 失效振荡电路包括具有可变数量的反相器电路的环形振荡器
公开(公告)号：US5331294A
公开(公告)日：1994-07-19
申请号：US956955
申请日：1992-10-02
CPC分类号： H03L7/0997 , H03L7/0996
摘要： A digitally controllable oscillator is provided with a variable-frequency ring oscillator comprising an odd number of inverting circuits connected to each other in a ring. The frequency of the output signal of the ring oscillator is determined by a digital input signal specifying the frequency of the output signal of the ring oscillator. The number of times of circulation of a pulse signal through the ring oscillator is counted. A pulse generator generates a pulse signal upon the coincidence of the counted number of times of circulation of the pulse signal through the ring oscillator with a number corresponding to the digital input signal. A series of these operations is repeated to make the pulse generator generate pulse signals successively at a period corresponding to the digital input signal.
摘要翻译： 数字可控振荡器设置有可变频环形振荡器，该可变频率环形振荡器包括以环形彼此连接的奇数个反相电路。 环形振荡器的输出信号的频率由指定环形振荡器的输出信号的频率的数字输入信号决定。 对通过环形振荡器的脉冲信号的循环次数进行计数。 脉冲发生器根据通过环形振荡器的脉冲信号的循环次数与数字输入信号对应的数字一致，产生脉冲信号。 重复一系列这些操作，使得脉冲发生器在对应于数字输入信号的周期连续地产生脉冲信号。
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10.发明授权Magnetic detection device using an oscillator whose detection element is a magnetoresitance effective element 失效使用振荡器的磁性检测装置，检测元件是磁阻有效元件
公开(公告)号：US5134371A
公开(公告)日：1992-07-28
申请号：US467402
申请日：1990-01-18
申请人： Takamoto Watanabe , Yoshinori Ohtsuka , Muneaki Matsumoto , Tadashi Hattori , Kouichi Hoshino , Masanori Ohsawa , Katsumi Nakamura
发明人： Takamoto Watanabe , Yoshinori Ohtsuka , Muneaki Matsumoto , Tadashi Hattori , Kouichi Hoshino , Masanori Ohsawa , Katsumi Nakamura
摘要： A magnetic detection device including at least one oscillator circuit having a magnetoresistance element which converts a change of magnetism detected into a digital signal and a comparator for comparing the digitalized oscillating frequency of the oscillator circuit with another digitalized oscillating frequency generated from another oscillating circuit by taking a ratio thereof or by detecting a phase difference between the pulse signals. Utilizing the magnetic detection device, the amount of change of magnetism can be stably detected with a high accuracy within a wide range of ambient usage temperatures.Also, a physical quantity detection device including the magnetic detection device which can detect any physical quantity with a high accuracy.
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