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    Semiconductor accelerometer
    1.
    发明授权
    Semiconductor accelerometer 失效
    半导体加速度计

    公开(公告)号：US5504356A

    公开(公告)日：1996-04-02

    申请号：US152505

    申请日：1993-11-16

    申请人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Yoshinori Ohtsuka ,  Shigeyuki Akita ,  Tadashi Hattori ,  Kazuhiko Kanou ,  Hirotane Ikeda

    发明人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Yoshinori Ohtsuka ,  Shigeyuki Akita ,  Tadashi Hattori ,  Kazuhiko Kanou ,  Hirotane Ikeda

    IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L29/78 ,  H01L29/84

    CPC分类号： G01P15/124 ,  G01P15/0802

    摘要： This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof.An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4. This sensor can detect acceleration from the change (increase/decrease) of a current between the fixed electrodes 8 and 9 resulting from the displacement of the movable electrode 4 due to acceleration.

    摘要翻译： 本发明的目的在于提供一种新型的半导体加速度计，其包括较少数量的基板及其制造方法。 在P型硅基板的主平面上形成绝缘膜，在绝缘膜上形成有束状的可动电极。 然后通过将杂质扩散到P型硅衬底中，在可动电极的两侧与可动电极自对准地形成固定电极，蚀刻除去可动电极下面的绝缘膜。 因此，制造了包括P型硅衬底1，具有光束结构的可动电极4并且在它们之间具有预定间隙并且设置在P型硅衬底1上方的固定电极8,9的半导体加速度计， 该杂质扩散层形成在与可动电极4自对准的P型硅衬底1上的可动电极4的两侧。该传感器可以从电流的变化（增加/减少） 固定电极8和9由于加速而由可动电极4的位移而产生。

    Semiconductor yaw rate sensor
    2.
    发明授权
    Semiconductor yaw rate sensor 失效
    半导体偏航率传感器

    公开(公告)号：US5500549A

    公开(公告)日：1996-03-19

    申请号：US357258

    申请日：1994-12-13

    申请人： Yukihiro Takeuchi ,  Kozo Shibata ,  Yoshinori Ohtsuka ,  Kazuhiko Kano ,  Toshimasa Yamamoto

    发明人： Yukihiro Takeuchi ,  Kozo Shibata ,  Yoshinori Ohtsuka ,  Kazuhiko Kano ,  Toshimasa Yamamoto

    IPC分类号： G01P15/08 ,  B81B3/00 ,  B81C1/00 ,  G01C19/56 ,  G01C19/5755 ,  G01C19/5769 ,  G01P15/14 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01C19/5719 ,  G01P2015/0814 ,  Y10S73/01

    摘要： A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.

    摘要翻译： 半导体偏航率传感器，其可以通过IC制造工艺容易地构造，使得通过晶体管结构获得由于电流值引起的横摆率检测信号，并且公开了其制造方法。 由光束支撑的重量从半导体衬底的表面以规定的间隔设置，并且可动电极和激励电极与该重量一体地形成。 用于激发使用的固定电极对应于激发电极固定到基板。 与此同时，源电极和漏电极通过在与可动电极相对的位置的基板的表面上的扩散层形成，使得漏极电流随着可可电极的位移而变化 由于偏航率，并且由该电流检测到横摆率。

    Semiconductor acceleration sensor with movable electrode
    3.
    发明授权
    Semiconductor acceleration sensor with movable electrode 失效
    具有可移动电极的半导体加速度传感器

    公开(公告)号：US5572057A

    公开(公告)日：1996-11-05

    申请号：US360940

    申请日：1994-12-21

    申请人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

    发明人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

    IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/82

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01

    摘要： Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.

    摘要翻译： 通过新的结构避免了由于半导体衬底和可移动电极之间的静电力引起的不利影响。 光束结构的可移动电极以指定的间隔设置在p型硅衬底上方。 每个由杂质扩散层构成的固定电极设置在p型硅衬底上的可移动电极的两侧; 这些固定电极相对于可动电极自对准。 可移动电极伴随着加速度的作用而移动，并且通过由该位移产生的固定电极之间的电流的变化（波动）来检测加速度。 另外，可动电极向上移动用的电极设置在可动电极的上方，在可动电极向上移动用的电极之间施加电位差，并且可移动电极对硅衬底的吸引力为 缓解

    Semiconductor physical-quantity sensor having a locos oxide film, for sensing a physical quantity such as acceleration, yaw rate, or the like
    4.
    发明授权
    Semiconductor physical-quantity sensor having a locos oxide film, for sensing a physical quantity such as acceleration, yaw rate, or the like 失效
    具有氧化皮膜的半导体物理量传感器，用于感测诸如加速度，偏航角速度等的物理量

    公开(公告)号：US6137150A

    公开(公告)日：2000-10-24

    申请号：US540833

    申请日：1995-10-11

    申请人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Tadashi Hattori

    发明人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Tadashi Hattori

    IPC分类号： G01L1/14 ,  B81B3/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  G01P15/12 ,  G01P15/125 ,  G01P15/13 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/131 ,  G01C19/5719 ,  G01P15/097 ,  G01P15/124 ,  G01P2015/0814

    摘要： The present invention provides a semiconductor physical-quantity sensor which can perform measurement of high accuracy without occurrence of deformation or displacement of a fixed electrode for vibration use even if voltage applied to the fixed electrode for vibration use is changed, and which can increase a dielectric breakdown voltage between the fixed electrode for vibration use and a substrate without varying a thickness of an insulative sacrificial layer or causing sacrificial-layer etching time to be affected. A semiconductor physical-quantity sensor according to the present invention forms an electrode-anchor portion on a sufficiently thick insulation film and causes dielectric breakdown voltage with a semiconductor substrate to be increased. In particular, the sufficiently thick insulation film is given by a LOCOS oxide film formed during sensor detection-circuit fabrication or separation of a diffusion electrode.

    摘要翻译： 本发明提供一种半导体物理量传感器，即使施加到用于振动的固定电极的电压发生变化，也可以进行高精度的测量，而不会发生用于振动的固定电极的变形或位移，并且可以增加电介质 在不改变绝缘牺牲层的厚度的情况下，用于振动使用的固定电极和基板之间的击穿电压或者影响牺牲层蚀刻时间。 根据本发明的半导体物理量传感器在足够厚的绝缘膜上形成电极锚固部分，并且使得与半导体衬底的介电击穿电压增加。 特别地，足够厚的绝缘膜由传感器检测电路制造或扩散电极分离期间形成的LOCOS氧化物膜给出。

    Semiconductor physical quantity sensor
    6.
    发明授权
    Semiconductor physical quantity sensor 失效
    半导体物理量传感器

    公开(公告)号：US5987989A

    公开(公告)日：1999-11-23

    申请号：US795402

    申请日：1997-02-05

    申请人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

    发明人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

    IPC分类号： G01P15/125 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/13 ,  H01L29/84

    CPC分类号： B81B7/0006 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/131 ,  B81B2201/0235 ,  G01P2015/0814

    摘要： A semiconductor physical quantity sensor includes a substrate and a beam structure having movable electrodes and spacing a given distance from an upper surface of the substrate. First fixed electrodes and second fixed electrodes are fixedly provided on the upper surface of the substrate. Each first fixed electrode faces one side of the corresponding movable electrode, while each second fixed electrode faces the other side of the corresponding movable electrode. A laminated structure of a lower layer insulating film, conductive films and an upper layer insulating film is arranged at an upper portion of the substrate. The conductive layers form a first wiring pattern for the first fixed electrodes, a second wiring pattern for the second fixed electrodes and a lower electrode. The first wiring pattern is electrically connected to the first fixed electrodes via openings formed in the upper layer insulating film and anchors of the first fixed electrodes, respectively. The second wiring pattern is electrically connected to the second fixed electrodes via openings formed in the upper layer insulating film and anchors of the second fixed electrodes, respectively. The lower electrode is electrically connected to the beam structure via an opening formed in the upper layer insulating film and an anchor of the beam structure.

    摘要翻译： 半导体物理量传感器包括基板和具有可移动电极并且与基板的上表面间隔给定距离的光束结构。 第一固定电极和第二固定电极固定地设置在基板的上表面上。 每个第一固定电极面对相应的可动电极的一侧，而每个第二固定电极面对相应的可移动电极的另一侧。 下层绝缘膜，导电膜和上层绝缘膜的层叠结构设置在基板的上部。 导电层形成用于第一固定电极的第一布线图案，第二固定电极的第二布线图案和下电极。 第一布线图案分别经由形成在上层绝缘膜中的开口和第一固定电极的锚固件电连接到第一固定电极。 第二布线图案分别经由形成在上层绝缘膜中的开口和第二固定电极的锚固件电连接到第二固定电极。 下电极通过形成在上层绝缘膜中的开口和梁结构的锚固件而电连接到梁结构。

    Thermal flow sensor having improved sensing range
    7.
    发明授权
    Thermal flow sensor having improved sensing range 失效
    热流量传感器具有改进的感测范围

    公开(公告)号：US06626037B1

    公开(公告)日：2003-09-30

    申请号：US09515496

    申请日：2000-02-29

    申请人： Hiroyuki Wado ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto

    发明人： Hiroyuki Wado ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto

    IPC分类号： G01F168

    CPC分类号： G01F1/692 ,  G01F1/6845

    摘要： A flow sensor, which can detect flow velocity in a wide range including high flow velocity area with simple structure. A flow sensor includes a substrate having a hollow portion; and a thin film structure portion provided above the hollow portion. The thin film structure portion is provided with a heater formed in a center portion, an upper and a lower stream temperature detectors for detecting temperature of the fluid, a fluid thermometer for detecting temperature of the fluid, and thermal couple films provided on the substrate at a portion, where is between the heater and both temperature detectors. According to this structure, the thermal couple films enhance thermal coupling between the heater and the temperature detectors. Accordingly, it can prevent the temperature of the upper stream temperature detector from falling to around the temperature of the fluid, and it can raise a certain flow velocity at which a cooling of the low stream temperature detector due to the flowing fluid exceeds a heating by the heater. Therefore, it can detect flow velocity in a wide range including high flow velocity area.

    摘要翻译： 一种流量传感器，可以在宽范围内检测流速，包括结构简单的高流速区域。 流量传感器包括具有中空部分的基板; 以及设置在中空部分上方的薄膜结构部分。 薄膜结构部分设置有形成在中心部分的加热器，用于检测流体温度的上下流温度检测器，用于检测流体温度的流体温度计，以及设置在基板上的热耦合膜 加热器和两个温度检测器之间的部分。 根据该结构，热耦合膜增强了加热器和温度检测器之间的热耦合。 因此，能够防止上游温度检测器的温度下降到流体的温度附近，并且能够提高一定的流速，在该流速下，由流动的流体导致的低流量温度检测器的冷却超过加热 加热器。 因此，它可以检测到包括高流速面积在内的宽范围内的流速。

    Flow sensor
    10.
    发明授权
    Flow sensor 有权
    流量传感器

    公开(公告)号：US06701782B2

    公开(公告)日：2004-03-09

    申请号：US10199116

    申请日：2002-07-22

    申请人： Takao Iwaki ,  Toshimasa Yamamoto ,  Hiroyuki Wado ,  Yukihiro Takeuchi

    发明人： Takao Iwaki ,  Toshimasa Yamamoto ,  Hiroyuki Wado ,  Yukihiro Takeuchi

    IPC分类号： G01F168

    CPC分类号： G01F1/692

    摘要： A flow sensor, which includes a diaphragm, is made such that the diaphragm is flat or outwardly deformed to allow fluid flow rate measurements at higher flow rates. The diaphragm is made of an upper set of insulating films, electric devices, and a lower set of insulating films. The component layers of the diaphragm are formed such that the average stress in the upper set of insulating films is more compressive than the average stress in the lower set of insulating films.

    摘要翻译： 包括隔膜的流量传感器被制成使得隔膜是平坦的或向外变形的，以允许在较高流速下进行流体流速测量。 隔膜由上一组绝缘膜，电气设备和下一组绝缘膜制成。 隔膜的部件层形成为使得上部绝缘膜中的平均应力比下部绝缘膜中的平均应力更大的压缩。