Semiconductor yaw rate sensor
    1.
    发明授权
    Semiconductor yaw rate sensor 失效
    半导体偏航率传感器

    公开(公告)号:US5500549A

    公开(公告)日:1996-03-19

    申请号:US357258

    申请日:1994-12-13

    摘要: A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.

    摘要翻译: 半导体偏航率传感器,其可以通过IC制造工艺容易地构造,使得通过晶体管结构获得由于电流值引起的横摆率检测信号,并且公开了其制造方法。 由光束支撑的重量从半导体衬底的表面以规定的间隔设置,并且可动电极和激励电极与该重量一体地形成。 用于激发使用的固定电极对应于激发电极固定到基板。 与此同时,源电极和漏电极通过在与可动电极相对的位置的基板的表面上的扩散层形成,使得漏极电流随着可可电极的位移而变化 由于偏航率,并且由该电流检测到横摆率。

    Semiconductor acceleration sensor with movable electrode
    2.
    发明授权
    Semiconductor acceleration sensor with movable electrode 失效
    具有可移动电极的半导体加速度传感器

    公开(公告)号:US5572057A

    公开(公告)日:1996-11-05

    申请号:US360940

    申请日:1994-12-21

    摘要: Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.

    摘要翻译: 通过新的结构避免了由于半导体衬底和可移动电极之间的静电力引起的不利影响。 光束结构的可移动电极以指定的间隔设置在p型硅衬底上方。 每个由杂质扩散层构成的固定电极设置在p型硅衬底上的可移动电极的两侧; 这些固定电极相对于可动电极自对准。 可移动电极伴随着加速度的作用而移动,并且通过由该位移产生的固定电极之间的电流的变化(波动)来检测加速度。 另外,可动电极向上移动用的电极设置在可动电极的上方,在可动电极向上移动用的电极之间施加电位差,并且可移动电极对硅衬底的吸引力为 缓解

    Capacitance type physical quantity sensor
    4.
    发明授权
    Capacitance type physical quantity sensor 有权
    电容式物理量传感器

    公开(公告)号:US07201053B2

    公开(公告)日:2007-04-10

    申请号:US10834183

    申请日:2004-04-29

    IPC分类号: G01P15/125 G01P9/04

    摘要: A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

    摘要翻译: 电容式物理量传感器检测物理量。 传感器包括可移动部分,其包括可动电极和包括固定电极的固定部分。 固定电极包括面向可动电极的检测面的检测面。 可移动电极可以根据物理量朝向固定电极移动,使得检测表面之间的距离是可变的。 可移动和固定电极中的至少一个包括凹槽。 凹槽设置在可移动和固定电极中的一个的顶部或底部上,具有从顶部或底部的预定深度,并且从检测表面延伸到相对的表面。

    Acceleration sensor having coaxially-arranged fixed electrode and
movable electrode
    5.
    发明授权
    Acceleration sensor having coaxially-arranged fixed electrode and movable electrode 失效
    具有同轴布置的固定电极和可动电极的加速度传感器

    公开(公告)号:US5864064A

    公开(公告)日:1999-01-26

    申请号:US717405

    申请日:1996-09-20

    摘要: An acceleration sensor is constructed by a substrate, a cylindrical dead-weight movable electrode to be displaced by acceleration, a fixed electrode from the inside of which a cylinder is hollowed, a cylindrical anchor arranged on the substrate for supporting the dead-weight movable electrode with elastic transformable structural material and beams. When acceleration is applied from the outside, the cylindrical detecting face of the dead-weight movable electrode and the cylindrical detected face of the fixed electrode are in contact on a two-dimensional plane parallel to the substrate and the acceleration sensor detects the contact. A radial interval between the detecting face of the dead-weight movable electrode and the detected face of the fixed electrode is set in view of the elastic modulus of the beams so that external force can be detected isotropically and the acceleration sensor detects acceleration on a two-dimensional plane nondirectionally.

    摘要翻译: 一个加速度传感器是由一个基板,一个被加速移位的一个圆柱形的自重的可移动电极构成的,一个固定的电极从一个圆柱体中空的一个固定的电极,一个设置在基板上的圆柱形的锚固件,用于支撑自重的可动电极 具有弹性可变形结构材料和梁。 当从外部施加加速度时,固定电极的圆柱形检测面和固定电极的圆柱形检测面在与基板平行的二维平面上接触,并且加速度传感器检测接触。 考虑到光束的弹性模量,设定了自重移动电极的检测面与固定电极的检测面之间的径向间隔,从而可以各向异性地检测外力,并且加速度传感器检测到二次加速度 非定向平面。

    Semiconductor type yaw rate sensor
    6.
    发明授权
    Semiconductor type yaw rate sensor 失效
    半导体型偏航率传感器

    公开(公告)号:US6028332A

    公开(公告)日:2000-02-22

    申请号:US106018

    申请日:1998-06-29

    摘要: A semiconductor type yaw rate sensor has a substrate, a beam structure formed from a semiconductor material and having at least one anchor portion disposed on the substrate, a weighted portion located above the substrate a predetermined gap therefrom, and a beam portion which extends from the anchor portion and supports the weighted portion. A movable electrode is formed onto the weighted portion, and a fixed electrode is formed on the substrate in such a manner that the fixed electrode faces the movable electrode. When a drive voltage is applied between the movable electrode and the fixed electrode, the beam structure is forcibly caused to vibrate in a direction that is horizontal relative to a substrate surface plane. In this yaw rate sensor, a strain gauge to monitor forced vibration of the beam structure is formed in the beam portion. As a result, the forced vibration of the beam structure can be monitored with a simple structure.

    摘要翻译: 半导体型偏航率传感器具有基板,由半导体材料形成的梁结构,并且具有设置在基板上的至少一个锚固部分,位于基板上方的预定间隙的加权部分以及从基板延伸的梁部分 锚固部分​​并支撑加权部分。 可移动电极形成在加权部分上,并且固定电极以固定电极面向可动电极的方式形成在基板上。 当在可动电极和固定电极之间施加驱动电压时,梁结构被强制地沿相对于基板表面的水平方向振动。 在该横摆率传感器中,在梁部形成有用于监视梁结构的强制振动的应变仪。 结果,可以以简单的结构监视梁结构的强制振动。

    Method of manufacturing dynamic amount semiconductor sensor
    8.
    发明授权
    Method of manufacturing dynamic amount semiconductor sensor 失效
    动态量半导体传感器的制造方法

    公开(公告)号:US6048774A

    公开(公告)日:2000-04-11

    申请号:US103935

    申请日:1998-06-25

    摘要: In a method of manufacturing a dynamic amount sensor including a beam structure and a fixed electrode which are respectively supported by anchor parts of a substrate, opening portions are formed on a first semiconductor substrate where the anchor parts are to be formed. Each of the opening portions is composed of a plurality of stripe-like openings. Then a first thin film for forming the anchor parts and a second thin film are formed on the first semiconductor substrate in that order. After the surface of the second thin film is polished, a second semiconductor substrate is bonded to the polished surface of the second thin film. In this method, because the opening portions are composed of the plurality of stripe-like openings, the second thin film is flattened without having any steps thereon.

    摘要翻译: 在制造分别由基板的锚定部支撑的梁结构和固定电极的动态量传感器的制造方法中,在要形成锚定部的第一半导体基板上形成开口部。 每个开口部分由多个条状开口组成。 然后在第一半导体衬底上依次形成用于形成锚定部分的第一薄膜和第二薄膜。 在第二薄膜的表面被抛光之后,第二半导体衬底被结合到第二薄膜的抛光表面上。 在该方法中,由于开口部分由多个条状开口组成,所以第二薄膜在其上没有任何步骤而变平。

    Capacitance type acceleration sensor
    10.
    发明授权
    Capacitance type acceleration sensor 有权
    电容式加速度传感器

    公开(公告)号:US07107846B2

    公开(公告)日:2006-09-19

    申请号:US11265281

    申请日:2005-11-03

    IPC分类号: G01P15/125

    摘要: A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

    摘要翻译: 电容型加速度传感器包括半导体基板,通过弹簧部分支撑在基板上的重量部分,与重物部分一体化的可动电极以及与该基板悬臂连接的固定电极。 根据加速度,可移动电极与可动电极的相对表面一起移动。 可动电极的相对表面面对固定电极的相对表面,以提供电容器。 电容器的电容根据可动电极的位移而变化,使得外部电路作为电容变化来检测加速度。 可移动和固定电极的每个相对表面具有用于增加电容变化的凹凸部分。