公开(公告)号：US10697047B2

公开(公告)日：2020-06-30

申请号：US13323056

申请日：2011-12-12

申请人： Yukimasa Miyata ,  Shinji Yoshihara

发明人： Yukimasa Miyata ,  Shinji Yoshihara

IPC分类号： C22C21/10

摘要： An aluminum alloy extruded material in relation with the present invention is with high strength by die quench air cooling and excellent in SCC resistance. The aluminum alloy extruded material is an Al—Zn—Mg-based aluminum alloy extruded material for structural member for automobiles such as a bumper reinforce, a door guard bar and the like which satisfies three expressions of 5.0≤[Zn]≤7.0, [Zn]/5.38

公开(公告)号：US08876993B2

公开(公告)日：2014-11-04

申请号：US13419798

申请日：2012-03-14

申请人： Yukimasa Miyata ,  Shinji Yoshihara ,  Minwoo Kang

发明人： Yukimasa Miyata ,  Shinji Yoshihara ,  Minwoo Kang

IPC分类号： C22F1/053

CPC分类号： C22F1/053 ,  C21D1/673 ,  C22C21/10

摘要： A casted ingot of a heat treatment type Al—Zn—Mg series aluminum alloy comprising Zn: 4.0-8.0% by mass, Mg: 0.5-2.0% by mass, Cu: 0.05-0.5% by mass, Ti: 0.01-0.1% by mass, and any one or more of Mn: 0.1-0.7% by mass, Cr: 0.1-0.5% by mass and Zr: 0.05-0.3% by mass, and the balance being aluminum and incidental impurities is extruded at a homogenization treatment temperature after a homogenization treatment without cooled, and a resulted extruded material is die quenched at a cooling rate equal to or more than 100° C./min and then subjected to an artificial aging treatment, wherein the homogenization treatment is carried out by heating to the homogenization treatment temperature as 430-500° C. at a heating rate less than 750° C./hr or by heating to the homogenization treatment temperature and held the homogenization treatment temperature for 3 hours.

摘要翻译： 含有Zn：4.0〜8.0质量％，Mg：0.5〜2.0质量％，Cu：0.05〜0.5质量％，Ti：0.01-0.1质量％的热处理型Al-Zn-Mg系铝合金铸造锭， ，Mn：0.1-0.7质量％，Cr：0.1-0.5质量％，Zr：0.05〜0.3质量％中的任一种或以上，余量由铝和附带杂质在均化处理中挤出 未冷却均质处理后的温度，所得到的挤出材料以等于或大于100℃/分钟的冷却速度进行猝熄，然后进行人造时效处理，其中均化处理通过加热至 均质处理温度为430-500℃，加热速率小于750℃/小时或通过加热至均化处理温度并保持均化处理温度3小时。

公开(公告)号：US20130146183A1

公开(公告)日：2013-06-13

申请号：US13323056

申请日：2011-12-12

申请人： Yukimasa MIYATA ,  Shinji Yoshihara

发明人： Yukimasa MIYATA ,  Shinji Yoshihara

IPC分类号： C22C21/10 ,  C22C21/06

摘要： An aluminum alloy extruded material in relation with the present invention is with high strength by die quench air cooling and excellent in SCC resistance. The aluminum alloy extruded material is an Al—Zn—Mg-based aluminum alloy extruded material for structural member for automobiles such as a bumper reinforce, a door guard bar and the like which satisfies three expressions of 5.0≦[Zn]7.0, [Zn]/5.38

摘要翻译： 与本发明相关的铝合金挤压材料通过模淬气冷却具有高强度，并且具有优异的耐SCC性。 铝合金挤压材料是用于汽车结构件的Al-Zn-Mg基铝合金挤压材料，例如保险杠加强件，门防护棒等，其满足5.0 @ [Zn] 7.0，[Zn ] /5.38 [[Mg] @ [Zn] /5.38+0.7和[Zn] +4.7 [Mg] @14，其中[Mg]表示Mg的质量％，[Zn]表示Zn的质量％，并且包含 Cu中的至少一种元素：0.1-0.6质量％，Ag：0.01-0.15质量％，Ti：0.005-0.05质量％，Mn中至少一种元素：0.1-0.3质量％，Cr：0.05-0.2质量％ ％，Zr：0.05〜0.2质量％。

公开(公告)号：US20120234440A1

公开(公告)日：2012-09-20

申请号：US13419798

申请日：2012-03-14

申请人： Yukimasa MIYATA ,  Shinji Yoshihara ,  Minwoo Kang

发明人： Yukimasa MIYATA ,  Shinji Yoshihara ,  Minwoo Kang

IPC分类号： C22F1/053

CPC分类号： C22F1/053 ,  C21D1/673 ,  C22C21/10

摘要： A casted ingot of a heat treatment type Al—Zn—Mg series aluminum alloy comprising Zn: 4.0-8.0% by mass, Mg: 0.5-2.0% by mass, Cu: 0.05-0.5% by mass, Ti: 0.01-0.1% by mass, and any one or more of Mn: 0.1-0.7% by mass, Cr: 0.1-0.5% by mass and Zr: 0.05-0.3% by mass, and the balance being aluminum and incidental impurities is extruded at a homogenization treatment temperature after a homogenization treatment without cooled, and a resulted extruded material is die quenched at a cooling rate equal to or more than 100° C./min and then subjected to an artificial aging treatment, wherein the homogenization treatment is carried out by heating to the homogenization treatment temperature as 430-500° C. at a heating rate less than 750° C./hr or by heating to the homogenization treatment temperature and held the homogenization treatment temperature for 3 hours.

摘要翻译： 含有Zn：4.0〜8.0质量％，Mg：0.5〜2.0质量％，Cu：0.05〜0.5质量％，Ti：0.01-0.1质量％的热处理型Al-Zn-Mg系铝合金铸造锭， ，Mn：0.1-0.7质量％，Cr：0.1-0.5质量％，Zr：0.05〜0.3质量％中的任一种或以上，余量由铝和附带杂质在均化处理中挤出 未冷却均质处理后的温度，所得到的挤出材料以等于或大于100℃/分钟的冷却速度进行猝熄，然后进行人造时效处理，其中均化处理通过加热至 均质处理温度为430-500℃，加热速率小于750℃/小时或通过加热至均化处理温度并保持均化处理温度3小时。

公开(公告)号：US07091109B2

公开(公告)日：2006-08-15

申请号：US10896042

申请日：2004-07-22

申请人： Tetsuo Fujii ,  Hiroshi Muto ,  Shinji Yoshihara ,  Sumitomo Inomata

发明人： Tetsuo Fujii ,  Hiroshi Muto ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC分类号： H01L21/46 ,  H01L21/50

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

公开(公告)号：US5668033A

公开(公告)日：1997-09-16

申请号：US648968

申请日：1996-05-17

申请人： Fumio Ohara ,  Shinji Yoshihara ,  Katuhiko Kanamori ,  Takashi Kurahashi

发明人： Fumio Ohara ,  Shinji Yoshihara ,  Katuhiko Kanamori ,  Takashi Kurahashi

IPC分类号： H01L29/84 ,  B29C43/36 ,  B81C1/00 ,  G01P1/02 ,  G01P15/08 ,  G01P15/12 ,  H01L21/301 ,  H01L21/822 ,  H01L23/053 ,  H01L23/10 ,  H01L27/04 ,  H01L21/304

CPC分类号： B29C43/36 ,  B81C1/00301 ,  B81C1/00865 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/124 ,  H01L23/053 ,  H01L23/10 ,  B29C2043/023 ,  B29C33/0022 ,  B81B2207/093 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10S148/012

摘要： On a silicon wafer there is formed a movable gate MOS transistor (sensing element: functional element). A bonding frame consisting of a silicon thin film is patterned around an element formation region on the surface of the silicon wafer. On a cap forming silicon wafer there is projectively provided a leg portion on the bottom surface of which a bonding layer consisting of a gold film is formed. The cap forming silicon wafer is disposed on the silicon wafer, whereupon heating with respect thereto is performed at a temperature equal to higher than a gold/silicon eutectic temperature to thereby make bondage between the bonding frame of the silicon wafer and the bonding layer of the cap forming silicon wafer. Thereafter, the both wafers are diced in chip units.

摘要翻译： 在硅晶片上形成可移动栅极MOS晶体管（感测元件：功能元件）。 由硅薄膜构成的接合框架围绕硅晶片的表面上的元件形成区域进行图案化。 在形成硅晶片的盖上，在底面上突出设置有腿部，形成由金膜构成的接合层。 盖形成硅晶片设置在硅晶片上，于是相对于其加热在高于金/硅共晶温度的温度下进行，从而使硅晶片的接合框架和接合层之间的粘结 盖形成硅晶片。 此后，两片晶片以芯片单元切割。

公开(公告)号：US06658948B2

公开(公告)日：2003-12-09

申请号：US10053705

申请日：2002-01-24

申请人： Shinji Yoshihara ,  Yasutoshi Suzuki

发明人： Shinji Yoshihara ,  Yasutoshi Suzuki

IPC分类号： G01L122

CPC分类号： G01L9/06 ,  G01L9/0054

摘要： A bridge circuit includes four gage resistors. Each gage resistor is divided into two division gage resistors. A couple of division gage resistors. The junction points between division gage resistors outputting the same potential when no pressure is applied are used for diagnostic. Four gage resistors out of the eight gage resistors are arranged near the center of diaphragm 14, and the other four division resistors are arranged near the peripheral edge portion of the diaphragm 14 to make the stress distribution even.

摘要翻译： 桥接电路包括四个量规电阻。 每个量规电阻分为两个分压计电阻。 一对分压计电阻。 在不施加压力时输出相同电位的分压计电阻之间的接点用于诊断。 八个量具电阻器中的四个量规电阻器布置在隔膜14的中心附近，另外四个除法电阻器布置在隔膜14的周缘部分附近，使应力分布均匀。

公开(公告)号：US06313529B1

公开(公告)日：2001-11-06

申请号：US09131169

申请日：1998-08-07

申请人： Shinji Yoshihara ,  Shigeyuki Akita

发明人： Shinji Yoshihara ,  Shigeyuki Akita

IPC分类号： H01L2334

CPC分类号： H01L24/81 ,  H01L23/10 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/1147 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： On a circuit chip on which a processing circuit for sensor outputs is formed, bump electrodes and a sealing bump, which has a shape of rectangular frame and is arranged to surround the bump electrodes, are formed by Sn—Pb solder. On a sensor chip provided with a sensing portion, electrode pads to be bonded to the bump electrode and a joining pad to be bonded to the sealing bump are formed. When the sensor chip is connected onto the circuit chip, an air-tight space containing the sensing portion is formed by the sealing bump and the joining pad.

摘要翻译： 在其上形成有用于传感器输出的处理电路的电路芯片上，由Sn-Pb焊料形成具有矩形框架形状并且布置成围绕凸起电极的凸块电极和密封凸块。 在设置有感测部的传感器芯片上，形成与凸起电极接合的电极焊盘和与密封凸块接合的接合焊盘。 当传感器芯片连接到电路芯片上时，由密封凸块和接合垫形成包含感测部分的气密空间。

公开(公告)号：US06277756B1

公开(公告)日：2001-08-21

申请号：US09501762

申请日：2000-02-10

申请人： Junji Ohara ,  Shinji Yoshihara ,  Kazuhiko Kano ,  Nobuyuki Ohya

发明人： Junji Ohara ,  Shinji Yoshihara ,  Kazuhiko Kano ,  Nobuyuki Ohya

IPC分类号： H01L21311

CPC分类号： G01P15/0802 ,  B81B2203/033 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/30655 ,  H01L21/762

摘要： A method of manufacturing a semiconductor device, which can effectively form a trench having a high aspect ratio with relatively simple steps. An initial trench is formed in a silicon substrate by a reactive ion etching using an oxide film mask as an etching mask. After forming a protection oxide film on an inside surface of the trench, a part of the protection oxide film at which positions at a bottom surface of the trench is removed by a reactive ion etching, so that an etching of the silicon substrate is advanced through the bottom surface of the trench. Furthermore, the step for forming the protection oxide film and the step for re-etching the bottom surface of the trench are repeatedly performed, so that a depth of the trench becomes a predetermined depth. These steps are performed in a common chamber by using plasma processed with switching gases to be introduced to the chamber.

摘要翻译： 一种制造半导体器件的方法，其可以通过相对简单的步骤有效地形成具有高纵横比的沟槽。 通过使用氧化物膜掩模作为蚀刻掩模的反应离子蚀刻在硅衬底中形成初始沟槽。 在沟槽的内表面上形成保护氧化膜之后，通过反应离子蚀刻去除沟槽底面的位置的保护氧化膜的一部分，使得硅衬底的蚀刻通过 沟槽的底面。 此外，重复执行用于形成保护氧化膜的步骤和重新蚀刻沟槽的底表面的步骤，使得沟槽的深度变为预定深度。 这些步骤通过使用等离子体处理的切换气体被引入腔室在公共室中进行。

公开(公告)号：US06245593B1

公开(公告)日：2001-06-12

申请号：US09444724

申请日：1999-11-24

申请人： Shinji Yoshihara ,  Yasuo Souki ,  Kinya Atsumi ,  Hiroshi Muto

发明人： Shinji Yoshihara ,  Yasuo Souki ,  Kinya Atsumi ,  Hiroshi Muto

IPC分类号： H01L2144

CPC分类号： B81C1/00888 ,  B81C1/00896 ,  C09J7/385 ,  C09J2203/326 ,  C09J2423/006 ,  C09J2433/00 ,  H01L21/6836 ,  H01L2221/68327

摘要： A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.

摘要翻译： 半导体器件具有其表面上具有感测部分的半导体晶片和附接到半导体晶片的粘合片作为保护盖以覆盖感测部分。 粘合片由通常在粘合片的整个表面上设置的平坦粘合片和粘合剂构成。 通过UV照射选择性地降低粘合剂的粘附性以具有粘合减少区域，并且粘合降低区域面对感测部分。 可以以高生产率制造保护盖，并且在半导体晶片被切割并被输送时可靠地保护感测部分。