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公开(公告)号：US07816282B2
公开(公告)日：2010-10-19
申请号：US12019262
申请日：2008-01-24
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/409 , C23C16/45531 , C23C16/45553
摘要： A method is used for forming an SrTiO3 film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2 is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3 film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.
摘要翻译： 一种方法用于在加工室内放置并加热的衬底上形成SrTiO 3膜，同时向处理室中供应气态Ti源材料，气态Sr源材料和气态氧化剂。 Sr（C5（CH3）5）2用作Sr源材料。 该方法进行多个周期以形成SrTiO 3膜。 每个循环依次包括将气态Ti源材料供应到处理室中，从而将其吸附到基底上; 将气态氧化剂供应到处理室中，从而分解由此吸附的Ti源材料，并形成含Ti氧化物膜; 将气态Sr源材料供给到处理室中，从而将其吸附到含Ti氧化物膜上; 并将气态氧化剂供给到处理室中，从而分解由此吸附的Sr源材料，并形成含Sr的氧化物膜。
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公开(公告)号：US20080175994A1
公开(公告)日：2008-07-24
申请号：US12019262
申请日：2008-01-24
IPC分类号： C23C16/00
CPC分类号： C23C16/409 , C23C16/45531 , C23C16/45553
摘要： A method is used for forming an SrTiO3 film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2 is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3 film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.
摘要翻译： 在用于在处理室内放置和加热的衬底上形成SrTiO 3膜的方法，同时将气态Ti源材料，气态Sr源材料和气态氧化剂供应到处理室中 。 作为Sr源材料，使用Sr（C 5 H 3（CH 3）5）2）2。 该方法进行多个循环以形成SrTiO 3膜。 每个循环依次包括将气态Ti源材料供应到处理室中，从而将其吸附到基底上; 将气态氧化剂供应到处理室中，从而分解由此吸附的Ti源材料，并形成含Ti氧化物膜; 将气态Sr源材料供给到处理室中，从而将其吸附到含Ti氧化物膜上; 并将气态氧化剂供给到处理室中，从而分解由此吸附的Sr源材料，并形成含Sr的氧化物膜。
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公开(公告)号：US08361550B2
公开(公告)日：2013-01-29
申请号：US12529356
申请日：2008-02-27
申请人： Akinobu Kakimoto , Yumiko Kawano
发明人： Akinobu Kakimoto , Yumiko Kawano
IPC分类号： C23C16/40
CPC分类号： C23C16/45553 , C23C16/40 , C23C16/404 , C23C16/405 , H01L21/3141 , H01L21/31691
摘要： A substrate is arranged in a processing chamber, the substrate is heated, a Ti material is introduced into the processing chamber in the form of gas, the Ti material is oxidized by introducing an oxidizing agent in the form of gas, a Sr material is introduced into the processing chamber in the form of gas, the Sr material is oxidized by introducing the oxidizing agent in the form of gas, and a SrTiO3 film is formed on the substrate. As the Sr material, a Sr amine compound or a Sr imine compound is used.
摘要翻译： 基板被布置在处理室中，基板被加热，Ti材料以气体的形式被引入处理室中，Ti材料通过引入气体形式的氧化剂而被氧化，引入Sr材料 以气体的形式进入处理室，通过以气体的形式引入氧化剂来氧化Sr材料，并且在衬底上形成SrTiO 3膜。 作为Sr材料，使用Sr胺化合物或Sr亚胺化合物。
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公开(公告)号：US20110036288A1
公开(公告)日：2011-02-17
申请号：US12918165
申请日：2009-02-18
IPC分类号： C30B1/02
CPC分类号： H01L21/02197 , C23C16/40 , C23C16/409 , C23C16/45527 , C23C16/45531 , C23C16/56 , H01G4/1227 , H01G4/33 , H01L21/02178 , H01L21/02186 , H01L21/02192 , H01L21/022 , H01L21/0228 , H01L21/02323 , H01L21/02356 , H01L21/31691 , H01L28/40
摘要： Disclosed is a method for Sr—Ti—O-base film formation. The method comprises placing a substrate with a Ru film formed thereon in a treatment vessel, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a first Sr—Ti—O-base film having a thickness of not more than 10 nm on the Ru film, annealing the first Sr—Ti—O-base film for crystallization, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a second Sr—Ti—O-base film on the first Sr—Ti—O-base film, and annealing the second Sr—Ti—O-base film for crystallization.
摘要翻译： 公开了一种Sr-Ti-O基成膜方法。 该方法包括将其上形成有Ru膜的基板放置在处理容器中，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成第一Sr-Ti-O基膜，其具有 在Ru膜上的厚度不大于10nm，对第一Sr-Ti-O基膜进行结晶退火，将气态Ti材料，气态Sr材料和气态氧化剂引入处理容器中以形成 在第一Sr-Ti-O基膜上形成第二Sr-Ti-O基膜，并对第二Sr-Ti-O基膜进行退火以进行结晶化。
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公开(公告)号：US20100015335A1
公开(公告)日：2010-01-21
申请号：US12529356
申请日：2008-02-27
申请人： Akinobu Kakimoto , Yumiko Kawano
发明人： Akinobu Kakimoto , Yumiko Kawano
IPC分类号： C23C16/40 , C23C16/455
CPC分类号： C23C16/45553 , C23C16/40 , C23C16/404 , C23C16/405 , H01L21/3141 , H01L21/31691
摘要： A substrate is arranged in a processing chamber, the substrate is heated, and an Sr material, a Ti material and an oxidizing agent are introduced into the processing chamber in the form of gas, the gases are reacted on the heated substrate, and an SrTiO3 film is formed on the substrate. As the Sr material, an Sr amine compound or an Sr imine compound is used.
摘要翻译： 将衬底布置在处理室中，加热衬底，将Sr材料，Ti材料和氧化剂以气体形式引入处理室中，气体在加热的衬底上反应，并且将SrTiO 3 在基板上形成膜。 作为Sr材料，使用Sr胺化合物或Sr亚胺化合物。
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公开(公告)号：US08679913B2
公开(公告)日：2014-03-25
申请号：US12676237
申请日：2008-09-02
IPC分类号： H01L21/8242 , H01L21/31 , H01L21/469 , H01L21/02 , H01L21/316
CPC分类号： H01L21/0228 , C23C16/409 , C23C16/45531 , H01L21/02197 , H01L21/31604 , H01L21/31691 , H01L21/67115 , H01L21/68742 , H01L28/55
摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.
摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。
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公开(公告)号：US20110014797A1
公开(公告)日：2011-01-20
申请号：US12676237
申请日：2008-09-02
IPC分类号： H01L21/30
CPC分类号： H01L21/0228 , C23C16/409 , C23C16/45531 , H01L21/02197 , H01L21/31604 , H01L21/31691 , H01L21/67115 , H01L21/68742 , H01L28/55
摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.
摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。
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公开(公告)号：US20110052810A1
公开(公告)日：2011-03-03
申请号：US12918152
申请日：2009-02-18
IPC分类号： C23C16/22
CPC分类号： H01L21/02197 , C23C16/409 , C23C16/45531 , H01G4/1227 , H01L21/0228 , H01L21/31691 , H01L28/55
摘要： An AxByOz-type oxide film can be produced by introducing a first organic metal compound source material, a second organic metal compound source material and an oxidizer into a processing chamber and forming the AxByOz-type oxide film on a substrate. In the production, a compound which has a low vapor pressure and has an organic ligand capable of being decomposed with an oxidizer to produce CO is used as the first organic metal compound source material, a metal alkoxide is used as the second organic metal compound source material, and gaseous O3 or O2 is used as the oxidizer. It is absolutely necessary to introduce the second organic metal compound source material immediately before the introduction of the oxidizer.
摘要翻译： 可以通过将第一有机金属化合物源材料，第二有机金属化合物源材料和氧化剂引入到处理室中并在基板上形成AxByOz型氧化物膜来制造AxByOz型氧化物膜。 在制造中，使用具有低蒸气压并具有能够用氧化剂分解以产生CO的有机配体的化合物作为第一有机金属化合物源材料，使用金属醇盐作为第二有机金属化合物源 材料和气态O 3或O 2用作氧化剂。 在引入氧化剂之前，绝对需要引入第二有机金属化合物源材料。
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公开(公告)号：US08673086B2
公开(公告)日：2014-03-18
申请号：US13056504
申请日：2009-07-27
申请人： Akitake Tamura , Akinobu Kakimoto , Kazuya Dobashi
发明人： Akitake Tamura , Akinobu Kakimoto , Kazuya Dobashi
IPC分类号： B08B7/00
CPC分类号： H01L21/02063 , H01L21/02057 , H01L21/67051
摘要： In a cleaning method, a substrate having a pattern formed on the surface thereof can be cleaned by using a cleaning fluid, while preventing the pattern protrusions from being flattened when the cleaning fluid is removed or dried. The cleaning method includes the steps of: loading a substrate onto a loading platform inside a processing chamber; heating the substrate; and supplying a cleaning fluid onto the surface of the substrate. The substrate is heated in the substrate heating step so that the Leidenfrost phenomenon occurs and steam of the cleaning fluid is interposed between the substrate and droplets of the cleaning fluid supplied to the substrate in the cleaning fluid supply step.
摘要翻译： 在清洁方法中，可以通过使用清洁流体清洁具有形成在其表面上的图案的基板，同时在清洁流体被去除或干燥时防止图案突起变平。 清洁方法包括以下步骤：将基板装载到处理室内的装载平台上; 加热基板; 并将清洗液供给到基板的表面上。 基板在基板加热步骤中被加热，从而在洗涤液供给步骤中，发生莱顿冰霜现象，清洗流体的蒸汽介于基板和供给基板的清洗流体的液滴之间。
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公开(公告)号：US08586448B2
公开(公告)日：2013-11-19
申请号：US13537622
申请日：2012-06-29
IPC分类号： H01L21/76
CPC分类号： C23C16/24 , C23C16/045 , C23C16/45523 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877
摘要： Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.
摘要翻译： 提供一种能够抑制空隙或接缝的产生的用于形成硅膜的方法和装置。 该方法包括进行第一成膜处理，进行蚀刻处理，进行掺杂工序，以及进行第二成膜工序。 在第一成膜工艺中，形成未掺杂有杂质的非掺杂硅膜，从而嵌入物体的凹槽。 在蚀刻工艺中，蚀刻经由第一成膜工艺形成的非掺杂硅膜。 在掺杂工艺中，通过蚀刻工艺蚀刻的非掺杂硅膜掺杂有杂质。 在第二成膜工艺中，形成杂质掺杂硅膜，以便嵌入通过掺杂工艺掺杂的硅膜。
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