公开(公告)号：US5904771A

公开(公告)日：1999-05-18

申请号：US826626

申请日：1997-04-03

申请人： Yuzo Tasaki ,  Mamoru Sato ,  Shuji Yoshizawa ,  Atsushi Onoe ,  Kiyofumi Chikuma ,  Ayako Yoshida

发明人： Yuzo Tasaki ,  Mamoru Sato ,  Shuji Yoshizawa ,  Atsushi Onoe ,  Kiyofumi Chikuma ,  Ayako Yoshida

IPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/448 ,  C30B23/02 ,  C30B25/02 ,  C30B29/30 ,  H01L21/205 ,  H01L21/31 ,  C30B25/12

CPC分类号： C30B23/02 ,  C23C16/4481 ,  C30B23/002 ,  C30B25/02 ,  C30B29/30

摘要： A method of subliming material is provided for use in a CVD film preparation method wherein a CVD precursor is sublimed from its solid state by heating to a temperature not exceeding its melting point, thereby producing a vapor of the precursor, and the vapor of the precursor is transported to a reactor. The method of subliming material comprises the steps of forming the solid-state compound into a film, covering a back surface of the film with a non-reactive support and exposing a front surface of the film to an atmosphere as a sublimation surface. The method maintains the exposed surface area of the solid compound constant during processing.

摘要翻译： 提供了一种升华材料的方法，用于CVD膜制备方法，其中通过加热至不超过其熔点的温度从而将CVD前体从其固态升华，从而产生前体的蒸气和前体的蒸气 被运送到反应堆。 升华材料的方法包括以下步骤：将固态化合物形成膜，用非反应性载体覆盖膜的后表面，并将膜的前表面暴露于作为升华表面的气氛。 该方法在加工过程中保持固体化合物的暴露表面积恒定。

公开(公告)号：US6149975A

公开(公告)日：2000-11-21

申请号：US265703

申请日：1999-03-10

申请人： Yuzo Tasaki ,  Mamoru Satoh ,  Atsushi Onoe ,  Ayako Yoshida ,  Kiyofumi Chikuma

发明人： Yuzo Tasaki ,  Mamoru Satoh ,  Atsushi Onoe ,  Ayako Yoshida ,  Kiyofumi Chikuma

IPC分类号： C30B29/30 ,  C23C16/40 ,  C23C16/448 ,  C30B25/02 ,  C30B25/00

CPC分类号： C23C16/4481 ,  C23C16/409 ,  C30B25/02 ,  C30B29/30

摘要： When a potassium-containing substance is formed in to a film using an organic potassium complex as a potassium source by the CVD method, it is prevented that the film formation rate is changed with the lapse of time, and the potassium content in the film thus formed is changed.As a potassium source for vaporization used for depositing the potassium-containing substance on a substrate by the CVD method, a .beta.-diketone complex of potassium that has been melted by heating to a temperature higher than its melting point and then cooled to be solidified is used.

摘要翻译： 当使用有机钾络合物作为钾源通过CVD法形成含钾物质时，可以防止成膜速度随时间而改变，因此膜中的钾含量因此 形成了改变。 作为用于通过CVD法在基材上沉积含钾物质的钾源，通过加热至高于其熔点然后冷却固化的温度而熔化的钾的β-二酮配合物是 用过的。

公开(公告)号：US6037485A

公开(公告)日：2000-03-14

申请号：US327417

申请日：1999-06-08

申请人： Yuzo Tasaki ,  Mamoru Sato ,  Shuji Yoshizawa

发明人： Yuzo Tasaki ,  Mamoru Sato ,  Shuji Yoshizawa

IPC分类号： C07F3/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/00

CPC分类号： C23C16/409 ,  C07F3/003 ,  C23C16/18 ,  C23C16/40

摘要： A CVD precursor that is a precursor in film preparation by the CVD method, comprising a metalorganic compound containing a metal element constituting the film (called "main compound") having blended therewith another organic compound, the other organic compound having a lower vapor pressure than the main compound at a precursor vaporization temperature and when blended with the main compound forming a fusible blend having a lower melting point than the melting point of the main compound. In particular, when the main compound has the structural formula Ma(DPM).sub.2 (Ma being representing an alkaline earth metal), Ma(TMOD).sub.2 or Ma(TMND).sub.2 is blended therewith.

摘要翻译： 作为通过CVD法制备膜的前体的CVD前体，其包含含有构成该膜的金属元素的金属有机化合物（称为“主要化合物”），其与另一种有机化合物混合，其它有机化合物的蒸气压低于 主要化合物在前体气化温度下，当与主要化合物混合形成熔点低于主要化合物熔点的熔融共混物时。 特别地，当主要化合物具有结构式Ma（DPM）2（Ma代表碱土金属）时，与其混合Ma（TMOD）2或Ma（TMND）2。

公开(公告)号：US5952047A

公开(公告)日：1999-09-14

申请号：US48063

申请日：1998-03-26

申请人： Yuzo Tasaki ,  Mamoru Sato ,  Shuji Yoshizawa

发明人： Yuzo Tasaki ,  Mamoru Sato ,  Shuji Yoshizawa

IPC分类号： C07F3/00 ,  C23C16/18 ,  C23C16/40

CPC分类号： C23C16/409 ,  C07F3/003 ,  C23C16/18 ,  C23C16/40

摘要： A CVD precursor that is a precursor in film preparation by the CVD method, comprising a metalorganic compound containing a metal element constituting the film (called "main compound") having blended therewith another organic compound, the other organic compound having a lower vapor pressure than the main compound at a precursor vaporization temperature and when blended with the main compound forming a fusible blend having a lower melting point than the melting point of the main compound. In particular, when the main compound has the structural formula Ma(DPM).sub.2 (Ma being representing an alkaline earth metal), Ma(TMOD).sub.2 or Ma(TMND).sub.2 is blended therewith.

公开(公告)号：US20080159939A1

公开(公告)日：2008-07-03

申请号：US11987971

申请日：2007-12-06

申请人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： B32B18/00

CPC分类号： C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

公开(公告)号：US20060120940A1

公开(公告)日：2006-06-08

申请号：US11314996

申请日：2005-12-23

申请人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： B32B9/00 ,  B32B19/00

CPC分类号： C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

公开(公告)号：US07960901B2

公开(公告)日：2011-06-14

申请号：US12662619

申请日：2010-04-26

申请人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： H01L41/187

CPC分类号： C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

摘要翻译： 一种制造陶瓷的方法包括：形成包含具有氧八面体结构的复合氧化物材料和对复合氧化物材料具有催化作用的顺电性材料的混合状态的膜，并对膜进行热处理，其中， 顺电材料是构成元素中包含Si的层状催化物质和构成元素中包含Si和Ge的层状催化物质之一。 热处理包括烧结和后退火。 至少在包括氧和臭氧中的至少一种的加压气氛中进行后退火。 陶瓷是具有氧八面体结构的复合氧化物，并且具有氧八面体结构中的Si和Ge。

公开(公告)号：US20100207492A1

公开(公告)日：2010-08-19

申请号：US12662617

申请日：2010-04-26

申请人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： H01L41/187

CPC分类号： C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

摘要翻译： 一种制造陶瓷的方法包括：形成包含具有氧八面体结构的复合氧化物材料和对复合氧化物材料具有催化作用的顺电性材料的混合状态的膜，并对膜进行热处理，其中， 顺电材料是构成元素中包含Si的层状催化物质和构成元素中包含Si和Ge的层状催化物质之一。 热处理包括烧结和后退火。 至少在包括氧和臭氧中的至少一种的加压气氛中进行后退火。 陶瓷是具有氧八面体结构的复合氧化物，并且具有氧八面体结构中的Si和Ge。

公开(公告)号：US07138013B2

公开(公告)日：2006-11-21

申请号：US10464548

申请日：2003-06-19

申请人： Eiji Natori ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： C30B25/12

CPC分类号： C04B35/475 ,  C04B35/491 ,  C04B35/624 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.

摘要翻译： 陶瓷膜的制造方法包括通过使原料体20结晶而形成陶瓷膜30的工序。 原料主体20包含混合状态的不同种类的原料。 不同类型的原料在原料结晶中的晶体生长条件和晶体生长机理中的至少一种彼此不同。 根据该制造方法，能够提高陶瓷膜的表面形态。

公开(公告)号：US07825569B2

公开(公告)日：2010-11-02

申请号：US12385539

申请日：2009-04-10

申请人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

发明人： Eiji Natori ,  Takeshi Kijima ,  Koichi Furuyama ,  Yuzo Tasaki

IPC分类号： H01L41/187

CPC分类号： C04B35/457 ,  C04B35/01 ,  C04B35/16 ,  C04B35/42 ,  C04B35/4521 ,  C04B35/465 ,  C04B35/472 ,  C04B35/475 ,  C04B35/491 ,  C04B35/493 ,  C04B35/495 ,  C04B35/497 ,  C04B35/624 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3287 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/3436 ,  C04B2235/3445 ,  C04B2235/3454 ,  C04B2235/3463 ,  C04B2235/664 ,  C04B2235/76 ,  C04B2235/80 ,  C23C14/08 ,  C23C16/40 ,  C23C16/409 ,  C23C18/1208 ,  C23C18/1225 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L41/1878 ,  H01L41/318

摘要： A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.