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    Combinatorial flow system and method
    1.
    发明授权
    Combinatorial flow system and method 有权
    组合流系统和方法

    公开(公告)号：US08969257B1

    公开(公告)日：2015-03-03

    申请号：US12074882

    申请日：2008-03-06

    Applicant: Zachary Fresco ,  Rich Endo

    Inventor： Zachary Fresco ,  Rich Endo

    IPC: C40B50/14

    CPC classification number: B01J19/0053 ,  B01J2219/00353 ,  B01J2219/00418 ,  B01J2219/00495 ,  H01L21/67023 ,  H01L21/67051 ,  H01L21/6708

    Abstract: A reactor assembly having a plurality of reaction chambers defined therein is provided. The reactor assembly includes a fluid flow module that provides a pressurized control flow of fluid from an open container. In another embodiment, the reactor block includes a plurality of passageways defined over a surface of a substrate to accommodate the combinatorial processing in order to obtain multiple data points from a single substrate.

    Abstract translation: 提供了一种其中限定有多个反应室的反应器组件。 反应器组件包括流体流动模块，其提供来自开放容器的流体的加压控制流。 在另一个实施例中，反应器块包括限定在衬底的表面上的多个通道，以适应组合处理，以便从单个衬底获得多个数据点。

    Stamp usage to enhance surface layer functionalization and selectivity
    5.
    发明授权
    Stamp usage to enhance surface layer functionalization and selectivity 有权
    印章使用，以增强表面层的功能化和选择性

    公开(公告)号：US08580344B2

    公开(公告)日：2013-11-12

    申请号：US12405218

    申请日：2009-03-16

    Applicant: Nikhil D. Kalyankar ,  Zachary Fresco ,  Chi-I Lang

    Inventor： Nikhil D. Kalyankar ,  Zachary Fresco ,  Chi-I Lang

    IPC: G01N31/00 ,  G01N31/20 ,  G01N31/22 ,  B01L3/00

    CPC classification number: C40B60/08 ,  B01J19/0046 ,  B01J2219/00317 ,  B01J2219/00364 ,  B01J2219/00376 ,  B01J2219/00382 ,  B01J2219/00427 ,  B01J2219/00527 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00659 ,  B01J2219/00702 ,  C40B50/18

    Abstract: This disclosure provides methods, devices and systems for using a stamp to enhance selectivity between surface layers of a substrate, and to facilitate functionalizing selected layers. An array of flat stamps may be used to concurrently stamp multiple regions of a substrate to transfer one or more substances to the topmost layer or layers of the substrate. If desired, the affected regions of the substrate may be isolated from each other through the use of a reactor plate that, when clamped to the substrate's surface, forms reaction wells in the area of stamping. The stamp area can, if desired, be configured for stamping the substrate after the reactor plate has been fitted, with the individual stamps sized and arranged in a manner that permits stamping within each reaction well. If applied in a combinatorial process, a robotic process may be used to transfer multiple combinations of contact substances and processing chemicals to each reaction well to perform many concurrent processes upon a single substrate (e.g., a single coupon). The methods, devices and systems provided facilitate semiconductor design, optimization and qualification, and may be adapted to production manufacturing.

    Abstract translation: 本公开提供了使用印模来增强基底的表面层之间的选择性并促进官能化所选择的层的方法，装置和系统。 可以使用平面阵列阵列来同时印刷衬底的多个区域以将一种或多种物质转移到衬底的最上层或多层。 如果需要，可以通过使用反应器板将基材的受影响区域彼此隔离，当将其夹在基材表面上时，在冲压区域中形成反应孔。 如果需要，邮票区域可以被配置用于在安装反应器板之后冲压衬底，各个邮票的大小和布置方式允许在每个反应井内冲压。 如果应用于组合过程中，机器人过程可用于将接触物质和加工化学品的多种组合转移到每个反应井，以在单个底物（例如，单一试样）上进行许多并行处理。 提供的方法，设备和系统有助于半导体设计，优化和鉴定，并可适用于生产制造。

    Combinatorial processing including stirring
    6.
    发明授权
    Combinatorial processing including stirring 有权
    组合加工包括搅拌

    公开(公告)号：US07960313B2

    公开(公告)日：2011-06-14

    申请号：US11763180

    申请日：2007-06-14

    Applicant: Zachary Fresco ,  Nitin Kumar

    Inventor： Zachary Fresco ,  Nitin Kumar

    IPC: C40B60/14 ,  C40B60/00 ,  B01L3/00 ,  B01L99/00

    CPC classification number: B01J19/0046 ,  B01J2219/00333 ,  B01J2219/00364 ,  B01J2219/00389 ,  B01J2219/00481 ,  B01J2219/00527 ,  B01J2219/00596 ,  B01J2219/00756

    Abstract: Combinatorial processing including stirring is described, including defining multiple regions of a substrate, processing the multiple regions of the substrate in a combinatorial manner, introducing a fluid into a first aperture at a first end of a body to dispense the fluid out of a second aperture at a second end of the body and into one of the multiple regions, and agitating the fluid using an impeller at a second end of the body to facilitate interaction of the fluid with a surface of the substrate.

    Abstract translation: 描述了包括搅拌在内的组合处理，包括限定衬底的多个区域，以组合的方式处理衬底的多个区域，将流体引入到身体的第一端的第一孔中，以将流体从第二孔 在所述主体的第二端并且进入所述多个区域之一，并且在所述主体的第二端处使用叶轮来搅动所述流体，以促进所述流体与所述基板的表面的相互作用。

    Methods For Improving Selectivity of Electroless Deposition Processes
    7.
    发明申请
    Methods For Improving Selectivity of Electroless Deposition Processes 有权
    提高无电沉积工艺选择性的方法

    公开(公告)号：US20090291275A1

    公开(公告)日：2009-11-26

    申请号：US12471310

    申请日：2009-05-22

    Applicant: Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

    Inventor： Jinhong Tong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Nitin Kumar ,  Bob Kong ,  Zachary Fresco

    IPC: B32B3/00 ,  B05D5/12 ,  B05D3/04

    CPC classification number: H01L21/288 ,  C23C18/1605 ,  C23C18/168 ,  C23C18/50 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/76829 ,  H01L21/76849

    Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.

    Abstract translation: 提出了用于改善在图案化衬底上的覆盖层的选择性沉积的方法，所述方法包括：接收图案化衬底，所述图案化衬底包括导电区域和电介质区域; 在介电区上形成分子屏蔽层（MML）; 制备无电镀（ELESS）电镀浴，其中ELESS电镀浴包括：钴（Co）离子源：络合剂：缓冲剂：钨（W）离子源和还原剂; 并在ELESS温度和ELESS pH下使图案化衬底与ELESS电镀浴反应ELESS周期，从而在导电区域上选择性地形成覆盖层。 在一些实施方案中，方法还包括用于将ELESS pH调节至约9.0 pH至9.2 pH范围的pH调节剂。 在一些实施方案中，pH调节剂是氢氧化四甲基铵（TMAH）。 在一些实施方案中，MML是亲水的。

    Methods for removing residual particles from a substrate
    8.
    发明授权
    Methods for removing residual particles from a substrate 有权
    从基材中除去残留颗粒的方法

    公开(公告)号：US08551252B2

    公开(公告)日：2013-10-08

    申请号：US12062439

    申请日：2008-04-03

    Applicant: Zachary Fresco

    Inventor： Zachary Fresco

    IPC: B08B7/00 ,  B08B3/00

    CPC classification number: C11D3/162 ,  C11D11/0047 ,  H01L21/02074

    Abstract: Methods for removing residual particles from a substrate are presented including: receiving the substrate including the residual particles; and functionalizing the residual particles with functionalizing molecules, wherein the functionalizing molecules selectively attach with a surface the residual particles, where the functionalizing molecules impart a changed chemical characteristic to the residual particles, and where the changed chemical characteristic facilitates removal of the residual particles from the substrate. In some embodiments, methods further include: before functionalizing, cleaning the substrate, where the cleaning leaves residual particles adhered with a surface of the substrate, and where the residual particles are hydrophilic; and if the surface of the substrate is hydrophobic, performing the functionalizing. In some embodiments, methods further include removing the residual particles from the surface of the substrate where removing the residual particles includes removing the functionalizing molecules.

    Abstract translation: 提出了从基材中除去残余颗粒的方法，包括：接收包括残余颗粒的基材; 并且用官能化分子官能化残余颗粒，其中官能化分子选择性地附着表面残留的颗粒，其中官能化分子赋予残留颗粒改变的化学特性，并且其中改变的化学特性有助于从 基质。 在一些实施方案中，方法还包括：在官能化，清洁基底之前，其中清洁使剩余颗粒与基材的表面粘附，并且其中残余颗粒是亲水的; 并且如果基材的表面是疏水性的，则进行官能化。 在一些实施方案中，方法还包括从基材的表面去除残余颗粒，其中除去残余颗粒包括除去官能化分子。

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