公开(公告)号：US20250043435A1

公开(公告)日：2025-02-06

申请号：US18570742

申请日：2022-06-15

Applicant: Atotech Deutschland GmbH & Co. KG

Inventor： Jens HEYDECKE ,  Sebastian KÜHNE ,  Carl Christian FELS ,  Johannes STROBEL ,  Britta SCHELLER

IPC: C25B1/21 ,  C25B11/03 ,  C25B11/056 ,  C25B11/081

Abstract: The present invention relates to a method for oxidizing manganese species in a treatment device, the method including the steps (A) providing in the treatment device a manganese species having a first oxidation number, (B) providing in the treatment device one or more than one anode and at least one cathode, (C) applying a current to said anode and said cathode such that at least a portion of the manganese species having the first oxidation number is anodically oxidized to a manganese species having a second oxidation number which is higher than the first oxidation number, characterized in that at least one of said one or more than one anode has a surface density of 6 m2/L or more, based on the total volume of said at least one anode.

公开(公告)号：US12173422B2

公开(公告)日：2024-12-24

申请号：US18258048

申请日：2021-12-17

Applicant: Atotech Deutschland Gmbh & Co. KG

Inventor： Simon Pape ,  Oleksandra Yevtushenko ,  Anke Walter ,  Thorsten Ross

IPC: C25D3/08 ,  C25D3/10 ,  C25D5/00

Abstract: The present invention refers to an electroplating composition for plating a chromium coating on a substrate, the composition comprising: (i) a source of hexavalent chromium; (ii) one or more than one betaine comprising a quaternary nitrogen and/or salts thereof; and (iii) one or more than one poly-organosiloxane.

公开(公告)号：US20240341042A1

公开(公告)日：2024-10-10

申请号：US18746837

申请日：2024-06-18

Applicant: Atotech Deutschland GmbH & Co. KG

Inventor： Bert REENTS ,  Akif ÖZKÖK ,  Soungsoo KIM ,  Horst BRÜGGMANN ,  Herwig Josef BERTHOLD ,  Marcin KLOBUS ,  Thomas SCHIWON ,  Marko MIRKOVIC

IPC: H05K3/42 ,  C25D3/38 ,  C25D5/02 ,  C25D5/18 ,  C25D5/34 ,  C25D5/48 ,  C25D7/00 ,  H01L21/48 ,  H01L21/768 ,  H05K3/10 ,  H05K3/18 ,  H05K3/46

CPC classification number: H05K3/425 ,  C25D3/38 ,  C25D5/022 ,  C25D5/18 ,  C25D5/34 ,  C25D5/48 ,  C25D7/00 ,  H01L21/4857 ,  H01L21/76877 ,  H05K3/108 ,  H05K3/423 ,  H05K3/429 ,  H05K3/4623 ,  H05K3/181 ,  H05K2203/0353 ,  H05K2203/072 ,  H05K2203/0723 ,  H05K2203/1492

Abstract: The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) or IC substrates including through-holes and/or grate structures filled with copper, which comprises the steps of:



a) providing a multi-layer substrate;
b) forming a non-copper conductive layer or a copper layer on the cover layer and on an inner surface of the through-hole, respectively on an inner surface of the grate structure;
c) forming a patterned masking film;
d) electrodepositing copper;
e) removing the masking film; and
f) electrodepositing a copper filling.

公开(公告)号：US20240271305A1

公开(公告)日：2024-08-15

申请号：US18568352

申请日：2022-06-08

Applicant: Atotech Deutschland GmbH & Co. KG

Inventor： Berkem ÖZKAYA ,  Peter KÜHLKAMP ,  Oleksandra YEVTUSHENKO ,  Michael JONAT ,  Philipp WACHTER

IPC: C25D3/06 ,  C25D3/08 ,  C25D5/00

CPC classification number: C25D3/06 ,  C25D3/08 ,  C25D5/627

Abstract: The present invention relates to a method for electrodepositing a dark chromium layer on a substrate, a respective electroplating bath for depositing such a dark chromium layer, and a respective substrate comprising said dark chromium layer. The electroplating bath comprises colloidal particles containing the chemical element aluminum. The substrate comprising said dark chromium layer is primarily suited for decorative purposes.

公开(公告)号：US12063751B2

公开(公告)日：2024-08-13

申请号：US17636500

申请日：2020-08-19

Applicant: Atotech Deutschland GmbH & Co. KG

Inventor： Akif Özkök ,  Bert Reents ,  Mustafa Özkök ,  Marko Mirkovic ,  Markus Youkhanis ,  Horst Brüggmann ,  Sven Lamprecht ,  Kai-Jens Matejat

IPC: H05K3/42 ,  C25D3/38 ,  C25D5/02 ,  C25D5/18 ,  C25D7/00 ,  H01L21/48 ,  H05K3/10

CPC classification number: H05K3/425 ,  C25D3/38 ,  C25D5/022 ,  C25D5/18 ,  C25D7/00 ,  H01L21/4857 ,  H01L21/486 ,  H05K3/423 ,  H05K3/429 ,  H05K3/108 ,  H05K2203/072 ,  H05K2203/0723 ,  H05K2203/1492

Abstract: The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) including microvias filled with copper comprising the steps of:



a1) providing a multi-layer substrate comprising

(i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers,
(ii) a cover layer, and
(iii) a microvia extending from the peripheral surface and ending on the conductive interlayer;


b1) depositing a conductive layer; or
a2) providing a multi-layer substrate comprising

(i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers,
(ii) a microvia extending from the peripheral surface and ending on the conductive interlayer;


b2) depositing a conductive layer;
and
c) electrodepositing a copper filling in the microvia and a first copper layer on the conductive layer which form together a planar surface and the thickness of the first copper layer is from 0.1 to 3 μm.

公开(公告)号：US12054843B2

公开(公告)日：2024-08-06

申请号：US17920509

申请日：2021-04-22

Applicant: Atotech Deutschland Gmbh & Co. KG

Inventor： Ralf Schmidt ,  Josef Gaida ,  Willi Rohland ,  Jens Palm ,  Himendra Jha

IPC: C25D5/16 ,  C07D233/60 ,  C07D249/04 ,  C07D251/54 ,  C25D3/38 ,  C25D5/00 ,  C25D5/12 ,  C25D5/50

CPC classification number: C25D3/38 ,  C07D233/60 ,  C07D249/04 ,  C07D251/54

Abstract: The invention relates to an acidic aqueous composition for electrolytic copper plating, the composition comprising

(i) copper (II) ions,
(ii) one or more than one suppressor consisting of or comprising

one single N-heteroaromatic mono-ring, said mono-ring comprising at least two ring nitrogen atoms and more than one substituent covalently connected to one of said ring nitrogen atoms and/or a ring carbon atom, wherein said substituent independently is or comprises
one or more than one linear or branched polyalkylene glycol moiety, and/or
one or more than one linear or branched polyalkylene glycol block polyalkylene glycol, or random polyalkylene glycol moiety,
with the proviso that
if said suppressor comprises a OH group, then it is a terminal OH group of said polyalkylene glycol moiety, polyalkylene glycol block polyalkylene glycol, and random polyalkylene glycol moiety, respectively, and
said suppressor does not comprise NH2 groups, halogen atoms, and sulfur atoms;

a method of electrolytic copper plating using the acidic aqueous composition; and specific suppressors as defined above.

公开(公告)号：US20240209512A1

公开(公告)日：2024-06-27

申请号：US18553028

申请日：2022-03-31

Applicant: Atotech Deutschland GmbH & Co. KG

Inventor： Frank BRÜNING ,  Sebastian DÜNNEBEIL ,  Jörg SCHULZE ,  Edith STEINHÄUSER ,  Sebastian ZARWELL

IPC: C23C18/20 ,  C23C18/16 ,  C23C18/22 ,  C23C18/38 ,  C23C28/02 ,  C25D3/38

CPC classification number: C23C18/2026 ,  C23C18/1641 ,  C23C18/1653 ,  C23C18/1692 ,  C23C18/22 ,  C23C18/38 ,  C23C28/023 ,  C25D3/38

Abstract: The present invention relates to a method for plasma-treating a surface of a substrate, in particular a dielectric substrate, the method including the following steps:



(t) wet-chemical treating the surface of the substrate with treatment solutions of a desmear process, to obtain a wet-chemical treated surface of the substrate,
(i) treating a surface of the substrate with a plasma beam under atmospheric pressure, to obtain a plasma-treated surface of the substrate,
(ii) activation of the plasma-treated surface of the substrate with an activation composition, to obtain an activated surface of the substrate,
(iii) optionally electroless deposition of a coating metal on the activated surface of the substrate, to obtain a plating surface of the substrate, and
(iv) optionally electrolytic deposition of an additional coating metal on the plating surface of the substrate obtained after optional step (iii) or on the activated surface of the substrate obtained after step (ii).

公开(公告)号：US12006585B2

公开(公告)日：2024-06-11

申请号：US17312968

申请日：2019-12-11

Applicant: Atotech Deutschland GmbH

Inventor： Michael Muigg ,  Anke Walter ,  Matthias Rost ,  Sebastian Kühne

IPC: C25D3/06 ,  C25D17/00 ,  C25D21/14 ,  C25D21/18

CPC classification number: C25D3/06 ,  C25D17/00 ,  C25D21/14 ,  C25D21/18

Abstract: A method for depositing a chromium or chromium alloy layer on at least one substrate, the method comprising the steps



(a) providing an aqueous deposition bath with a pH in the range from 4.1 to 6.9, the bath comprising

trivalent chromium ions,
formate ions, and
optionally sulfate ions,


(b) providing the at least one substrate and at least one anode,
(c) immersing the at least one substrate in the aqueous deposition bath and applying an electrical current such that the chromium or chromium alloy layer is deposited on the substrate, the substrate being the cathode,
wherein, if during or after step (c) the trivalent chromium ions have a concentration below a target concentration of trivalent chromium ions, then
(d) adding dissolved trivalent chromium formate to the aqueous deposition bath such that trivalent chromium ions are present in a higher concentration than before step (d),
with the proviso that
solid trivalent chromium formate is dissolved in a separated partial volume taken from the aqueous deposition bath to obtain said dissolved trivalent chromium formate for step (d).

公开(公告)号：US11963308B2

公开(公告)日：2024-04-16

申请号：US17052545

申请日：2019-05-06

Applicant: Atotech Deutschland GmbH

Inventor： Norbert Lützow ,  Wonjin Cho ,  Toshio Honda ,  Dirk Tews ,  Markku Lager ,  Felix Tang ,  Mirko Kloppisch ,  Aaron Hahn ,  Gabriela Schmidt ,  Martin Thoms

IPC: H05K3/38 ,  C23C22/52 ,  C23G1/10

CPC classification number: H05K3/385 ,  C23C22/52 ,  C23G1/103 ,  H05K2203/124

Abstract: The present invention relates to a method for increasing adhesion strength between a surface of copper or copper alloy and an organic layer, the method comprising in this order the steps:



(i) providing a non-conductive substrate comprising on at least one side said surface, said surface having a total surface area of copper or copper alloy,
(ii) contacting said substrate comprising said surface with an acidic aqueous non-etching protector solution comprising

(ii-a) one or more than one amino azole,
(ii-b) one or more than one organic acid and/or salts thereof,
(ii-c) one or more than one peroxide in a total amount of 0.4 wt-% or less, based on the total weight of the protector solution, and
(ii-d) inorganic acids in a total amount of 0 to 0.01 wt-%, based on the total weight of the protector solution,


wherein during step (ii) the total surface area of said surface is not increased upon contacting with the protector solution.

公开(公告)号：US11946152B2

公开(公告)日：2024-04-02

申请号：US17778104

申请日：2020-12-18

Applicant: Atotech Deutschland Gmbh & Co. KG

Inventor： Steven Leonhard ,  Thomas Freese

IPC: C25D21/08 ,  C25D3/22 ,  C25D5/34 ,  C25D21/16 ,  C25D21/18 ,  C25D21/20

CPC classification number: C25D3/22 ,  C25D5/34

Abstract: A method for depositing a zinc-nickel alloy on a substrate, including:



(a) providing the substrate,
(b) providing an aqueous zinc-nickel deposition bath as catholyte in a compartment, wherein the compartment includes an anode and anolyte, the anolyte being separated from catholyte by a membrane, and the catholyte includes nickel ions, complexing agent, zinc ions,
(c) depositing zinc-nickel alloy onto the substrate, wherein after step (c) nickel ions have lower concentration than before step (c),
(d) rinsing the zinc-nickel coated substrate in water, obtaining a rinsed zinc-nickel coated substrate and rinse water including a portion of the complexing agent and nickel ions,
wherein (i) a portion of rinse water and/or a portion of catholyte is treated in a first treatment compartment to separate water from the complexing agent and the nickel ions,
(ii) returning the separated complexing agent to the catholyte, and
(iii) adding nickel ion to the catholyte.