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公开(公告)号：US20210296115A1
公开(公告)日：2021-09-23
申请号：US17258449
申请日：2018-12-18
发明人： Daping YAO , Liqiang CAO
IPC分类号： H01L21/02 , B08B3/10 , B08B3/08 , H01L21/768 , B05B7/16
摘要： A method for cleaning a through via including the following steps is provided: heating a cleaning fluid to a predetermined temperature; mixing the cleaning liquid with an inert gas and entering into a cleaning cavity; atomizing the cleaning liquid in an atomizer to spray on a wafer surface and to wet an inner wall and a bottom of the through via; and closing a cleaning liquid valve.
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公开(公告)号：US09076699B2
公开(公告)日：2015-07-07
申请号：US14071459
申请日：2013-11-04
发明人： Wenqi Zhang , Haiyang Gu , Chongshen Song
IPC分类号： H01L21/768 , H01L23/00 , H01L21/321 , H01L21/306
CPC分类号： H01L24/13 , H01L21/30625 , H01L21/3212 , H01L21/76898 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/05009 , H01L2224/05558 , H01L2224/0557 , H01L2224/05666 , H01L2224/05676 , H01L2224/05681 , H01L2224/05686 , H01L2224/1134 , H01L2224/11462 , H01L2224/13005 , H01L2224/13018 , H01L2224/13082 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2924/12042 , H01L2924/00014 , H01L2924/2064 , H01L2924/013 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/00
摘要： A TSV exposing process is provided, including: performing a mechanical grinding process on the substrate back surface of a substrate with a TSV conductive column, a liner between the substrate and the TSV conductive column; performing a first and a second chemical mechanical polishing process on the grinded substrate back surface; then performing an etching on the substrate back surface, and making the TSV backside reveal more than 10 μm.
摘要翻译： 提供了一种TSV曝光工艺，其包括：利用TSV导电柱，衬底和TSV导电柱之间的衬垫在衬底的衬底背面上进行机械研磨过程; 在研磨的基板背面上进行第一和第二化学机械抛光工艺; 然后对基板背面进行蚀刻，使TSV背面显示超过10μm。
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公开(公告)号：US20150099423A1
公开(公告)日：2015-04-09
申请号：US14253484
申请日：2014-04-15
发明人： Feng JIANG , Haiyang GU , Hongwen HE
IPC分类号： B24B37/013 , B24B49/12
CPC分类号： B24B37/013 , B24B49/12
摘要： A TSV wafer thinning controlling method and system is provided, which can improve the accuracy of the wafer thinning technique. The system includes a chuck table used for carrying a wafer and a grinding device used for thinning the wafer; and further includes: an infrared sensor equipped on the chuck table or grinding device, and a measurement feedback system connected with the infrared sensor and the grinding device; wherein, the infrared sensor comprises an infrared emitting and receiving circuit, signal amplifying and filtering circuit and a data processor.
摘要翻译： 提供了TSV晶片薄化控制方法和系统，可以提高晶片薄化技术的精度。 该系统包括用于承载晶片的卡盘台和用于使晶片变薄的研磨装置; 并且还包括：配备在卡盘台或研磨装置上的红外传感器，以及与红外传感器和研磨装置连接的测量反馈系统; 其中，所述红外线传感器包括红外发射和接收电路，信号放大和滤波电路以及数据处理器。
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公开(公告)号：US20230091513A1
公开(公告)日：2023-03-23
申请号：US17908118
申请日：2021-03-05
发明人： Liqiang CAO , Yangyang YAN , Peng SUN , Tianfang CHEN , Fengwei DAI
IPC分类号： H01L23/64 , H01L23/00 , H01L25/065 , H01L23/48 , H01L21/768 , H01L21/56 , H01L23/31
摘要： A wafer-level chip structure, a multiple-chip stacked and interconnected structure and a fabricating method thereof, wherein the wafer-level chip structure includes: a through-silicon via, which penetrates a wafer; a first surface including an active region, a multi-layered redistribution layer and a bump; and a second surface including an insulation dielectric layer, and a frustum transition structure connected with the through-silicon via. In an embodiment of the present application, a frustum type impedance transition structure is introduced into a position between a TSV exposed area on a backside of a wafer and a UBM so as to implement an impedance matching between TSV and UBM, thereby alleviating the problem of signal distortion that is caused by an abrupt change of impedance.
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公开(公告)号：US20220115356A1
公开(公告)日：2022-04-14
申请号：US17416273
申请日：2019-10-08
发明人： Peng SUN , Yulong REN , Liqiang CAO
IPC分类号： H01L25/065 , H01L23/00 , H01L23/31 , H01L23/538 , H01L21/683 , H01L21/48 , H01L21/56 , H01L25/00
摘要： The present application discloses a fan-out packaging structure and a packaging method for a chip. The structure includes first and second chips with oppositely fitted bottoms; metal terminals distributed around the first chip, one side of the metal terminals being on a same plane with the front of the first chip; a lead connected between the front of the second chip and the other side of the metal terminal; a packaging layer for packaging the first chip, the second chip, the lead the metal terminals; and a lead-out layer disposed on a first surface of the packaging layer and electrically connected to one side of the metal terminals and/or the front of the first chip.
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公开(公告)号：US11067459B1
公开(公告)日：2021-07-20
申请号：US16304730
申请日：2017-11-24
发明人： Wen Yin , Heng Yang , Chuanguo Dou , Wenqi Zhang , Tingyu Lin , Liqiang Cao
IPC分类号： G01L1/00 , G01L1/18 , H01L41/113 , H01L41/047
摘要： The present invention discloses a stress sensor structure and a manufacturing method thereof, wherein the stress sensor structure comprises: a substrate; a blind-hole, provided on a first surface of the substrate; a first piezoresistive layer and a second piezoresistive layer, formed by material with piezoresistive effect, provided on a lateral wall of the blind-hole and interconnected at bottom portions of the layers; a second insulating layer, provided between the first piezoresistive layer and the second piezoresistive layer; a first electrode, provided on the first surface of the substrate and connected to the first piezoresistive layer; a second electrode, provided on the first surface of the substrate and connected to the second piezoresistive layer. The resistance measured by applying an external voltage between the first electrode and the second electrode can be used to indicator a stress of the TSV structure, in particular an axial stress thereof, so that the stress sensor can be used to measure a stress of the TSV structure.
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公开(公告)号：US10209467B2
公开(公告)日：2019-02-19
申请号：US15854585
申请日：2017-12-26
发明人： Haiyun Xue
IPC分类号： G02B6/42 , H01L21/027 , H01L31/108
摘要： An active optical adapter plate comprises a main body, the main body comprises at least a through hole and at least a photoelectric detection area, the through hole is disposed on an end face of the main body and configured to insert an optical fiber to provide an optical path for an emission light of a laser; the photoelectric detection area is disposed on the end face of the main body having the through hole, and comprises a photoelectric detector used for detecting a reflected light of the emission light of the laser and converting the detected reflected light into an electrical signal.
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公开(公告)号：US09653378B2
公开(公告)日：2017-05-16
申请号：US14703476
申请日：2015-05-04
发明人： Fengze Hou , Tingyu Lin
IPC分类号： H01L23/473 , H05K7/20
CPC分类号： H01L23/473 , H01L23/4735 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2924/15311 , H01L2924/181 , H05K7/20345 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A solution for dissipating heat generated from high power chip packages, e.g., a fcBGA package, wbBGA package, 2.5D/3D TSV package, PoP, etc. The heat dissipation system may include a high power chip package including a high power chip. A micro-jet may be attached to the high power chip. A micro-pump may be in fluidic communication with the micro-jet. A heat exchanger may be in fluidic communication with the micro-pump. The high power chip package is assembled on the same PCB with the micro-pump and the heat exchanger.
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公开(公告)号：US09368376B2
公开(公告)日：2016-06-14
申请号：US14253589
申请日：2014-04-15
发明人： Daquan Yu , Feng Jiang
IPC分类号： H01L21/463 , H01L21/68 , H01L21/67 , H01L21/683
CPC分类号： H01L21/67092 , H01L21/681 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/68381 , H01L2221/6839 , Y10T83/207 , Y10T83/2092
摘要： A mechanical debonding method and system are provided. A mechanical debonding method, used to debond temporary bonding wafers formed by bonding a device wafer and a carrier wafer by an adhesive, includes: obtaining the height position of the adhesive through a thickness measurement apparatus; moving a cutting apparatus to a position between the device wafer and the carrier wafer based on the height position of the adhesive, then removing the adhesive at the edge of the temporary bonding wafers by the cutting apparatus; removing the carrier wafer from the temporary bonding wafers; cleaning the adhesive left on the surface of the device wafer.
摘要翻译： 提供了一种机械剥离方法和系统。 用于通过粘合剂将装置晶片和载体晶片接合而形成的临时接合晶片的机械剥离方法包括：通过厚度测量装置获得粘合剂的高度位置; 基于粘合剂的高度位置将切割装置移动到装置晶片和载体晶片之间的位置，然后通过切割装置在临时接合晶片的边缘处去除粘合剂; 从临时接合晶片去除载体晶片; 清洁留在设备晶片表面上的粘合剂。
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10.发明授权Method for removing electroplated metal facets and reusing a barrier layer without chemical mechanical polishing 有权不用化学机械抛光去除电镀金属面并重复使用阻挡层的方法公开(公告)号：US09293368B2
公开(公告)日：2016-03-22
申请号：US14483894
申请日：2014-09-11
IPC分类号： H01L21/768 , H01L23/00 , H01L21/321
CPC分类号： H01L21/76898 , H01L21/32115 , H01L21/32125 , H01L21/7684 , H01L21/76841 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02372 , H01L2224/02377 , H01L2224/03462 , H01L2224/0391 , H01L2224/03914 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/05647 , H01L2224/1134 , H01L2224/13022 , H01L2224/13024 , H01L2924/00014 , H01L2924/12042 , H01L2924/00 , H01L2224/13099
摘要： A method for avoiding using CMP for eliminating electroplated copper facets and reusing barrier layer in the back end of line (“BEOL”) manufacturing processes. Electropolishing is employed to remove the deposited surface metal, stopping at the barrier layer to form a smooth surface that may be utilized in subsequent steps. The method is suitable for the electropolishing of metal surfaces after formation of filled vias for through-silicon via processes employing metals such as copper, tungsten, aluminum, or alloys thereof. The remaining barrier layer may be reused to fabricate the redistribution layer.
摘要翻译： 一种避免使用CMP去除电镀铜面并在后端（“BEOL”）制造工艺中重复使用阻挡层的方法。 电抛光用于去除沉积的表面金属，在阻挡层处停止以形成可以在后续步骤中使用的光滑表面。 该方法适用于通过使用诸如铜，钨，铝或其合金的金属的工艺形成用于通过硅的填充通孔之后的金属表面的电解抛光。 剩余的阻挡层可以重新用于制造再分布层。
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