公开(公告)号：US11811192B2

公开(公告)日：2023-11-07

申请号：US17254612

申请日：2019-06-18

Applicant: TRUMPF Photonics, Inc.

Inventor： Stephan Strohmaier ,  Arne-Heike Meissner-Schenk ,  Gerald Urban ,  Gerd Hansen ,  Christian Carstens

IPC: H01S5/024

CPC classification number: H01S5/024 ,  H01S5/02415 ,  H01S5/02469

Abstract: A diode laser arrangement includes a diode laser device, first and second cooling elements and at least one spacing device. The laser device and spacing device are mutually spaced apart between the first and second cooling elements. The laser device and the spacing device are disposed on respective first and second outer surfaces of respective cooling elements. The first and second cooling elements cool the laser device. The laser device has first and second diode main surfaces. The first diode main surface is on the first outer surface in a first front region and/or the second diode main surface is on the second outer surface in a second front region. The spacing device places the first outer surface in the first front region parallel to the first diode main surface, and/or the second outer surface in the second front region parallel to the second diode main surface.

公开(公告)号：US20220376478A1

公开(公告)日：2022-11-24

申请号：US17323329

申请日：2021-05-18

Applicant: Trumpf Photonics, Inc.

Inventor： Thilo Vethake ,  Stefan Heinemann ,  Le Zhao

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/023 ,  H01S5/042

Abstract: Methods, devices, and systems for laser diode packaging platforms are provided. In one aspect, a laser diode assembly includes a heat sink and a plurality of laser diode units horizontally spaced apart from one another on the heat sink. Each laser diode unit includes: a first submount positioned on the heat sink and spaced apart from adjacent another first submount, a laser diode including an active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer, a bottom side of the laser diode being positioned on the first submount, and a second submount positioned on a top side of the laser diode and spaced apart from adjacent another second submount. The first submount, the laser diode, and the second submount in the laser diode unit are vertically positioned on the heat sink. The laser diodes of the plurality of laser diode units are electrically connected in series.

公开(公告)号：US20210126426A1

公开(公告)日：2021-04-29

申请号：US17254616

申请日：2019-06-18

Applicant: TRUMPF Photonics, Inc.

Inventor： Christoph Tillkorn ,  Stephan Strohmaier ,  Steffen Ried

IPC: H01S5/024 ,  H01S5/40

Abstract: A diode laser arrangement for the cooling of and supply of electrical current to diode laser devices, having at least two stacks, each having a diode laser device which is configured to emit a laser beam, an upper cooling device, and a lower cooling device. The diode laser device is arranged on the upper cooling device and on the lower cooling device such that the diode laser device is arranged between the upper cooling device and the lower cooling device. The upper and lower cooling devices are in each case electrically connected to the diode laser device arranged therebetween. The upper cooling device and/or the lower cooling device of a stack are in each case formed as a microchannel cooler. The upper cooling device and/or the lower cooling device of a stack in each case have substantially no electrical insulation with respect to the diode laser device arranged therebetween.

公开(公告)号：US09450377B1

公开(公告)日：2016-09-20

申请号：US14702852

申请日：2015-05-04

Applicant: TRUMPF PHOTONICS INC.

Inventor： Robert Wallace Roff ,  Yufeng Li ,  Hans-Georg Treusch ,  Stefan Heinemann

IPC: H01S3/04 ,  H01S5/00 ,  H01S5/022 ,  H01S5/40 ,  G02B27/30 ,  G02B3/00

CPC classification number: G02B3/0037 ,  G02B27/30 ,  H01S5/005 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/4012 ,  H01S5/4018 ,  H01S5/4025 ,  H01S5/4043

Abstract: A laser diode assembly contains a plurality of laser diode chips packaged closely in a row. Each laser diode chip is bonded on both P-side and N-side to first and second sub-mounts. The sub-mounts are then attached to a cooling carrier, with both bonding surfaces perpendicular to the top surface of the carrier. The direction of laser radiation is parallel to the carrier top surface, and the distance between the top of the active area of the laser diode chip and the carrier is preferably in a range of half a pitch between individual laser sources packaged in a row or preferably in a range of 0.2 mm to 1 mm to allow efficient cooling for high power operation. The sub-mounts may be electrically conductive, or they may be of insulating material at least partially covered with a conducting layer. A laser diode chip is bonded uniquely to a set of sub-mounts or may share a sub-mount with another laser diode chip.

Abstract translation: 激光二极管组件包含多个紧密地封装在一起的激光二极管芯片。 每个激光二极管芯片在P侧和N侧接合到第一和第二子安装座。 然后将副安装座附接到冷却载体，两个粘合表面垂直于载体的顶表面。 激光辐射的方向平行于载体顶表面，并且激光二极管芯片的有效区域的顶部与载体之间的距离优选地在一行封装的各个激光源之间的间距的半个 在0.2 mm至1 mm的范围内，以实现高功率运行的高效冷却。 子安装座可以是导电的，或者它们可以是至少部分地被导电层覆盖的绝缘材料。 激光二极管芯片独特地结合到一组子安装座，或者可以与另一个激光二极管芯片共享一个子座。

公开(公告)号：USRE41643E1

公开(公告)日：2010-09-07

申请号：US10778019

申请日：2004-02-13

Applicant: Dmitri Zalmanovich Garbuzov ,  Joseph Hy Abeles ,  John Charles Connolly

Inventor： Dmitri Zalmanovich Garbuzov ,  Joseph Hy Abeles ,  John Charles Connolly

IPC: H01S5/00

CPC classification number: H01S5/20 ,  B82Y20/00 ,  H01S5/2031 ,  H01S5/305 ,  H01S5/34306

Abstract: A semiconductor laser diode having increased efficiency and therefore increased power output. The laser diode includes a body of a semiconductor material having therein a waveguide region which is not intentionally doped so as to have a doping level of no greater than about 5×1016/cm3. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.

Abstract translation: 半导体激光二极管具有增加的效率并因此增加功率输出。 激光二极管包括半导体材料体，其中具有不是有意掺杂的波导区域，以便具有不大于约5×10 16 / cm 3的掺杂水平。 在波导区域内是用于产生光学光学模式的装置，例如至少一个量子阱区域。 相反导电类型的包层区域在波导区域的相对侧上。 波导区域的厚度，至少500纳米的厚度以及波导和包层区域的组成是这样的，以便将波导区域中的光学模式限制到光学模式产生不会 从波导区域重叠到包层区域大于约5％。

公开(公告)号：US07687291B2

公开(公告)日：2010-03-30

申请号：US11277602

申请日：2006-03-27

Applicant: Greg Charache ,  John Hostetler ,  Ching-Long Jiang ,  Raymond J. Menna ,  Radosveta Radionova ,  Robert W. Roff ,  Holger Schlüter

Inventor： Greg Charache ,  John Hostetler ,  Ching-Long Jiang ,  Raymond J. Menna ,  Radosveta Radionova ,  Robert W. Roff ,  Holger Schlüter

IPC: H01L21/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/4031

Abstract: Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.

Abstract translation: 制备二极管激光器的前面和后面的方法包括控制第一室内的气氛，使得氧含量和水蒸气含量被控制在预定水平内，并将二极管激光器从受控气氛中的晶片 第一室以形成在二极管激光器的正面和背面上憎恨预定厚度的自然氧化物层。 在切割之后，二极管激光器在受控气氛中从第一室输送到第二室，部分去除二极管激光器的前面和后面上的自然氧化物层，在正面和背面形成无定形表面层 二极管激光器的小面以及二极管激光器的前面和后面被钝化。

公开(公告)号：US20210119413A1

公开(公告)日：2021-04-22

申请号：US17254625

申请日：2019-06-18

Applicant: TRUMPF Photonics, Inc.

Inventor： Stephan Strohmaier ,  Arne-Heike Meissner-Schenk ,  Gerald Urban ,  Gerd Hansen ,  Christian Carstens

IPC: H01S5/024 ,  H01S5/0237

Abstract: A diode laser arrangement includes at least one emitter, first and second cooling devices and a first connecting layer. The emitter is configured to emit a laser beam and is disposed between the first and second cooling devices. The first and second cooling devices are each configured for cooling the emitter. The emitter is connected to the first cooling device by the first connecting layer, and the first connecting layer has a connecting material or is composed of a connecting material selected from a group including gold, a gold alloy, silver, a silver alloy, a silver sintered material, copper, a copper alloy, nickel, a nickel alloy, palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, a germanium alloy, tin, a tin alloy, aluminum, an aluminum alloy, indium, an indium alloy, lead and a lead alloy.

公开(公告)号：US10547159B1

公开(公告)日：2020-01-28

申请号：US16217331

申请日：2018-12-12

Applicant: Trumpf Photonics Inc.

Inventor： Carlo Holly ,  Stefan Heinemann ,  Suhit Ranjan Das ,  Prasanta Modak

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/40 ,  H01S5/20 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S5/327

Abstract: A semiconductor laser diode includes multiple layers stacked along a first direction, in which the multiple layers include: a first multiple of semiconductor layers; an optical waveguide on the first multiple of semiconductor layers, in which the optical waveguide includes a semiconductor active region for generating laser light, and in which the optical waveguide defines a resonant cavity having an optical axis; and a second multiple of semiconductor layers on the optical waveguide region, in which a resistivity profile of at least one layer of the multiple layers varies gradually between a maximum resistivity and a minimum resistivity along a second direction extending orthogonal to the first direction, in which a distance between the maximum resistivity and the minimum resistivity is greater than at least about 2 microns.

公开(公告)号：US09972968B2

公开(公告)日：2018-05-15

申请号：US15133334

申请日：2016-04-20

Applicant: Trumpf Photonics, Inc.

Inventor： Qiang Zhang ,  Haiyan An ,  Hans Georg Treusch

IPC: H01S5/02 ,  H01S5/028 ,  H01S5/343 ,  H01S5/10 ,  H01J37/32 ,  C30B23/06 ,  C30B29/48 ,  C23C14/46

CPC classification number: H01S5/0282 ,  C23C14/021 ,  C23C14/46 ,  C23C14/568 ,  C30B23/02 ,  C30B23/066 ,  C30B29/48 ,  H01J37/32082 ,  H01J37/32743 ,  H01J37/32816 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/335 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/10 ,  H01S5/34313 ,  H01S5/4025

Abstract: Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.

公开(公告)号：US09413136B1

公开(公告)日：2016-08-09

申请号：US14794254

申请日：2015-07-08

Applicant: Thilo Vethake ,  Jeffrey Eisenmann ,  Stefan Heinemann

Inventor： Thilo Vethake ,  Jeffrey Eisenmann ,  Stefan Heinemann

IPC: H01S5/024

CPC classification number: H01S5/02423 ,  H01S5/0071 ,  H01S5/02216 ,  H01S5/02252 ,  H01S5/024 ,  H01S5/02407 ,  H01S5/02476 ,  H01S5/4012 ,  H01S5/405

Abstract: A laser module has a unitary base including stepped platforms with an offset relative to an adjacent platform, each stepped platform accommodating a laser source with at least a first and a second plurality of stepped platforms, each platform accommodating a cooling channel inside at a predetermined depth below the top surface of the platform to conduct a flow of cooling fluid provided on an inlet, the cooling channel running under a platform having microchannels, the cooling channels being connected to a fluid inlet with an inlet manifold that provides cooling fluid at the inlet and an outlet manifold to dispose the cooling fluid with waste heat at an outlet, the laser module producing in one embodiment no less than 100 Watt of optical power.

Abstract translation: 激光模块具有单一基座，其包括相对于相邻平台偏置的阶梯式平台，每个阶梯式平台容纳具有至少第一和第二多个台阶平台的激光源，每个平台在预定深度内容纳冷却通道 在平台的顶部表面下方，以便设置在入口上的冷却流体流，冷却通道在具有微通道的平台下运行，冷却通道连接到流体入口，入口歧管在入口处提供冷却流体， 出口歧管，用于在出口处设置具有废热的冷却流体，在一个实施例中，激光模块产生不小于100瓦的光功率。