公开(公告)号：US07525168B2

公开(公告)日：2009-04-28

申请号：US12072103

申请日：2008-02-22

申请人： Tzu-Chiang Hsieh

发明人： Tzu-Chiang Hsieh

IPC分类号： H01L31/00

CPC分类号： H01L27/14609 ,  H01L27/14618 ,  H01L27/14667 ,  H01L2924/0002 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/363 ,  H04N5/374 ,  H04N5/37457 ,  H01L2924/00

摘要： A MOS or CMOS based active pixel sensor designed for operation with zero or close to zero potential across the pixel photodiodes to minimize or eliminate dark current. In preferred embodiments the pixel photodiodes are produced with a continuous pin or nip photodiode layer laid down over pixel electrodes of the sensor. In this preferred embodiment, the voltage potential across the pixel photodiode structures is maintained constant and close to zero, preferably less than 1.0 volts. This preferred embodiment enables the photodiode to be operated at a constant bias condition during the charge detection cycle. Setting this constant bias condition close to zero (near “short circuit” condition) assures that dark current is substantially zero.

摘要翻译： 一个基于MOS或CMOS的有源像素传感器设计用于在像素光电二极管之间以零或接近零电位工作，以最小化或消除暗电流。 在优选实施例中，通过在传感器的像素电极上放置的连续的针或压区光电二极管层来产生像素光电二极管。 在该优选实施例中，跨越像素光电二极管结构的电压电位保持恒定并接近零，优选小于1.0伏特。 该优选实施例使得光电二极管能够在电荷检测周期期间以恒定的偏压状态工作。 将该恒定偏置条件设置为接近零（接近“短路”条件），确保暗电流基本上为零。

公开(公告)号：US07276749B2

公开(公告)日：2007-10-02

申请号：US11361426

申请日：2006-02-24

申请人： Peter Martin ,  Michael G. Engelman ,  Calvin Chao ,  Teu Chiang Hsieh ,  Milan Pender

发明人： Peter Martin ,  Michael G. Engelman ,  Calvin Chao ,  Teu Chiang Hsieh ,  Milan Pender

IPC分类号： H01L31/062

CPC分类号： H01L31/1808 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L31/0322 ,  H01L31/03682 ,  H01L31/105 ,  H01L31/1055 ,  Y02E10/541 ,  Y02E10/546

摘要： A microcrystalline germanium image sensor array. The array includes a number of pixel circuits fabricated in or on a substrate. Each pixel circuit comprises a charge collecting electrode for collecting electrical charges and a readout means for reading out the charges collected by the charge collecting electrode. A photodiode layer of charge generating material located above the pixel circuits convert electromagnetic radiation into electrical charges. This photodiode layer includes microcrystalline germanium and defines at least an n-layer, and i-layer and a p-layer. The sensor array also includes and a surface electrode in the form of a grid or thin transparent layer located above the layer of charge generating material. The sensor is especially useful for imaging in visible and near infrared spectral regions of the electromagnetic spectrum and provides imaging with starlight illumination.

摘要翻译： 微晶锗图像传感器阵列。 阵列包括在衬底中或衬底上制造的多个像素电路。 每个像素电路包括用于收集电荷的电荷收集电极和用于读出由电荷收集电极收集的电荷的读出装置。 位于像素电路上方的电荷产生材料的光电二极管层将电磁辐射转换成电荷。 该光电二极管层包括微晶锗并且至少限定n层，i层和p层。 传感器阵列还包括位于电荷产生材料层之上的格栅或薄透明层形式的表面电极。 该传感器特别适用于在电磁光谱的可见光和近红外光谱区域成像，并提供具有星光照明的成像。

公开(公告)号：US20090224351A1

公开(公告)日：2009-09-10

申请号：US12082138

申请日：2008-04-09

申请人： Tzu-Chiang Hsieh

发明人： Tzu-Chiang Hsieh

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14618 ,  H01L27/14667 ,  H01L2924/0002 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/363 ,  H04N5/3745 ,  H04N5/37452 ,  H01L2924/00

摘要： A MOS or CMOS based active pixel sensor designed for operation with zero or close to zero potential across the pixel photodiodes to minimize or eliminate dark current. In this preferred embodiment, the voltage potential across the pixel photodiode structures is maintained constant and close to zero, preferably less than 1.0 volts. This preferred embodiment enables the photodiode to be operated at a constant bias condition during the charge detection cycle. In preferred embodiments the pixel photodiodes are produced with a continuous pin or nip photodiode layer laid down over pixel electrodes of the sensor. In other preferred embodiments the pixel photodiode structures are produced beside and physically isolated from the regions where CMOS circuits are formed. In some of these preferred embodiments the isolated pixel photodiode structures are comprised of crystalline germanium deposited in cavities in a silicon substrate. This embodiment can be adapted especially for imaging at short wave infrared frequencies. Preferred embodiments are adapted for correlated double sampling.

摘要翻译： 一个基于MOS或CMOS的有源像素传感器设计用于在像素光电二极管之间以零或接近零电位工作，以最小化或消除暗电流。 在该优选实施例中，跨越像素光电二极管结构的电压电位保持恒定并接近零，优选小于1.0伏特。 该优选实施例使得光电二极管能够在电荷检测周期期间以恒定的偏压状态工作。 在优选实施例中，通过在传感器的像素电极上放置的连续的针或压区光电二极管层来产生像素光电二极管。 在其它优选实施例中，像素光电二极管结构在与形成CMOS电路的区域旁边产生物理隔离。 在这些优选实施例中的一些中，孤立的像素光电二极管结构由沉积在硅衬底中的空腔中的结晶锗组成。 该实施例可以特别适用于短波红外频率的成像。 优选实施例适用于相关双重采样。

公开(公告)号：US07411233B2

公开(公告)日：2008-08-12

申请号：US10229955

申请日：2002-08-27

申请人： Calvin Chao ,  Tzu-Chiang Hsieh ,  Michael Engelmann ,  Milam Pender

发明人： Calvin Chao ,  Tzu-Chiang Hsieh ,  Michael Engelmann ,  Milam Pender

IPC分类号： H01L31/036 ,  H01L31/113 ,  H01L31/00 ,  H01L31/075

CPC分类号： H04N5/37452 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14667 ,  H04N5/3575 ,  H04N5/359 ,  H04N5/363

摘要： An active pixel sensor for producing images from electron-hole producing radiation includes a crystalline semiconductor substrate having an array of electrically conductive diffusion regions, an interlayer dielectric (ILD) layer formed over the crystalline semiconductor substrate and comprising an array of contact electrodes, and an interconnect structure formed over the ILD layer, wherein the interconnect structure includes at least one layer comprising an array of conductive vias. An array of patterned metal pads is formed over the interconnect structure and are electrically connected to an array of charge collecting pixel electrodes. A radiation absorbing structure includes a photoconductive N-I-B-P photodiode layer formed over the interconnect structure, and a surface electrode layer establishes an electrical field across the radiation absorbing structure and between the surface electrode layer and each of the array of charge collecting pixel electrodes. An array measurement circuit measures the charge collected and outputs pixel data defining an image.

摘要翻译： 用于从电子空穴产生辐射产生图像的有源像素传感器包括具有导电扩散区阵列的晶体半导体衬底，形成在晶体半导体衬底上并包括接触电极阵列的层间电介质（ILD）层，以及 所述互连结构形成在所述ILD层上，其中所述互连结构包括包括导电通孔阵列的至少一个层。 图案化的金属焊盘的阵列形成在互连结构上并且电连接到电荷收集像素电极的阵列。 辐射吸收结构包括在互连结构上形成的光导N-I-B-P光电二极管层，并且表面电极层在辐射吸收结构之间以及表面电极层和电荷收集像素电极阵列中的每一个之间建立电场。 阵列测量电路测量所收集的电荷并输出定义图像的像素数据。

公开(公告)号：US07196391B2

公开(公告)日：2007-03-27

申请号：US11481655

申请日：2006-07-05

申请人： Tzu-Chiang Hsieh

发明人： Tzu-Chiang Hsieh

IPC分类号： H01L31/00

CPC分类号： H01L27/14692 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

摘要： A MOS or CMOS sensor with a multi-layer photodiode layer covering an array of active pixel circuits. The multi-layer photodiode layer of each pixel is fabricated as continuous layers of charge generating material on top of the MOS and/or CMOS pixel circuits so that extremely small pixels are possible with almost 100 percent packing factors. The sensor includes special features to minimize or eliminate pixel to pixel crosstalk. A micro-lens array with a micro-lens positioned above each pixel directs light illuminating the pixel toward the central portion of the pixel and away from its edges. Also, preferably carbon is added to doped amorphous silicon N or P bottom layer of the multi-layer photodiode layer to increase the electrical resistivity in the bottom layer to further discourage crosstalk. In preferred embodiments each of the pixels define a tiny surface area equal to or larger than about 3.24 square microns and smaller than or equal to about 25 square microns. Detailed descriptions are provided for two general types of sensors. The first type has a pixel count of about 0.3 to 1.9 million pixels and are especially suited for sues such as cell phone cameras. The second type with pixel count of between about 1.9 million pixels to more than 5 million pixels is especially suited for high definition television cameras.

摘要翻译： 具有覆盖有源像素电路阵列的多层光电二极管层的MOS或CMOS传感器。 每个像素的多层光电二极管层被制造为在MOS和/或CMOS像素电路的顶部上的电荷产生材料的连续层，使得极小的像素可能具有几乎100％的包装因子。 该传感器包括最小化或消除像素到像素串扰的特殊功能。 具有位于每个像素上方的微透镜的微透镜阵列引导将像素照射到像素的中心部分并远离其边缘的光。 此外，优选将碳添加到多层光电二极管层的掺杂非晶硅N或P底层，以增加底层中的电阻率，以进一步阻止串扰。 在优选实施例中，每个像素限定等于或大于约3.24平方微米且小于或等于约25平方微米的微小表面积。 提供了两种一般类型的传感器的详细描述。 第一种类型的像素数约为0.3到190万像素，特别适用于诸如手机摄像头等。 像素数在约190万到500万像素之间的第二种类型特别适用于高分辨率电视摄像机。

公开(公告)号：US07436038B2

公开(公告)日：2008-10-14

申请号：US10785833

申请日：2004-02-23

申请人： Michael G. Engelmann ,  Calvin Chao ,  Tzu-Chiang Hsieh ,  Peter Martin ,  Milam Pender

发明人： Michael G. Engelmann ,  Calvin Chao ,  Tzu-Chiang Hsieh ,  Peter Martin ,  Milam Pender

IPC分类号： H01L31/00

CPC分类号： G01J5/02 ,  G01J5/024 ,  G01J5/026 ,  G01J5/04 ,  G01J5/046 ,  G01J5/22 ,  G01J5/52 ,  G01J2005/0077 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/1055 ,  H01L31/109 ,  H01L31/113 ,  H04N5/2351 ,  H04N5/2353 ,  H04N5/33 ,  H04N5/332 ,  H04N5/365 ,  H04N5/3651 ,  H04N5/374 ,  H04N5/37455 ,  H04N5/378 ,  Y02E10/545 ,  Y02E10/548

摘要： A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide/cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count. Further advantages of the invention include low electrical bias voltages, low power consumption, compact packaging, and radiation hardness. In special preferred embodiments CMOS stitching technology is used to provide multi-million pixel focal plane array sensors. One embodiments of the invention made without stitching is a two-million pixel sensor. Other preferred embodiments available using stitching techniques include sensors with 250 million (or more) pixels fabricated on a single wafer. A particular application of these very high pixel count sensors is as a focal plane array for a rapid beam steering telescope in a low earth orbit satellite useful for tracking over a 1500-meter wide track with a resolution of 0.3 meter.

摘要翻译： 一种用于在宽光谱范围内进行高性能成像的MOS或CMOS传感器，包括红外光谱带的部分。 这些宽光谱范围还可以包括可见光谱的部分或全部，因此传感器具有日光和夜视能力。 该传感器包括在多个像素MOS或CMOS读出阵列上的连续多层光电二极管结构，其中光电二极管结构被选择为包括在近红外光谱范围内的响应。 优选实施例在CMOS读出阵列上结合微晶铜铟二硒化物/硫化镉光电二极管结构。 替代的优选实施例在CMOS读出阵列上结合了微晶硅锗光电二极管结构。 这些实施例中的每一个为增强的灵敏度，像素尺寸和像素数量提供了大大超过GEN III夜视技术的图像性能的夜视。 本发明的另外的优点包括低偏置电压，低功耗，紧凑的封装和辐射硬度。 在特别优选实施例中，CMOS拼接技术用于提供数百万像素焦平面阵列传感器。 没有拼接的本发明的一个实施例是200万像素传感器。 使用缝合技术可获得的其它优选实施例包括在单个晶片上制造的具有2.5亿（或更多）像素的传感器。 这些非常高的像素数传感器的特定应用是用于在低地球轨道卫星中的快速波束转向望远镜的焦平面阵列，其用于在分辨率为0.3米的1500米宽的轨道上进行跟踪。

公开(公告)号：US20100248399A1

公开(公告)日：2010-09-30

申请号：US12383717

申请日：2009-03-25

申请人： Tzu-Chiang Hsieh

发明人： Tzu-Chiang Hsieh

IPC分类号： H01L21/66 ,  H01L25/16 ,  H01L21/31

CPC分类号： H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L2224/02166 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/49171 ,  H01L2924/01055 ,  H01L2924/10253 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for wafer-to-wafer bonding of a sensor readout circuitry separately fabricated with a silicon substrate to a photodiode device made of non-silicon materials grown from a separate substrate. In preferred embodiments the non-silicon materials are epitaxially grown on a silicon wafer. The bonding technique of preferred embodiments of the present invention utilizes lithographically pre-fabricated metallic interconnects to connect each of a number of pixel circuits on a readout circuit wafer to each of a corresponding number of pixel photodiodes on a photodiode wafer. The metallic interconnects are extremely small (with widths of about 2 to 4 microns) compared to prior art bump bonds with the solder balls of diameter typically larger than 20 microns. The present invention also provides alignment techniques to assure proper alignment of the interconnects during the bonding step.

摘要翻译： 将由硅衬底分开制造的传感器读出电路的晶圆与晶片结合到由从单独衬底生长的非硅材料制成的光电二极管器件的方法。 在优选实施例中，非硅材料在硅晶片上外延生长。 本发明的优选实施例的接合技术利用光刻预制的金属互连将读出电路晶片上的多个像素电路中的每一个连接到光电二极管晶片上的相应数量的像素光电二极管中的每一个。 与现有技术的凸块接合（其直径通常大于20微米）的焊球相比，金属互连极小（具有约2至4微米的宽度）。 本发明还提供了对准技术，以确保在接合步骤期间互连的正确对准。

公开(公告)号：US20090256156A1

公开(公告)日：2009-10-15

申请号：US12283821

申请日：2008-09-15

申请人： Tzu-Chiang Hsieh

发明人： Tzu-Chiang Hsieh

IPC分类号： H01L31/112

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H01L27/14649 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/363 ,  H04N5/374

摘要： A hybrid MOS or CMOS image sensor. The sensor includes photon-sensing elements comprised of an array of photo-sensing regions deposited in the form of separate islands on or in a substrate. Pixel circuitry is created on and/or in the substrate at or near the edge of or beneath the photon-sensing elements. The photo-sensing elements may be comprised of multiple photo-sensing semiconductor layers or be created in a single photon-sensing semiconductor layer. Special circuitry is provided to keep the potential across the pixel photon-sensing element at or near zero volts to minimize or eliminate dark current. The potential difference is preferably less than 1.0 volt. The circuitry also keeps the small potential difference across the photodiodes constant or approximately constant throughout the charge collection cycle. In preferred embodiments the substrate is a crystalline substrate and the photon-sensing elements are separated from the substrate by a dielectric material except for a hole at the bottom through which the material of the photon-sensing element can be grown epitaxially from the substrate.

摘要翻译： 混合MOS或CMOS图像传感器。 传感器包括光子感测元件，其包括以衬底上或衬底中的分离岛形式沉积的光敏区域阵列。 在光子感测元件的边缘或其下方或附近在基底上和/或底物上形成像素电路。 光敏元件可以由多个感光半导体层组成，或者可以在单个光电传感半导体层中产生。 提供特殊电路以保持像素光子感测元件处于或接近零伏的电位，以最小化或消除暗电流。 电位差优选小于1.0伏特。 电路还在整个电荷收集周期内保持光电二极管之间的小电位差恒定或近似恒定。 在优选实施例中，衬底是晶体衬底，并且光子感测元件通过介电材料与基底分离，除了底部的孔之外，光子感测元件的材料可以通过该孔从衬底外延生长。

公开(公告)号：US20060164533A1

公开(公告)日：2006-07-27

申请号：US11389356

申请日：2006-03-24

申请人： Tzu-Chiang Hsieh ,  Calvin Chao

发明人： Tzu-Chiang Hsieh ,  Calvin Chao

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/3765 ,  H01L27/14632 ,  H04N5/2257 ,  H04N5/2353 ,  H04N5/353 ,  H04N5/374

摘要： An electronic imaging sensor. The sensor includes an array of photo-sensing pixel elements for producing image frames. Each pixel element defines a photo-sensing region and includes a charge collecting element for collecting electrical charges produced in the photo-sensing region, and a charge storage element for the storage of the collected charges. The sensor also includes charge sensing elements for sensing the collected charges, and charge-to-signal conversion elements. The sensor also includes timing elements for controlling the pixel circuits to produce image frames at a predetermined normal frame rate based on a master clock signal (such as 12 MHz or 10 MHz). This predetermined normal frame rate which may be a video rate (such as about 30 frames per second or 25 frames per second) establishes a normal maximum per frame exposure time. The sensor includes circuits (based on prior art techniques) for adjusting the per frame exposure time (normally based on ambient light levels) and novel frame rate adjusting features for reducing the frame rate below the predetermined normal frame rate, without changing the master clock signal, to permit per frame exposure times above the normal maximum exposure time. This permits good exposures even in very low light levels. (There is an obvious compromise of lowering of the frame rate in conditions of very low light levels, but in most cases this is preferable to inadequate exposure.) These adjustments can be automatic or manual.

摘要翻译： 电子成像传感器。 传感器包括用于产生图像帧的光敏像素元件阵列。 每个像素元件限定光敏区域，并且包括用于收集在光敏区域中产生的电荷的电荷收集元件和用于存储所收集的电荷的电荷存储元件。 传感器还包括用于感测收集的电荷的电荷感测元件以及电荷到信号转换元件。 传感器还包括用于控制像素电路以基于主时钟信号（例如12MHz或10MHz）以预定正常帧速率产生图像帧的定时元件。 该预定的正常帧速率可以是视频速率（例如每秒约30帧或每秒25帧）建立每帧曝光时间的正常最大值。 该传感器包括用于调整每帧曝光时间（通常基于环境光水平）和用于将帧速率降低到低于预定正常帧速率的新帧速率调整特征的电路（基于现有技术），而不改变主时钟信号 允许每帧曝光时间高于正常最大曝光时间。 即使在非常低的光照水平下，这也允许良好的曝光。 （在非常低的光照条件下，降低帧速率有一个明显的妥协，但在大多数情况下，这比曝光不足是好的。）这些调整可以是自动的或手动的。