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公开(公告)号：US20170273182A1
公开(公告)日：2017-09-21
申请号：US15503637
申请日：2015-09-01
Applicant: LG CHEM, LTD.
Inventor： Chee-Sung PARK , Cheol-Hee PARK , Ha Na LEE , Ha Nah JEONG , Jae Hyun KIM , Hsin Hee JUN , Eun Kyu SEONG , Su Jeong LEE
CPC classification number: H05K1/09 , C08J7/123 , C08J2369/00 , C08K3/22 , C08K2003/2248 , C08K2003/2293 , C23C18/1612 , C23C18/1641 , C23C18/2013 , C23C18/204 , H01B1/22 , H01B5/14 , H01B13/00 , H05K1/0353 , H05K3/105 , H05K3/181 , H05K2201/032
Abstract: The present invention relates to a composition for forming a conductive pattern which allows micro conductive patterns to be formed on various polymeric resin products or resin layers by a very simplified process, a method for forming a conductive pattern using the composition, and a resin structure having the conductive pattern. The composition for forming a conductive pattern comprises: a polymeric resin; and a nonconductive metallic compound including a first metal, a second metal and a third metal, wherein the nonconductive metallic compound has a three-dimensional structure including a plurality of first layers (edge-shared octahedral layers) having a structure in which octahedrons comprising two metals from among the first metal, the second metal and the third metal which share the edges thereof with one another are two-dimensionally connected to one other, and a second layer which includes a metal of a different type from the first layer and is arranged between adjacent first layers, and wherein a metallic core including the first metal, the second metal or the third metal or an ion thereof is formed from the nonconductive metallic compound by electromagnetic radiation.
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2.发明申请公开(公告)号：US20170263349A1
公开(公告)日：2017-09-14
申请号：US15510891
申请日：2015-09-17
Applicant: LG CHEM, LTD.
Inventor： Han Nah JEONG , Chee-Sung PARK , Ha Na LEE , Cheol-Hee PARK , Jae Hyun KIM , Shin Hee JUN , Eun Kyu SEONG , Su Jeong LEE
CPC classification number: C01B15/16 , C01G3/006 , C01G55/004 , C01P2002/30 , C01P2004/38 , C08G65/38 , C08G75/0209 , C08K3/32 , C08K2003/326 , C08K2003/328 , C08L55/02 , C08L2205/24 , C09D5/24 , C09D7/61 , C09D169/00 , H01B1/026 , H01B5/14 , H05K1/09 , H05K3/185 , H05K2203/072 , H05K2203/107
Abstract: The present invention relates to a composition for forming a conductive pattern and a resin structure having a conductive pattern, wherein the composition makes it possible to form a fine conductive pattern on various polymer resin products or resin layers through a simple process, and can more effectively meet needs of the art, such as displaying various colors. The composition for forming a conductive pattern, comprises: a polymer resin; and a non-conductive metal compound having a predetermined chemical structure, and may be a composition for forming a conductive pattern through electromagnetic irradiation, by which a metal nucleus is formed from the non-conductive metal compound.
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3.发明申请METHOD FOR FORMING CONDUCTIVE PATTERN BY DIRECT RADIATION OF ELECTROMAGNETIC WAVE, AND RESIN STRUCTURE HAVING CONDUCTIVE PATTERN THEREON (As Amended) 审中-公开通过直接辐射电磁波形成导电图案的方法和具有导电图案的树脂结构（如修改）公开(公告)号：US20160212860A1
公开(公告)日：2016-07-21
申请号：US14910915
申请日：2014-07-24
Applicant: LG CHEM, LTD.
Inventor： Jae Hyun KIM , Jae Jin KIM , Cheol-Hee PARK , Chee-Sung PARK , Shin Hee JUN , Sang Yun JUNG , Han Nah JEONG
CPC classification number: C23C18/31 , C09D5/24 , C23C18/1608 , C23C18/1612 , C23C18/1641 , C23C18/1689 , C23C18/204 , C23C18/2053 , C23C18/2073 , C23C18/22 , C23C18/30 , C23C18/32 , C23C18/38 , C25D5/02 , C25D5/56 , H05K1/0296 , H05K1/09 , H05K3/02 , H05K3/181 , H05K2201/09009
Abstract: Provided are a method for forming conductive pattern by direct radiation of an electromagnetic wave capable of forming fine conductive patterns on various kinds of polymer resin products or resin layers by a simplified process, even without containing specific inorganic additives in the polymer resin itself, and a resin structure having the conductive pattern formed thereon.The method for forming the conductive pattern by direct radiation of the electromagnetic wave includes: forming a first region having a predetermined surface roughness by selectively radiating the electromagnetic wave on a polymer resin substrate; forming a conductive seed on the polymer resin substrate; forming a metal layer by plating the polymer resin substrate having the conductive seed formed thereon; and removing the conductive seed and the metal layer from a second region of the polymer resin substrate, wherein the second region has surface roughness smaller than that of the first region.
Abstract translation: 提供一种通过简单的方法直接辐射能够在各种聚合物树脂产品或树脂层上形成精细导电图案的电磁波形成导电图案的方法，即使在聚合物树脂本身中也不含有特定的无机添加剂，以及 具有形成在其上的导电图案的树脂结构。 通过电磁波的直接辐射形成导电图案的方法包括：通过在聚合物树脂基板上选择性地辐射电磁波，形成具有预定表面粗糙度的第一区域; 在聚合物树脂基材上形成导电种子; 通过对其上形成有导电种子的聚合物树脂基板进行电镀而形成金属层; 以及从所述聚合物树脂基板的第二区域去除所述导电种子和所述金属层，其中所述第二区域的表面粗糙度小于所述第一区域的表面粗糙度。
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4.发明申请公开(公告)号：US20150053899A1
公开(公告)日：2015-02-26
申请号：US14470564
申请日：2014-08-27
Applicant: LG CHEM, LTD.
Inventor： Cheol-Hee PARK , Se-Hui SOHN , Seung-Tae HONG , Won-Jong KWON , Tae-Hoon KIM
CPC classification number: H01L35/18 , H01B1/08 , H01L31/0272 , H01L31/032 , H01L31/072 , H01L31/0725 , H01L35/16 , H01L35/22 , Y02E10/50
Abstract: Thermoelectric conversion materials, expressed by the following formula: Bi1-xMxCu1-wOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0≦x 0. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.
Abstract translation: 热电转换材料，由下式表示：Bi1-xMxCu1-wOa-yQ1yTeb-zQ2z。 这里，M是选自Ba，Sr，Ca，Mg，Cs，K，Na，Cd，Hg，Sn，Pb，Mn，Ga，In，Tl，As和Sb中的至少一种元素; Q1和Q2是选自S，Se，As和Sb中的至少一种元素; x，y，z，w，a和b分别为0和nlE; x <1,0
0。 这些热电转换材料可以用于热电转换元件，其中它们可以代替常用的热电转换材料，或者与常用的热电转换材料一起使用。 -
5.发明申请公开(公告)号：US20190288172A1
公开(公告)日：2019-09-19
申请号：US16312842
申请日：2017-10-17
Applicant: LG CHEM, LTD.
Inventor： Yu Ho MIN , Cheol-Hee PARK
Abstract: A chalcogen-containing compound that exhibits low thermal conductivity and excellent thermoelectric properties, and exhibits excellent phase stability even at relatively low temperature, a method for preparing the same, and a thermoelectric element including the same.
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Patent Agency Ranking
公开(公告)号：US20160218267A1
公开(公告)日：2016-07-28
申请号：US14915181
申请日：2014-10-17
Applicant: LG CHEM, LTD.
Inventor： Kyung-Moon KO , Tae-Hoon KIM , Cheol-Hee PARK
CPC classification number: H01L35/16 , B22F3/105 , B22F2003/1051 , C01B19/002 , C01B19/007 , C01P2002/72 , C01P2002/85 , C01P2004/01 , C01P2004/80 , C01P2006/40 , C22C9/00
Abstract: Disclosed is a thermoelectric material with excellent thermoelectric conversion performance. The thermoelectric material includes a matrix having Cu and Se, a Cu-containing particle, and an Ag-containing structure.
Abstract translation: 公开了具有优异热电转换性能的热电材料。 热电材料包括具有Cu和Se的基体，含Cu颗粒和含Ag结构。
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公开(公告)号：US20160197256A1
公开(公告)日：2016-07-07
申请号：US14437119
申请日：2014-09-18
Applicant: LG CHEM, LTD.
Inventor： Hyun-Woo CHOI , Byung-Kyu LIM , Tae-Hoon KIM , Cheol-Hee PARK , Eun-Ah YOU , O-Jong KWON
IPC: H01L35/16 , H01L31/0272
CPC classification number: H01L35/16 , C01B19/002 , C01B19/007 , C01P2006/32 , C01P2006/40 , H01L31/0272 , H01L31/02725 , H01L35/18 , H01L35/20 , H01L35/34
Abstract: Disclosed is a new compound semiconductor material which may be used for thermoelectric material or the like, and its applications. The compound semiconductor may be represented by Chemical Formula 1 below: Chemical Formula 1 Bi2TexSen−xInyMz where in Chemical Formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, 2.5
Abstract translation: 公开了可用于热电材料等的新的化合物半导体材料及其应用。 化合物半导体可以由下述化学式1表示：化学式1 <化学式1> Bi2TexSen-xInyMz其中在化学式1中，M为选自Cu，Fe，Co，Ag和Ni中的至少一种， 2.5
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8.发明申请公开(公告)号：US20140190544A1
公开(公告)日：2014-07-10
申请号：US14175513
申请日：2014-02-07
Applicant: LG CHEM, LTD.
Inventor： Cheol-Hee PARK , Se-Hui SOHN , Seung-Tae HONG , Won-Jong KWON , Tae-Hoon KIM
IPC: H01L35/16 , H01L31/0272 , H01L35/18
CPC classification number: H01L35/16 , C09K11/881 , C09K11/885 , H01B1/08 , H01B1/10 , H01L31/0272 , H01L31/032 , H01L31/072 , H01L31/0725 , H01L35/18 , H01L35/22 , Y02E10/50
Abstract: Compound semiconductors, expressed by the following formula: Bi1-xMxCuwOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0≦x
Abstract translation: 化合物半导体，由下式表示：Bi1-xMxCuwOa-yQ1yTeb-zQ2z。 这里，M是选自Ba，Sr，Ca，Mg，Cs，K，Na，Cd，Hg，Sn，Pb，Eu，Sm，Mn，Ga，In，Tl，As和 锑 Q1和Q2是选自S，Se，As和Sb中的至少一种元素; x，y，z，w，a和b分别为0＆nlE; x <1,0,0
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公开(公告)号：US20180033939A1
公开(公告)日：2018-02-01
申请号：US15551033
申请日：2016-07-21
Applicant: LG CHEM, LTD.
Inventor： O-Jong KWON , Hyun-Woo CHOI , Byung-Kyu LIM , Myung-Jin JUNG , Cheol-Hee PARK
Abstract: Provided are: a compound semiconductor thermoelectric material, having excellent thermoelectric conversion performance by having an excellent power factor and ZT value, and in particular, having excellent thermoelectric conversion performance at a low temperature; a method for manufacturing the same; and a thermoelectric module, a thermoelectric generator, or a thermoelectric cooling device, etc. using the same. The compound semiconductor thermoelectric material according to the present invention comprises: an n-type compound semiconductor matrix; and n-type particles which are dispersed in the matrix, are compound semiconductors which are different from the matrix, and have an average particle size of 1 μm to 100 μm.
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10.发明申请公开(公告)号：US20170297001A1
公开(公告)日：2017-10-19
申请号：US15514318
申请日：2015-10-15
Applicant: LG CHEM, LTD.
Inventor： Sang Yun JUNG , Cheol-Hee PARK , Shin Hee JUN , Won Bae BYUN
CPC classification number: B01J20/16 , B01J20/28061 , B01J20/2808 , B01J20/28083 , B01J20/28092 , B01J20/3085 , B32B7/12 , B32B9/005 , B32B9/041 , B32B15/08 , B32B15/082 , B32B15/088 , B32B15/09 , B32B27/30 , B32B27/304 , B32B27/34 , B32B27/36 , B32B2250/03 , B32B2307/304 , B32B2307/724 , B32B2307/726 , B32B2419/00 , C01B33/26 , C01P2006/12 , C01P2006/16 , C04B18/027 , C04B28/006 , E04B1/803 , F16L59/04 , F16L59/065 , Y02P40/165 , C04B38/0054 , C04B38/0064 , C04B12/005
Abstract: Provided are a core material for a vacuum insulation panel including porous aluminosilicate, and a vacuum insulation panel provided with the same. The core material for the vacuum insulation panel according to the present disclosure has superior long-term durability and improved gas adsorption ability (particularly, superior water absorption ability) while requiring a low raw material cost. The vacuum insulation panel including the core material may exhibit more improved insulation performance by minimizing a reduction in the vacuum degree without an additional getter or absorbent.
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