ANGULAR VELOCITY SENSOR
    2.
    发明申请
    ANGULAR VELOCITY SENSOR 有权
    角速度传感器

    公开(公告)号:US20160138920A1

    公开(公告)日:2016-05-19

    申请号:US14940651

    申请日:2015-11-13

    Abstract: There is provided an angular velocity sensor including first and second mass bodies provided within a first frame, a first flexible connector system connecting the first and second mass bodies and the first frame and that includes at least one sensor to detect displacements of the first and second mass bodies, a second flexible connector system connecting the first frame to a second frame provided separate from the first frame and that includes a driver to drive movement of the first frame relative to the second frame, so angular velocities can be measured based on the first and second mass bodies being enabled to rotate in a first axis direction and translated in a second axis direction, and based on the first frame being flexibly connected to the second frame so that a rotation displacement of the first frame is made in a third axis direction.

    Abstract translation: 提供了包括设置在第一框架内的第一和第二质量体的角速度传感器,连接第一和第二质量体与第一框架的第一柔性连接器系统,并且包括至少一个传感器以检测第一和第二质量体的位移 质量体,第二柔性连接器系统,其将第一框架连接到与第一框架分开设置的第二框架,并且包括用于驱动第一框架相对于第二框架的运动的驱动器,因此角速度可以基于第一框架 并且第二质量体能够沿第一轴线方向旋转并沿第二轴线方向平移,并且基于第一框架柔性地连接到第二框架,使得第一框架的旋转位移在第三轴线方向上 。

    Capacitive Acceleration Sensor with an H-Shaped Beam and Preparation Method Thereof
    3.
    发明申请
    Capacitive Acceleration Sensor with an H-Shaped Beam and Preparation Method Thereof 有权
    具有H形梁的电容式加速度传感器及其制备方法

    公开(公告)号:US20150075284A1

    公开(公告)日:2015-03-19

    申请号:US14387404

    申请日:2012-12-03

    Abstract: A capacitive acceleration sensor with an “H”-shaped beam and a preparation method. The sensor at least includes: a first electrode structural layer, a middle structural layer and a second electrode structural layer; the first electrode structural layer and the second electrode structural layer are provided with electrode lead via holes, respectively; the middle structural layer includes: a frame formed at SOI silicon substrate having a double device layer, a seismic mass whose double sides are symmetrical, and an “H”-shaped elastic beam whose double sides are symmetrical, with one end connected to the frame and the other end connected to the seismic mass, there are anti-overloading bumps and damping grooves symmetrically provided on the two sides of the seismic mass, and the “H”-shaped elastic beam and a bulk silicon layer of the oxygen containing silicon substrate satisfy the requirements therebetween: √{square root over (2)}(a+b+c)

    Abstract translation: 具有“H”形波束的电容式加速度传感器及其制备方法。 传感器至少包括:第一电极结构层,中间结构层和第二电极结构层; 第一电极结构层和第二电极结构层分别设置有电极引线通孔; 中间结构层包括:形成在具有双器件层的SOI硅衬底上的框架,双面对称的地震质量体和双面对称的“H”形弹性梁,其一端连接到框架 另一端连接到地震块,在地震块两侧对称地设有防过载凸块和阻尼槽,“H”形弹性梁和含氧硅衬底的体硅层 满足以下要求:√{平方根超过(2)}(a + b + c)

    SYSTEMS AND METHODS FOR A TIME-BASED OPTICAL PICKOFF FOR MEMS SENSORS
    4.
    发明申请
    SYSTEMS AND METHODS FOR A TIME-BASED OPTICAL PICKOFF FOR MEMS SENSORS 有权
    用于MEMS传感器的基于时间的光学PICKOFF的系统和方法

    公开(公告)号:US20160377434A1

    公开(公告)日:2016-12-29

    申请号:US14860443

    申请日:2015-09-21

    Abstract: Systems and methods for a time-based optical pickoff for MEMS sensors are provided. In one embodiment, a method for an integrated waveguide time-based optical-pickoff sensor comprises: launching a light beam generated by a light source into an integrated waveguide optical-pickoff monolithically fabricated within a first substrate, the integrated waveguide optical-pickoff including an optical input port, a coupling port, and an optical output port; and detecting changes in an area of overlap between the coupling port and a moving sensor component separated from the coupling port by a gap by measuring an attenuation of the light beam at the optical output port, wherein the moving sensor component is moving in-plane with respect a surface of the first substrate comprising the coupling port and the coupling port is positioned to detect movement of an edge of the moving sensor component.

    Abstract translation: 提供了用于MEMS传感器的基于时间的光学拾取的系统和方法。 在一个实施例中,一种用于集成波导时基的光学传感器传感器的方法包括:将由光源产生的光束发射到在第一衬底内单片制造的集成波导光学检测器,所述集成波导光学检测器包括 光输入端口,耦合端口和光输出端口; 并且通过测量光输出端口处的光束的衰减来检测耦合端口和与耦合端口分离的移动传感器部件之间的重叠区域的变化,其中移动传感器部件正在与平面内移动, 相对于包括耦合端口的第一基板的表面和耦合端口被定位成检测移动的传感器部件的边缘的移动。

    MEMS TILT SENSOR
    5.
    发明申请
    MEMS TILT SENSOR 审中-公开
    MEMS倾斜传感器

    公开(公告)号:US20160238630A1

    公开(公告)日:2016-08-18

    申请号:US15138502

    申请日:2016-04-26

    Abstract: An acoustic sensor includes a back plate; at least one back plate electrode coupled to the back plate; a proof of mass with the proof of mass elastically coupled to the back plate; and a proof of mass electrode coupled to the proof of mass. Movement of the sensor causes a capacitance between the proof of mass electrode and the at least one back plate electrode to vary and the capacitance represents a magnitude of the movement of the sensor.

    Abstract translation: 声传感器包括背板; 耦合到所述背板的至少一个背板电极; 质量证明,弹性联接到背板的质量证明; 以及与质量证明相结合的质量电极证明。 传感器的移动导致质量电极和至少一个背板电极之间的电容变化,并且电容表示传感器运动的大小。

    MEMS MULTI-AXIS ACCELEROMETER ELECTRODE STRUCTURE
    6.
    发明申请
    MEMS MULTI-AXIS ACCELEROMETER ELECTRODE STRUCTURE 有权
    MEMS多轴加速度计电极结构

    公开(公告)号:US20130192369A1

    公开(公告)日:2013-08-01

    申请号:US13362955

    申请日:2012-01-31

    CPC classification number: G01C19/5712 G01P15/125 G01P15/18 G01P2015/0822

    Abstract: This document discusses, among other things, an inertial sensor including a single proof-mass formed in an x-y plane of a device layer, the single proof-mass including a single, central anchor configured to suspend the single proof-mass above a via wafer. The inertial sensor further includes first and second electrode stator frames formed in the x-y plane of the device layer on respective first and second sides of the inertial sensor, the first and second electrode stator frames symmetric about the single, central anchor, and each separately including a central platform and an anchor configured to fix the central platform to the via wafer, wherein the anchors for the first and second electrode stator frames are asymmetric along the central platforms with respect to the single, central anchor.

    Abstract translation: 本文件尤其涉及包括形成在器件层的xy平面中的单个校准质量的惯性传感器,该单个校准质量体包括单个中心锚固件,其构造成将通孔晶片上方的单个质量块悬挂 。 惯性传感器还包括形成在惯性传感器的相应第一和第二侧上的器件层的xy平面中的第一和第二电极定子框架,第一和第二电极定子框架关于单个中心锚点对称,并且每个分别包括 中心平台和锚固件,其构造成将中心平台固定到通孔晶片,其中用于第一和第二电极定子框架的锚固件相对于单个中心锚固件沿着中心平台是不对称的。

    MEMS Tilt Sensor
    7.
    发明申请
    MEMS Tilt Sensor 有权
    MEMS倾斜传感器

    公开(公告)号:US20130160547A1

    公开(公告)日:2013-06-27

    申请号:US13705722

    申请日:2012-12-05

    Abstract: An acoustic sensor includes a back plate; at least one back plate electrode coupled to the back plate; a proof of mass with the proof of mass elastically coupled to the back plate; and a proof of mass electrode coupled to the proof of mass. Movement of the sensor causes a capacitance between the proof of mass electrode and the at least one back plate electrode to vary and the capacitance represents a magnitude of the movement of the sensor.

    Abstract translation: 声传感器包括背板; 耦合到所述背板的至少一个背板电极; 质量证明,弹性联接到背板的质量证明; 以及与质量证明相结合的质量电极证明。 传感器的移动导致质量电极和至少一个背板电极之间的电容变化,并且电容表示传感器运动的大小。

    Angular velocity sensor
    8.
    发明授权

    公开(公告)号:US09846036B2

    公开(公告)日:2017-12-19

    申请号:US14940651

    申请日:2015-11-13

    Abstract: There is provided an angular velocity sensor including first and second mass bodies provided within a first frame, a first flexible connector system connecting the first and second mass bodies and the first frame and that includes at least one sensor to detect displacements of the first and second mass bodies, a second flexible connector system connecting the first frame to a second frame provided separate from the first frame and that includes a driver to drive movement of the first frame relative to the second frame, so angular velocities can be measured based on the first and second mass bodies being enabled to rotate in a first axis direction and translated in a second axis direction, and based on the first frame being flexibly connected to the second frame so that a rotation displacement of the first frame is made in a third axis direction.

    Z-AXIS STRUCTURE OF ACCELEROMETER AND MANUFACTURING METHOD OF Z-AXIS STRUCTURE

    公开(公告)号:US20170356929A1

    公开(公告)日:2017-12-14

    申请号:US15546824

    申请日:2015-07-23

    Applicant: Goertek, Inc.

    Inventor: Guoguang ZHENG

    CPC classification number: G01P15/125 G01P15/0802 G01P2015/0822

    Abstract: The present invention discloses a Z-axis structure of an accelerometer and a manufacturing method of the Z-axis structure. The Z-axis structure comprises a substrate, fixed electrodes and a mass block, wherein first anchor is arranged on a surface of the substrate; the fixed electrode is connected onto the corresponding first anchor at an end thereof; the fixed electrode is suspended above the substrate via the first anchor; an intermediate anchor is also arranged on the surface of the substrate; and the mass block is suspended above the fixed electrode via the intermediate anchor. In the Z-axis structure of the present invention, the fixed electrode is connected to the substrate by the first anchor, so that there is certain gap between the fixed electrode and the substrate. Because of the gap, the path for deformation to transmitting from the substrate to the fixed electrode is cut off, such that contact area between the fixed electrode and the substrate is reduced, effectively preventing the deformation of the substrate caused by changes of external stress and temperature from transmitting to the fixed electrode, and greatly reducing zero point offset of a Z-axis structure.

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