专利检索 cpc:"H01L2224/30104" 第 1 页

1.

发明申请
Three dimensional device integration method and integrated device 审中-公开

公开(公告)号：US20080061418A1

公开(公告)日：2008-03-13

申请号：US11980452

申请日：2007-10-31

申请人： Paul Enquist , Gaius Fountain

发明人： Paul Enquist , Gaius Fountain

IPC分类号： H01L29/08 , H01L29/06

CPC分类号： H01L24/08 , H01L21/187 , H01L21/2007 , H01L21/6835 , H01L21/76251 , H01L21/76898 , H01L21/8221 , H01L23/13 , H01L23/36 , H01L23/481 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/26 , H01L24/27 , H01L24/30 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/167 , H01L25/18 , H01L25/50 , H01L27/0688 , H01L27/14634 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2223/6677 , H01L2224/0807 , H01L2224/08123 , H01L2224/1134 , H01L2224/16 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/3005 , H01L2224/30104 , H01L2224/305 , H01L2224/48091 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/80896 , H01L2224/81894 , H01L2224/8303 , H01L2224/83092 , H01L2224/83099 , H01L2224/8319 , H01L2224/83193 , H01L2224/83345 , H01L2224/83359 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83912 , H01L2224/83948 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , Y10S148/012 , Y10S438/977 , H01L2224/13099 , H01L2924/01049 , H01L2924/01031 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82

摘要： A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the semiconductor device, vias may be formed through the semiconductor device to device regions, and interconnection may be formed between said device regions and said contact structures.

2.

发明授权
Three dimensional integrated device 有权
标题翻译：三维一体化设备

公开(公告)号：US06905557B2

公开(公告)日：2005-06-14

申请号：US10192702

申请日：2002-07-11

申请人： Paul M. Enquist

发明人： Paul M. Enquist

IPC分类号： H01L21/331 , H01L21/02 , H01L21/20 , H01L21/60 , H01L21/768 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L21/98 , H01L27/00 , H01L27/04 , H01L27/088 , H01L27/092 , H01L29/737 , H01L29/06

CPC分类号： H01L24/08 , H01L21/187 , H01L21/2007 , H01L21/6835 , H01L21/76251 , H01L21/76898 , H01L21/8221 , H01L23/13 , H01L23/36 , H01L23/481 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/26 , H01L24/27 , H01L24/30 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/167 , H01L25/18 , H01L25/50 , H01L27/0688 , H01L27/14634 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2223/6677 , H01L2224/0807 , H01L2224/08123 , H01L2224/1134 , H01L2224/16 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/3005 , H01L2224/30104 , H01L2224/305 , H01L2224/48091 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/80896 , H01L2224/81894 , H01L2224/8303 , H01L2224/83092 , H01L2224/83099 , H01L2224/8319 , H01L2224/83193 , H01L2224/83345 , H01L2224/83359 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83912 , H01L2224/83948 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , Y10S148/012 , Y10S438/977 , H01L2224/13099 , H01L2924/01049 , H01L2924/01031 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82

摘要： A device integration method and integrated device. The method includes the steps of polishing surfaces of first and second workpieces each to a surface roughness of about 5-10 Å. The polished surfaces of the first and second workpieces are bonded together. A surface of a third workpiece is polished to the surface roughness. The surface of the third workpiece is bonded to the joined first and second workpieces. The first, second and third workpieces may each be a semiconductor device having a thin material formed on one surface, preferably in wafer form. The thin materials are polished to the desired surface roughness and then bonded together. The thin materials may each have a thickness of approximately 1-10 times the surface non-planarity of the material on which they are formed. Any number of devices may be bonded together, and the devices may be different types of devices or different technologies.

摘要翻译： 一种器件集成方法和集成器件。该方法包括以下步骤：将第一和第二工件的表面各自抛光到大约5-10的表面粗糙度。第一和第二工件的抛光表面粘合在一起。将第三工件的表面抛光至表面粗糙度。第三工件的表面被接合到接合的第一和第二工件上。第一，第二和第三工件可以各自是具有在一个表面上形成的薄材料，优选以晶片形式形成的半导体器件。将薄的材料抛光至所需的表面粗糙度，然后粘结在一起。薄材料可以各自具有其形成它们的材料的表面非平面度的大约1-10倍的厚度。任何数量的设备可以结合在一起，并且设备可以是不同类型的设备或不同的技术。

3.

发明授权
Three dimensional device integration method and integrated device 有权
标题翻译：三维设备集成方法和集成设备

公开(公告)号：US09564414B2

公开(公告)日：2017-02-07

申请号：US14746425

申请日：2015-06-22

申请人： ZIPTRONIX, INC.

发明人： Paul M. Enquist , Gaius Gillman Fountain, Jr.

IPC分类号： H01L21/58 , H01L21/304 , H01L23/00 , H01L21/20 , H01L21/683 , H01L21/768 , H01L21/822 , H01L23/13 , H01L23/36 , H01L23/48 , H01L23/538 , H01L25/065 , H01L25/16 , H01L25/00 , H01L27/06 , H01L21/762 , H01L21/18 , H01L23/552 , H01L25/18 , H01L27/146

CPC分类号： H01L24/08 , H01L21/187 , H01L21/2007 , H01L21/6835 , H01L21/76251 , H01L21/76898 , H01L21/8221 , H01L23/13 , H01L23/36 , H01L23/481 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/26 , H01L24/27 , H01L24/30 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/167 , H01L25/18 , H01L25/50 , H01L27/0688 , H01L27/14634 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2223/6677 , H01L2224/0807 , H01L2224/08123 , H01L2224/1134 , H01L2224/16 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/3005 , H01L2224/30104 , H01L2224/305 , H01L2224/48091 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/80896 , H01L2224/81894 , H01L2224/8303 , H01L2224/83092 , H01L2224/83099 , H01L2224/8319 , H01L2224/83193 , H01L2224/83345 , H01L2224/83359 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83912 , H01L2224/83948 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , Y10S148/012 , Y10S438/977 , H01L2224/13099 , H01L2924/01049 , H01L2924/01031 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82

摘要： A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the semiconductor device, vias may be formed through the semiconductor device to device regions, and interconnection may be formed between said device regions and said contact structures.

摘要翻译： 一种器件集成方法和集成器件。该方法可以包括将具有衬底的半导体器件直接接合到元件的步骤; 以及去除所述衬底的一部分以在结合之后露出所述半导体器件的剩余部分。元件可以包括用于热扩散，阻抗匹配或RF隔离的衬底之一，天线以及由无源元件组成的匹配网络。第二热扩散基板可以结合到半导体器件的其余部分。互连可以通过第一或第二基底进行。该方法还可以包括将多个半导体器件接合到元件，并且元件可以具有设置半导体器件的凹部。具有多个接触结构的导体阵列可以形成在半导体器件的暴露表面上，可以通过半导体器件到器件区域形成通孔，并且可以在所述器件区域和所述接触结构之间形成互连。

4.

发明申请
Three dimensional device integration method and integrated device 审中-公开

公开(公告)号：US20060292744A1

公开(公告)日：2006-12-28

申请号：US11514083

申请日：2006-09-01

申请人： Paul Enquist , Gaius Fountain

发明人： Paul Enquist , Gaius Fountain

IPC分类号： H01L21/00

CPC分类号： H01L24/08 , H01L21/187 , H01L21/2007 , H01L21/6835 , H01L21/76251 , H01L21/76898 , H01L21/8221 , H01L23/13 , H01L23/36 , H01L23/481 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/26 , H01L24/27 , H01L24/30 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/167 , H01L25/18 , H01L25/50 , H01L27/0688 , H01L27/14634 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2223/6677 , H01L2224/0807 , H01L2224/08123 , H01L2224/1134 , H01L2224/16 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/3005 , H01L2224/30104 , H01L2224/305 , H01L2224/48091 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/80896 , H01L2224/81894 , H01L2224/8303 , H01L2224/83092 , H01L2224/83099 , H01L2224/8319 , H01L2224/83193 , H01L2224/83345 , H01L2224/83359 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83912 , H01L2224/83948 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , Y10S148/012 , Y10S438/977 , H01L2224/13099 , H01L2924/01049 , H01L2924/01031 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82

摘要： A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the semiconductor device, vias may be formed through the semiconductor device to device regions, and interconnection may be formed between said device regions and said contact structures.

5.

发明公开
WAFER BONDING METHOD AND SEMICONDUCTOR STRUCTURE OBTAINED BY THE SAME 审中-公开

公开(公告)号：US20240030180A1

公开(公告)日：2024-01-25

申请号：US17869297

申请日：2022-07-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Zheng-Yong LIANG , Wei-Ting YEH , Yu-Yun PENG , Keng-Chu LIN

IPC分类号： H01L23/00

CPC分类号： H01L24/83 , H01L24/30 , H01L24/33 , H01L2224/83097 , H01L2224/83031 , H01L2224/83193 , H01L2224/83359 , H01L2224/83896 , H01L2224/83948 , H01L2224/30104 , H01L2224/30505 , H01L2224/33505

摘要： A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, wherein the first bonding layer includes a first metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, wherein the second bonding layer includes a second metal oxide material in an amorphous state; conducting a surface modification process on the first bonding layer and the second bonding layer; bonding the device substrate and the carrier substrate to each other through the first and second bonding layers; and annealing the first and second bonding layers so as to convert the first and second metal oxide materials from the amorphous state to a crystalline state.

6.

发明申请
THREE DIMENSIONAL DEVICE INTEGRATION METHOD AND INTEGRATED DEVICE 有权
标题翻译：三维设备集成方法和集成设备

公开(公告)号：US20150287692A1

公开(公告)日：2015-10-08

申请号：US14746425

申请日：2015-06-22

申请人： ZIPTRONIX, INC.

发明人： Paul M. ENQUIST , Gaius Gillman FOUNTAIN, JR.

IPC分类号： H01L23/00 , H01L27/06

CPC分类号： H01L24/08 , H01L21/187 , H01L21/2007 , H01L21/6835 , H01L21/76251 , H01L21/76898 , H01L21/8221 , H01L23/13 , H01L23/36 , H01L23/481 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/26 , H01L24/27 , H01L24/30 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/167 , H01L25/18 , H01L25/50 , H01L27/0688 , H01L27/14634 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2223/6677 , H01L2224/0807 , H01L2224/08123 , H01L2224/1134 , H01L2224/16 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/3005 , H01L2224/30104 , H01L2224/305 , H01L2224/48091 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/80896 , H01L2224/81894 , H01L2224/8303 , H01L2224/83092 , H01L2224/83099 , H01L2224/8319 , H01L2224/83193 , H01L2224/83345 , H01L2224/83359 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83912 , H01L2224/83948 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , Y10S148/012 , Y10S438/977 , H01L2224/13099 , H01L2924/01049 , H01L2924/01031 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82

摘要： A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the semiconductor device, vias may be formed through the semiconductor device to device regions, and interconnection may be formed between said device regions and said contact structures.

摘要翻译： 一种器件集成方法和集成器件。该方法可以包括将具有衬底的半导体器件直接接合到元件的步骤; 以及去除所述衬底的一部分以在结合之后露出所述半导体器件的剩余部分。元件可以包括用于热扩散，阻抗匹配或RF隔离的衬底之一，天线以及由无源元件组成的匹配网络。第二热扩散基板可以结合到半导体器件的其余部分。互连可以通过第一或第二基底进行。该方法还可以包括将多个半导体器件接合到元件，并且元件可以具有设置半导体器件的凹部。具有多个接触结构的导体阵列可以形成在半导体器件的暴露表面上，可以通过半导体器件到器件区域形成通孔，并且可以在所述器件区域和所述接触结构之间形成互连。