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    Methods of forming graphene-containing switches
    3.
    发明授权
    Methods of forming graphene-containing switches 有权
    形成含石墨烯的开关的方法

    公开(公告)号：US09087874B2

    公开(公告)日：2015-07-21

    申请号：US13763662

    申请日：2013-02-09

    申请人： Micron Technology, Inc.

    发明人： Gurtej S. Sandhu

    IPC分类号： H01L21/479 ,  H01L21/82 ,  H01L21/332 ,  H01L21/768 ,  H01L29/16 ,  H01L29/786 ,  H01L29/66 ,  H01L29/778 ,  H01L23/525 ,  H01L23/532 ,  H01L29/06

    CPC分类号： H01L21/768 ,  H01L23/525 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/1606 ,  H01L29/66022 ,  H01L29/66742 ,  H01L29/7788 ,  H01L29/78642 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Some embodiments include methods of forming graphene-containing switches. A bottom electrode may be formed over a base, and a first electrically conductive structure may be formed to extend upwardly from the bottom electrode. Dielectric material may be formed along a sidewall of the first electrically conductive structure, while leaving a portion of the bottom electrode exposed. A graphene structure may be formed to be electrically coupled with the exposed portion of the bottom electrode. A second electrically conductive structure may be formed on an opposing side of the graphene structure from the first electrically conductive structure. A top electrode may be formed over the graphene structure and electrically coupled with the second electrically conductive structure. The first and second electrically conductive structures may be configured to provide an electric field across the graphene structure.

    摘要翻译： 一些实施方案包括形成含石墨烯的开关的方法。 底部电极可以形成在基底上，并且第一导电结构可以形成为从底部电极向上延伸。 电介质材料可沿着第一导电结构的侧壁形成，同时使底部电极的一部分露出。 石墨烯结构可以形成为与底部电极的暴露部分电耦合。 可以在石墨烯结构的与第一导电结构相对的一侧上形成第二导电结构。 顶部电极可以形成在石墨烯结构之上并与第二导电结构电耦合。 第一和第二导电结构可以被配置为提供跨越石墨烯结构的电场。

    Array substrate and manufacturing method thereof, display device
    4.
    发明授权
    Array substrate and manufacturing method thereof, display device 有权
    阵列基板及其制造方法，显示装置

    公开(公告)号：US09024288B2

    公开(公告)日：2015-05-05

    申请号：US14041151

    申请日：2013-09-30

    申请人： BOE Technology Group Co., Ltd.

    发明人： Tuo Sun

    IPC分类号： H01L29/06 ,  H01L47/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L27/14 ,  H01L29/00 ,  H01L29/15 ,  H01L29/18 ,  H01L33/00 ,  H01L29/20 ,  H01L27/146 ,  H01L21/00 ,  H01L21/82 ,  H01L21/84 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/77

    CPC分类号： H01L33/0041 ,  H01L21/77 ,  H01L29/66022 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78684 ,  Y10S257/911 ,  Y10S438/982

    摘要： Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The manufacturing method of an array substrate, comprising: forming a gate electrode on a base substrate by a first patterning process, and then depositing a gate insulating layer on the base substrate on which the gate electrode is formed; forming source and drain electrodes on the base substrate obtained after the above step, by a second patterning process; forming an active layer formed of a graphene layer, and a protective layer disposed on the active layer, on the base substrate obtained after the above steps, by a third patterning process; and forming a planarizing layer on the base substrate, obtained after the above steps, by a fourth patterning process, in which the planarizing layer is provided with a through hole through which the source or drain electrode is exposed.

    摘要翻译： 本发明的实施例提供阵列基板，其制造方法和显示装置。 阵列基板的制造方法，包括：通过第一图案化工艺在基底基板上形成栅电极，然后在形成有栅电极的基底基板上沉积栅极绝缘层; 通过第二图案化工艺在上述步骤之后获得的基底基板上形成源极和漏极; 通过第三图案化工艺在由上述步骤获得的基底基板上形成由石墨烯层形成的有源层和设置在有源层上的保护层; 以及在上述步骤之后通过第四图案化工艺在基底基板上形成平坦化层，其中平坦化层设置有暴露源极或漏极的通孔。

    Methods of Forming Graphene-Containing Switches
    5.
    发明申请
    Methods of Forming Graphene-Containing Switches 有权
    形成含石墨烯的开关的方法

    公开(公告)号：US20130157420A1

    公开(公告)日：2013-06-20

    申请号：US13763662

    申请日：2013-02-09

    申请人： Micron Technology, Inc.

    发明人： Gurtej S. Sandhu

    IPC分类号： H01L21/768

    CPC分类号： H01L21/768 ,  H01L23/525 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/1606 ,  H01L29/66022 ,  H01L29/66742 ,  H01L29/7788 ,  H01L29/78642 ,  H01L29/78684 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Some embodiments include methods of forming graphene-containing switches. A bottom electrode may be formed over a base, and a first electrically conductive structure may be formed to extend upwardly from the bottom electrode. Dielectric material may be formed along a sidewall of the first electrically conductive structure, while leaving a portion of the bottom electrode exposed. A graphene structure may be formed to be electrically coupled with the exposed portion of the bottom electrode. A second electrically conductive structure may be formed on an opposing side of the graphene structure from the first electrically conductive structure. A top electrode may be formed over the graphene structure and electrically coupled with the second electrically conductive structure. The first and second electrically conductive structures may be configured to provide an electric field across the graphene structure.

    摘要翻译： 一些实施方案包括形成含石墨烯的开关的方法。 底部电极可以形成在基底上，并且第一导电结构可以形成为从底部电极向上延伸。 电介质材料可沿着第一导电结构的侧壁形成，同时使底部电极的一部分露出。 石墨烯结构可以形成为与底部电极的暴露部分电耦合。 可以在石墨烯结构的与第一导电结构相对的一侧上形成第二导电结构。 顶部电极可以形成在石墨烯结构之上并与第二导电结构电耦合。 第一和第二导电结构可以被配置为提供跨越石墨烯结构的电场。

    WIDE GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    WIDE GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    宽带半导体器件及其制造方法

    公开(公告)号：US20140061670A1

    公开(公告)日：2014-03-06

    申请号：US13947765

    申请日：2013-07-22

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Keiji Wada ,  Kenji Kanbara

    IPC分类号： H01L29/872 ,  H01L29/66

    CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L29/0619 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/47 ,  H01L29/475 ,  H01L29/66022 ,  H01L29/6603 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/66212

    摘要： A wide gap semiconductor device has a substrate and a Schottky electrode. The substrate is made of a wide gap semiconductor material and has a first conductivity type. The Schottky electrode is arranged on the substrate to be in contact therewith and is made of a single material. The Schottky electrode includes a first region having a first barrier height and a second region having a second barrier height higher than the first barrier height. The second region includes an outer peripheral portion of the Schottky electrode. Thus, a wide gap semiconductor device capable of achieving less leakage current and a method for manufacturing the same can be provided.

    摘要翻译： 宽间隙半导体器件具有衬底和肖特基电极。 衬底由宽间隙半导体材料制成并具有第一导电类型。 肖特基电极布置在基板上以与其接触并由单一材料制成。 肖特基电极包括具有第一势垒高度的第一区域和具有高于第一势垒高度的第二势垒高度的第二区域。 第二区域包括肖特基电极的外周部分。 因此，可以提供能够实现较少漏电流的宽间隙半导体器件及其制造方法。