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公开(公告)号：US20240218557A1
公开(公告)日：2024-07-04
申请号：US18396266
申请日：2023-12-26
发明人： Carlo Zavattari , Michael Raffeiner , Paolo Delpero , Peter Albrecht , Fabrizio Bonda , Massimo Gariddi , Patrizio Pregnolato , Pietro Valcozzena , Maria Porrini
摘要： Methods for producing an off-orientation single crystal silicon wafer are disclosed. After a single crystal silicon ingot is grown, the single crystal silicon ingot is ground to increase an off-orientation of the single crystal silicon ingot. A wafer is sliced from ground single crystal silicon ingot. The wafer has an off-orientation greater than the ground single crystal silicon ingot.
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公开(公告)号：US20240167193A1
公开(公告)日：2024-05-23
申请号：US18515801
申请日：2023-11-21
CPC分类号： C30B15/24 , C30B15/02 , C30B15/10 , C30B15/206
摘要： A crystal ingot puller includes a crucible for holding a crystal melt, a crystal puller housing that defines a growth chamber, and a polycrystalline feed system for supplying chunk polycrystalline to the crucible. The polycrystalline feed system includes a feed tube having an outer sidewall, an inlet end and an outlet end, and a cooling jacket surrounding the outer sidewall of the feed tube at the outlet end of the feed tube. The cooling jacket cools the outlet end during operation of the ingot puller.
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3.发明申请公开(公告)号：US20100206219A1
公开(公告)日：2010-08-19
申请号：US12719405
申请日：2010-03-08
申请人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/24
CPC分类号： C30B15/22 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： An improvement to a method and an apparatus for growing a monocrystalline silicon ingot from silicon melt according to the CZ process. The improvement performs defining an error between a target taper of a meniscus and a measured taper, and translating the taper error into a feedback adjustment to a pull-speed of the silicon ingot. The conventional control model for controlling the CZ process relies on linear control (PID) controlling a non-linear system of quadratic relationship defined in the time domain between the diameter and the pull-speed. The present invention transforms the quadratic relationship in the time domain between the diameter and the pull-speed into a simile, linear relationship in the length domain between a meniscus taper of the ingot and the pull-speed. The present invention applies a linear control (modified PID) which operates in the length domain, and controls a system that has a linear relationship between the ingot taper and the pull-speed in the length domain to control the diameter of a growing silicon ingot.
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公开(公告)号：US5322591A
公开(公告)日：1994-06-21
申请号：US676773
申请日：1991-03-26
CPC分类号： C30B7/00 , C30B29/34 , Y10S117/902
摘要： The growth of bismuth silicate crystals occurs in a high pressure vessel or autoclave using a hydrothermal growth process. The nutrient material is placed in a sealed container of noble metal, liner, along with a solvent to a selected fill level. A filler fluid is also placed between the liner and the pressure vessel. The oriented seeds are placed in the cooler top seed zone over a baffle that slows the movement of supersaturated liquid from the hotter lower nutrient zone. Using a selected heating schedule for the top and the bottom zones, a plurality of large crystals are grown in the seed zone. The temperature differential is about 5.degree. C.
摘要翻译： 硅酸铋晶体的生长发生在使用水热生长工艺的高压容器或高压釜中。 将营养物质与贵金属，衬里以及溶剂的密封容器一起置于选定的填充水平。 填料流体也放置在衬套和压力容器之间。 将取向的种子放置在挡板上的较冷顶部种子区域中，该挡板减缓来自较热的较低营养区域的过饱和液体的运动。 对于顶部和底部区域使用选定的加热方案，在种子区域中生长多个大晶体。 温差约为5℃
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5.发明授权
公开(公告)号：US5268061A
公开(公告)日：1993-12-07
申请号：US950214
申请日：1992-09-24
申请人： Kuk H. Sunwoo , Jae Y. Ma , Tae H. Kim
发明人： Kuk H. Sunwoo , Jae Y. Ma , Tae H. Kim
CPC分类号： C30B15/34 , C30B15/00 , C30B29/24 , Y10T117/1008 , Y10T117/1036 , Y10T117/1068
摘要： A method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation which involves melting of a starting material in a crucible and lowering of the temperature of crucible to make the resultant melt maintain form three phase regions of an upper liquid pool region, an intermediate semi-rigid region and a lower solid region. A pair of heaters are disposed at the upper and side wall portions of crucible and controlled differently from each other so that the formed lower solid region extends at its peripheral portion throughout the inner surface of the side wall portion of the crucible, thereby minimizing the contact of the formed upper liquid pool region with the whole inner surface of the crucible. For monitoring respective temperatures of various portions in the crucible to control the heaters, there are provided thermocouples which includes a thermocouple for the crystal drawing port member, a thermocouple for the upper portion of crucible, a thermocouple for the upper portion of the side wall of crucible and a thermocouple for the lower portion of crucible.
摘要翻译： 一种使用局部液体池形成生产锰锌铁氧体单晶的方法和装置，其包括在坩埚中熔化原料并降低坩埚的温度以使所得熔体保持形成上部液体的三相区域 池区域，中间半刚性区域和下部固体区域。 一对加热器设置在坩埚的上壁部分和侧壁部分，并且彼此不同地控制，使得形成的下部固体区域在其周边部分延伸贯穿坩埚的侧壁部分的内表面，从而使接触最小化 形成的上部液体池区域与坩埚的整个内表面。 为了监测坩埚中各部分的温度以控制加热器，提供了热电偶，其包括用于晶体抽出口部件的热电偶，用于坩埚上部的热电偶，用于上部侧壁的热电偶 坩埚和用于坩埚下部的热电偶。
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公开(公告)号：US4627887A
公开(公告)日：1986-12-09
申请号：US439603
申请日：1982-11-05
申请人： Emanuel M. Sachs
发明人： Emanuel M. Sachs
CPC分类号： C30B15/002 , C30B15/06 , C30B15/24
摘要： A method and apparatus for stabilizing the edge positions of a ribbon drawn from a melt includes the use of wettable strings drawn in parallel up through the melt surface, the ribbon being grown between the strings. A furnace and various features of the crucible used therein permit continuous automatic growth of flat ribbons without close temperature control or the need for visual inspection.
摘要翻译： 用于稳定从熔体拉出的带状物的边缘位置的方法和装置包括使用平行地穿过熔体表面绘制的可湿性串，所述带在串之间生长。 熔炉和其中使用的坩埚的各种特征允许扁平带的连续自动生长，而不需要温度控制或需要目视检查。
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公开(公告)号：US4594229A
公开(公告)日：1986-06-10
申请号：US238234
申请日：1981-02-25
摘要： An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.
摘要翻译： 提出了一种经济的方法，用于通过从液相固化来形成适用于光伏转换电池的晶体硅薄片。 两个空间分离的，通常由液态硅润湿并在端部由桥接部件连接在一起的空间分离的细丝被浸入硅熔体中，然后从熔体中缓慢地取出，使得在晶体的边缘和长丝之间生长硅晶体 。
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公开(公告)号：US4557793A
公开(公告)日：1985-12-10
申请号：US573729
申请日：1984-01-25
申请人： Helmut Foell , Josef Grabmaier , Juergen Schneider
发明人： Helmut Foell , Josef Grabmaier , Juergen Schneider
CPC分类号： C30B15/34 , Y10S117/90 , Y10T117/104 , Y10T117/1044
摘要： This invention involves a method and apparatus for drawing crystalline bodies from a melt by means of an open-ended drawing nozzle which determines the cross-sectional geometry of the crystalline body. The drawing nozzle is composed of a material which is resistant to the melt. The feed of melt proceeds from a reservoir situated at the lower end of the drawing nozzle and the melt is conveyed to the upper opening thereof by capillary action. In keeping with the present invention, there is provided a drawing nozzle which has an upper opening merging into a contoured surface such that the meniscus formed at the interface between the crystalline and molten phases is freely displaceable on the contoured surface into which the upper opening discharges.
摘要翻译： 本发明涉及一种用于通过确定晶体的横截面几何形状的开口绘图喷嘴从熔体中提取晶体的方法和装置。 拉丝喷嘴由耐熔融材料构成。 熔体进料来自位于拉伸喷嘴下端的储存器，熔体通过毛细管作用输送到其上部开口。 根据本发明，提供了一种绘图喷嘴，其具有合并成轮廓表面的上部开口，使得在结晶相和熔融相之间的界面处形成的弯液面可以在上部开口排出的轮廓表面上自由移动 。
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公开(公告)号：US4546811A
公开(公告)日：1985-10-15
申请号：US396358
申请日：1982-07-08
申请人： Claude Potard
发明人： Claude Potard
IPC分类号： B22D11/04 , B01J19/00 , B22D11/01 , B22D23/00 , C01B33/00 , C03B19/01 , C03B35/26 , C03B37/012 , C03B40/04 , C22B9/16 , C30B11/00 , C30B13/14 , C30B13/30 , C30B15/10 , C30B15/24
CPC分类号： C03B19/01 , C03B35/26 , C03B37/01294 , C03B40/04 , C30B11/002 , C30B11/006 , C30B13/14 , C30B13/30 , C30B15/10 , C30B15/24
摘要： A process for treatment of a liquid mass is described, wherein a liquid mass of a material is separated from a gas-permeable wall for shaping, positioning or moulding the same by means of a gaseous film formed by a gas permeating through a wall of the container.
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公开(公告)号：US3617223A
公开(公告)日：1971-11-02
申请号：US3617223D
申请日：1968-05-21
发明人： BOATMAN JAMES CLAUDE
CPC分类号： C30B15/24 , Y10S117/90 , Y10T117/1012 , Y10T117/1044
摘要： An apparatus for pulling monocrystalline ribbons of silicon from a melt of silicon, which includes a shaping guide, through which the ribbon is pulled, having a heat retentive coating of a material, such as platinum, on the top surface of the guide. The shaping guide preferably includes 45* converging beveled lips on the bottom side thereof oriented toward the melt from which the ribbon is drawn for directing the melt into a rectangular slot formed in the shaping guide near the top surface. The rectangular slot serves to form the silicon in shape of a ribbon. The apparatus also preferably includes a heat reflective member supported above the shaping guide by a quartz pedestal. The heat reflective member serves to assist the coating on the top surface of the shaping guide in maintaining a low temperature differential between the top and bottom surfaces of the shaping guide.
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