公开(公告)号：US20240310167A1

公开(公告)日：2024-09-19

申请号：US18593000

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Kazuki HAGIHARA

IPC: G01B15/04 ,  G06T7/00 ,  G06T7/543 ,  H10B80/00

CPC classification number: G01B15/04 ,  G06T7/001 ,  G06T7/543 ,  H10B80/00 ,  G06T2207/30148

Abstract: A pattern shape measurement method includes acquiring image data of a target pattern obtained by irradiating an observation region of a sample with a charged particle or an electromagnetic wave, generating first contour point group data in which location information of a contour point of the target pattern extracted based on the image data and an index related to an orientation angle of a line connecting a center of the target pattern and the contour point from a reference line passing through the center of the target pattern are associated with each other, and generating, based on a weighting table in which the index and weight determined based on a standard deviation of location information of the contour point of the target pattern present in a direction of the orientation angle are associated with each other and stored, and the first contour point group data, second contour point group data according to the weight.

公开(公告)号：US12055386B2

公开(公告)日：2024-08-06

申请号：US17627456

申请日：2020-06-20

Applicant: Sikora AG

Inventor： Armin Holle ,  Christian Frank

IPC: G01N21/3581 ,  G01B15/02 ,  G01B15/04

CPC classification number: G01B15/02 ,  G01B15/04 ,  G01N21/3581

Abstract: A device for measuring a strand that is tubular includes a first radiation source to emit terahertz radiation in a first measurement region from an inside onto an inner surface of the strand. A first radiation receiver receives terahertz radiation reflected by the strand in a second measurement region. A first evaluation apparatus determines at least one geometric parameter of the strand in the first measurement region. A second radiation source emits terahertz radiation in the second measurement region from an outside onto an outer surface of the strand. A second radiation receiver receives terahertz radiation reflected by the strand in the second measurement region. A second evaluation apparatus determines at least one geometric parameter of the strand in the second measurement region. A third evaluation apparatus determines a change in the at least one geometric parameter of the strand between the first and second measurement regions.

公开(公告)号：US20240102950A1

公开(公告)日：2024-03-28

申请号：US18374289

申请日：2023-09-28

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chun-Ting LIU ,  Po-Ching HE ,  Wei-En FU ,  Chun-Yu LIU

IPC: G01N23/201 ,  G01B15/04 ,  G01N23/2273 ,  H01L21/66

CPC classification number: G01N23/201 ,  G01B15/04 ,  G01N23/2273 ,  H01L22/12 ,  G01N2223/052 ,  G01N2223/1016

Abstract: A method for determining parameters of nanostructures, wherein the method includes steps as follows: Firstly, an X-ray reflection intensity measurement curve of a nanostructure to be tested is obtained by radiating the nanostructure to be tested with X-ray. The X-ray reflection intensity measurement curve is compared with an X-ray reflection intensity standard curve to obtain a comparison result. Subsequently, at least one parameter existing in the nanostructure to be tested is determined according to the comparison result.

公开(公告)号：US11713964B1

公开(公告)日：2023-08-01

申请号：US17574055

申请日：2022-01-12

Applicant: Applied Materials Israel Ltd.

Inventor： David Goldovsky ,  Ido Almog ,  Ronny Barnea

IPC: G01B15/04 ,  H01J37/285 ,  H01J37/244 ,  H01J37/28

CPC classification number: G01B15/04 ,  H01J37/244 ,  H01J37/28 ,  H01J37/285

Abstract: Disclosed herein is a system for profiling holes in non-opaque samples. The system includes: (i) an e-beam source configured to project an e-beam into an inspection hole in a sample, such that a wall of the inspection hole is struck and a localized electron cloud is produced; (ii) a light sensing infrastructure configured to sense cathodoluminescent light, generated by the electron cloud; and (iii) a computational module configured to analyze the measured signal to obtain the probed depth at which the wall was struck. A lateral offset, and/or orientation, of the e-beam is controllable, so as to allow generating localized electron clouds at each of a plurality of depths inside the inspection hole, and thereby obtain information at least about a two-dimensional geometry of the inspection hole.

公开(公告)号：US20230221112A1

公开(公告)日：2023-07-13

申请号：US17574055

申请日：2022-01-12

Applicant: Applied Materials Israel Ltd.

Inventor： David Goldovsky ,  Ido Almog ,  Ronny Barnea

IPC: G01B15/04 ,  H01J37/28 ,  H01J37/244 ,  H01J37/285

CPC classification number: G01B15/04 ,  H01J37/28 ,  H01J37/244 ,  H01J37/285

Abstract: Disclosed herein is a system for profiling holes in non-opaque samples. The system includes: (i) an e-beam source configured to project an e-beam into an inspection hole in a sample, such that a wall of the inspection hole is struck and a localized electron cloud is produced; (ii) a light sensing infrastructure configured to sense cathodoluminescent light, generated by the electron cloud; and (iii) a computational module configured to analyze the measured signal to obtain the probed depth at which the wall was struck. A lateral offset, and/or orientation, of the e-beam is controllable, so as to allow generating localized electron clouds at each of a plurality of depths inside the inspection hole, and thereby obtain information at least about a two-dimensional geometry of the inspection hole.

公开(公告)号：US20230215687A1

公开(公告)日：2023-07-06

申请号：US18090100

申请日：2022-12-28

Applicant: FEI Company

Inventor： Andreas Voigt ,  Trond Varslot ,  Magda Zaoralová

IPC: H01J37/26 ,  G01B15/04 ,  G06T7/73

CPC classification number: H01J37/261 ,  G01B15/04 ,  G06T7/75 ,  G06T2207/10056 ,  G06T2207/10072

Abstract: The present invention relates to a method for acquiring tomographic images of a sample in a microscopy system, wherein the sample comprises a defined region, and wherein the method comprises determining a location in three-dimensional space of the defined region, wherein the method further comprises capturing an image of at least a part of the sample, and wherein the determination of the location in three-dimensional space of the defined region is based, at least in part, on the image of the part of the sample. The present invention also relates to a corresponding microscopy system and a computer program product to perform the method according to the present invention.

公开(公告)号：US11561091B2

公开(公告)日：2023-01-24

申请号：US16455883

申请日：2019-06-28

Applicant: THE UNIVERSITY OF TOKYO ,  MITUTOYO CORPORATION

Inventor： Yutaka Ohtake ,  Tasuku Ito ,  Tomonori Goto ,  Masato Kon

IPC: G01B15/02 ,  G01N23/046 ,  G01B15/04 ,  G01B15/00

Abstract: In measuring a dimension of an object to be measured W made of a single material, a plurality of transmission images of the object to be measured W are obtained by using an X-ray CT apparatus, and then respective projection images are generated. The projection images are registered with CAD data used in designing the object to be measured W. The dimension of the object to be measured W is calculated by using a relationship between the registered CAD data and projection images. In such a manner, high-precision dimension measurement is achieved by using several tens of projection images and design information without performing CT reconstruction.

公开(公告)号：US20230015673A1

公开(公告)日：2023-01-19

申请号：US17683182

申请日：2022-02-28

Applicant: KIOXIA CORPORATION

Inventor： Kazuki HAGIHARA

IPC: G01B15/04 ,  G01N23/2251

Abstract: In a shape measuring method a scattering intensity profile for a first electromagnetic wave is acquired for a substrate having a pattern thereon. A first expected scattering intensity profile for a first virtual structure corresponding to a first parameter group of first parameters including an attention parameter is acquired by a first simulation. A first convergence value is calculated for each of the first parameters in a first fitting process based on the scattering intensity profile and the first expected scattering intensity profile. A second expected scattering intensity profile is then acquired for a second virtual structure corresponding to a second parameter group of second parameters, which includes the attention parameter fixed to the first convergence value. A second convergence value for each of the second parameters is then calculated in a second fitting process based on the scattering intensity profile and the second expected scattering intensity profile.

公开(公告)号：US11530915B2

公开(公告)日：2022-12-20

申请号：US16981973

申请日：2019-08-07

Applicant: Hitachi High-Tech Corporation

Inventor： Kohei Matsuda

IPC: G01B15/04 ,  G06T7/12 ,  G06T7/73 ,  G06K9/62 ,  G06T7/60 ,  G06V10/60

Abstract: The present disclosure relates to a dimension measuring device that shortens a time required for dimension measurement and eliminates errors caused by an operator. A dimension measuring device that measures a dimension of a measurement target using an input image is provided, in which a first image in which each region of the input image is labeled by region is generated by machine learning, an intermediate image including a marker indicating each region of the first image is generated based on the generated first image, a second image in which each region of the input image is labeled by region is generated based on the input image and the generated intermediate image, coordinates of a boundary line between adjacent regions are obtained by using the generated second image, coordinates of a feature point that defines a dimension condition of the measurement target are obtained by using the obtained coordinates of the boundary line, and the dimension of the measurement target is measured by using the obtained coordinates of the feature point.

公开(公告)号：US20220392810A1

公开(公告)日：2022-12-08

申请号：US17770434

申请日：2020-12-08

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Prerna Sonthalia GORADIA ,  Robert J. VISSER

IPC: H01L21/66 ,  G01B15/04 ,  B05D1/00

Abstract: The enclosed disclosure relates to a method and apparatus for depositing functionalized nanoparticles within a semiconductor structure in order to create a nano-layer capable of enhancing imaging and contrast, The semiconductor structure can include any type of VNAND structure or 3D structure, The nanoparticles are formed in high-aspect ratio trenches of the structure and form a nano-layer. The functionalized nanoparticles comprise synthesized nanoparticles as well as organic molecules. The organic molecules are chosen to selectively bind to certain nanoparticles and surface materials.