Chip packaging method and particle chips

    公开(公告)号:US12126322B2

    公开(公告)日:2024-10-22

    申请号:US18315211

    申请日:2023-05-10

    发明人: Jian Wang

    IPC分类号: H03H9/10 H03H3/02 H03H9/05

    摘要: A method for packaging chips includes: flip-chip bonding a plurality of filter chips to be packaged on a substrate to be packaged; applying a first mold material layer on the filter chips to be packaged; applying a second mold material layer on a side of the first mold material layer away from the filter chip to be packaged, the first mold material layer and the second mold material layer forming a first mold layer; thinning the first mold material layer and the second mold material layer to expose substrates of the filter chips to be packaged, and thinning the substrates of the filter chips to be packaged to a preset thickness; applying a second mold layer on the exposed substrates of the filter chips to be packaged to obtain a mold structure; and cutting the mold structure into a plurality of particle chips.

    Filters using decoupled transversely-excited film bulk acoustic resonators

    公开(公告)号:US12126318B2

    公开(公告)日:2024-10-22

    申请号:US17533184

    申请日:2021-11-23

    发明人: Sean McHugh

    摘要: Filter devices and methods of fabrication are disclosed. An acoustic filter device includes a substrate and a piezoelectric plate, a first portion of the piezoelectric plate spanning a first cavity in the substrate and a second portion of the piezoelectric plate spanning a second cavity in the substrate. A decoupling dielectric layer on a front surface of the first and second portions of the piezoelectric plate has a first thickness td1 on the first portion and a second thickness td2, greater than the first thickness, on the second portion. Interleaved fingers of a first interdigital transducer (IDT) are on the decoupling dielectric layer over the first portion of the piezoelectric plate, and interleaved fingers of a second IDT are on the decoupling dielectric layer over the second portion of the piezoelectric plate.

    Vibrator and method for manufacturing vibrator

    公开(公告)号:US12107561B2

    公开(公告)日:2024-10-01

    申请号:US17397650

    申请日:2021-08-09

    发明人: Shigeo Ojima

    IPC分类号: H03H9/10 H03H3/02 H03H9/19

    摘要: A method for manufacturing a vibrator that includes forming excitation electrodes, lead-out electrodes, and first sealing frames on the main surfaces of a crystal piece; forming second sealing frames on the main surfaces of a base part and a lid part; and sealing a crystal vibration element by bonding the first sealing frames to the second sealing frames. The first sealing frames each include a first Ti or Cr base layer 110, and a first Au surface layer. The first Ti or Cr base layers are thinner than the first Au surface layers. The second sealing frames each include a second Ni base layer, and a second AuSn surface layer. The second Ni base layers are thicker than the second AuSn surface layers. The sealing is carried out by alloying the first Au surface layers and the second AuSn surface layers to each other.

    BULK ACOUSTIC WAVE RESONANCE DEVICE AND METHOD FOR FORMING SAME, FILTERING DEVICE, AND RADIO FREQUENCY FRONT END DEVICE

    公开(公告)号:US20240322783A1

    公开(公告)日:2024-09-26

    申请号:US18578726

    申请日:2022-07-13

    发明人: Xing HAN Jian ZHOU

    摘要: A bulk acoustic wave resonator device of the present invention comprises: a cavity; a first electrode layer, at least one end of the first electrode layer being located above or inside the cavity; a piezoelectric layer, the cavity and the first electrode layer being located on a first side of the piezoelectric layer; a second electrode layer located on a second side, a region where the first electrode layer, the second electrode layer and the piezoelectric layer overlap being a resonance region; a first passive structure located on the first side and having a first overlapping portion with at least one edge of the first electrode layer; and a second passive structure located on the second side and having a second overlapping portion with at least one edge of the second electrode layer. The first passive structure comprises: a first raised portion located inside the resonance region; and a first extension portion located outside the resonance region, wherein the first raised portion protrudes with respect to the first extension portion. The second passive structure comprises: a second raised portion located inside the resonance region; and a second extension portion located outside the resonance region, wherein the second raised portion protrudes with respect to the second extension portion. The present invention suppresses parasitic edge mode, and improves ZP and corresponding Q value.

    TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR

    公开(公告)号:US20240305259A1

    公开(公告)日:2024-09-12

    申请号:US18667474

    申请日:2024-05-17

    IPC分类号: H03H3/02 H03H9/02 H03H9/205

    摘要: A bulk acoustic resonator is provided that includes a substrate having a plurality of layers and having a cavity disposed in at least one of the plurality of layers of the substrate; a piezoelectric layer attached to the substrate and including a portion that is over the cavity in the substrate; and an interdigital transducer (IDT) on a surface of the piezoelectric layer and including interleaved fingers on the portion of the piezoelectric layer that is over the cavity. Moreover, at least one opening extends through the portion of the piezoelectric layer that is over the cavity. The at least one opening is an elongated slot.