Abstract:
A method for densifying a porous structure using boron nitride, and a porous structure densified with boron nitride, are disclosed. The method comprises producing densified articles in a very short time and enables the production of high-density, crack-free articles. According to the method, the porous structure is placed in a precursor selected from borazines of formula RBNH wherein R is a halogen or hydrogen, and the whole is induction heated at a pressure of at least 1.2 x 10 Pa to cause decomposition of the precursor and thereby form boron nitride which can be deposited inside the pores of the porous structure.
Abstract:
A method of controlling defects in boron nitride films in order to stabilize certain crystallographic structures is disclosed. Such defects include, for example, nitrogen vacancies, boron interstitials, and substitutional dopants. In particular, films produced by the method of sputtering in pure inert gas atmospheres have a tetrahedrally coordinated structure and are rich in nitrogen vacancies. Films produced by the same method in inert gas with a sufficient nitrogen overpressure have a completely stoichiometric graphitic structure. These results are expected for any defect type having a greater free energy of formation in the graphitic form of boron nitride than in the tetrahedral forms. The methods of the invention are applicable to any film growth technique capable of incorporating such defects.
Abstract:
Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapor deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.
Abstract:
Die Erfindung betrifft einen Faserverbundwerkstoff (1) mit keramischen Fasern (2) und einer keramischen Matrix (3), in welche die Fasern (2) eingebettet sind, wobei zwischen den jeweiligen Fasern (2) und der Matrix (3) eine jeweilige Gleitschicht (4) angeordnet ist. Um eine verbesserte mechanische und/oder thermische Belastbarkeit zu realisieren, ist vorgesehen, dass die jeweilige Gleitschicht (4) mittels Atomlagenabscheidung an der jeweiligen Faser (2) angeordnet ist.
Abstract:
Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definitions. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber, flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate.
Abstract:
Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein.
Abstract:
According to the present invention, there are provided processes for preparing a porous composite material comprising a metal and a two-dimensional nanomaterial. In one aspect, the processes comprise the steps of: providing a powder comprising metal particles; heating the powder such that the metal particles fuse to form a porous scaffold; and forming a two-dimensional nanomaterial on a surface of the porous scaffold by chemical vapour deposition (CVD). Also provided are materials obtainable by the present processes, and products comprising said materials.
Abstract:
The present invention relates to a sole (1) of an iron comprising a metal sole body (11; 21) having a ceramic gliding surface (12; 22) intended for ironing. - According to the invention, the sole body has a hardness greater than or equal to 150 HV and forms a substrate bearing a surface layer of transition metal boronitride or boride forming the gliding surface. The present invention also relates to an iron comprising a sole of the aforementioned type associated with a heating body (4) comprising electric heating means (5), and to a method for producing a sole of the aforementioned type.
Abstract:
Coated polymer compositions having improved dielectric strength are disclosed. The coated polymer compositions can comprise a polymer substrate and an inorganic material. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
Abstract:
A hexagonal boron nitride thin film is grown on a metal surface of a growth substrate and then annealed. The hexagonal boron nitride thin film is coated with a protective support layer and released from the metal surface. The boron nitride thin film together with the protective support layer can then be transferred to any of a variety of arbitrary substrates.