公开(公告)号：WO2012011929A1

公开(公告)日：2012-01-26

申请号：PCT/US2010/052462

申请日：2010-10-13

Applicant: TESSERA, INC. ,  OGANESIAN, Vage ,  MOHAMMED, Llyas ,  MITCHELL, Craig ,  HABA, Belgacem ,  SAVALIA, Piyush

Inventor： OGANESIAN, Vage ,  MOHAMMED, Llyas ,  MITCHELL, Craig ,  HABA, Belgacem ,  SAVALIA, Piyush

IPC: H01L21/302 ,  B32B5/00

CPC classification number: H01L23/5384 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L29/0657 ,  H01L2224/0237 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81805 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A structure including a first semiconductor chip 20 with front and rear surfaces 24, 26 and a cavity 36 in the rear surface. A second semiconductor chip 70 is mounted within the cavity. The first chip 20 may have vias 48 extending from the cavity to the front surface and via conductors 54 within these vias serving to connect the additional microelectronic element 70 to the active elements of the first chip 20. The structure may have a volume comparable to that of the first chip 20 alone and yet provide the functionality of a multi-chip assembly. A composite chip 720 incorporating a body 722 and a layer 702 of semiconductor material mounted on a front surface 724 of the body similarly may have a cavity 736 extending into the body from the rear surface 726 and may have an additional microelectronic element 770 mounted in such cavity 736.

Abstract translation: 包括在后表面中具有前表面24和后表面26的第一半导体芯片20和空腔36的结构。 第二半导体芯片70安装在腔内。 第一芯片20可以具有从空腔延伸到前表面的通孔48，以及用于将附加微电子元件70连接到第一芯片20的有源元件的这些通孔内的导体54。结构可具有与之相当的体积 的第一芯片20，并提供多芯片组件的功能。 装配有主体722的复合芯片720和安装在主体的前表面724上的半导体材料层类似地可以具有从后表面726延伸到主体中的空腔736，并且可以具有安装在其上的附加微电子元件770 空腔736。

公开(公告)号：WO2012078709A2

公开(公告)日：2012-06-14

申请号：PCT/US2011063653

申请日：2011-12-07

Applicant: TESSERA INC ,  OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED LLYAS ,  SAVALIA PIYUSH ,  MITCHELL CRAIG

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED LLYAS ,  SAVALIA PIYUSH ,  MITCHELL CRAIG

IPC: H01L25/065 ,  H01L21/60 ,  H01L21/98 ,  H01L27/06

CPC classification number: H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/80 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02123 ,  H01L2224/0215 ,  H01L2224/0311 ,  H01L2224/0332 ,  H01L2224/03466 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05015 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05186 ,  H01L2224/05191 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/06181 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15165 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/81805 ,  H01L2924/06

Abstract: A microelectronic unit 12 includes a substrate 20 and an electrically conductive element 40. The substrate 20 can have a CTE less than 10 ppm/°C, a major surface 21 having a recess 30 not extending through the substrate, and a material 50 having a modulus of elasticity less than 10 GPa disposed within the recess. The electrically conductive element 40 can include a joining portion 42 overlying the recess 30 and extending from an anchor portion 41 supported by the substrate 20. The joining portion 42 can be at least partially exposed at the major surface 21 for connection to a component 14 external to the microelectronic unit 12.

Abstract translation: 微电子单元12包括基板20和导电元件40.基板20可以具有小于10ppm /℃的CTE，具有未延伸穿过基板的凹部30的主表面21和具有 设置在凹槽内的弹性模量小于10GPa。 导电元件40可以包括覆盖凹部30并且从由基板20支撑的锚定部分41延伸的连接部分42.接合部分42可以在主表面21处至少部分地暴露以连接到外部部件14 到微电子单元12。

公开(公告)号：WO2012106001A1

公开(公告)日：2012-08-09

申请号：PCT/US2011/035855

申请日：2011-05-10

Applicant: DIGITALOPTICS CORPORATION EAST ,  OGANESIAN, Vage ,  HABA, Belgacem ,  MOHAMMED, Llyas ,  SAVALIA, Piyush ,  MITCHELL, Craig

Inventor： OGANESIAN, Vage ,  HABA, Belgacem ,  MOHAMMED, Llyas ,  SAVALIA, Piyush ,  MITCHELL, Craig

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14645

Abstract: A microelectronic image sensor assembly (10) for backside illumination and method of making same are provided. The assembly (10) includes a microelectronic element (100) having contacts (106) exposed at a front face (102) and light sensing elements (114) arranged to receive light of different wavelengths through a rear face (104). A semiconductor region (110) has an opening (118) overlying at least one of first and second light sensing elements (114a, 114b), the semiconductor region (110) having a first thickness (112a) between the first light sensing element (114a) and the rear face (104) and a second thickness (112b) between the second light sensing element (114b) and the rear face (104). A light-absorbing material (116) overlies the semiconductor region (110) within the opening (118) above at least one of the light sensing elements (114) such that the first and second light sensing elements (114a, 114b) receive light of substantially the same intensity.

Abstract translation: 提供了一种用于背面照明的微电子图像传感器组件（10）及其制造方法。 组件（10）包括具有暴露在前表面（102）处的触点（106）的微电子元件（100）和被布置成通过后表面（104）接收不同波长的光的光感测元件（114）。 半导体区域（110）具有覆盖第一和第二光感测元件（114a，114b）中的至少一个的开口（118），所述半导体区域（110）在第一光感测元件（114a）之间具有第一厚度（112a） ）和后表面（104）之间的第二厚度（112b）和第二光感测元件（114b）和后表面（104）之间的第二厚度（112b）。 光吸收材料（116）覆盖在至少一个感光元件（114）之上的开口（118）内的半导体区域（110），使得第一和第二光感测元件（114a，114b）接收 基本相同的强度。

公开(公告)号：WO2012078709A3

公开(公告)日：2012-06-14

申请号：PCT/US2011/063653

申请日：2011-12-07

Applicant: TESSERA, INC. ,  OGANESIAN, Vage ,  HABA, Belgacem ,  MOHAMMED, Llyas ,  SAVALIA, Piyush ,  MITCHELL, Craig

Inventor： OGANESIAN, Vage ,  HABA, Belgacem ,  MOHAMMED, Llyas ,  SAVALIA, Piyush ,  MITCHELL, Craig

IPC: H01L23/485 ,  H01L25/065 ,  H01L21/60 ,  H01L23/31

Abstract: A microelectronic unit 12 includes a substrate 20 and an electrically conductive element 40. The substrate 20 can have a CTE less than 10 ppm/°C, a major surface 21 having a recess 30 not extending through the substrate, and a material 50 having a modulus of elasticity less than 10 GPa disposed within the recess. The electrically conductive element 40 can include a joining portion 42 overlying the recess 30 and extending from an anchor portion 41 supported by the substrate 20. The joining portion 42 can be at least partially exposed at the major surface 21 for connection to a component 14 external to the microelectronic unit 12.