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公开(公告)号：CN102738106A
公开(公告)日：2012-10-17
申请号：CN201210182881.4
申请日：2007-05-22
IPC: H01L23/488 , H01L23/498 , H01L23/31 , H01L23/24
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN101454887B
公开(公告)日：2011-03-23
申请号：CN200780019384.X
申请日：2007-05-22
IPC: H01L21/60 , H01L23/52 , H01L21/3205
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN102157458A
公开(公告)日：2011-08-17
申请号：CN201110042145.4
申请日：2007-05-22
IPC: H01L23/00 , H01L23/498 , H01L23/31
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN102738107A
公开(公告)日：2012-10-17
申请号：CN201210183161.X
申请日：2007-05-22
IPC: H01L23/488 , H01L23/498 , H01L23/31
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN102157458B
公开(公告)日：2012-10-17
申请号：CN201110042145.4
申请日：2007-05-22
IPC: H01L23/00 , H01L23/498 , H01L23/31
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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Patent Agency Ranking
公开(公告)号：CN101454887A
公开(公告)日：2009-06-10
申请号：CN200780019384.X
申请日：2007-05-22
Applicant: 日本电气株式会社 , 恩益禧电子股份有限公司
IPC: H01L21/60 , H01L23/52 , H01L21/3205
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN100468674C
公开(公告)日：2009-03-11
申请号：CN200580040367.5
申请日：2005-11-25
Applicant: 日本电气株式会社 , 恩益禧电子股份有限公司
IPC: H01L21/60
CPC classification number: H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1319 , H01L2224/132 , H01L2224/133 , H01L2224/1358 , H01L2224/136 , H01L2224/16 , H01L2224/83102 , H01L2224/92125 , H01L2924/0001 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/351 , H05K1/0271 , H05K3/244 , H05K3/3436 , H05K2201/0212 , Y02P70/613 , H01L2924/01015 , H01L2924/00 , H01L2224/11
Abstract: 端子焊盘被形成在LSI芯片的有效面上，并且复合阻挡金属层被提供在该端子焊盘上。由硅树脂构成的多个低弹性颗粒分散在由NiP构成的金属基相中。复合阻挡金属层的膜厚度例如为3μm，并且低弹性颗粒的直径例如为1μm。通过将焊块键合到复合阻挡金属层，半导体器件被安装在线路板上。从而，低弹性颗粒被允许当半导体器件经由焊块键合到线路板时，根据所施加的应力而变形，因此应力可以被吸收。
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公开(公告)号：CN101076884A
公开(公告)日：2007-11-21
申请号：CN200580040367.5
申请日：2005-11-25
Applicant: 日本电气株式会社 , 恩益禧电子股份有限公司
IPC: H01L21/60
CPC classification number: H01L24/13 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05624 , H01L2224/05647 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1319 , H01L2224/132 , H01L2224/133 , H01L2224/1358 , H01L2224/136 , H01L2224/16 , H01L2224/83102 , H01L2224/92125 , H01L2924/0001 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/351 , H05K1/0271 , H05K3/244 , H05K3/3436 , H05K2201/0212 , Y02P70/613 , H01L2924/01015 , H01L2924/00 , H01L2224/11
Abstract: 端子焊盘被形成在LSI芯片的有效面上，并且复合阻挡金属层被提供在该端子焊盘上。由硅树脂构成的多个低弹性颗粒分散在由NiP构成的金属基相中。复合阻挡金属层的膜厚度例如为3μm，并且低弹性颗粒的直径例如为1μm。通过将焊块键合到复合阻挡金属层，半导体器件被安装在线路板上。从而，低弹性颗粒被允许当半导体器件经由焊块键合到线路板时，根据所施加的应力而变形，因此应力可以被吸收。
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公开(公告)号：CN102738107B
公开(公告)日：2014-08-27
申请号：CN201210183161.X
申请日：2007-05-22
Applicant: 瑞萨电子株式会社
IPC: H01L23/488 , H01L23/498 , H01L23/31
CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN101599477B
公开(公告)日：2012-10-10
申请号：CN200910146024.7
申请日：2009-06-05
Applicant: 瑞萨电子株式会社
IPC: H01L23/52 , H01L23/485 , H01L21/60 , H01L21/768
Abstract: 本发明提供一种半导体装置及制造该半导体装置的方法。在该半导体装置中，贯通孔被形成在基板中，并且位于导电性图案下方。绝缘层位于贯通孔的底表面处。导电性图案位于基板的一个表面侧。位于贯通孔与导电性图案之间的绝缘层中形成开口图案，其中从开口图案的外周到贯通孔的中心轴的距离r3比贯通孔中的距离r1小。通过提供开口图案，在贯通孔的底表面处暴露导电性图案。凸块位于基板的背表面侧，并且与贯通电极一体地形成。
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