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公开(公告)号：CN102157458A
公开(公告)日：2011-08-17
申请号：CN201110042145.4
申请日：2007-05-22
IPC分类号： H01L23/00 , H01L23/498 , H01L23/31
CPC分类号： H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN103187387B
公开(公告)日：2015-11-11
申请号：CN201210159760.8
申请日：2012-05-22
申请人： 财团法人工业技术研究院
IPC分类号： H01L23/498 , H01L21/48 , H01L21/60
CPC分类号： H01L24/13 , H01L23/49816 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0346 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05552 , H01L2224/05559 , H01L2224/05572 , H01L2224/05613 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/11848 , H01L2224/11849 , H01L2224/11901 , H01L2224/11906 , H01L2224/13076 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13171 , H01L2224/13184 , H01L2224/16145 , H01L2224/16238 , H01L2224/16503 , H01L2224/16507 , H01L2224/81097 , H01L2224/81193 , H01L2224/8181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/01014 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01322 , H01L2924/10253 , H01L2224/1146
摘要： 本发明公开了一种凸块结构，包括基板、焊垫、电极及凸出电极。所述焊垫设置于所述基板上。所述电极由第一金属材料制成，且设置于焊垫上。所述凸出电极由第二金属材料制成，且设置于所述电极上，其中所述凸出电极的截面积小于电极的截面积。
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公开(公告)号：CN102208388A
公开(公告)日：2011-10-05
申请号：CN201110081344.6
申请日：2011-03-24
申请人： 松下电器产业株式会社
发明人： 樱井大辅
IPC分类号： H01L23/488 , H01L23/00 , H01L21/60
CPC分类号： H01L23/562 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/05666 , H01L2224/11003 , H01L2224/11009 , H01L2224/11332 , H01L2224/1146 , H01L2224/1147 , H01L2224/115 , H01L2224/1182 , H01L2224/11849 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13551 , H01L2224/13562 , H01L2224/13566 , H01L2224/13609 , H01L2224/13611 , H01L2224/14 , H01L2224/16058 , H01L2224/16238 , H01L2224/17 , H01L2224/1701 , H01L2224/1703 , H01L2224/17051 , H01L2224/81011 , H01L2224/81097 , H01L2224/81193 , H01L2224/81194 , H01L2224/81201 , H01L2224/814 , H01L2224/81444 , H01L2224/81825 , H01L2224/8183 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/3841 , H01L2924/01047 , H01L2924/0103 , H01L2924/01082 , H01L2924/01083 , H01L2924/01049 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： 本发明提供一种窄间距、且确保高连接可靠性的简易结构的半导体装置及其制造方法。本发明包括：对电子元器件(1)的多个电极(1a)的至少一个电极赋予两个以上的焊料粒子(3)的工序；将电子元器件(1)的电极(1a)与电路基板(2)的电极(2a)相对配置的工序；使赋予电子元器件(1)的电极(1a)表面的焊料粒子(3)与电路基板(2)的电极(2a)相抵接的工序；以及加热焊料粒子(3)的工序，通过焊料粒子(3)熔融后的两个以上的焊料接合体(8)将电子元器件(1)的电极(1a)和电路基板(2)的电极(2a)进行电连接。
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公开(公告)号：CN105355567A
公开(公告)日：2016-02-24
申请号：CN201510687057.8
申请日：2015-10-22
申请人： 长电科技(滁州)有限公司
CPC分类号： H01L24/97 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L21/4871 , H01L21/50 , H01L24/11 , H01L24/14 , H01L2224/115 , H01L2224/1412
摘要： 本发明涉及一种双面蚀刻水滴凸点式封装结构，其特征在于：它包括基岛（1）和引脚（2），所述基岛（1）正面正装或倒装有芯片（3），所述基岛（1）外围的区域、基岛（1）和引脚（2）之间的区域、基岛（1）和引脚（2）上部的区域以及芯片（3）外均包封有塑封料（5），在所述基岛（1）和引脚（2）的背面分别设置有水滴凸点式外管脚（6）。本发明先将基板双面蚀刻形成管脚形状，进行封装步骤之后，最后不需要贴膜用直接蚀刻的方法将外管脚形成一种水滴凸点式外形结构，使得和PCB板焊接的时候锡膏顺利爬到管脚侧边，加强了管脚和PCB板的结合，避免焊接不牢的问题。
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公开(公告)号：CN102738107B
公开(公告)日：2014-08-27
申请号：CN201210183161.X
申请日：2007-05-22
申请人： 瑞萨电子株式会社
IPC分类号： H01L23/488 , H01L23/498 , H01L23/31
CPC分类号： H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN101454887B
公开(公告)日：2011-03-23
申请号：CN200780019384.X
申请日：2007-05-22
IPC分类号： H01L21/60 , H01L23/52 , H01L21/3205
CPC分类号： H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN102208388B
公开(公告)日：2014-12-17
申请号：CN201110081344.6
申请日：2011-03-24
申请人： 松下电器产业株式会社
发明人： 樱井大辅
IPC分类号： H01L23/488 , H01L23/00 , H01L21/60
CPC分类号： H01L23/562 , H01L23/49811 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/05666 , H01L2224/11003 , H01L2224/11009 , H01L2224/11332 , H01L2224/1146 , H01L2224/1147 , H01L2224/115 , H01L2224/1182 , H01L2224/11849 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13551 , H01L2224/13562 , H01L2224/13566 , H01L2224/13609 , H01L2224/13611 , H01L2224/14 , H01L2224/16058 , H01L2224/16238 , H01L2224/17 , H01L2224/1701 , H01L2224/1703 , H01L2224/17051 , H01L2224/81011 , H01L2224/81097 , H01L2224/81193 , H01L2224/81194 , H01L2224/81201 , H01L2224/814 , H01L2224/81444 , H01L2224/81825 , H01L2224/8183 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/3841 , H01L2924/01047 , H01L2924/0103 , H01L2924/01082 , H01L2924/01083 , H01L2924/01049 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： 本发明提供一种窄间距、且确保高连接可靠性的简易结构的半导体装置及其制造方法。本发明包括：对电子元器件(1)的多个电极(1a)的至少一个电极赋予两个以上的焊料粒子(3)的工序；将电子元器件(1)的电极(1a)与电路基板(2)的电极(2a)相对配置的工序；使赋予电子元器件(1)的电极(1a)表面的焊料粒子(3)与电路基板(2)的电极(2a)相抵接的工序；以及加热焊料粒子(3)的工序，通过焊料粒子(3)熔融后的两个以上的焊料接合体(8)将电子元器件(1)的电极(1a)和电路基板(2)的电极(2a)进行电连接。
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公开(公告)号：CN102738106A
公开(公告)日：2012-10-17
申请号：CN201210182881.4
申请日：2007-05-22
IPC分类号： H01L23/488 , H01L23/498 , H01L23/31 , H01L23/24
CPC分类号： H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN101454887A
公开(公告)日：2009-06-10
申请号：CN200780019384.X
申请日：2007-05-22
申请人： 日本电气株式会社 , 恩益禧电子股份有限公司
IPC分类号： H01L21/60 , H01L23/52 , H01L21/3205
CPC分类号： H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。
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公开(公告)号：CN103187387A
公开(公告)日：2013-07-03
申请号：CN201210159760.8
申请日：2012-05-22
申请人： 财团法人工业技术研究院
IPC分类号： H01L23/498 , H01L21/48 , H01L21/60
CPC分类号： H01L24/13 , H01L23/49816 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/0346 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05552 , H01L2224/05559 , H01L2224/05572 , H01L2224/05613 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/11848 , H01L2224/11849 , H01L2224/11901 , H01L2224/11906 , H01L2224/13076 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13171 , H01L2224/13184 , H01L2224/16145 , H01L2224/16238 , H01L2224/16503 , H01L2224/16507 , H01L2224/81097 , H01L2224/81193 , H01L2224/8181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/01014 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01322 , H01L2924/10253 , H01L2224/1146
摘要： 本发明公开了一种凸块结构，包括基板、焊垫、电极及凸出电极。所述焊垫设置于所述基板上。所述电极由第一金属材料制成，且设置于焊垫上。所述凸出电极由第二金属材料制成，且设置于所述电极上，其中所述凸出电极的截面积小于电极的截面积。
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