Abstract:
A semiconductor device is provided which has internal bonds which do not melt at the time of mounting on a substrate. A bonding material is used for internal bonding of the semiconductor device. The bonding material is obtained by filling the pores of a porous metal body having a mesh-like structure and covering the surface thereof with Sn or an Sn-based solder alloy.
Abstract:
Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.
Abstract:
A plurality of conductor traces (2) are formed on a porous base insulating layer (1) made of porous ePTFE (expanded polytetrafluoroethylene). Each conductor trace has a laminated structure of a seed layer and a conductor layer. A cover insulating layer (3) is formed on the base insulating layer to cover each conductor trace. The ePTFE used as the porous base insulating layer has continuous pores. An average pore size of the ePTFE is not less than 0.05 µm and not more than 1.0 µm.
Abstract:
The invention relates to a substrate (1, 10) for electrical circuits, comprising at least one metal layer (2, 3, 14) and a paper ceramic layer (11), which is joined face to face with the at least one metal layer (2, 3, 14) and has a top side and bottom side (11a, 11b), wherein the paper ceramic layer (11) has a large number of cavities in the form of pores. Especially advantageously, the at least one metal layer (2, 3, 14) is connected to the paper ceramic layer (11) by means of at least one glue layer (6, 6a, 6b), which is produced by applying at least one glue (6a', 6a'', 6b', 6b'') to the metal layer (2, 3, 14) and/or to the paper ceramic layer (11), wherein the cavities in the form of pores in the paper ceramic layer (11) are filled at least at the surface by means of the applied glue (6a', 6a'', 6b', 6b'').
Abstract:
An anisotropically conductive member has an insulating base material, and conductive paths composed of a conductive material which pass in a mutually insulated state through the insulating base material in a thickness direction thereof and which are provided in such a way that a first end of each conductive path is exposed on a first side of the insulating base material and a second end of each conductive path is exposed on a second side of the insulating base material. The conductive paths have a density of at least 2 million paths/mm 2 and the insulating base material is a structure composed of an anodized aluminum film having micropores therein.
Abstract:
A flexible electronic substrate (FES) includes a metallic layer, a dielectric nanoceramic layer formed by oxidation of a surface of the metallic layer, and an electrical circuit formed on a surface of the dielectric layer. The FES may be used for supporting a device, for example a flexible display, an OLED, an optoelectronic device, or a rf device. The dielectric nanoceramic layer has a crystalline structure consisting of substantially equiaxed grains having an average grain size of 100 nanometres or less, a thickness of between 1 micrometre and 50 micrometres, a dielectric strength of greater than 20 KV mm−1, and a thermal conductivity of greater than 3 W/mK. The FES has a minimum bend radius of lower than 25 cm.