Abstract:
L'invention concerne une composition favorisant l'adhésion ainsi qu'un procédé d'utilisation de cette composition pour faciliter l'adhésion de circuits imprimés sur des substrats thermoplastiques. La composition comprend de l'isopropanol soit avec du chlorure de méthylène soit avec du résorcynol. Un ingrédient ajouté comprend du polycyclohéxanone. Le substrat préféré est du polyarylsulfone.
Abstract:
Resin compositions for laminated sheets and laminated sheets produced therefrom are disclosed, the compositions comprising at least one allyl ester resin composed of a polybasic acid and a polyhydric alcohol, wherein an allyl ester group of said resin is bonded to at least one of terminals thereof.
Abstract:
The invention relates to a printed wiring board which forms printed circuit conductors (2) on at least one surface of a base plate (1) and having a solder resist layer (3) on at least a portion of the base plate (1) having the conductors (2). The solder resist film (3) is a foamed material which contains a foamable agent mixed with a main composition of the solder resist film forming ink.
Abstract:
Compositions comprising phenolic end-capped polyimides and epoxy resins containing at least two 1,2-epoxy groups per resin molecule are fusible and/or soluble in polar solvents, for use in forming protective passivation coatings on e.g. electrical components. Preferred polyimides are polysiloxane-modified. The coatings are resistant to solvent and solder flux.
Abstract:
Die Lötmaskenzusammensetzung enthält ein filmbildendes Polymer, ein das Kleben verhinderndes Mittel und einen festen, hochtemperaturbeständigen Füllstoff. Als filmbildende Polymere werden Polyimide/amide; als des Kleben verhinderndes Mittel flüssiges Siliconöl, Terpen, α-Terpineol, trocknendes Öl und Mischungen derselben und als Füllstoff gemahlenes Glas, Zinkoxid, Siliciumoxid, Aluminiumoxid, Sand und Mischungen derselben verwendet. Die Lötmaskenzusammensetzung wird im Siebdruckverfahren in einem bestimmten Muster auf eine Unterlage aufgetragen und durch Trocknen gehärtet. Nach dem Auftragen des Lots bei 300 bis 400°C wird die gelötete Unterlage auf eine Temperatur zwischen 100 und 180°C abgeschreckt, wodurch sich die Lötmaske, unter Einwirken eines Lösungsmittels bei dieser Temperatur, wieder entfernen läßt.
Abstract:
A member (12) to be etched is subjected to etching through a mask layer (13) of a predetermined pattern and that portion of the mask layer (13) overhanging a side-etched portion resulting from the etching is bent down to be jointed by an adhesive binder (33) to the side wall of the side-etched portion to form a first etching-resistant layer (18). Then the member (12) to be etched is subjected again to etching using the first etching-resistant layer (18) and the mask layer (13) as an etching mask.
Abstract:
In the process a first and a second layer (12 or 14 respectively) of insulative material, first layer (12) being etchable selectively in the presence of second layer (14) and a photoresist layer (16), are deposited successively. A pattern corresponding to the negative of the desires metallurgy pattern is formed photolithographically followed by the etching of the areas of layers (12) and (14) not covered by the photoresist. Then a blanket metal layer (24) is deposited. Thereon a planarizing photoresist layer (26, 28) is applied and subsequently etched to expose high spots (32) of metal layer (24), and finally metal high spots (32) are etched to a depth sufficient to expose the surface of second layer (14). The process is useful in forming planar single- or multilevel metal interconnection systems for integrated circuits with high component density.