公开(公告)号：EP2619536A2

公开(公告)日：2013-07-31

申请号：EP11827357.2

申请日：2011-09-20

Applicant: Fairchild Semiconductor Corporation

Inventor： BRYZEK, Janusz

IPC: G01L9/12 ,  G01L7/08 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2207/012 ,  B81C1/00015 ,  B81C1/00158 ,  G01L9/0016 ,  G01L9/0042 ,  G01L9/0073 ,  G01L19/04

Abstract: This document discusses, among other things, an apparatus including a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port, a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion.

公开(公告)号：EP2339357B1

公开(公告)日：2013-03-20

申请号：EP10195522.7

申请日：2010-12-16

Applicant: General Electric Company

Inventor： Mantravadi, Naresh Venkata ,  Gamage, Sisira Kankanam

IPC: G01P15/08 ,  G01P15/12 ,  B81B7/02 ,  G01L9/00 ,  G01L19/00

CPC classification number: G01P15/0802 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81C1/00182 ,  G01L9/0042 ,  G01L19/0092 ,  G01P15/123

公开(公告)号：EP2550234A2

公开(公告)日：2013-01-30

申请号：EP11713722.4

申请日：2011-03-21

Applicant: ELMOS Semiconductor AG

Inventor： TEN-HAVE, Arnd

IPC: B81C1/00

CPC classification number: G01L1/16 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C1/00246 ,  B81C1/00626 ,  B81C2203/0735 ,  G01L9/0047 ,  G01L9/0054 ,  G01L9/0098 ,  H01L27/20 ,  H01L29/66075

Abstract: The invention relates to a method for producing a microelectromechanical device in a material substrate suitable for producing integrated electronic components, in particular a semiconductor substrate, wherein a material substrate (12, 14, 16) is provided on which at least one surface structure (26) is to be formed during production of the device. An electronic component (30) is formed in the material substrate (12, 14, 16) using process steps of a conventional method for producing integrated electronic components. A device component (44) defining the position of the electronic component (30) and/or required for the function of the electronic component (30) is selectively formed on the material substrate (12, 14, 16) from an etching stop material acting as an etching stop in case of etching of the material substrate (12, 14, 16) and/or in case of etching of a material layer (52) disposed on the material substrate (12, 14, 16). When the device component (44) of the electronic component (30) is implemented, a boundary region (48) is also formed on the material substrate (12, 14, 16) along at least a partial section of an edge of the surface structure (26), wherein said boundary region bounds said partial section. The material substrate (12, 14, 16) thus implemented is selectively etched for forming the surface structure (26), in that the edge of the bounding region (48) defines the position of the surface structure (26) to be implemented on the material substrate (12, 14, 16).

公开(公告)号：EP2152627B1

公开(公告)日：2012-10-10

申请号：EP08717248.2

申请日：2008-02-29

Applicant: Robert Bosch GmbH

Inventor： KNESE, Kathrin ,  WEBER, Heribert ,  ARMBRUSTER, Simon

IPC: B81B3/00 ,  G01L9/00

CPC classification number: B81B3/0086 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L9/0042 ,  G01L9/0073

公开(公告)号：EP2492240A1

公开(公告)日：2012-08-29

申请号：EP11155694.0

申请日：2011-02-23

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Ponomarev, Youri Victorovitch

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C2203/0714

Abstract: Disclosed is an integrated circuit (IC) comprising a body (10) including a plurality of circuit elements; and a metallization stack over said circuit elements for interconnecting said circuit elements, wherein the metallization stack comprises a conductive layer portion (22) opposite a flexible further conductive layer portion (24) and separated therefrom by a fluid medium (26), a surface of the said flexible further conductive layer portion being exposed to an external pressure; wherein at least some of the circuit elements are arranged to determining the external pressure by measuring a capacitance across the conductive layer portion and the flexible further conductive layer portion. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路（IC），包括：主体（10），包括多个电路元件; 以及用于互连所述电路元件的所述电路元件上的金属化堆叠，其中所述金属化堆叠包括与柔性的另外的导电层部分（24）相对的导电层部分（22），并通过流体介质（26）与其分离， 所述柔性进一步的导电层部分暴露于外部压力; 其中至少一些电路元件被布置成通过测量导电层部分和柔性的另外的导电层部分的电容来确定外部压力。 还公开了制造这种IC的方法。

公开(公告)号：EP2423157A2

公开(公告)日：2012-02-29

申请号：EP11176316.5

申请日：2011-08-02

Applicant: Freescale Semiconductor, Inc.

Inventor： Lin, Yizhen ,  Schlarmann, Mark E. ,  Desai, Hemant D. ,  Park, Woo Tae

IPC: B81C1/00 ,  G01L9/00 ,  G01L19/06

CPC classification number: B81C1/00309 ,  B81B2201/0264 ,  G01L9/0073 ,  Y10T29/49126

Abstract: A microelectromechanical systems (MEMS) pressure sensor device (20, 62) includes a substrate structure (22, 64) having a cavity (32, 68) formed therein and a substrate structure (24) having a reference element (36) formed therein. A sense element (44) is interposed between the substrate structures (22, 24) and is spaced apart from the reference element (36). The sense element (44) is exposed to an external environment (48) via one of the cavity (68) and a plurality of openings (38) formed in the reference element (36). The sense element (44) is movable relative to the reference element (36) in response to a pressure stimulus (54) from the environment (48). Fabrication methodology (76) entails forming (78) the substrate structure (22, 64) having the cavity (32, 68), fabricating (84) the substrate structure (24) including the sense element (44), coupling (92) the substrate structures, and subsequently forming (96) the reference element (36) in the substrate structure (24).

Abstract translation: 微机电系统（MEMS）压力传感器装置（20,62）包括其中形成有空腔（32,68）的衬底结构（22,64）和具有形成于其中的参考元件（36）的衬底结构（24）。 感测元件（44）插入在基底结构（22,24）之间并且与参考元件（36）间隔开。 感测元件（44）经由空腔（68）和在参考元件（36）中形成的多个开口（38）中的一个暴露于外部环境（48）。 响应于来自环境（48）的压力刺激（54），感测元件（44）可相对于参考元件（36）移动。 制造方法（76）需要形成具有空腔（32,68）的衬底结构（22,64），制造（84）包括感测元件（44）的衬底结构（24），耦合（92） 衬底结构，并且随后在衬底结构（24）中形成（96）参考元件（36）。

公开(公告)号：EP1712515A3

公开(公告)日：2011-09-14

申请号：EP06075741.6

申请日：2006-03-30

Applicant: Delphi Technologies, Inc.

Inventor： Chilcott, Dan W.

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0135 ,  B81C2201/014 ,  B81C2201/017

Abstract: A technique (400) for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer (404), with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling wafer at an opening of the cavity. Then, a bulk etch is performed on the first side of the handling wafer to modify the sidewall of the cavity to a second angle greater than about 90 degrees (406), with respect to the first side of the handling wafer at the opening of the cavity. Next, a second side of a second wafer is bonded to the first side of the handling wafer (408).

公开(公告)号：EP2032501B1

公开(公告)日：2011-06-15

申请号：EP07764841.8

申请日：2007-06-25

Applicant: Universität Bielefeld

Inventor： GÖLZHÄUSER, Armin

IPC: B81C1/00 ,  G01L9/00 ,  H04R19/04

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L9/0042 ,  H04R19/04

Abstract: The invention relates to a method and a device for measuring or detecting and/or generating of pressures or pressure changes, in particular acoustic vibration and a method for production of such a device. The invention particularly relates to a nano-microphone. The device comprises at least one nano-membrane with a support membrane and at least one counter-electrode, the support membrane having at least one monolayer.

公开(公告)号：EP1860417B1

公开(公告)日：2011-05-25

申请号：EP07008470.2

申请日：2007-04-26

Applicant: Sensirion Holding AG

Inventor： Sunier, Robert ,  Streiff, Matthias ,  Mayer, Felix ,  Bühler, Johannes

IPC: G01L19/00 ,  B81B7/02 ,  H01G7/00 ,  G01L9/12 ,  B81B5/00

CPC classification number: G01L9/0073 ,  B81B2201/0264 ,  B81C1/0023 ,  B81C1/00238 ,  B81C2201/019 ,  G01L9/0042 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1452844B1

公开(公告)日：2011-04-06

申请号：EP03029915.0

申请日：2003-12-29

Applicant: ROBERT BOSCH GMBH

Inventor： Lutz, Markus ,  Partridge, Aaron

IPC: G01L9/00 ,  H01L21/00 ,  B81C1/00

CPC classification number: B81C1/00047 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/0177 ,  B81C2203/0145 ,  G01L9/0045 ,  G01L9/0054 ,  G01L9/0073