公开(公告)号：EP1187187A4

公开(公告)日：2004-08-04

申请号：EP00915523

申请日：2000-04-14

申请人： TOKYO ELECTRON LTD ,  NGK INSULATORS LTD

发明人： KAWAKAMI SATORU ,  IWABUCHI KATSUHIKO ,  KUWAJIMA RYO ,  USHIKOSHI RYUSUKE ,  YAMADA NAOHITO ,  KAWAJIRI TETSUYA

IPC分类号： H01L21/302 ,  C23C16/458 ,  C23C16/46 ,  C23C16/511 ,  C23F4/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001

摘要： The temperature control of substrates (W) to be processed is improved in a plasma processing apparatus. A chamber (10) includes a cylindrical ceramic support (26). The upper end of the support (26) is hermetically connected to the back (24b) of a wafer stage (24) by solid-phase welding. The lower end of the support (26) is hermetically connected to the bottom (10b) of the chamber (10) through a lower cooling jacket (90) and O-rings (92, 96). The support (26) defines an atmospheric chamber (38) in which a cooling jacket (40) formed of disklike aluminum blocks is provided. The cooling jacket (40) is mounted on the back (24a) of the wafer stage (24) with a heat-conducting sheet (42).

公开(公告)号：EP1376668A1

公开(公告)日：2004-01-02

申请号：EP02707230.5

申请日：2002-03-28

申请人： TOKYO ELECTRON LIMITED ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  HIRAYAMA, M. DEPT. OF ELECTRONIC ENGIN. GRADUATE ,  SUGAWA, S. DEPT. OF ELECTRONIC ENGIN. GRADUATE ,  GOTO, T. DEPT. OF ELECTRONIC ENGIN. GRADUATE

IPC分类号： H01L21/31 ,  H01L21/205 ,  B01J19/08 ,  C23C16/511 ,  H01L21/265 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32192 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32339

摘要： A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing. In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.

公开(公告)号：EP1100119A4

公开(公告)日：2003-05-07

申请号：EP99957662

申请日：1999-06-28

申请人： TOKYO ELECTRON LTD

发明人： AMANO HIDEAKI

IPC分类号： C23C16/50 ,  C23C16/40 ,  C23C16/511 ,  C23F4/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/3213 ,  H01L21/768

CPC分类号： C23C16/511 ,  C23C16/401 ,  C23C16/402 ,  H01J37/32192 ,  H01J37/3266 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/31629 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76804

摘要： When, for example, a film is formed after preheating, the preheating time is short. The current values passing through a main electromagnetic coil (26) and an auxiliary electromagnetic coil (27) in preheating are made different from those in film forming, so that the shape of the magnetic field produced is varied. In film forming, the uniformity of the magnetic field is high and the magnetic flux density is low; in preheating, the uniformity is low and the magnetic flux density is high. As a result, uniform film forming is possible because a substantially uniform plasma is created over the surface of a wafer (W). Meanwhile, in preheating, although the uniformity is low, a plasma whose density is higher than in film forming is created, and consequently the amount of heat given to the wafer (W) is larger than in film forming, thereby shortening the preheating time.

公开(公告)号：EP1133581A4

公开(公告)日：2002-07-31

申请号：EP97922315

申请日：1997-04-04

申请人： CERAMOPTEC GMBH

发明人： BLINOV LEONID M ,  NEUBERGER WOLFGANG ,  PAVLOV V V

IPC分类号： C03C17/22 ,  C23C16/26 ,  C23C16/511 ,  H01J37/32 ,  C23C16/00 ,  C23C16/54 ,  H05H1/30

CPC分类号： H01J37/32229 ,  C03C17/22 ,  C03C2217/282 ,  C03C2218/153 ,  C23C16/511 ,  H01J37/32284 ,  H01J37/32357

摘要： A method and apparatus for efficiently depositing a dielectric film with a preselected thickness pattern, in particular a homogeneous, uniform diamond or diamond-like film on large area substrates through the use of opposing plasma torches (23) and linearly superimposing of microwave modes within the reaction chamber (26) creating and maintaining an extended linear plasma in close proximity to the substrate surfaces and utilizing laminar flow of the reactant gases in the plasma and over the surfaces. Substrate surfaces can be moved past the opposing torches (23) permitting the coating of large area, rectangularly-shaped substrate surfaces in a simple manner. Alternatively, the plasma horn or horns (23) can be moved across the substrate permitting coating of large area, rectangularly-shaped substrate surfaces.

公开(公告)号：EP0840551A4

公开(公告)日：2000-11-29

申请号：EP96912599

申请日：1996-04-08

申请人： ENERGY CONVERSION DEVICES INC

发明人： IZU MASATSUGU ,  DOTTER BUDDIE R II

IPC分类号： B65D65/42 ,  C23C16/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32 ,  A22C13/00 ,  B29D22/00 ,  B29D23/00

CPC分类号： B65D65/42 ,  C23C16/0209 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3277 ,  Y10T428/1324 ,  Y10T428/1334 ,  Y10T428/1338 ,  Y10T428/1345 ,  Y10T428/1352 ,  Y10T428/1355 ,  Y10T428/1397 ,  Y10T428/265 ,  Y10T428/31667

摘要： A method for depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si-H bonds. The barrier coating is deposited by the instant method on a temperature sensitive substrate.

公开(公告)号：EP0659910A3

公开(公告)日：1998-10-21

申请号：EP94118223

申请日：1994-11-18

申请人： MEGA CHIPS CORP

发明人： SHIINDO MASAHIRO ,  KOSAKA DAISUKE ,  HIKAWA TETSUO ,  TAKATA AKIRA ,  UKAI YUKIHIRO ,  SAWADA TAKASHI ,  ASAKAWA TOSHIFUMI

IPC分类号： B81B3/00 ,  C23C16/48 ,  C23C16/511 ,  C23C16/56 ,  G01L9/00 ,  G01P15/08 ,  H01H59/00 ,  H01J37/32 ,  H01L27/12 ,  H01L31/0376 ,  H01L31/078 ,  H01L31/18 ,  H02N1/00 ,  C30B25/00

CPC分类号： H01J37/32678 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/0038 ,  B81C2201/0109 ,  C23C16/48 ,  C23C16/486 ,  C23C16/511 ,  C23C16/56 ,  G01L9/0042 ,  G01P15/0802 ,  G02F2001/136281 ,  H01H59/0009 ,  H01L27/12 ,  H01L27/1203 ,  H01L31/03762 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/186 ,  H02N1/002 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

摘要翻译： 为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104） 从多个规定方向照射Ne原子电流，使得最上层（1104）的晶体取向被转换成使得（111）面向上指向的取向。 采用掩模构件（106）作为屏蔽构件，以从其底面各向异性地蚀刻衬底（1102），由此形成V形槽（1112）。 此时，最上层（1104）用作蚀刻停止件。 因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。 具有复合构件的微机械，例如由单晶材料制成的图可以容易地通过无接合制造。

公开(公告)号：EP0708688A4

公开(公告)日：1998-03-04

申请号：EP94916590

申请日：1994-04-29

申请人： ENERGY CONVERSION DEVICES INC

发明人： OVSHINSKY STANFORD R ,  TSU DAVID V ,  YOUNG ROSA

IPC分类号： C23C16/511 ,  C23C16/517 ,  H01J37/32 ,  B05D3/00 ,  B05D3/06 ,  B05D3/14

CPC分类号： H01J37/32211 ,  C23C16/511 ,  C23C16/517 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32678 ,  H01J2237/3321

摘要： An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate (24) inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source (4) thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate (24) or precursor gas; and depositing a thin film of material onto the substrate (24).

摘要翻译： 用于高质量薄膜材料的高速低温沉积的改进的化学气相沉积方法。 该方法包括提供其中限定有等离子体沉积区域的真空室; 将衬底放置在腔室内; 将等离子体沉积前体气体供应到所述抽真空室中的沉积区域; 将微波能量从其源引导到沉积区域，所述微波能量与沉积前体气体相互作用以形成电子，离子和活化的电中性物质的等离子体，所述等离子体包括一种或多种沉积物质; 通过将额外的非微波电子能量和磁能耦合到等离子体中来增加等离子体中的沉积物质的表面迁移率，而不用有意地向基底或前体气体添加热能; 以及在衬底上沉积材料薄膜。

公开(公告)号：EP0667921A4

公开(公告)日：1997-12-29

申请号：EP94901375

申请日：1993-11-10

申请人： ENERGY CONVERSION DEVICES INC

发明人： IZU MASATSUGU ,  DOTTER BUDDIE R II ,  OVSHINSKY STANFORD R ,  HASEGAWA WATARU

IPC分类号： C23C16/42 ,  B65D65/42 ,  C23C16/02 ,  C23C16/40 ,  C23C16/50 ,  C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H05H1/46 ,  B05D1/04 ,  B05D3/06 ,  B29D22/00 ,  B29D23/00 ,  B65D23/02

CPC分类号： H01J37/32211 ,  B65D65/42 ,  C23C16/0209 ,  C23C16/0245 ,  C23C16/401 ,  C23C16/402 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/3277

摘要： Method and apparatus for the simultaneous plasma assisted chemical vapor deposition of thin film material onto an elongated web of substrate material at a plurality of discrete spatially separated deposition zones (12). In order to accomplish said simultaneous deposition, the web of substrate material (10) is operatively positioned so as to assume a serpentine path of travel through a reduced pressure enclosure (1). By using an elongated linear applicator (4) as a source of microwave energy, a high rate of uniform deposition of said thin film material over a plurality of large areas of the web substrate material can be simultaneously achieved without heating of said web above the melting point thereof. In a preferred embodiment, the web of substrate material is formed of a low temperature, microwave transmissive synthetic plastic resin and the thin film material deposited thereupon forms a barrier coating for preventing oxygen diffusion therethrough.

公开(公告)号：EP0616729A4

公开(公告)日：1994-11-30

申请号：EP93900605

申请日：1992-11-23

申请人： UNITED SOLAR SYSTEMS CORP

发明人： GUHA SUBHENDU ,  BANERJEE ARINDAM ,  YANG CHI C

IPC分类号： C23C16/511 ,  H01J37/32 ,  H01L31/075 ,  H01L31/20 ,  H01L31/18 ,  H01L21/205

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32697 ,  H01J2237/332 ,  H01L31/075 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： Open circuit voltage of photovoltaic devices manufactured by a microwave deposition process is increased by disposing a bias wire in the microwave energized plasma and applying a positive voltage of approximately 100 volts to the wire during only a portion of the time in which the intrinsic semiconductor layer (12a, 12b) is being deposited.

摘要翻译： 通过在微波通电等离子体中布置偏压线并且在仅仅一部分时间内向导线施加大约100伏的正电压来增加通过微波沉积过程制造的光伏器件的开路电压， 12a，12b）正被沉积。

公开(公告)号：EP0311696A4

公开(公告)日：1989-11-27

申请号：EP88903398

申请日：1988-04-25

申请人： NIPPON TELEGRAPH & TELEPHONE

发明人： MATSUO SEITARO ,  NISHIMURA HIROSHI ,  KIUCHI MIKIHO

IPC分类号： H01L21/205 ,  C23C16/511 ,  H01J27/18 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32357 ,  C23C16/511 ,  H01J27/18

摘要： An apparatus for processing with plasma wherein a gas is introduced into a plasma forming chamber (20) through a gas introduction pipe (22), input microwave from a microwave source (31) is supplied to the plasma forming chamber (20), and the gas introduced is converted into a plasma by electron cyclotron resonance. The input microwave in TE mode from a microwave source (31) is received by a tapered waveguide (60) which accomodates a dielectric board (63), and at least part of the input microwave is converted into a microwave portion in EH mode having an electric field component in the traveling direction of the input microwave. A hybrid-mode microwave containing the waves in these two modes is guided into the plasma forming chamber (20) via a microwave introduction window (27). Since the plasma forming chamber (20) receives the hybrid-mode wave of a propagation mode having an electric field component toward the traveling direction, i.e., having a longitudinal component, the microwave energy is efficiently supplied to the plasma region that satisfies the ECR condition, and absorbed in the plasma. Therefore, the plasma forming efficiency increases and the throughput of processing with plasma increases, too.

摘要翻译： 一种等离子体处理装置，其特征在于，通过气体导入管（22）将气体导入等离子体形成室（20），将来自微波源（31）的输入微波供给等离子体形成室（20） 通过电子回旋共振将引入的气体转化为等离子体。 来自微波源（31）的TE模式输入微波由容纳介电板（63）的锥形波导（60）接收，并且至少部分输入微波被转换成EH模式的微波部分，该微波部分具有 输入微波行进方向的电场分量。 在这两种模式中包含波的混合模式微波通过微波引入窗口（27）被引导到等离子体形成室（20）中。 由于等离子体形成室20接收具有朝向行进方向的电场分量，即具有纵向分量的传播模式的混合模式波，所以微波能量被有效地提供给满足ECR条件的等离子体区域 ，并吸收在血浆中。 因此，等离子体形成效率提高并且等离子体处理的处理量也增加。