公开(公告)号：EP2765612A4

公开(公告)日：2015-07-22

申请号：EP12829607

申请日：2012-09-07

申请人： TAMURA SEISAKUSHO KK ,  NAT INST INF & COMM TECH

发明人： SASAKI KOHEI ,  HIGASHIWAKI MASATAKA

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L29/24 ,  H01L29/26 ,  H01L29/772 ,  H01L29/78 ,  H01L29/812

CPC分类号： H01L29/7869 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045 ,  H01L29/157 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/772 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/78603 ,  H01L29/812 ,  H01L29/8126

公开(公告)号：EP2786415A4

公开(公告)日：2015-07-08

申请号：EP12852639

申请日：2012-11-28

申请人： RICOH CO LTD

发明人： ABE YUKIKO ,  UEDA NAOYUKI ,  NAKAMURA YUKI ,  TAKADA MIKIKO ,  MATSUMOTO SHINJI ,  SONE YUJI ,  SAOTOME RYOICHI

IPC分类号： H01L21/368 ,  C01G19/00 ,  C01G30/00 ,  H01L21/336 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/861 ,  H01L29/868

CPC分类号： H01L29/247 ,  C01G19/00 ,  C01G30/00 ,  C01P2002/72 ,  G02F1/1368 ,  H01L21/02422 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3244 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/861

公开(公告)号：EP2669950B1

公开(公告)日：2015-07-08

申请号：EP13169986.0

申请日：2013-05-31

申请人： Samsung Corning Advanced Glass, LLC

发明人： Ha, Jinjoo ,  Lee, Seungju ,  Oh, Joo Hye ,  Cho, Johann ,  Park, Ju Ok ,  Sohn, In Sung ,  Lee, Hyungrok ,  Han, Jin Woo

IPC分类号： H01L29/66 ,  H01L29/786 ,  C23C14/34 ,  H01L21/02 ,  H01L29/24

CPC分类号： H01L29/24 ,  C23C14/3414 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

公开(公告)号：EP2765610A4

公开(公告)日：2015-05-06

申请号：EP12830340

申请日：2012-09-07

申请人： TAMURA SEISAKUSHO KK ,  NAT INST INF & COMM TECH

发明人： SASAKI KOHEI ,  HIGASHIWAKI MASATAKA

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/336 ,  H01L29/04 ,  H01L29/24 ,  H01L29/36

CPC分类号： H01L29/24 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02634 ,  H01L29/045 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7827

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga 2 O 3 semiconductor element (20), which includes: an n-type ²-Ga 2 O 3 substrate (2); a ²-Ga 2 O 3 single crystal film (3), which is formed on the n-type ²-Ga 2 O 3 substrate (2); source electrodes (22a, 22b), which are formed on the ²-Ga 2 O 3 single crystal film (3); a drain electrode (25), which is formed on the n-type ²-Ga 2 O 3 substrate (2) surface on the reverse side of the ²-Ga 2 O 3 single crystal film (3); n-type contact regions (23a, 23b), which are formed in the ²-Ga 2 O 3 single crystal film (3), and have the source electrodes (22a, 22b) connected thereto, respectively; and a gate electrode (21), which is formed on the ²-Ga 2 O 3 single crystal film (3) with the gate insulating film (26) therebetween.

公开(公告)号：EP2755231A4

公开(公告)日：2015-04-08

申请号：EP12829259

申请日：2012-08-02

申请人： TAMURA SEISAKUSHO KK

发明人： SASAKI KOHEI

IPC分类号： H01L21/425 ,  H01L29/24

CPC分类号： H01L29/24 ,  H01L21/425 ,  H01L29/0692 ,  H01L29/36

摘要： A method for controlling the concentration of a donor in a Ga 2 O 3 -based single crystal using the ion implantation process is provided with which it is possible to form a highly electrically conductive region in a Ga 2 O 3 -based single crystal. The method comprises: a step in which a Group IV element is implanted as a donor impurity in a Ga 2 O 3 -based single crystal (1) by the ion implantation process to form, in the Ga 2 O 3 -based single crystal (1), a donor impurity implantation region (3) that has a higher concentration of the Group IV element than the region in which the Group IV element has not been implanted; and a step in which annealing at 800 C or higher is conducted to activate the Group IV element present in the donor impurity implantation region (3) and thereby form a high-donor-concentration region. Thus, the donor concentration in the Ga 2 O 3 -based single crystal (1) is controlled.

公开(公告)号：EP1915773B1

公开(公告)日：2015-01-28

申请号：EP06767742.7

申请日：2006-06-26

申请人： Nissan Motor Company Limited

发明人： YAMAGAMI, Shigeharu ,  HOSHI, Masakatsu ,  HAYASHI, Tetsuya ,  TANAKA, HIDEAKI ,  SHIMOIDA, Yoshio

IPC分类号： H01L21/18 ,  H01L29/78 ,  H01L29/24 ,  H01L29/267 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L29/1608 ,  H01L29/267 ,  H01L29/66068 ,  H01L29/7827

公开(公告)号：EP2801113A2

公开(公告)日：2014-11-12

申请号：EP13701815.6

申请日：2013-01-03

申请人： TOTAL MARKETING SERVICES ,  Centre National de la Recherche Scientifique (CNRS) ,  Ecole Polytechnique

发明人： YU, Linwei ,  ROCA I CABARROCAS, Pere

IPC分类号： H01L29/06 ,  H01L21/365 ,  H01L31/0352 ,  H01L31/042 ,  H01L31/075 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/16 ,  H01L29/161 ,  H01L29/24 ,  C30B9/10 ,  C30B29/06 ,  C30B29/52 ,  C30B29/60 ,  H01L29/786 ,  C30B29/08 ,  H01L21/02

CPC分类号： H01L31/182 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/16 ,  H01L29/161 ,  H01L29/167 ,  H01L29/24 ,  H01L31/035227 ,  H01L31/035272 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention relates to a method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate (2), including the steps of: a) forming metal aggregates (2) on said substrate (2), said metal aggregates being capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires (1) in the presence of one or more non-dopant precursor gases of said first semiconductor material, the substrate (2) being heated to a temperature at which said metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires (1) in the vapor phase being catalyzed by said metal aggregates (3); c) rendering the residual metal aggregates (3) inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between said nanowire and said at least one doped thin film. The invention also relates to a solar cell including a plurality of radial electronic junction nanostructures produced according to the invention.

公开(公告)号：EP2560210A1

公开(公告)日：2013-02-20

申请号：EP12192234.8

申请日：2004-09-21

申请人： Nissan Motor Co., Ltd.

发明人： Hayashi, Tetsuya ,  Tanaka, Hideaki ,  Hoshi, Masakatsu ,  Kaneko, Saichirou

IPC分类号： H01L29/78 ,  H01L29/267 ,  H01L29/24 ,  H01L21/04

CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/7828

摘要： An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which forms heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, the gate insulating film made of a layer deposited inside a trench formed by selecitve oxidation and oxide removal, a gate electrode in contact with the gate insulating film, a source electrode in contact with the source region, and a drain region in contact with the semiconductor body.

摘要翻译： 本发明的一个方面提供了一种半导体器件，该半导体器件包括：第一导电类型半导体主体;与半导体主体接触的源极区，其与半导体主体的带隙不同，并且与半导体主体形成异质结; 栅极绝缘膜，与源极区域和半导体本体之间的结的一部分接触，栅极绝缘膜由沉积在通过选择性氧化和氧化物去除形成的沟槽内的层形成;栅极，与栅极绝缘膜接触; 与源极区接触的源极以及与半导体主体接触的漏极区。

公开(公告)号：EP0958610B1

公开(公告)日：2012-11-14

申请号：EP97932077.7

申请日：1997-06-25

申请人： CREE, INC.

发明人： BAKOWSKI, Mietek ,  BLEICHNER, Harry ,  GUSTAVSSON, Ulf

IPC分类号： H01L29/24 ,  H01L29/70 ,  H01L21/20

CPC分类号： H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7395

公开(公告)号：EP1933386B1

公开(公告)日：2012-11-07

申请号：EP06797281.0

申请日：2006-09-01

申请人： Central Research Institute of Electric Power Industry

发明人： MIYANAGI, Toshiyuki ,  TSUCHIDA, Hidekazu ,  KAMATA, Isaho ,  NAGANO, Masahiro ,  SUGAWARA, Yoshitaka ,  NAKAYAMA, Koji ,  ISHII, Ryosuke

IPC分类号： H01L29/861 ,  H01L21/329 ,  H01L21/18 ,  H01L29/24

CPC分类号： H01L29/66068 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/861