公开(公告)号：EP1119053B1

公开(公告)日：2011-11-02

申请号：EP01200990.8

申请日：1994-02-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yamazaki, Shunpei ,  Takemura, Yasuhiko ,  Zhang, Hongyong ,  Takayama, Toru ,  Uochi, Hideki

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/336

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78696

摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

公开(公告)号：EP1207549A3

公开(公告)日：2010-07-07

申请号：EP01124710.3

申请日：1994-02-02

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Takayama, Toru ,  Zhang, Hongyong ,  Yamazaki, Shunpei ,  Takemura, Yasuhiko

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L27/12 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78654 ,  H01L29/78675

摘要： A method of manufacturing a semiconductor device including a thin film transistor, said method comprising the steps of forming an amorphous semiconductor film on an insulating surface; providing a material being capable of promoting the amorphous semiconductor film into the amorphous semiconductor film; crystallizing the amorphous semiconductor film by heating to form a crystalline semiconductor film; forming a gate insulating film in contact with the crystalline semiconductor film; forming a gate electrode adjacent to the crystalline semiconductor film with the gate insulating film therebetween; providing an impurity into the crystalline semiconductor film to a source region, a drain channel and a channel region between the source and drain regions of the thin film transistor.

公开(公告)号：EP1401032A3

公开(公告)日：2007-06-13

申请号：EP03021328.4

申请日：2003-09-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Tsurume, Takuya ,  Goto, Yuugo

IPC分类号： H01L51/20

CPC分类号： H01L51/529 ,  H01L27/3244 ,  H01L51/5246 ,  H01L51/5253

摘要： The present invention is to solve the problems of heat release and a metal material corrosion due to fluorine that are arisen in the case of using a film containing fluoroplastics (Teflon®) (113) as a protective film for a light-emitting device. In the present invention, an inorganic film (112) is formed after forming a light-emitting device, and a film containing fluoroplastics (113) is formed thereon for avoiding contact with a metal material for forming the light-emitting device, as a result, a metal material corrosion due to fluorine in the film containing fluoroplastics can be prevented. In addition, the inorganic insulating film has a function of preventing fluorine in the film containing fluoroplastics from reacting to the metal material (barrier property), in addition, the inorganic insulating film is formed of a material having high heat conductivity for releasing heat generated in a light-emitting device.

摘要翻译： 本发明解决了使用含有氟树脂（Teflon）（113）的膜作为发光装置用保护膜的情况下产生的由于氟引起的放热和金属材料腐蚀的问题。 在本发明中，在形成发光器件之后形成无机膜（112），并且在其上形成包含氟塑料（113）的膜以避免与用于形成发光器件的金属材料接触，结果 可以防止含氟塑料膜中由于氟引起的金属材料腐蚀。 此外，无机绝缘膜具有防止含氟树脂膜中的氟与金属材料反应的功能（阻挡性），另外，无机绝缘膜由具有高热导率的材料形成，以释放在 一个发光装置。

公开(公告)号：EP1434262A3

公开(公告)日：2006-09-20

申请号：EP03029012.6

申请日：2003-12-16

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Kuwabara, Hideaki ,  Maruyama, Junya ,  Ohno, Yumiko ,  Takayama, Toru ,  Goto, Yuugo ,  Arakawa, Etsuko ,  Yamazaki, Shunpei

IPC分类号： H01L21/68 ,  H01L21/20

CPC分类号： H01L21/6835 ,  H01L21/563 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L29/0657 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01014 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term "an integrated circuit film" means a film-like integrated circuit (750) which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.

摘要翻译： 本发明的目的是提供一种用于使半导体器件更薄而不使用用于硅晶片的后磨法的技术。 根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。 术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路（750）。 在本发明中，通过转印技术制造集成电路膜。

公开(公告)号：EP1383165A3

公开(公告)日：2005-09-07

申请号：EP03015816.6

申请日：2003-07-10

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Takayama, Toru ,  Maruyama, Junya ,  Goto, Yuugo ,  Ohno, Yumiko ,  Tsurume, Takuya ,  Kuwabara, Hideaki

IPC分类号： H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/84 ,  H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410°C or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

公开(公告)号：EP1453086A2

公开(公告)日：2004-09-01

申请号：EP04004369.7

申请日：2004-02-26

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Imai, Keitaro ,  Takayama, Toru ,  Goto, Yuugo ,  Maruyama, Junya ,  Ohno, Yumiko

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2221/6835 ,  H01L2221/68368

摘要： To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.

摘要翻译： 为了提供一种制造半导体器件的方法，该半导体器件包括转印步骤，该转印步骤能够在分离包含半导体元件或在其上形成的集成电路的元件形成层的情况下控制衬底和元件形成层的粘附性 衬底并将其粘合到另一衬底上。 在半导体元件或包括形成在基板（第一基板）和基板之上的多个半导体元件的集成电路之间）形成由良好的粘附性材料制成的粘合剂，因此可以防止半导体元件剥离 制造半导体元件的基板，进一步通过在形成半导体元件之后去除粘合剂，更容易将半导体元件与基板分离。

公开(公告)号：EP1434264A2

公开(公告)日：2004-06-30

申请号：EP03029476.3

申请日：2003-12-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Kuwabara, Hideaki ,  Takayama, Toru ,  Goto, Yuugo ,  Maruyama, Junya ,  Ohno, Yumiko ,  Yamazaki, Shunpei

IPC分类号： H01L21/68

CPC分类号： H01L25/50 ,  H01L21/2007 ,  H01L21/76251 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83001 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06558 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2224/45099

摘要： A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.

摘要翻译： 提供了一种用于制造低成本，小体积和高度集成的半导体器件的技术。 本发明的特征在于，通过使用半导体薄膜形成的半导体元件通过转印技术通过使用半导体衬底形成的半导体元件被转印，以制造半导体器件。 与以往的制造方法相比，能够实现成本低，生产量高的半导体装置的大量生产，能够降低半导体装置的生产成本。

公开(公告)号：EP1432032A2

公开(公告)日：2004-06-23

申请号：EP03029014.2

申请日：2003-12-16

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Maruyama, Junya ,  Ohno, Yumiko

IPC分类号： H01L25/065 ,  H01L21/98 ,  H01L21/68

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83205 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/83851 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01003 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599

摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer (501) with a thickness of at most 50µm which is separated from a substrate (322) into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50µm which is separated from another substrate to the above device formative layers, and, repeating such transferring process.

摘要翻译： 通过转印技术提供具有形成为集成薄膜的多个器件形成层的半导体芯片。 根据本发明，通过将从衬底（322）分离的至多50μm的厚度的器件形成层（501）传送到与衬底（322）分离的器件形成层（501），可以制造形成为薄膜并且高度集成的半导体芯片 通过用于转移和转移厚度至多为50μm的另一个器件形成层的技术的另一衬底，其从另一个衬底分离到上述器件形成层，并且重复这种转移过程。

公开(公告)号：EP1432022A2

公开(公告)日：2004-06-23

申请号：EP03028233.9

申请日：2003-12-09

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Maruyama, Junya ,  Ohno, Yumiko ,  Tanaka, Koichiro

IPC分类号： H01L21/68

CPC分类号： H01L21/02667 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/54473 ,  H01L2224/1134 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92247 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512

摘要： According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500µm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5µm, preferably at most 2µm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.

摘要翻译： 根据本发明的封装和封装的制造方法，芯片可以形成得非常薄，制造成本低，生产量高，可以减少芯片厚度的变化，而不会造成背面磨损 裂纹或抛光痕迹。 在本发明中，沉积在用作支撑介质的基板上的厚度最大为500μm的半导体膜用CW激光结晶，并且具有半导体器件的芯片形成为总厚度为5μm，优选地 通过使用结晶的半导体膜至多2μm。 因此，在分离衬底之后将芯片安装在插入器上。

公开(公告)号：EP1401032A2

公开(公告)日：2004-03-24

申请号：EP03021328.4

申请日：2003-09-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Takayama, Toru ,  Tsurume, Takuya ,  Goto, Yuugo

IPC分类号： H01L51/20

CPC分类号： H01L51/529 ,  H01L27/3244 ,  H01L51/5246 ,  H01L51/5253

摘要： The present invention is to solve the problems of heat release and a metal material corrosion due to fluorine that are arisen in the case of using a film containing fluoroplastics (Teflon®) as a protective film for a light-emitting device. In the present invention, an inorganic film is formed after forming a light-emitting device, and a film containing fluoroplastics is formed thereon for avoiding contact with a metal material for forming the light-emitting device, as a result, a metal material corrosion due to fluorine in the film containing fluoroplastics can be prevented. In addition, the inorganic insulating film has a function of preventing fluorine in the film containing fluoroplastics from reacting to the metal material (barrier property), in addition, the inorganic insulating film is formed of a material having high heat conductivity for releasing heat generated in a light-emitting device.

摘要翻译： 本发明是为了解决在使用含有氟树脂的膜作为发光装置用保护膜的情况下产生的由于氟引起的放热和金属材料腐蚀的问题。 在本发明中，在形成发光器件之后形成无机膜，并且在其上形成包含氟塑料的膜以避免与用于形成发光器件的金属材料接触，结果，由于金属材料腐蚀 可以防止含氟树脂的膜中的氟。 此外，无机绝缘膜具有防止含氟树脂膜中的氟与金属材料反应的功能（阻挡性），另外，无机绝缘膜由具有高热导率的材料形成，以释放在 一个发光装置。