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    LOW PRESSURE SENSOR AND FLOW SENSOR
    84.
    发明公开
    LOW PRESSURE SENSOR AND FLOW SENSOR 审中-公开
    NIEDERDRUCKSENSOR UND FLUSSSENSOR

    公开(公告)号：EP3095754A1

    公开(公告)日：2016-11-23

    申请号：EP16169090.4

    申请日：2016-05-11

    Applicant: Amphenol Thermometrics, Inc.

    Inventor： Belov, Nickolas S. ,  Li, Lihua ,  Vu, Kim ,  Vu, Dinh

    IPC: B81B3/00

    CPC classification number: G01L19/147 ,  B81B3/0021 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0109 ,  G01L9/0047 ,  G01L9/0048 ,  G01L19/0618

    Abstract: A device/method for sensing a physical parameter, including a sensor die and a stress-sensitive circuit. The sensor die includes a semiconductor substrate and a cavity that creates an elastic element that bends in response to the physical parameter exerted on the sensor die. The elastic element includes at least at least one rigid island formed within the cavity, a thin area surrounding the at least one rigid island and having smaller thickness than the rigid island, and at least one stress concentrator at least partially formed in the thin area of the elastic element on the side of the substrate opposite the cavity. The stress-sensitive circuit includes at least one stress-sensitive component formed in the thin area of the elastic element. The at least one stress concentrator increases stress in the locations of the at least one stress-sensitive component resulting in an increase of the device sensitivity to the physical parameter.

    Abstract translation: 一种用于感测物理参数的装置/方法，包括传感器管芯和应力敏感电路。 传感器管芯包括半导体衬底和空腔，其产生响应于施加在传感器管芯上的物理参数而弯曲的弹性元件。 所述弹性元件包括形成在所述空腔内的至少一个刚性岛，围绕所述至少一个刚性岛的薄区，并且具有比所述刚性岛更小的厚度，以及至少部分地形成在所述刚性岛的薄区域中的至少一个应力集中器 衬底侧的弹性元件与空腔相对。 应力敏感电路包括形成在弹性元件的薄区域中的至少一个应力敏感元件。 所述至少一个应力集中器增加所述至少一个应力敏感部件的位置的应力，从而导致对所述物理参数的装置灵敏度的增加。

    THIN CAPPING FOR MEMS DEVICES
    86.
    发明公开
    THIN CAPPING FOR MEMS DEVICES 审中-公开
    DÜNNERVERSCHLUSSFÜRMEMS-VORRICHTUNGEN

    公开(公告)号：EP3038974A1

    公开(公告)日：2016-07-06

    申请号：EP14839979.3

    申请日：2014-08-26

    Applicant: Silex Microsystems AB

    Inventor： KÄLVESTEN, Edvard ,  EBEFORS, Thorbjörn ,  SVEDIN, Niklas

    IPC: B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/48

    CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

    Abstract: The invention relates to a device comprising a base substrate(700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from said component (702). It also comprises spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via said spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) comprises vias (710) comprising metal for providing electrical connection through said capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

    Abstract translation: 一种装置包括具有附接到其上的微组件（702）的基底（700）。 适当地，它设置有用于向组件（702）传导信号和从组件（702）传出信号的路由元件（704）。 它还包括间隔件（706），其也可以用作垂直路线信号的导电结构。 存在玻璃材料的覆盖结构（708），其设置在基底基板（700）上方，优选地通过共晶接合通过间隔件（706）接合，其中封盖结构（708）包括通孔（710），包括金属 用于通过封盖结构提供电连接。 通孔可以通过加压的冲压/压制方法制成，以使玻璃软化并施加压力至玻璃中的预定深度。 然而，其他方法是可能的，例如钻孔，蚀刻，爆破。

    AN IMPROVED PRESSURE SENSOR STRUCTURE
    89.
    发明公开
    AN IMPROVED PRESSURE SENSOR STRUCTURE 有权
    改进的压力调节器传感器结构

    公开(公告)号：EP3004830A1

    公开(公告)日：2016-04-13

    申请号：EP14731387.8

    申请日：2014-06-04

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： KUISMA, Heikki

    IPC: G01L19/06 ,  B81B3/00

    CPC classification number: G01L9/12 ,  B81B3/0086 ,  B81B2201/0264 ,  G01L9/0072 ,  G01L13/00 ,  G01L19/0654

    Abstract: A microelectromechanical pressure sensor structure that comprises a planar base and side walls and a diaphragm plate. The side walls extend circumferentially away from the planar base to a top surface of the side walls. The planar base, the side walls and the diaphragm plate are attached to each other to form a hermetically closed gap in a reference pressure, and a top edge of the inner surfaces of the side walls forms a periphery of a diaphragm. The diaphragm plate comprises one or more planar material layers of which a first planar material layer spans over the periphery of the diaphragm. The top surface of the side walls comprises at least one isolation area that is not covered by the first planar material layer.

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