SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明公开
    SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    HALBLEITERSPEICHERBAUSTEIN UND VERFAHREN ZU SEINER HERSTELLUNG

    公开(公告)号:EP1811562A4

    公开(公告)日:2008-11-19

    申请号:EP05787588

    申请日:2005-09-30

    摘要: [PROBLEMS] To provide a semiconductor storage device having excellent electrical characteristics (writing/erasing characteristics) by excellent nitrogen concentration profile of a gate insulating film and to provide a method for manufacturing such device. [MEANS FOR SOLVING PROBLEMS] In a semiconductor device manufacturing method relating to a first embodiment of this invention, a method for manufacturing a semiconductor storage device which operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode includes a process of introducing oxynitriding species previously diluted by using a gas for plasma excitation into a plasma processing apparatus, generating the oxynitriding species by plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contain an NO gas of 0.00001-0.01% to the total gas quantity introduced into the plasma processing apparatus.

    摘要翻译: 本发明提供一种通过栅极绝缘膜的优异的氮浓度分布而具有优异的电特性(写入/擦除特性)的半导体存储装置,并提供用于制造该装置的方法。 用于解决问题的手段本发明的第一实施方式涉及的半导体装置的制造方法中,通过在半导体基板与栅电极之间形成的栅极绝缘膜转移电荷而工作的半导体存储装置的制造方法包括: 将通过使用用于等离子体激发的气体预先稀释的氮氧化物种引入到等离子体处理设备中,通过等离子体产生氮氧化物种,以及在作为栅极绝缘膜的半导体基板上形成氧氮化物膜。 对于导入等离子体处理装置的总气体量,氮氧化物质含有0.00001-0.01%的NO气体。