摘要:
A stage member having a high resistance and resonance frequency against torsional oscillation is provided. The stage member has a honeycomb structure wherein a square pole shaped space part is provided and a wall constituting the space part is arranged vertical to a torsional deformation direction. Exposure equipment including such stage member is also provided. The honeycomb structure of the stage member is desirably constituted of ceramics.
摘要:
A composite ceramic material with a honeycomb structure which is composed by adding glass into silicon carbide is used for a mask stage (2) and a substrate stage (12) in a exposure apparatus (100) for liquid crystal panels.
摘要:
[PROBLEMS] To provide a semiconductor storage device having excellent electrical characteristics (writing/erasing characteristics) by excellent nitrogen concentration profile of a gate insulating film and to provide a method for manufacturing such device. [MEANS FOR SOLVING PROBLEMS] In a semiconductor device manufacturing method relating to a first embodiment of this invention, a method for manufacturing a semiconductor storage device which operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode includes a process of introducing oxynitriding species previously diluted by using a gas for plasma excitation into a plasma processing apparatus, generating the oxynitriding species by plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contain an NO gas of 0.00001-0.01% to the total gas quantity introduced into the plasma processing apparatus.