摘要:
A method for bonding a first copper element onto a second copper element including forming a crystalline copper layer enriched in oxygen on each of surfaces of each of the first and second elements through which the elements will be in contact, the total thickness of both layers being less than 6 nm, which includes: a) polishing the surfaces so as to obtain a roughness of less than 1 nm RMS, and hydrophilic surfaces, b) cleaning the surfaces to suppress presence of particles due to the polishing and the major portion of corrosion inhibitors, and c) putting both crystalline copper layer enriched in oxygen in contact with each other.
摘要:
The invention relates to a method for the direct bonding of an electronic chip (100) onto a substrate (102) or another electronic chip, said method comprising the steps of: carrying out a hydrophilic treatment of a portion (105) of a surface of the electronic chip and of a portion (110) of a surface (108) of the substrate or of the other electronic chip; depositing an aqueous fluid (112) on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip; said method also comprises, during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.
摘要:
Procédé de réalisation d'un ou plusieurs éléments de connexion dépassant en face arrière (F2) d'un support et connectés respectivement à un ou plusieurs plots conducteurs disposés en face avant (F1) du support, la face avant étant opposée à la face arrière, le procédé comprenant des étapes consistant à : a) former une couche conductrice sur le support, la couche conductrice étant agencée de sorte qu'elle comporte une première portion conductrice en contact avec au moins un plot conducteur disposé sur la face avant, la première portion conductrice s'étendant sur la face avant et étant reliée à au moins une deuxième portion conductrice s'étendant contre au moins une paroi donnée du support, la paroi étant située entre la face avant et la face arrière et réalisant un angle non-nul avec la face avant du support, b) amincir le support au niveau de sa face arrière de sorte à libérer du support une extrémité (15a) de la deuxième portion conductrice, cette extrémité conductrice libre dépassant de la face arrière du support.
摘要:
A semiconductor device having a first semiconductor die (124c,170,198,124b) with a protection circuit (150) and a second semiconductor die (124b, 124,206,124a) with a protection circuit (150) is disposed over the first semiconductor die; where the protection circuits on each semiconductor die are coupled in parallel. The die are stacked and electrically connected in parallel between leadframe (160) first terminal(160a) and second terminal (160b) through an interconnect structure (134a,140a,140b). An encapsulant (162) is deposited around the first semiconductor die, second semiconductor die, and leadframe. Electrical current from an ESD event is routed through each semiconductor die in parallel to a ground voltage node and the semiconductor packages are thus isolated from an ESD event. At least two semiconductor die with protection circuits may be stacked to increase the ESD current discharge capability.
摘要:
A method of manufacturing an electrical device that is electrically and mechanically connectable to another electrical device, the electrical device having a face equipped with contact pads, the method being characterised in that it includes:- a layer-application step in which an adhesive layer is applied on the face equipped with contact pads, the adhesive layer being composed of a substance with adhesive properties; - an opening-creation step in which an opening is created through the adhesive layer at the level of a contact pad; - an opening-filing step in which the opening is filled with a conductive material so that the opening is substantially filled with the conductive material so as to form a conductive path the volume of which is defined by the opening.