公开(公告)号：EP1970422B1

公开(公告)日：2011-11-02

申请号：EP07291507.7

申请日：2007-12-12

申请人： Toray Advanced Materials Korea Inc.

发明人： Sim, Chang-Hoon ,  Jun, Hae-Sang ,  Moon, Ki-Jeong ,  Lee, Jun-Ho ,  Park, Yun-Min

IPC分类号： C09J7/00 ,  H01L25/065

CPC分类号： H01L24/83 ,  C09J7/10 ,  C09J2201/36 ,  C09J2461/00 ,  C09J2463/00 ,  H01L25/0657 ,  H01L2224/26135 ,  H01L2224/29083 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/351 ,  Y10T428/24975 ,  Y10T428/28 ,  Y10T428/2848 ,  Y10T428/2852 ,  Y10T428/287 ,  Y10T428/31511 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention concerns an adhesive film for stacking chips which enables chips to be stacked in layers without using a separate spacer usually provided to keep a given distance between wires of an upper chip and a lower chip to have the same area. The adhesive film of the invention has an intermediate adhesive layer of thermoplastic phenoxy resin on both side of which a thermosetting adhesive layer of epoxy resin is placed, respectively, to make a three-layer structure, the thermoplastic phenoxy resin comprising UV curable small molecule compounds. The adhesive film of the invention is a multi-layered adhesive film produced by a method of comprising the steps of achieving compatibility on an interface between the thermosetting epoxy resin and thermoplastic phenoxy resin and then directly forming a phenoxy film of a high elastic modulus through UV curing in an adhesive film. With such a configuration, the adhesive film for stacking semiconductor chips according to the invention enables the semiconductor silicone chips to be stacked in 3 or more layers without using a separate spacer between chips in order to keep a wire distance between upper and lower chips in stacking the chips. With the configuration, it is advantageous that reliability of semiconductors is not lowered because adhesiveness is kept despite of a repeated process of stacking chips subject to high temperature.

公开(公告)号：EP2045839A1

公开(公告)日：2009-04-08

申请号：EP07791028.9

申请日：2007-07-19

申请人： Sekisui Chemical Co., Ltd.

发明人： ISHIZAWA, Hideaki ,  HAYAKAWA, Akinobu

IPC分类号： H01L21/52 ,  C09J11/04 ,  C09J163/00 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

CPC分类号： C09J11/04 ,  C08G59/42 ,  C08L63/00 ,  C09J11/08 ,  C09J163/00 ,  C09J2203/326 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/26135 ,  H01L2224/26165 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29386 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/83138 ,  H01L2224/83855 ,  H01L2224/85205 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01061 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2224/29099 ,  H01L2224/29199

摘要： It is an object of the present invention to provide: an adhesive for electronic parts that makes it possible to accurately maintain a distance between electronic parts upon joining electronic parts such as two or more semiconductor chips and also to obtain reliable electronic parts such as a semiconductor device; a method for producing a semiconductor chip laminated body using the adhesive for electronic parts; and a semiconductor device using the adhesive for electronic parts.
The present invention is an adhesive for electronic parts configured to join the electronic parts, which contains: an adhesive composition comprising a curing compound and a curing agent; and spacer particles having a CV value of 10% or less, a viscosity at 1 rpm being 200 Pa·s or less and a viscosity at 10 rpm being 100 Pa·s or less, upon being measured at 25°C by using an E type viscometer, and a viscosity at 0.5 rpm being 1.4 to 3 times as large as the viscosity at 1 rpm, and the viscosity at 1 rpm being 2 to 5 times as large as the viscosity at 10 rpm.

摘要翻译： 它是本发明的一个目的是提供：用于电子部件那样的粘接剂使得有可能精确地设置在加入电子部件保持电子部件间的距离：诸如两个或多个半导体芯片，并且因此得到可靠的电子部件：诸如半导体 装置; 一种使用用于电子部件用粘合剂的半导体芯片层叠体的方法; 和使用用于电子部件用粘合剂的半导体器件。 本发明是一种用于配置为加入电子部件的电子部件，其含有粘合剂：在粘接剂组合物，其中包括固化化合物和固化剂; 并且具有10％或更低，粘度的CV值间隔粒子以1rpm为200·s以下，并在10rpm下的粘度为100·s以下，在通过使用E处在25℃下被测量 型粘度计，并以0.5rpm以1rpm为1.4〜3倍大的粘度的粘度，并以1rpm为2〜5倍之大以10rpm的粘度的粘度。

公开(公告)号：EP2800130A1

公开(公告)日：2014-11-05

申请号：EP13165820.5

申请日：2013-04-29

申请人： ABB Technology AG

发明人： Brem, Franziska ,  Liu, Chunlei ,  Duran, Hamit

IPC分类号： H01L21/60 ,  H01L23/13 ,  H01L23/495 ,  H01L23/051

CPC分类号： H01L24/92 ,  H01L21/6836 ,  H01L23/051 ,  H01L23/13 ,  H01L23/16 ,  H01L23/24 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/49503 ,  H01L23/49513 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L24/95 ,  H01L2221/68327 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/04026 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/26135 ,  H01L2224/26165 ,  H01L2224/2746 ,  H01L2224/2747 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/32258 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/33181 ,  H01L2224/83007 ,  H01L2224/83101 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83141 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/8321 ,  H01L2224/83222 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2924/13055 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

摘要： A method for bonding an electronics chip (10) to a substrate (12), the method comprising the steps of: coating a bonding area (14) of the chip (10) with a first metal layer (18); providing a bonding area (24) of the substrate (12) and/or the bonding area (14) of the chip (10) with a low melting point metal layer (30), wherein the bonding area (24) of the substrate (12) comprises a second metal layer (28); attaching a spacer (20) to the chip (10) and/or the substrate (12); positioning and fixing the chip (10) on the substrate (12); and transient liquid phase bonding the chip (10) to the substrate (12) by melting the low melting point layer (30), wherein the spacer (20) provides a specific distance between the first metal layer (18) and the second metal layer (28).

摘要翻译： 一种用于电子芯片（10）的键合到基底（12）的方法，该方法包括以下步骤：涂覆所述芯片（10）与第一金属层（18）的接合区域（14）; 提供所述基板的基板的接合区（24）（12）和/或芯片（10）具有低的低熔点金属层（30）的接合区域（14），其中，所述结合区域（24）（ 12）包括第二金属层（28）; 附接的间隔件（20）与芯片（10）和/或基底（12）; 定位和固定在基板上的芯片（10）（12）; 和瞬态液相接合芯片（10）到所述衬底（12）通过熔化低熔点层（30），其中所述间隔物（20）提供所述第一金属层（18）和第二金属层之间的特定距离 （28）。

公开(公告)号：EP2538436B1

公开(公告)日：2015-03-25

申请号：EP12161184.2

申请日：2012-03-26

申请人： Raytheon Company

发明人： Moody, Cody

IPC分类号： H01L21/50 ,  H01L21/56 ,  H01L23/10 ,  H01L21/60 ,  H01L23/00 ,  B81C1/00

CPC分类号： H01L24/83 ,  H01L21/563 ,  H01L23/10 ,  H01L24/03 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/26135 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29562 ,  H01L2224/2957 ,  H01L2224/29609 ,  H01L2224/29611 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29686 ,  H01L2224/32055 ,  H01L2224/32148 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83054 ,  H01L2224/8309 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/83948 ,  H01L2224/94 ,  H01L2924/01032 ,  H01L2924/01322 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

公开(公告)号：EP1970422A3

公开(公告)日：2010-03-10

申请号：EP07291507.7

申请日：2007-12-12

申请人： Toray Saehan Inc.

发明人： Sim, Chang-Hoon ,  Jun, Hae-Sang ,  Moon, Ki-Jeong ,  Lee, Jun-Ho ,  Park, Yun-Min

IPC分类号： C09J7/00 ,  H01L25/065

CPC分类号： H01L24/83 ,  C09J7/10 ,  C09J2201/36 ,  C09J2461/00 ,  C09J2463/00 ,  H01L25/0657 ,  H01L2224/26135 ,  H01L2224/29083 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/351 ,  Y10T428/24975 ,  Y10T428/28 ,  Y10T428/2848 ,  Y10T428/2852 ,  Y10T428/287 ,  Y10T428/31511 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention concerns an adhesive film for stacking chips which enables chips to be stacked in layers without using a separate spacer usually provided to keep a given distance between wires of an upper chip and a lower chip to have the same area. The adhesive film of the invention has an intermediate adhesive layer of thermoplastic phenoxy resin on both side of which a thermosetting adhesive layer of epoxy resin is placed, respectively, to make a three-layer structure, the thermoplastic phenoxy resin comprising UV curable small molecule compounds. The adhesive film of the invention is a multi-layered adhesive film produced by a method of comprising the steps of achieving compatibility on an interface between the thermosetting epoxy resin and thermoplastic phenoxy resin and then directly forming a phenoxy film of a high elastic modulus through UV curing in an adhesive film. With such a configuration, the adhesive film for stacking semiconductor chips according to the invention enables the semiconductor silicone chips to be stacked in 3 or more layers without using a separate spacer between chips in order to keep a wire distance between upper and lower chips in stacking the chips. With the configuration, it is advantageous that reliability of semiconductors is not lowered because adhesiveness is kept despite of a repeated process of stacking chips subject to high temperature.

公开(公告)号：EP2045839A4

公开(公告)日：2009-08-05

申请号：EP07791028

申请日：2007-07-19

申请人： SEKISUI CHEMICAL CO LTD

发明人： ISHIZAWA HIDEAKI ,  HAYAKAWA AKINOBU

IPC分类号： H01L21/52 ,  C09J11/04 ,  C09J163/00 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

CPC分类号： C09J11/04 ,  C08G59/42 ,  C08L63/00 ,  C09J11/08 ,  C09J163/00 ,  C09J2203/326 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/26135 ,  H01L2224/26165 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/29386 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/83138 ,  H01L2224/83855 ,  H01L2224/85205 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01059 ,  H01L2924/01061 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2224/29099 ,  H01L2224/29199

公开(公告)号：EP2538436A3

公开(公告)日：2013-10-30

申请号：EP12161184.2

申请日：2012-03-26

申请人： Raytheon Company

发明人： Moody, Cody

IPC分类号： H01L21/50 ,  H01L21/56 ,  H01L23/10 ,  H01L21/60 ,  H01L23/00 ,  B81C1/00

CPC分类号： H01L24/83 ,  H01L21/563 ,  H01L23/10 ,  H01L24/03 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/26135 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29562 ,  H01L2224/2957 ,  H01L2224/29609 ,  H01L2224/29611 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29686 ,  H01L2224/32055 ,  H01L2224/32148 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83054 ,  H01L2224/8309 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/83948 ,  H01L2224/94 ,  H01L2924/01032 ,  H01L2924/01322 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Hermetically sealed semiconductor wafer packages that include a first bond ring on a first wafer facing a complementary surface of a second bond ring on a second wafer. The package includes first and second standoffs of a first material, having a first thickness, formed on a surface of the first bond ring. The package also includes a eutectic alloy (does not have to be eutectic, typically it will be an alloy not specific to the eutectic ratio of the elements) formed from a second material and the first material to create a hermetic seal between the first and second wafer, the eutectic alloy formed by heating the first and second wafers to a temperature above a reflow temperature of the second material and below a reflow temperature of the first material, wherein the eutectic alloy fills a volume between the first and second standoffs and the first and second bond rings, and wherein the standoffs maintain a prespecified distance between the first bond ring and the second bond ring.

公开(公告)号：EP2538436A2

公开(公告)日：2012-12-26

申请号：EP12161184.2

申请日：2012-03-26

申请人： Raytheon Company

发明人： Moody, Cody

IPC分类号： H01L21/50 ,  H01L21/56 ,  H01L23/10

CPC分类号： H01L24/83 ,  H01L21/563 ,  H01L23/10 ,  H01L24/03 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/26135 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29562 ,  H01L2224/2957 ,  H01L2224/29609 ,  H01L2224/29611 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29686 ,  H01L2224/32055 ,  H01L2224/32148 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83054 ,  H01L2224/8309 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/83948 ,  H01L2224/94 ,  H01L2924/01032 ,  H01L2924/01322 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Hermetically sealed semiconductor wafer packages that include a first bond ring on a first wafer facing a complementary surface of a second bond ring on a second wafer. The package includes first and second standoffs of a first material, having a first thickness, formed on a surface of the first bond ring. The package also includes a eutectic alloy (does not have to be eutectic, typically it will be an alloy not specific to the eutectic ratio of the elements) formed from a second material and the first material to create a hermetic seal between the first and second wafer, the eutectic alloy formed by heating the first and second wafers to a temperature above a reflow temperature of the second material and below a reflow temperature of the first material, wherein the eutectic alloy fills a volume between the first and second standoffs and the first and second bond rings, and wherein the standoffs maintain a prespecified distance between the first bond ring and the second bond ring.

摘要翻译： 密封的半导体晶片封装，其包括第一晶片上的第一接合环，其面向第二晶片上的第二接合环的互补表面。 该封装包括形成在第一结合环的表面上的具有第一厚度的第一材料的第一和第二间隔。 该封装还包括共晶合金（不一定是共晶的，通常它是一种不属于元素的共晶比的合金），由第二种材料形成，并且第一种材料在第一和第二种之间形成气密封 晶片，通过将第一和第二晶片加热到高于第二材料的回流温度并低于第一材料的回流温度的温度形成的共晶合金，其中共晶合金填充第一和第二间隙之间的体积， 和第二结合环，并且其中所述支架在所述第一结合环和所述第二结合环之间保持预定的距离。

公开(公告)号：EP1970422A2

公开(公告)日：2008-09-17

申请号：EP07291507.7

申请日：2007-12-12

申请人： Toray Saehan Inc.

发明人： Sim, Chang-Hoon ,  Jun, Hae-Sang ,  Moon, Ki-Jeong ,  Lee, Jun-Ho ,  Park, Yun-Min

IPC分类号： C09J7/00 ,  H01L25/065

CPC分类号： H01L24/83 ,  C09J7/10 ,  C09J2201/36 ,  C09J2461/00 ,  C09J2463/00 ,  H01L25/0657 ,  H01L2224/26135 ,  H01L2224/29083 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01087 ,  H01L2924/10253 ,  H01L2924/351 ,  Y10T428/24975 ,  Y10T428/28 ,  Y10T428/2848 ,  Y10T428/2852 ,  Y10T428/287 ,  Y10T428/31511 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention concerns an adhesive film for stacking chips which enables chips to be stacked in layers without using a separate spacer usually provided to keep a given distance between wires of an upper chip and a lower chip to have the same area. The adhesive film of the invention has an intermediate adhesive layer of thermoplastic phenoxy resin on both side of which a thermosetting adhesive layer of epoxy resin is placed, respectively, to make a three-layer structure, the thermoplastic phenoxy resin comprising UV curable small molecule compounds. The adhesive film of the invention is a multi-layered adhesive film produced by a method of comprising the steps of achieving compatibility on an interface between the thermosetting epoxy resin and thermoplastic phenoxy resin and then directly forming a phenoxy film of a high elastic modulus through UV curing in an adhesive film. With such a configuration, the adhesive film for stacking semiconductor chips according to the invention enables the semiconductor silicone chips to be stacked in 3 or more layers without using a separate spacer between chips in order to keep a wire distance between upper and lower chips in stacking the chips. With the configuration, it is advantageous that reliability of semiconductors is not lowered because adhesiveness is kept despite of a repeated process of stacking chips subject to high temperature.

摘要翻译： 本发明涉及一种用于堆叠芯片的粘合膜，其能够使芯片层叠而不使用通常设置用于保持上芯片和下芯片的导线之间的给定距离的单独间隔件具有相同的面积。 本发明的粘合膜具有热塑性苯氧基树脂的中间粘合剂层，其两侧分别放置有环氧树脂的热固性粘合剂层以制成三层结构，所述热塑性苯氧基树脂包含可UV固化的小分子化合物 。 本发明的粘合膜是通过以下步骤制造的多层粘合膜，所述方法包括以下步骤：在热固性环氧树脂和热塑性苯氧基树脂之间的界面上实现相容性，然后通过UV直接形成具有高弹性模量的苯氧基膜 在粘合膜中固化。 通过这样的结构，根据本发明的用于堆叠半导体芯片的粘合膜能够使半导体硅芯片层叠在3层以上，而不需要在芯片之间使用单独的间隔件，以便在层叠时保持上下芯片之间的线间距 芯片。 通过该结构，由于尽管重叠堆叠处于高温的芯片的过程，因此保持了粘附性，因此半导体的可靠性不会降低是有利的。