公开(公告)号：EP4451325A1

公开(公告)日：2024-10-23

申请号：EP24167890.3

申请日：2024-03-29

申请人： Nexperia B.V.

发明人： Patel, Hamza Hanif ,  Yogeswaran, Nivasan ,  Gajda, Mark Andrzej

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L29/06 ,  H01L23/29 ,  H01L23/482

摘要： A method of manufacturing a semiconductor device, such as a power MOSFET, comprising: forming a metal layer, the metal layer including an edge where the metal layer ends; forming a passivation layer at a layer higher than the metal layer; and forming a passivation slot in the passivation layer, wherein the passivation slot is at least partially positioned over the metal layer, and wherein the passivation slot divides the passivation layer into multiple regions, wherein each region experiences a reduced tensile stress σ SiNx as a result of the passivation slot.

公开(公告)号：EP4428928A1

公开(公告)日：2024-09-11

申请号：EP24305307.1

申请日：2024-02-27

申请人： STMicroelectronics International N.V.

发明人： TRINGALI, Cristina ,  CONSTANT, Aurore ,  CASTAGNA, Maria Eloisa ,  IUCOLANO, Ferdinando

IPC分类号： H01L29/778 ,  H01L23/29 ,  H01L23/31 ,  H01L29/10 ,  H01L29/40 ,  H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/1066 ,  H01L23/291 ,  H01L23/3192 ,  H01L23/3171

摘要： A HEMT transistor (50) is formed on a semiconductor body (52) having a semiconductive heterostructure (54, 56). A gate region (57) of a semiconductor material, is arranged on the semiconductor body (52) and has lateral sides. Sealing regions (61) of non-conductive material extend on the lateral sides of the gate region (57); and a passivation layer (65) of non-conductive material has surface portions (65A) extending on the semiconductor body (52), on both sides of the gate region (57) and at a distance therefrom. Spacer regions (62) extend laterally and in contact with the sealing regions (61). The passivation layer (65) furthermore has raised portions (65B) extending on the spacer regions (62), laterally and at a distance from the sealing regions (61). The sealing regions (61) and the passivation layer (65) have different characteristic, such as are of different material or have different thicknesses.

公开(公告)号：EP4386829A3

公开(公告)日：2024-08-21

申请号：EP23207872.5

申请日：2023-11-06

申请人： STMicroelectronics International N.V.

发明人： BELLOCCHI, Gabriele ,  RASCUNA', Simone ,  PUGLISI, Valeria

IPC分类号： H01L23/31 ,  H01L23/29 ,  H01L23/00 ,  H01L29/16 ,  H01L29/872 ,  H01L29/06

CPC分类号： H01L23/3171 ,  H01L23/3192 ,  H01L23/291 ,  H01L23/3142 ,  H01L29/1608 ,  H01L23/562 ,  H01L29/872 ,  H01L29/6606 ,  H01L29/0623

摘要： Electronic device (50; 100; 110), comprising: a solid body (53, 58, 61) including a Silicon Carbide substrate, and further including an electrical terminal (58) of the electronic device on the substrate (53); a passivation layer (69) on the electrical terminal (58), of a first material; and a first adhesion improving layer (82; 102; 112) coupled to the passivation layer (69) and to the solid body (53), of a second material having predefined characteristics of adhesion to the first material, and configured to bond together the passivation layer (69) and the solid body (53).

公开(公告)号：EP3422399B1

公开(公告)日：2024-07-31

申请号：EP17178592.6

申请日：2017-06-29

IPC分类号： H01L23/24 ,  H01L23/26 ,  H01L23/29 ,  H01L23/00 ,  H01L25/07

CPC分类号： H01L23/24 ,  H01L23/26 ,  H01L23/295 ,  H01L23/564 ,  H01L2924/18120130101 ,  H01L2224/4809120130101 ,  H01L2224/4822720130101 ,  H01L2224/4847220130101 ,  H01L2224/3222520130101 ,  H01L2224/4911320130101 ,  H01L2224/7326520130101 ,  H01L25/072

公开(公告)号：EP4047024B1

公开(公告)日：2024-07-10

申请号：EP20877174.1

申请日：2020-09-18

IPC分类号： H01L23/29 ,  H01L23/31 ,  C09J135/02 ,  C08F2/44 ,  C08F122/14 ,  C09J4/00 ,  C08F222/14 ,  C08F2/38

CPC分类号： C08F2/44 ,  C08F2/38 ,  C09J135/02 ,  H01L23/293 ,  C08F122/14 ,  C09J4/00 ,  C08F222/14

公开(公告)号：EP4374423A1

公开(公告)日：2024-05-29

申请号：EP22757402.7

申请日：2022-07-19

申请人： Momentive Performance Materials Inc.

发明人： RUPPENTHAL, Andrea ,  GROSSMANN, Matthias ,  MISTRY, Umesh ,  WILKEN, Karen

IPC分类号： H01L23/29 ,  H01L33/56

CPC分类号： C08G77/12 ,  C08G77/20 ,  H01L23/296

公开(公告)号：EP4125119B1

公开(公告)日：2024-04-17

申请号：EP22187481.1

申请日：2022-07-28

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L21/56 ,  H01L21/48 ,  H01L21/60 ,  C23C14/04 ,  C23C14/28 ,  H01L21/02 ,  H01L21/285 ,  H01L23/495 ,  H01L23/31 ,  H01L23/29 ,  H01L25/00 ,  H01L25/16 ,  H01L25/07

CPC分类号： H01L2224/2424620130101 ,  H01L2224/2424520130101 ,  H01L2224/2413720130101 ,  H01L2224/2410120130101 ,  H01L2224/2410520130101 ,  H01L2224/240220130101 ,  H01L2224/24520130101 ,  H01L2224/2510520130101 ,  H01L2224/2517120130101 ,  H01L2224/8203920130101 ,  H01L2224/8210520130101 ,  H01L2224/8221420130101 ,  H01L2224/3224520130101 ,  H01L2224/7326720130101 ,  H01L2224/9224420130101 ,  H01L24/82 ,  H01L24/24 ,  H01L24/25 ,  H01L2924/0001420130101 ,  H01L24/83 ,  H01L24/32 ,  H01L25/50 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/16 ,  H01L21/56 ,  H01L21/4825 ,  H01L23/49575 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/49517 ,  C23C14/28 ,  C23C14/048

公开(公告)号：EP4322208A1

公开(公告)日：2024-02-14

申请号：EP23188719.1

申请日：2023-07-31

申请人： Littelfuse Semiconductor (Wuxi) Co., Ltd.

发明人： Zhang, Glenda ,  Zhang, Lucas ,  He, Lei

IPC分类号： H01L23/31 ,  H01L29/861 ,  H01L29/06 ,  H01L23/29

摘要： An overvoltage protection device (100) may include an n-type semiconductor substrate (101), a p-type layer (114) disposed atop the n-type semiconductor substrate, and a passivation region (118) formed in the n-type semiconductor substrate and the p-type layer, wherein the passivation region comprises a semi-insulating polycrystalline silicon (SIPOS) layer (122).

公开(公告)号：EP4317068A1

公开(公告)日：2024-02-07

申请号：EP22780474.7

申请日：2022-03-24

申请人： Denka Company Limited

发明人： MINAMIKAWA, Takaaki ,  YAMAMOTO, Akihiko ,  FUKUDA, Takashi

IPC分类号： C01B33/18 ,  C08K3/36 ,  C08L101/00 ,  H01L23/29 ,  H01L23/31

摘要： [Problem] To provide an inorganic powder that can be used to obtain a resin composition with excellent flowability and that can prevent increases in aggregated particles in the resin composition.
[Solution] A spherical inorganic powder having, in a particle size frequency distribution, a first peak having a local maximum value in a particle size region from 0.1 µm or larger to 0.6 µm or smaller, and a second peak having a local maximum value in a particle size region from 1.5 µm or larger to 5.0 µm or smaller, wherein a value of a ratio of a frequency at the local maximum value of the second peak to a frequency at the local maximum value of the first peak is 1.5 or higher and lower than 10.0.

公开(公告)号：EP3729497B1

公开(公告)日：2024-01-31

申请号：EP18892054.0

申请日：2018-12-18

发明人： HUANG, Hong Min ,  XU, Helen Xiao

IPC分类号： H01L23/14 ,  H01L23/13 ,  H01L23/29 ,  C08G77/50 ,  C09G1/16 ,  H01L21/02