Abstract:
PROBLEM TO BE SOLVED: To provide an anisotropic conductive material capable of attaining low conductive resistance and high adhesive strength, and to provide a manufacturing method thereof. SOLUTION: When applying thermocompression bonding onto a glass substrate 11 and a metal wiring material 12, Si on the surface of the glass substrate 11 and alkoxyl group (OR) of disulfide silane terminal modified with hydrophobic silica 14 are reacted each other on an interface between a glass substrate 11 and an anisotropic conductive material 13, and they are chemically bonded to each other. Furthermore, an S-S bond (disulfide bond) of a part of disulfide silane is dissociated with heat in thermocompression bonding on the interface between the metal wiring material 12 and the anisotropic conductive material 13, and the dissociated sulfide silane is chemically bonded to a metal Me. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a transferred structure which ensures that detachment of a material to be transferred from a mother die is easily performed without destroying a fine pattern and that a transfer pattern of the mother die is properly transferred onto the material to be transferred, while keeping the durability of the mother die in repeated transfer operation over a long period of time, and to provide a mother die for use in such a method. SOLUTION: A transferred structure including a material to be transferred is obtained in such a manner that a film of a silane coupling agent represented by formula (I) is formed on the front surface of a mother die where a transfer pattern is formed on its front surface, and a top surface pattern of the mother die is transferred onto a given material to be transferred followed by detachment of the material to be transferred from the mother die. In the formula (I), n is an integer of 8, 10, 12 or 14; m is an integer of 3 or 4; X, Y, and Z are hydrolyzable groups independently representing methoxy group, ethoxy group, propoxy group, isopropoxy group, or halogen atom respectively. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an epoxy resin composition which is excellent in drillability, moldability, and interlayer adhesion, and in which a desmear treatment can be preferably performed. SOLUTION: The epoxy resin composition includes an epoxy resin, a hardener, and an inorganic filler. The epoxy resin is an epoxy resin having a dicyclopentadiene skeleton, and an epoxy resin having a novolac skeleton. The hardener is a phenol resin hardener having a biphenyl skeleton. The inorganic filler is spherical silica surface-treated with an epoxysilane, and aluminum hydroxide. The content of the spherical silica for the whole amount of the epoxy resin composition is 20 to 50 mass%. The content of the aluminum hydroxide for the whole amount of the spherical silica is 2 to 15 mass%. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
A semiconductor device is provided that includes wiring patterns on a substrate formed of an organic insulating film, and a semiconductor chip mounted on the substrate. A liquid crystal display panel and a PW board are electrically connected to each other with an anisotropic conductive adhesive. At least one surface of the insulating film is treated with a silicon coupling material. The silicon coupling material contains silicon (Si) at a surface element density of 0.5 atomic percent to 12.0 atomic percent on a surface of the insulating film.