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公开(公告)号:JP5257499B2
公开(公告)日:2013-08-07
申请号:JP2011229029
申请日:2011-10-18
Applicant: 日立化成株式会社
IPC: H01L21/301 , C09J7/00 , C09J11/04 , C09J11/06 , C09J201/00
CPC classification number: H01L21/6835 , H01L21/67092 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/90 , H01L2221/6834 , H01L2223/54426 , H01L2223/54473 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81121 , H01L2224/81191 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/83191 , H01L2224/838 , H01L2224/83851 , H01L2224/83885 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01052 , H01L2924/01058 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07811 , H01L2924/15788 , H01L2924/00 , H01L2924/3512 , H01L2924/00014
Abstract: To provide a method of manufacturing semiconductor devices, the method being capable of efficiently obtaining a singulated semiconductor chip upon which an adhesive is adhered and also capable of excellently bonding a semiconductor chip to a wiring substrate, and provide an adhesive film. A layered product 60 in which a dicing tape 9, an adhesive layer 3, and a semiconductor wafer 6 are stacked in this order so that a circuit surface 6a of the semiconductor wafer 6 may face the dicing tape 9 side. A cutting position is recognized by recognizing a circuit pattern P in the circuit surface 6a from a rear surface 6b of the semiconductor wafer 6. At least the semiconductor wafer 6 and the adhesive layer 3 are cut in the thickness direction of the layered product 60. The dicing tape 9 is cured to peel off the dicing tape 9 and the adhesive layer 3. A projection electrode 4 of a semiconductor chip 26 is aligned with a wiring 12 of a wiring substrate 40. The wiring substrate 40 and the semiconductor chip 26 are bonded via an adhesive layer 23 so that the wiring 12 and the projection electrode 4 may be electrically connected to each other.
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公开(公告)号:JP5186706B2
公开(公告)日:2013-04-24
申请号:JP2009168976
申请日:2009-07-17
Applicant: 日立化成株式会社
IPC: C09J179/08 , C09J7/00 , C09J163/00 , H01L21/52 , H01L23/29 , H01L23/31
CPC classification number: H01L23/488 , C09J179/08 , G03F7/037 , H01L21/2007 , H01L21/76251 , H01L21/78 , H01L27/14618 , H01L27/14683 , H01L2224/48091 , Y10T156/1002 , Y10T428/24479 , Y10T428/24802 , H01L2924/00014
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公开(公告)号:JP5573970B2
公开(公告)日:2014-08-20
申请号:JP2013001933
申请日:2013-01-09
Applicant: 日立化成株式会社
IPC: H01L21/301 , H01L21/60
CPC classification number: H01L21/6835 , H01L21/67092 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/90 , H01L2221/6834 , H01L2223/54426 , H01L2223/54473 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81121 , H01L2224/81191 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/83191 , H01L2224/838 , H01L2224/83851 , H01L2224/83885 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01052 , H01L2924/01058 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07811 , H01L2924/15788 , H01L2924/00 , H01L2924/3512 , H01L2924/00014
Abstract: To provide a method of manufacturing semiconductor devices, the method being capable of efficiently obtaining a singulated semiconductor chip upon which an adhesive is adhered and also capable of excellently bonding a semiconductor chip to a wiring substrate, and provide an adhesive film. A layered product 60 in which a dicing tape 9, an adhesive layer 3, and a semiconductor wafer 6 are stacked in this order so that a circuit surface 6a of the semiconductor wafer 6 may face the dicing tape 9 side. A cutting position is recognized by recognizing a circuit pattern P in the circuit surface 6a from a rear surface 6b of the semiconductor wafer 6. At least the semiconductor wafer 6 and the adhesive layer 3 are cut in the thickness direction of the layered product 60. The dicing tape 9 is cured to peel off the dicing tape 9 and the adhesive layer 3. A projection electrode 4 of a semiconductor chip 26 is aligned with a wiring 12 of a wiring substrate 40. The wiring substrate 40 and the semiconductor chip 26 are bonded via an adhesive layer 23 so that the wiring 12 and the projection electrode 4 may be electrically connected to each other.
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公开(公告)号:JP5532085B2
公开(公告)日:2014-06-25
申请号:JP2012167333
申请日:2012-07-27
Applicant: 日立化成株式会社
CPC classification number: H01L23/488 , C09J179/08 , G03F7/037 , H01L21/2007 , H01L21/76251 , H01L21/78 , H01L27/14618 , H01L27/14683 , H01L2224/48091 , Y10T156/1002 , Y10T428/24479 , Y10T428/24802 , H01L2924/00014
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公开(公告)号:JP5585542B2
公开(公告)日:2014-09-10
申请号:JP2011134729
申请日:2011-06-17
Applicant: 日立化成株式会社
IPC: H01L21/52 , C09J7/00 , C09J11/06 , C09J133/00 , C09J163/00 , H01L21/60
CPC classification number: H01L2224/2919 , H01L2924/01006 , H01L2924/0665 , H01L2924/00
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公开(公告)号:JP5333060B2
公开(公告)日:2013-11-06
申请号:JP2009197066
申请日:2009-08-27
Applicant: 日立化成株式会社
IPC: H01L21/52 , C09J4/00 , C09J7/02 , C09J163/00 , C09J179/08 , H01L21/301
CPC classification number: H01L24/27 , H01L24/29 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83191 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which makes an adhesive layer hardly peeled off from a support member, and allows the adhesive layer to fill recesses of irregularities formed on the surface of the support member in a proper manner. SOLUTION: The manufacturing method for the semiconductor device includes a step of pasting a dicing sheet 12 on a bonding layer 4 on the main surface Ws of a semiconductor wafer W, a step of dicing the semiconductor wafer W and the bonding layer, a step of emitting radiation to an adhesive layer 10 of the dicing sheet to obtain a semiconductor element with the bonding layer, and a step of bonding the semiconductor element with the bonding layer to a support member. The bonding layer contains an adhesive compound which shows a tensile elastic modulus of 0.5 to 500 MPa at 260°C after being cured, and satisfies conditions represented by equations: (1): 1.0×10 3 ≤η1≤1.0×10 7 and (2): 1.0×10 3 ≤η2≤1.0×10 7 . COPYRIGHT: (C)2010,JPO&INPIT
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公开(公告)号:JP5444905B2
公开(公告)日:2014-03-19
申请号:JP2009168980
申请日:2009-07-17
Applicant: 日立化成株式会社
CPC classification number: H01L23/488 , C09J179/08 , G03F7/037 , H01L21/2007 , H01L21/76251 , H01L21/78 , H01L27/14618 , H01L27/14683 , H01L2224/48091 , Y10T156/1002 , Y10T428/24479 , Y10T428/24802 , H01L2924/00014
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公开(公告)号:JP5181222B2
公开(公告)日:2013-04-10
申请号:JP2008522496
申请日:2007-06-20
Applicant: 日立化成株式会社
IPC: H01L21/301 , C09J7/02 , C09J11/04 , C09J11/06 , C09J201/00 , H01L21/60
CPC classification number: H01L21/6835 , H01L21/67092 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/90 , H01L2221/6834 , H01L2223/54426 , H01L2223/54473 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81121 , H01L2224/81191 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/83191 , H01L2224/838 , H01L2224/83851 , H01L2224/83885 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01052 , H01L2924/01058 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07811 , H01L2924/15788 , H01L2924/00 , H01L2924/3512 , H01L2924/00014
Abstract: To provide a method of manufacturing semiconductor devices, the method being capable of efficiently obtaining a singulated semiconductor chip upon which an adhesive is adhered and also capable of excellently bonding a semiconductor chip to a wiring substrate, and provide an adhesive film. A layered product 60 in which a dicing tape 9, an adhesive layer 3, and a semiconductor wafer 6 are stacked in this order so that a circuit surface 6a of the semiconductor wafer 6 may face the dicing tape 9 side. A cutting position is recognized by recognizing a circuit pattern P in the circuit surface 6a from a rear surface 6b of the semiconductor wafer 6. At least the semiconductor wafer 6 and the adhesive layer 3 are cut in the thickness direction of the layered product 60. The dicing tape 9 is cured to peel off the dicing tape 9 and the adhesive layer 3. A projection electrode 4 of a semiconductor chip 26 is aligned with a wiring 12 of a wiring substrate 40. The wiring substrate 40 and the semiconductor chip 26 are bonded via an adhesive layer 23 so that the wiring 12 and the projection electrode 4 may be electrically connected to each other.
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