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公开(公告)号：KR100255435B1
公开(公告)日：2000-05-01
申请号：KR1019970010678
申请日：1997-03-27
申请人： 미쓰비시덴키 가부시키가이샤
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/04042 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05669 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/4554 , H01L2224/45669 , H01L2224/4807 , H01L2224/48091 , H01L2224/48247 , H01L2224/48451 , H01L2224/48453 , H01L2224/48465 , H01L2224/48505 , H01L2224/48507 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48669 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48769 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48869 , H01L2224/73265 , H01L2224/78301 , H01L2224/85099 , H01L2224/85181 , H01L2224/85203 , H01L2224/85205 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/15747 , H01L2924/20106 , H01L2924/20107 , H01L2924/20303 , H01L2924/20753 , Y10S228/904 , H01L2924/00012 , H01L2224/78 , H01L2924/00
摘要： 본 발명은 미소한 와이어 본딩 접합부의 신뢰성을 향상시키는 것으로서, 금속 볼(3b)이 본딩 패드(12)에 접촉한후에 제 1본딩 하중을 120gf정도까지 급균배로 상승시켜 금속 와이어(3a)와 본딩 패드(2)의 접합 계면에서 상호 급격한 소성유동을 발생한다. 이어서 제 2본딩 하중을 접합핵(6a)에서의 금속 볼(3b)과 본딩 패드(2)의 접촉이 확보되는 40gf정도의 낮은 값으로 제어한다. 이어서, 초음파 진동인가후 제 3본딩 하중을 10-20gf정도로 약 10ms인가하며, 복수 개의 독립형상 접합부(6b)를 균일하게 성장시킨다. 또한, 최종 단계에서는 금속 볼(3b)의 접합부 주변부에 초음파 진동의 에너지가 집중적으로 활동하도록 제 4본딩 하중을 25-40gf정도로 약 3-5ms인가하여 독립형상 접합부(6b)를 둘러싸는 띠형상 접합부(7)를 형성한다.
摘要翻译： 一种用于通过使用负载和超声波振动将金属线与设置在半导体元件上的接合焊盘接合的引线接合方法，包括：在金属线与接合垫接触的时间间隔期间施加超声波振动 连续施加低于所述第一接合负载的第一接合负载和第二接合负载; 并且在施加超声波振动之后，连续施加尺寸为第二接合负载的负载的约50％的第三接合负载和低于第一接合负载的第四接合负载，并且高于第三接合负载 。 细线接合接头的可靠性显着提高，能够以低成本制造高品质的半导体器件。
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公开(公告)号：KR1019960009982B1
公开(公告)日：1996-07-25
申请号：KR1019880000418
申请日：1988-01-21
申请人： 가부시끼가이샤 히다치 세이사꾸쇼
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , B23K20/007 , B23K20/24 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L2224/02166 , H01L2224/05599 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4556 , H01L2224/45565 , H01L2224/45686 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/73265 , H01L2224/78268 , H01L2224/78301 , H01L2224/786 , H01L2224/85045 , H01L2224/85075 , H01L2224/85099 , H01L2224/851 , H01L2224/85181 , H01L2224/85203 , H01L2224/85205 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01018 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01031 , H01L2924/01039 , H01L2924/01043 , H01L2924/01047 , H01L2924/01052 , H01L2924/01057 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/12042 , H01L2924/1301 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/20753 , H01L2924/20756 , H01L2924/30105 , H01L2924/3025 , H01L2924/20752 , H01L2924/01004 , H01L2924/00 , H01L2924/00012 , H01L2924/00015 , H01L2224/85399
摘要： 요약없음.
摘要翻译： 当将涂覆的线粘合到结合部位时，形成由可燃气体和用于降低可燃气体的燃烧温度的温度控制气体组成的混合气体，并且在涂覆的电线的接合部分去除绝缘体，从而剥离 通过使用由混合气体的可燃气体的燃烧产生的燃烧火焰的金属线的表面。 绝缘体的去除由绝缘体去除焊炬执行。 此外，金属球可以形成在涂覆线的端部上，金属球接合到接合位置，例如， 半导体芯片的外部端子。 涂层线的另一部分与芯片的外部引导线和接触部分处的绝缘体接触。 然后线的另一部分可以结合到引线。 因此，燃烧火焰（其不损坏或导致金属丝的击穿）将围绕涂覆线的接合部分的整个区域围绕，从而可以可靠地去除线的绝缘体。 这减少了接合缺陷。 此外，涂层线材的熔化和收缩的绝缘体可以被吹走，以防止绝缘体球体在导线上形成。
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公开(公告)号：KR100941832B1
公开(公告)日：2010-02-11
申请号：KR1020080019169
申请日：2008-02-29
申请人： 닛토덴코 가부시키가이샤
CPC分类号： H01L24/83 , H01L21/6836 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L2221/68327 , H01L2224/05599 , H01L2224/274 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83855 , H01L2224/83885 , H01L2224/85001 , H01L2224/85099 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06575 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/0635 , H01L2224/78 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要： 본 발명의 열경화형 다이 본딩 필름은 반도체 장치의 제조시에 사용하는 열경화형 다이 본딩 필름으로서, 열가소성 수지 성분 5 내지 15 중량％ 및 열경화성 수지 성분 45 내지 55 중량％를 주성분으로 함유하고, 열경화 전의 100 ℃에서의 용융 점도가 400 Paㆍs 이상 2500 Paㆍs 이하인 것을 특징으로 한다.
열경화형 다이 본딩 필름-
公开(公告)号：KR1020040002710A
公开(公告)日：2004-01-07
申请号：KR1020030041666
申请日：2003-06-25
申请人： 가부시키가이샤 신가와
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , B23K20/005 , B23K20/007 , B23K20/10 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/05624 , H01L2224/05647 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48624 , H01L2224/48647 , H01L2224/48824 , H01L2224/48847 , H01L2224/78268 , H01L2224/78271 , H01L2224/78301 , H01L2224/85009 , H01L2224/85045 , H01L2224/85099 , H01L2224/85205 , H01L2924/00011 , H01L2924/01029 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01322 , H01L2924/20752 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/01006
摘要： PURPOSE: To set copper as an object of wire bonding in a method for forming an initial bowl of a wire for wire bonding and an apparatus for wire bonding. CONSTITUTION: The apparatus 50 for wire bonding includes a capillary 16 in which the wire 12 is inserted. When a switch of a first DC high-voltage power supply 56 is turned on, an atmospheric discharge occurs between a tip of the wire 12 and a torch electrode 52, the tip of the wire 12 is melted by the discharge to form a bowl-like ball base. Then, when the switch of a second high-voltage power supply 66 is turned on, an atmospheric discharge occurs between a pair of ionization gas forming electrodes 60a and 60b made of a lower melting point coating material than the wire, and an ionization gas including tin ion is formed. The ball base is included in the ionization gas and thereby the tin is adhered to the surface of the ball base, and the initial bowl 58 is formed in which a low melting point coating material is adhered on the surface.
摘要翻译： 目的：在用于形成用于引线接合的线的初始碗的形成方法和引线接合装置的方法中，将铜作为引线接合的对象进行设定。 构成：用于引线接合的装置50包括其中插入有导线12的毛细管16。 当第一直流高压电源56的开关接通时，在导线12的尖端和焊炬电极52之间发生大气放电，线12的尖端通过放电熔化， 像球座。 然后，当第二高压电源66的开关接通时，在由比线材低的熔点涂层材料制成的一对电离气体形成电极60a和60b之间产生大气放电，以及电离气体包括 形成锡离子。 球基体包含在电离气体中，由此锡附着在球座的表面上，并且形成初始碗58，其中低熔点涂层材料粘附在表面上。
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公开(公告)号：KR1019900001223B1
公开(公告)日：1990-03-05
申请号：KR1019820001045
申请日：1982-03-11
申请人： 모토로라 솔루션즈, 인크.
发明人： 데니스알.올슨-1
IPC分类号： H01L23/047 , H01L23/48
CPC分类号： H01L23/3107 , H01L23/045 , H01L23/4924 , H01L23/49562 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/04026 , H01L2224/29111 , H01L2224/32245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/48247 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/73265 , H01L2224/85099 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/14 , H01L2924/15747 , H01L2924/16152 , H01L2924/181 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00012 , H01L2924/00 , H01L2924/0133 , H01L2924/3512 , H01L2924/00015 , H01L2224/05599
摘要： a package with copper alloy die mount and a semiconductor die with a first and a second surface; a first metallized part to provide electrical contact on the above first surface; metallizing lead suitable to connect the above die with the above package; a copper alloy lead connection package fixed mechanically on a second metallized part and on the die mount; a copper connection device to electrically connect the second metallized part to the lead connection package; a device sealing each of die, copper connection, die mount, and lead connection package.
摘要翻译： 具有铜合金管芯安装的封装和具有第一和第二表面的半导体管芯; 第一金属化部分，用于在上述第一表面上提供电接触; 金属化导线适用于将上述模具与上述封装连接; 铜合金引线连接封装机械地固定在第二金属化部分和芯片安装件上; 铜连接装置，用于将第二金属化部分电连接到引线连接封装; 一个密封模具，铜连接，模具安装和引线连接封装的器件。
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公开(公告)号：KR101856996B1
公开(公告)日：2018-06-20
申请号：KR1020137016114
申请日：2011-11-22
申请人： 센스에어 아베
发明人： 브라운,스테판 , 닉라우스,프란크 , 피스체르,안드레아스 , 그라딘,헨릭
CPC分类号： H01L24/85 , B23K20/007 , C22C19/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/94 , H01L2224/04042 , H01L2224/05571 , H01L2224/05599 , H01L2224/45 , H01L2224/45015 , H01L2224/45139 , H01L2224/45155 , H01L2224/4813 , H01L2224/48453 , H01L2224/48463 , H01L2224/78301 , H01L2224/85045 , H01L2224/85099 , H01L2224/85205 , H01L2224/85345 , H01L2224/85375 , H01L2224/85385 , H01L2224/85399 , H01L2224/858 , H01L2224/85855 , H01L2224/85899 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2224/45099 , H01L2924/00 , H01L2224/05552 , H01L2924/01049 , H01L2924/00015 , H01L2924/20753 , H01L2924/01022
摘要： 본발명은기판에형상기억합금와이어를접합하는방법에관한것으로, 상기와이어는기판에 3D 구조로기계적으로접합한다. 본발명은또한형상기억합금와이어가접합된기판을포함하는장치에관한것으로, 상기와이어는기판에 3D 구조로기계적으로접합한다.
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公开(公告)号：KR100558133B1
公开(公告)日：2006-03-10
申请号：KR1020030041666
申请日：2003-06-25
申请人： 가부시키가이샤 신가와
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , B23K20/005 , B23K20/007 , B23K20/10 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/05624 , H01L2224/05647 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48624 , H01L2224/48647 , H01L2224/48824 , H01L2224/48847 , H01L2224/78268 , H01L2224/78271 , H01L2224/78301 , H01L2224/85009 , H01L2224/85045 , H01L2224/85099 , H01L2224/85205 , H01L2924/00011 , H01L2924/01029 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01322 , H01L2924/20752 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/01006
摘要： 와이어본딩용 와이어의 이니셜 볼 형성방법 및 와이어본딩 장치에서, 동을 와이어본딩의 대상으로 하는 것이다.
와이어본딩 장치(50)는, 와이어(12)를 삽입 통과시키는 캐필러리(16)를 구비하고, 제 1 직류 고압전원(56)의 스위치를 ON함으로써 와이어(12)의 선단과 토치 전극(52) 사이에서 공중방전이 일어나고, 와이어(12)의 선단이 방전에 의해 용융하여 볼 형상의 볼 베이스가 형성된다. 뒤이어서, 제 2 고압전원(66)의 스위치를 ON함으로써, 와이어보다 저융점인 코팅재료로 이루어지는 1쌍의 전리 가스체 형성 전극(60a, 60b) 사이에서 공중방전이 일어나고, 주석 이온을 포함하는 전리 가스체가 형성된다. 볼 베이스를 전리 가스체의 내부에 포함하도록 함으로써 볼 베이스의 표면에 주석을 부착시키고, 표면에 저융점의 코팅재료가 부착된 이니셜 볼(58)이 형성된다.
볼 베이스, 와이어, 캐필러리, 토치 전극, 전리 가스체, 주석, 고압전원.摘要翻译： 一种具有毛细管的引线接合装置，所述毛细管穿过其中; 并且当第一直流高压电源的开关接通时，在电线的尖端和焊炬电极之间发生空间放电，并且电线的末端通过放电熔化， 球形球座。 当第二高压电源的开关接通时，在由熔点低于电线的涂层材料制成的一对离解气体形成电极之间发生空间放电，使得含有 形成锡离子。 球底座位于离解气体的内部，因此锡附着于球座的表面，形成附着在表面的低熔点涂料的初始球。
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公开(公告)号：KR1020040002709A
公开(公告)日：2004-01-07
申请号：KR1020030041664
申请日：2003-06-25
申请人： 가부시키가이샤 신가와
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , B23K20/007 , B23K2201/40 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/05647 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48225 , H01L2224/48227 , H01L2224/48463 , H01L2224/48647 , H01L2224/48847 , H01L2224/78268 , H01L2224/78271 , H01L2224/78301 , H01L2224/85045 , H01L2224/85099 , H01L2224/85205 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/00015
摘要： PURPOSE: To set copper as an object of wire bonding in a method for forming an initial bowl of a wire for wire bonding and an apparatus for wire bonding. CONSTITUTION: The apparatus 10 for wire bonding includes a capillary 16 for inserting the wire 12, a torch electrode 18 made of a low melting point material containing, for example, tin, and a DC high voltage power supply 22. When a switch of the power supply 22 is turned on, an atmospheric discharge occurs between a tip of the wire 12 and the torch electrode 18, the tip of the wire 12 is melted by the discharge to be formed in a ball-like state, the tin of the electrode 18 is heated to a high temperature and scattered to the air, tin ion 24 of the ionized plasma is attracted to the melted tip of the wire of a negative potential to the torch electrode, and the tin is adhered to the ball-like surface. Thus, the initial bowl 28 is formed in which a coating material of the low melting point is adhered to the surface.
摘要翻译： 目的：在用于形成用于引线接合的线的初始碗的形成方法和引线接合装置的方法中，将铜作为引线接合的对象进行设定。 构成：用于引线接合的装置10包括用于插入线12的毛细管16，由含有例如锡的低熔点材料制成的炬电极18和直流高压电源22.当开关 电源22接通，在线12的尖端和炬电极18之间发生大气放电，线12的前端通过放电形成为球状状态而熔化，电极的锡 18被加热到高温并散布到空气中，离子化等离子体的锡离子24被吸引到焊炬电极的负电位的熔化的尖端，并且锡粘附到球状表面。 因此，形成初始的碗28，其中低熔点的涂层材料粘附到表面。
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公开(公告)号：KR1020140098699A
公开(公告)日：2014-08-08
申请号：KR1020140010673
申请日：2014-01-28
申请人： 시게이트 테크놀로지 엘엘씨
发明人： 리,레핑 , 케오,사라부트 , 메이타그,카라엘. , 파리크,프라미트피. , 오'콘스키,제프알. , 헤렌딘,마크에이. , 호엔,조엘더블유. , 힙웰,로저엘. , 스코벨,조제이. , 이벨,존엘. , 마르쿼트,랄프 , 너트슨,에드워드
IPC分类号： H01L21/60
CPC分类号： G11B5/102 , G11B5/3169 , G11B5/3173 , G11B5/4826 , G11B2005/0021 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48463 , H01L2224/48644 , H01L2224/85012 , H01L2224/85099 , H01L2224/85205 , H01L2924/12042 , H01L2924/20751 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/20306 , H01L2924/20307 , H01L2924/20308 , H01L2924/20309 , H01L2924/20752 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： This disclosed technique describes methods and systems for achieving a gold wire ball bond which has a smaller diameter compared to 1/1000 inch by using ultrasonic bonding energy without heating the bonding pad of a lower substrate. Ball bond allows the use of especially small bonding pads which are especially close to adjacent microelectronic structures which limit the use of different bonding techniques which have shallow take off angles.
摘要翻译： 该公开的技术描述了通过使用超声波接合能量而不加热下基板的焊盘，实现与1/1000英寸相比具有较小直径的金线球接合的方法和系统。 球接合允许使用特别小的接合焊盘，这些焊盘特别靠近相邻的微电子结构，这限制了使用具有较浅起飞角度的不同接合技术。
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公开(公告)号：KR1020090132570A
公开(公告)日：2009-12-30
申请号：KR1020090108463
申请日：2009-11-11
申请人： 닛토덴코 가부시키가이샤
IPC分类号： C09J7/00 , H01L21/027
CPC分类号： H01L24/83 , H01L21/6836 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L2221/68327 , H01L2224/05599 , H01L2224/274 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83855 , H01L2224/83885 , H01L2224/85001 , H01L2224/85099 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06575 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/0635 , H01L2224/78 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , C09J7/35
摘要： PURPOSE: A thermosetting die bonding film is provided to improve adhesion with objects, to prevent the generation of air gap, and to manufacture a semiconductor device with high reliability at high yield. CONSTITUTION: A thermosetting die bonding film used in the manufacture of a semiconductor device comprises 5-15 weight % thermoplastic resin component and 45-55 weight % thermosetting resin component as a main component. The die bonding film has 400-2500 Pa·s of melt viscosity at 100 °C before thermocuring and 10 MPa or more of tensile storage elastic modulus at 250 °C after thermocuring.
摘要翻译： 目的：提供一种热固性芯片接合膜，以提高与物体的粘附性，防止产生气隙，并以高产率制造高可靠性的半导体器件。 构成：用于制造半导体装置的热固性芯片接合膜包括5-15重量％的热塑性树脂组分和45-55重量％的热固性树脂组分作为主要组分。 芯片接合膜在热固化之前的100℃下具有400-2500Pa·s的熔融粘度，在热固化后在250℃下具有10MPa以上的拉伸储存弹性模量。
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