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公开(公告)号：US08303715B2
公开(公告)日：2012-11-06
申请号：US12183763
申请日：2008-07-31
CPC分类号： H01L21/67742 , H01L21/67109 , H01L21/67248 , H01L21/67754 , H01L21/68742
摘要： A high throughput thermal treatment system for processing a plurality of substrates is described. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in a dry, non-plasma environment.
摘要翻译： 描述了用于处理多个基板的高通量热处理系统。 热处理系统被配置为热处理在干燥的非等离子体环境中化学处理的多个基板。
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公开(公告)号：US07461614B2
公开(公告)日：2008-12-09
申请号：US10705224
申请日：2003-11-12
IPC分类号： C23C4/10 , H01L21/205
CPC分类号： H01J37/32633 , H01J37/32834 , H01L21/67069
摘要： A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.
摘要翻译： 构造成在等离子体处理系统中耦合到衬底保持器的挡板组件包括具有一个或多个开口以允许气体在其中通过的挡板，其中挡板与衬底保持器的联接有利于自动 - 等离子体处理系统中的挡板的重心。 例如，安装在基板保持器中的定心环可以包括配置成与挡板上的配合特征联接的定心特征。 在初始组装等离子体处理系统之后，挡板可以在等离子体处理系统内更换并居中，而不会拆卸和重新组装衬底支架。
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3.发明授权Electronic device processing equipment having contact gasket between chamber parts 失效电子设备处理设备在室部件之间具有接触垫片公开(公告)号：US06695318B2
公开(公告)日：2004-02-24
申请号：US09760853
申请日：2001-01-17
IPC分类号： F16J1502
CPC分类号： H01J37/32458 , H01J37/32477
摘要： An arrangement for improved thermal and/or electrical coupling between parts disposed in electronic device processing equipment is provided. In an illustrated embodiment, an improved coupling between a chamber liner and a chamber wall is provided which can be utilized in semiconductor processing equipment. The arrangement includes a compressible coupling or gasket which is compressed between a wedge ring and the chamber wall. The chamber liner is coupled to the wedge ring, so that the chamber liner is coupled to the chamber wall by way of the wedge ring and compressible coupling.
摘要翻译： 提供了一种用于改善设置在电子设备处理设备中的部件之间的热和/或电耦合的装置。 在图示的实施例中，提供了腔室衬套和室壁之间的改进的联接，其可用于半导体加工设备中。 该装置包括在楔形环和腔室壁之间被压缩的可压缩联接器或垫圈。 腔室衬套联接到楔形环，使得腔室衬套通过楔环和可压缩联接件联接到腔室壁。
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公开(公告)号：US06558506B1
公开(公告)日：2003-05-06
申请号：US09889582
申请日：2001-10-24
申请人： Richard J. Freeman , Jay R. Wallace , Yoichi Kurono , Arthur H. Laflamme, Jr. , Louise Smith Barriss , Tadashi Onishi
发明人： Richard J. Freeman , Jay R. Wallace , Yoichi Kurono , Arthur H. Laflamme, Jr. , Louise Smith Barriss , Tadashi Onishi
IPC分类号： H01L2100
CPC分类号： H01L21/6719 , H01L21/67063 , H01L21/67126 , H01L21/67167 , H01L21/67196
摘要： The present invention provides an etching system having a plurality of etching chambers (16, 18, 20) disposed about a transfer chamber (14), wherein the etching chambers are adapted to be selectively mounted at different positions with respect to the transfer chamber.
摘要翻译： 本发明提供了一种蚀刻系统，其具有围绕传送室（14）设置的多个蚀刻室（16,18,20），其中蚀刻室适于选择性地安装在相对于传送室的不同位置处。
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公开(公告)号：US07651583B2
公开(公告)日：2010-01-26
申请号：US10860149
申请日：2004-06-04
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67178 , H01L21/6719 , H01L21/67751
摘要： A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.
摘要翻译： 一种用于化学氧化物去除的处理系统和方法，其中所述处理系统包括处理室，所述处理室具有构造成化学处理基板的下室部分和被配置为热处理所述基板的上室部分，以及被配置为运输所述基板提升组件 底部在下腔室部分和上腔室部分之间。 下室部分包括化学处理环境，其提供用于支撑用于化学处理的基板的温度受控的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 上室部分包括提供加热组件的热处理环境，该加热组件被配置为提升衬底的温度。
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公开(公告)号：US20090226633A1
公开(公告)日：2009-09-10
申请号：US12470132
申请日：2009-05-21
IPC分类号： B05D3/14 , H01L21/306
CPC分类号： H01L21/67748 , C25D11/02 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A chemical oxide removal (COR) processing system is presented, wherein the COR processing system includes a first treatment chamber and a second treatment chamber. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber having a protective barrier. The second treatment chamber comprises a heat treatment chamber that provides a temperature-controlled chamber having a protective barrier.
摘要翻译： 提出了一种化学氧化物去除（COR）处理系统，其中COR处理系统包括第一处理室和第二处理室。 第一处理室包括化学处理室，其提供具有保护屏障的温度控制室。 第二处理室包括提供具有保护屏障的温度控制室的热处理室。
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公开(公告)号：US08409399B2
公开(公告)日：2013-04-02
申请号：US12470132
申请日：2009-05-21
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67748 , C25D11/02 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A chemical oxide removal (COR) processing system is presented, wherein the COR processing system includes a first treatment chamber and a second treatment chamber. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber having a protective barrier. The second treatment chamber comprises a heat treatment chamber that provides a temperature-controlled chamber having a protective barrier.
摘要翻译： 提出了一种化学氧化物去除（COR）处理系统，其中COR处理系统包括第一处理室和第二处理室。 第一处理室包括化学处理室，其提供具有保护屏障的温度控制室。 第二处理室包括提供具有保护屏障的温度控制室的热处理室。
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公开(公告)号：US20100025368A1
公开(公告)日：2010-02-04
申请号：US12183763
申请日：2008-07-31
CPC分类号： H01L21/67742 , H01L21/67109 , H01L21/67248 , H01L21/67754 , H01L21/68742
摘要： A high throughput thermal treatment system for processing a plurality of substrates is described. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in a dry, non-plasma environment.
摘要翻译： 描述了用于处理多个基板的高通量热处理系统。 热处理系统被配置为热处理在干燥的非等离子体环境中化学处理的多个基板。
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公开(公告)号：US07964058B2
公开(公告)日：2011-06-21
申请号：US11126369
申请日：2005-05-11
IPC分类号： C23F1/00 , H01L21/306 , C23C16/52
CPC分类号： H01L21/67748 , C23C16/4405 , C25D11/02 , C25D11/026 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67126 , H01L21/67207 , H01L21/67248 , H01L21/67253
摘要： A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.
摘要翻译： 一种用于化学处理衬底的处理系统和方法，其中所述处理系统包括温度控制的化学处理室和用于支撑用于化学处理的衬底的独立温度控制的衬底保持器。 衬底保持器与化学处理室隔热。 在受控条件下，包括壁温，表面温度和气体压力，将基底暴露于无等离子体的气态化学物质。 衬底的化学处理化学改变衬底上的暴露表面。
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公开(公告)号：US07743731B2
公开(公告)日：2010-06-29
申请号：US11392949
申请日：2006-03-30
申请人： Takashi Enomoto , Masaaki Hagihara , Akiteru Ko , Shinji Hamamoto , Masafumi Urakawa , Arthur H. Laflamme, Jr. , Edward Heller
发明人： Takashi Enomoto , Masaaki Hagihara , Akiteru Ko , Shinji Hamamoto , Masafumi Urakawa , Arthur H. Laflamme, Jr. , Edward Heller
IPC分类号： C23C16/50 , C23C16/505 , C23C16/509 , C23C16/06 , C23C16/22
CPC分类号： H01L21/32137 , H01J37/3244 , H01J37/32449 , H01L21/32136 , H01L21/67069
摘要： A gas injection system includes a diffuser to distribute a process gas in a processing chamber. The gas injection system may be utilized in a polysilicon etching system involving corrosive process gases.
摘要翻译： 气体注入系统包括用于在处理室中分配处理气体的扩散器。 气体注入系统可以用于涉及腐蚀性工艺气体的多晶硅蚀刻系统中。
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