公开(公告)号：US11921835B2

公开(公告)日：2024-03-05

申请号：US16982099

申请日：2019-03-18

Applicant: Crocus Technology SA

Inventor： Quentin Stainer ,  Myckael Mouchel ,  Yann Conraux

IPC: G06F21/00 ,  H04L29/06 ,  G06F21/44 ,  G06G7/12 ,  H04L9/32

CPC classification number: G06F21/44 ,  G06G7/12 ,  H04L9/3278

Abstract: A MLU-based magnetic device including a plurality of MLU-based magnetic cells, each MLU cell including a first ferromagnetic layer having a first magnetization, a second ferromagnetic layer having a second magnetization, and a spacing layer between the first and second ferromagnetic layers. An input device is configured for generating an input signal adapted for changing the orientation of the first magnetization relative to the second magnetization and vary a resistance of the MLU device. A bit line is configured for passing a sense signal adapted for measuring the resistance. A processing unit is configured for computing an electrical variation from the sense signal and outputting an electrical variation signature. The present disclosure further pertains to an authentication method for reading the MLU device.

公开(公告)号：US20210110023A1

公开(公告)日：2021-04-15

申请号：US16982099

申请日：2019-03-18

Applicant: Crocus Technology SA

Inventor： Quentin Stainer ,  Myckael Mouchel ,  Yann Conraux

IPC: G06F21/44 ,  H04L9/32 ,  G06G7/12

Abstract: A MLU-based magnetic device including a plurality of MLU-based magnetic cells, each MLU cell including a first ferromagnetic layer having a first magnetization, a second ferromagnetic layer having a second magnetization, and a spacing layer between the first and second ferromagnetic layers. An input device is configured for generating an input signal adapted for changing the orientation of the first magnetization relative to the second magnetization and vary a resistance of the MLU device. A bit line is configured for passing a sense signal adapted for measuring the resistance. A processing unit is configured for computing an electrical variation from the sense signal and outputting an electrical variation signature. The present disclosure further pertains to an authentication method for reading the MLU device.

公开(公告)号：US20200243127A1

公开(公告)日：2020-07-30

申请号：US16633775

申请日：2018-06-25

Applicant: Crocus Technology SA

Inventor： Jeremy Alvarez-Herault ,  Lucien Lombard ,  Quentin Stainer ,  Jeffrey Childress

IPC: G11C11/16 ,  H01F7/02 ,  H03K19/18

Abstract: An apparatus for generating a magnetic field including permanent magnets arranged in a plane, each magnet being spatially separated along the plane from the adjacent magnet by a predetermined spacing, each magnet having a magnetic polarity opposed to the polarity of the adjacent magnet such that a magnetic field of adjacent magnets is oriented substantially perpendicular to the plane and in opposite directions, each magnet being spatially separated in the plane from the adjacent magnet by a nonmagnetic material. A method for programming a magnetic device or sensor device using the apparatus is also described.

公开(公告)号：US20180240967A1

公开(公告)日：2018-08-23

申请号：US15956376

申请日：2018-04-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L21/311

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  G11C2211/5615 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

公开(公告)号：US20180197591A1

公开(公告)日：2018-07-12

申请号：US15741805

申请日：2016-06-27

Applicant: CROCUS Technology SA

Inventor： Quentin STAINER

IPC: G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01F10/32

CPC classification number: G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic memory device including a plurality of magnetic units, each unit including a first and second magnetic tunnel junctions-electrically connected in series by a current line and a strap. Each junction includes a first and second storage layer having a first and second storage magnetization and a first sense magnetic layer having a first and second senses magnetization. A field line is configured to provide an input signal generating a first and second magnetic field for varying the first and second sense magnetization. Each magnetic unit is provided with a data state such that the first and second storage magnetizations are aligned in opposed directions. The first and second magnetic field are adapted for varying respectively the first and second sense magnetization in a first and second direction opposed to the first direction.

公开(公告)号：US09989599B2

公开(公告)日：2018-06-05

申请号：US15028114

申请日：2014-10-01

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A magnetic sensor cell includes a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A magnetic device is configured for providing a sense magnetic field for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The magnetic sensor cell can be used for sensing an external magnetic field including a component oriented parallel to the plane of the sense layer and a component oriented perpendicular to the plane of the sense layer.

公开(公告)号：US09983275B2

公开(公告)日：2018-05-29

申请号：US15028103

申请日：2014-10-01

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: G01R33/02 ,  G01R33/09

CPC classification number: G01R33/098

Abstract: Method for sensing an external magnetic field using a magnetic sensor cell including: a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A field line is configured for passing a field current for providing a sense magnetic field adapted for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The external magnetic field includes an in-plane component oriented parallel to the plane of the sense layer and an out-of-plane component perpendicular to the plane of the sense layer. The method includes sensing the out-of-plane component; and sensing the in-plane component.

公开(公告)号：US09917247B2

公开(公告)日：2018-03-13

申请号：US15347327

申请日：2016-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Crocus Technology SA

Inventor： Anthony J. Annunziata ,  Lucian Prejbeanu ,  Philip L. Trouilloud ,  Daniel C. Worledge

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  G11C14/00 ,  G11C11/56 ,  H01L29/82 ,  G11C11/16 ,  G01R33/06 ,  H01L43/10

CPC classification number: H01L43/02 ,  G01R33/066 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C14/0036 ,  G11C14/0081 ,  H01L27/222 ,  H01L27/226 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.

公开(公告)号：US09875781B2

公开(公告)日：2018-01-23

申请号：US15116959

申请日：2015-02-03

Applicant: CROCUS Technology SA

Inventor： Quentin Stainer

IPC: G11C15/02 ,  G11C11/16 ,  G11C11/56 ,  H01L27/22 ,  H01F10/32

CPC classification number: G11C11/1675 ,  G11C11/5607 ,  G11C11/5628 ,  G11C15/02 ,  H01F10/3272 ,  H01L27/222

Abstract: A method for writing a MRAM device, including magnetic tunnel junction with a storage layer, a sense layer, and a spacer layer between the storage and sense layers. At least one of the storage and sense layers has a magnetic anisotropy axis. The method includes an initialization step including: applying an initial heating current pulse for heating the magnetic tunnel junction to a temperature above a threshold temperature at which a storage magnetization is freely orientable, providing an initial resultant magnetic field for adjusting the storage magnetization in an initial direction oriented along the magnetic anisotropy axis. The method allows performing the writing step with improved reproducibly.

公开(公告)号：US09818465B2

公开(公告)日：2017-11-14

申请号：US15022766

申请日：2014-09-08

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: G11C15/02 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

CPC classification number: G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A self-referenced MRAM cell comprises a first portion of a magnetic tunnel junction including a storage layer; a second portion of the magnetic tunnel junction portion including a tunnel barrier layer, a sense layer and a seed layer; the seed layer comprising a material having high spin-orbit coupling such that passing a sense current along the plane of the sense layer and/or seed layer exerts a spin-orbit torque adapted for switching a sense magnetization of the sense layer. A memory device comprising a plurality of the MRAM cells and a method for operating the memory device are also disclosed.