公开(公告)号：US20190097103A1

公开(公告)日：2019-03-28

申请号：US16197103

申请日：2018-11-20

申请人： Chen-Fu CHU

发明人： Chen-Fu CHU

IPC分类号： H01L33/56 ,  H01L33/50 ,  H01L21/78 ,  H01L33/36 ,  H01L33/44 ,  H01L27/15 ,  H01L21/304 ,  H01L33/00 ,  H01L33/52 ,  C23C14/14 ,  C23C14/34 ,  C23C16/455 ,  C23C16/50 ,  H01L25/075 ,  H01L33/62 ,  H01L25/16 ,  H01S5/022 ,  H01L33/32 ,  B05C9/14 ,  B05C9/12 ,  B05C5/02 ,  H01L31/16 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64

摘要： A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.

公开(公告)号：US08546818B2

公开(公告)日：2013-10-01

申请号：US13401446

申请日：2012-02-21

申请人： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

发明人： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L29/22 ,  H01L31/072 ,  H01L33/00

CPC分类号： H01L33/14 ,  H01L27/15 ,  H01L33/38 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

摘要翻译： 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供电流引导结构，包括相邻的高和低接触区域。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US08507302B1

公开(公告)日：2013-08-13

申请号：US11548624

申请日：2006-10-11

申请人： Chen-Fu Chu ,  Hao-Chun Cheng ,  Trung Tri Doan ,  Feng-Hsu Fan

发明人： Chen-Fu Chu ,  Hao-Chun Cheng ,  Trung Tri Doan ,  Feng-Hsu Fan

IPC分类号： H01L21/301

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 用于制造金属的装置，例如垂直发光二极管（VLED）器件，功率器件，激光二极管，及垂直腔表面发射激光器件的技术，提供了。 相应地产生的器件可以受益于更高的收率和比常规的金属器件，如发光二极管的更高的亮度和增加的热导率增强的性能。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：USD685334S1

公开(公告)日：2013-07-02

申请号：US29419098

申请日：2012-04-25

申请人： Chen-Fu Chu ,  Chao-Chen Cheng

设计人： Chen-Fu Chu ,  Chao-Chen Cheng

公开(公告)号：US08466479B2

公开(公告)日：2013-06-18

申请号：US12986946

申请日：2011-01-07

申请人： Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

发明人： Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/22

摘要： Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

摘要翻译： 公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

公开(公告)号：US08450758B2

公开(公告)日：2013-05-28

申请号：US12939142

申请日：2010-11-03

申请人： Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

发明人： Wen-Huang Liu ,  Li-Wei Shan ,  Chen-Fu Chu

IPC分类号： H01L33/38

CPC分类号： H01L33/60 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405

摘要： A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

摘要翻译： 具有向外定位的金属电极的高亮度垂直发光二极管（LED）装置。 LED器件通过以下方式形成：使用诸如物理气相沉积（PVD），化学气相沉积（CVD），蒸发，电镀或沉积法的沉积方法在LED外延结构的表面的边缘上形成金属电极 其任何组合; 然后执行包装过程。 LED的组成可以是氮化物，磷化物或砷化物。 本发明的LED具有以下优点：提高电流扩散性能，降低金属电极的光吸收，增加亮度，提高效率，从而提高能量效率。 金属电极位于器件的边缘和发光侧。 金属电极具有两个侧壁，其中一个侧壁可以从另一个侧壁接收来自该装置的更多的发射光。

公开(公告)号：US08318519B2

公开(公告)日：2012-11-27

申请号：US11758475

申请日：2007-06-05

申请人： Trung Tri Doan ,  Chen-Fu Chu

发明人： Trung Tri Doan ,  Chen-Fu Chu

IPC分类号： H01L21/20

CPC分类号： H01L33/0079

摘要： Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

摘要翻译： 用于制造发光二极管的系统和方法包括在载体衬底上方形成多层外延结构; 在所述多层外延结构上沉积至少一个金属层; 去除载体衬底。

公开(公告)号：US20120097985A1

公开(公告)日：2012-04-26

申请号：US12909367

申请日：2010-10-21

申请人： Wen-Huang Liu ,  Chung-Che Dan ,  Yuan-Hsiao Chang ,  Hung-Jen Kao ,  Chen-Fu Chu ,  Hao-Chun Cheng

发明人： Wen-Huang Liu ,  Chung-Che Dan ,  Yuan-Hsiao Chang ,  Hung-Jen Kao ,  Chen-Fu Chu ,  Hao-Chun Cheng

IPC分类号： H01L33/48 ,  H01L33/52

CPC分类号： H01L33/54 ,  H01L25/0753 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting diode (LED) package includes a substrate, a light emitting diode (LED) die mounted to the substrate, a frame on the substrate, a wire bonded to the light emitting diode (LED) die and to the substrate, and a transparent dome configured as a lens encapsulating the light emitting diode (LED) die. A method for fabricating a light emitting diode (LED) package includes the steps of: providing a substrate; forming a frame on the substrate; attaching a light emitting diode (LED) die to the substrate; wire bonding a wire to the light emitting diode (LED) die and to the substrate; and dispensing a transparent encapsulation material on the frame configured to form a transparent dome and lens for encapsulating the light emitting diode (LED) die.

摘要翻译： 发光二极管（LED）封装包括：衬底，安装到衬底的发光二极管（LED）裸片，衬底上的框架，结合到发光二极管（LED）管芯和衬底的引线，以及 透明圆顶被配置为封装发光二极管（LED）裸片的透镜。 一种制造发光二极管（LED）封装的方法，包括以下步骤：提供衬底; 在基板上形成框架; 将发光二极管（LED）裸片附接到所述基板; 将导线引线连接到发光二极管（LED）管芯和衬底; 并且在所述框架上分配透明封装材料，所述框架被配置成形成用于封装所述发光二极管（LED）裸片的透明圆顶和透镜。

公开(公告)号：US08148733B2

公开(公告)日：2012-04-03

申请号：US13161254

申请日：2011-06-15

申请人： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

发明人： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L29/22 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/109 ,  H01L33/00 ,  H01L31/072

CPC分类号： H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

摘要翻译： 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US20110316034A1

公开(公告)日：2011-12-29

申请号：US12824163

申请日：2010-06-26

申请人： Trung Tri Doan ,  Chen-Fu Chu ,  Wen-Huang Liu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Fu-Hsien Wang

发明人： Trung Tri Doan ,  Chen-Fu Chu ,  Wen-Huang Liu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Fu-Hsien Wang

IPC分类号： H01L33/02 ,  H01L33/62 ,  H01L33/64 ,  H01L33/48

CPC分类号： H01L33/62 ,  H01L33/641 ,  H01L2224/73265 ,  H01L2933/0066

摘要： A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode. A method for fabricating the light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect.

摘要翻译： 发光二极管包括具有至少一个电隔离层的导热基板，该隔离层被配置为提供垂直电隔离和从基板的前侧（第一侧）到其后侧（第二侧）穿过基板的热传递路径。 发光二极管包括具有贯通互连的阳极和在基板上并排布置的具有通孔互连的阴极。 发光二极管还包括安装在阳极和阴极之间的衬底上的LED芯片。 一种制造发光二极管的方法包括以下步骤：提供具有电隔离层的导热衬底，在衬底的第一侧经由衬底并排形成阳极通孔和阴极，形成阳极 通过在阴极通孔中通过互连在阳极通孔和阴极之间的互连，通过互连将互连和阴极通过互连将衬底从衬底的第二侧延伸到阳极，并将LED芯片安装到与第一侧电连通的第一侧 阴极通过互连和阳极通过互连。