Solvent dispersible interpenetrating polymer networks
    5.
    发明授权
    Solvent dispersible interpenetrating polymer networks 失效
    溶剂分散互穿聚合物网络

    公开(公告)号:US5985998A

    公开(公告)日:1999-11-16

    申请号:US248565

    申请日:1999-02-11

    摘要: A novel class of interpenetrating polymer networks which are dispersible in conventional coating solvents is disclosed. Such dispersions are useful in preparing protective and/or decorative film coatings and are particularly useful in photosensitive or imaging formulations such as photoresists, solder masks and the like. These polymer networks are comprised of at least two interpenetrating crosslinked polymers. At least one of the polymer networks is formed by polymerization in a solvent. In one embodiment of this invention, at least one polymer network is prepared from macromers to produce a polymer system having functionalized branch or graft linear segments. The solvent dispersible interpenetrating networks of this invention are particularly useful as binders in addition polymerizable photosensitive compositions containing crosslinking monomers such as solder masks. Upon exposure to actinic radiation and suitable thermal curing, solder mask coatings of such photosensitive compositions form multiple, e.g., triple, interpenetrating polymer networks having superior toughness and flexibility.

    摘要翻译: 公开了可分散在常规涂层溶剂中的新颖的互穿聚合物网络。 这种分散体可用于制备保护性和/或装饰性膜涂层,并且特别适用于感光或成像制剂,例如光致抗蚀剂,阻焊剂等。 这些聚合物网络由至少两个互穿交联聚合物组成。 通过在溶剂中聚合形成聚合物网络中的至少一个。 在本发明的一个实施方案中,由大分子单体制备至少一种聚合物网络以产生具有官能化的支链或接枝线性链段的聚合物体系。 本发明的溶剂可分散的互穿网络特别可用作含有交联单体如焊料掩模的加成可聚合光敏组合物中的粘合剂。 在曝光于光化辐射和合适的热固化之后,这种光敏组合物的焊接掩模涂层形成具有优异韧性和柔韧性的多重例如三重互穿聚合物网络。

    Bases and surfactants and their use in photoresist compositions for microlithography
    7.
    发明申请
    Bases and surfactants and their use in photoresist compositions for microlithography 审中-公开
    碱和表面活性剂及其在光刻胶组合物中用于微光刻的用途

    公开(公告)号:US20050100814A1

    公开(公告)日:2005-05-12

    申请号:US10399375

    申请日:2001-11-26

    摘要: A photoresist composition having: (A) a polymer selected from the group consisting of: (a) a fluorine-containing copolymer having a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: —C(Rf)(Rf′)OH, wherein Rf and Rf′ are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is 2 to 10; (d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole) or CX2═CY2 where X═F or CF3 and Y═—H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CX2═CY2; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; (B) at least one photoactive component; and (C) a functional compound selected from the group consisting of a base and a surfactant. The polymer may have an absorption coefficient of less than about 5.0m?−1 at a wavelength of about 157 nm. These photoresist compositions have improved imaging properties.

    摘要翻译: 一种光致抗蚀剂组合物,其具有:(A)选自以下的聚合物:(a)具有衍生自至少一种烯键式不饱和化合物的重复单元的含氟共聚物,其特征在于至少一种烯属不饱和化合物是多环的; (b)含有保护的酸基团的支化聚合物,所述聚合物包含一个或多个沿着线性主链部分化学连接的支链段; (c)具有至少一个具有以下结构的氟代醇基的含氟聚合物:-C(R f)f(R f)f OH,其中R f 且R 1和R 2'是相同或不同的1至约10个碳原子的氟代烷基或一起为(CF 2 N 2)n - 其中n为2至10; (d)全氟(2,2-二甲基-1,3-间二氧杂环戊烯)或CX 2 -CY 2的无定形乙烯基均聚物,其中XF或CF 3, 和/或Y-H或全氟(2,2-二甲基-1,3-二氧杂环戊烯)和CX 2 -CY 2 N 2的无定形乙烯基共聚物。 和(e)由取代或未取代的乙烯基醚制备的含腈/氟代醇的聚合物; (B)至少一种光活性组分; 和(C)选自碱和表面活性剂的官能化合物。 在约157nm的波长下,该聚合物的吸收系数可以小于约5.0±0.1λ。 这些光刻胶组合物具有改善的成像性能

    Protecting groups in polymers, photoresists and processes for microlithography
    8.
    发明申请
    Protecting groups in polymers, photoresists and processes for microlithography 有权
    聚合物,光致抗蚀剂和微光刻工艺中的保护基团

    公开(公告)号:US20050191579A1

    公开(公告)日:2005-09-01

    申请号:US11113695

    申请日:2005-04-25

    摘要: The invention relates to a photoresist composition having a protecting group and a protected material incorporated in a cyclic chemical structure. In this invention a protected material has a cyclic ether group or cyclic ester group as a protecting group. A specific example of a cyclic ether group is an alkylene oxide, such as an oxetane group, substituted with one or more fluorinated alkyl groups. A specific example of a cyclic ester is a lactone which may be substituted with methyl groups. The photoresist composition further includes a photoactive component. The photoresist composition of this invention has a high transparency to ultraviolet radiation, particularly at short wavelengths such as 193 nm and 157 nm.

    摘要翻译: 本发明涉及一种具有保护基和掺入环状化学结构的保护材料的光致抗蚀剂组合物。 在本发明中,保护材料具有环状醚基或环状酯基作为保护基。 环醚基的具体实例是被一个或多个氟化烷基取代的环氧烷,例如氧杂环丁烷基。 环酯的具体实例是可被甲基取代的内酯。 光致抗蚀剂组合物还包括光活性组分。 本发明的光致抗蚀剂组合物对紫外线辐射具有高透明度,特别是在短波长如193nm和157nm处。

    Photoresists and processes for microlithography
    10.
    发明申请
    Photoresists and processes for microlithography 失效
    用于微光刻的光致抗蚀剂和工艺

    公开(公告)号:US20050058940A1

    公开(公告)日:2005-03-17

    申请号:US10970133

    申请日:2004-10-21

    IPC分类号: G03F7/004 G03F7/039 G03C1/76

    摘要: Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.

    摘要翻译: 公开了用于紫外(UV)和紫色的微光刻的正光致抗蚀剂和相关工艺。 光致抗蚀剂包括(a)含有保护的酸基的支链聚合物和(b)至少一种光酸产生剂。 光致抗蚀剂在整个UV中具有高透明度,良好的显影性能,高耐等离子体蚀刻性和其它所需性质,并且可用于近紫外,远紫外和极紫外,特别是波长小于或等于365nm的微光刻。