公开(公告)号：US10566462B2

公开(公告)日：2020-02-18

申请号：US12512285

申请日：2009-07-30

申请人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedernostheide

发明人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/861

摘要： A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, and a plurality of third semiconductor regions of the first conductivity type at least partially arranged in the first semiconductor region and having a doping concentration which is higher than the first doping concentration. Each of the third semiconductor regions is provided with at least one respective junction termination structure.

公开(公告)号：US09269769B2

公开(公告)日：2016-02-23

申请号：US12324309

申请日：2008-11-26

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/66 ,  H01L29/739 ,  H01L29/74

CPC分类号： H01L27/0255 ,  H01L21/324 ,  H01L27/1027 ,  H01L29/0692 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1012 ,  H01L29/1016 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66363 ,  H01L29/7395 ,  H01L29/7428 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.

摘要翻译： 包括短路结构的半导体部件。 一个实施例提供了具有由掺杂半导体材料构成的半导体本体的半导体部件。 半导体本体包括与第一导电类型互补的第一导电类型的第一区和第二导电类型的第二区，与第一区相邻的第二区。 第一区域和第二区域耦合到高度导电的层。 第二导电类型的连接区域布置在第二区域和导电层之间。

公开(公告)号：US08859409B2

公开(公告)日：2014-10-14

申请号：US13613985

申请日：2012-09-13

申请人： Thomas Neidhart ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Alexander Susiti

发明人： Thomas Neidhart ,  Franz Josef Niedernostheide ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Alexander Susiti

IPC分类号： H01L21/425 ,  H01L29/167 ,  H01L29/36 ,  H01L29/32 ,  H01L29/861 ,  H01L21/265

CPC分类号： H01L29/167 ,  H01L21/265 ,  H01L21/26506 ,  H01L29/0603 ,  H01L29/32 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/7801 ,  H01L29/861

摘要： A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.

摘要翻译： 半导体部件包括具有第一侧和与第一侧相对的第二侧的半导体本体。 在半导体本体中，由氧络合物构成的掺杂剂形成掺杂剂区域。 掺杂剂区域沿着从第一侧到第二侧的方向具有至少10μm的长度的部分L延伸。 掺杂剂区域在部分L上的氧浓度范围为1×1017cm-3至5×1017cm-3。

公开(公告)号：US08829562B2

公开(公告)日：2014-09-09

申请号：US13556335

申请日：2012-07-24

申请人： Hans-Joachim Schulze ,  Franz Hirler ,  Hans-Peter Felsl ,  Franz-Josef Niedernostheide

发明人： Hans-Joachim Schulze ,  Franz Hirler ,  Hans-Peter Felsl ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/66 ,  H01L21/336

CPC分类号： H01L29/66 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/408 ,  H01L29/42368 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the trench. The dielectric structure includes a high-k dielectric in a lower part of the trench. The high-k dielectric includes a dielectric constant higher than that of SiO2. An extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench.

摘要翻译： 半导体器件包括从第一表面延伸到半导体本体的漂移区的沟槽。 半导体器件还包括在沟槽中的栅极电极和与沟槽的侧壁相邻的主体区域。 半导体器件还包括沟槽中的电介质结构。 电介质结构包括沟槽下部的高k电介质。 高k电介质包括比SiO2更高的介电常数。 在垂直于第一表面的垂直方向上的高k电介质的延伸在沟槽的底侧和体区的底侧与沟槽的侧壁相邻的水平之间被限制。

公开(公告)号：US08482062B2

公开(公告)日：2013-07-09

申请号：US13610240

申请日：2012-09-11

申请人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

发明人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

公开(公告)号：US20120112242A1

公开(公告)日：2012-05-10

申请号：US13237097

申请日：2011-09-20

申请人： Hans-Joachim Schulze ,  Franz Josef Niedernostheide ,  Reinhart Job

发明人： Hans-Joachim Schulze ,  Franz Josef Niedernostheide ,  Reinhart Job

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L29/045 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/3003 ,  H01L29/267 ,  H01L29/7842

摘要： A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and a third, strained monocrystalline region between the first region and the second region.

摘要翻译： 由半导体材料构成的半导体本体包括沿基准方向具有第一晶格常数的半导体材料的第一单晶区域，沿着沿着基准方向具有第一晶格常数的第一晶格常数不同于第一晶格常数 参考方向，以及在第一区域和第二区域之间的第三应变单晶区域。

公开(公告)号：US08101506B2

公开(公告)日：2012-01-24

申请号：US12719487

申请日：2010-03-08

申请人： Hans-Joachim Schulze ,  Josef Lutz ,  Franz-Josef Niedernostheide ,  Ralf Siemieniec

发明人： Hans-Joachim Schulze ,  Josef Lutz ,  Franz-Josef Niedernostheide ,  Ralf Siemieniec

IPC分类号： H01L21/322

CPC分类号： H01L21/266 ,  H01L21/263 ,  H01L21/26506 ,  H01L29/0878 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395

摘要： A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

摘要翻译： 一种用于在半导体本体中制造掩埋的n掺杂半导体区的方法。 在一个实施例中，该方法包括至少在要在半导体本体中掺杂的区域中产生氧浓度。 半导体体经由一侧用非掺杂粒子照射，以在要掺杂的区域中产生缺陷。 进行热处理。 本发明还涉及具有场停止区域的半导体部件。

公开(公告)号：US08035195B2

公开(公告)日：2011-10-11

申请号：US12126751

申请日：2008-05-23

申请人： Franz Josef Niedernostheide ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze

发明人： Franz Josef Niedernostheide ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze

IPC分类号： H01L29/866

CPC分类号： H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/6609 ,  H01L29/868

摘要： A semiconductor element includes a semiconductor layer having a first doping density, a metallization, and a contact area located between the semiconductor layer and the metallization. The contact area includes at least one first semiconductor area that has a second doping density higher than the first doping density, and at least one second semiconductor area in the semiconductor layer. The second semiconductor area is in contact with the metallization and provides lower ohmic resistance to the metallization than a direct contact between the semiconductor layer and the metallization provides or would provide.

摘要翻译： 半导体元件包括具有第一掺杂密度，金属化以及位于半导体层和金属化之间的接触区域的半导体层。 接触区域包括至少一个具有高于第一掺杂浓度的第二掺杂密度的第一半导体区域和半导体层中的至少一个第二半导体区域。 与半导体层和提供或将要提供的金属化之间的直接接触相比，第二半导体区域与金属化接触并且提供比金属化更低的欧姆电阻。

公开(公告)号：US07884389B2

公开(公告)日：2011-02-08

申请号：US11651937

申请日：2007-01-10

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Uwe Kellner-Werdehausen ,  Reiner Barthelmess

IPC分类号： H01L29/74

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/66363 ,  H01L29/7428

摘要： Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method. The invention relates to a bipolar power semiconductor component comprising a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction (v). The p-doped emitter (8) has a number of heavily p-doped zones (82) having a locally increased p-type doping.

摘要翻译： 双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法。 本发明涉及一种双极功率半导体元件，包括半导体本体（1），其中p掺杂发射极（8），n掺杂基极（7），p掺杂基极（6）和n掺杂 主发射器（5）沿垂直方向（v）连续布置。 p掺杂发射极（8）具​​有多个具有局部增加的p型掺杂的高p掺杂区（82）。

公开(公告)号：US07842590B2

公开(公告)日：2010-11-30

申请号：US12110740

申请日：2008-04-28

申请人： Thomas Gutt ,  Frank Umbach ,  Hans Peter Felsl ,  Manfred Pfaffenlehner ,  Franz-Josef Niedernostheide ,  Holger Schulze

发明人： Thomas Gutt ,  Frank Umbach ,  Hans Peter Felsl ,  Manfred Pfaffenlehner ,  Franz-Josef Niedernostheide ,  Holger Schulze

IPC分类号： H01L21/425

CPC分类号： H01L29/7395 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/0611 ,  H01L29/0615 ,  H01L29/08 ,  H01L29/66083 ,  H01L29/861

摘要： A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.

摘要翻译： 一种通过激光退火制造半导体器件的方法。 一个实施例提供了具有第一表面和第二表面的半导体衬底。 第二表面布置成与第一表面相对。 第一掺杂剂在第二表面被引入半导体衬底中，使得其半导体衬底中的峰值掺杂浓度位于相对于第二表面的第一深度。 第二掺杂剂在第二表面被引入到半导体表面中，使得其半导体衬底中的峰值掺杂浓度相对于第二表面位于第二深度，其中第一深度大于第二深度。 至少通过将至少一个激光束脉冲引导到第二表面上来进行至少第一激光退火，以至少在第二表面上以部分熔化半导体衬底。