公开(公告)号：US10290906B2

公开(公告)日：2019-05-14

申请号：US15340995

申请日：2016-11-02

申请人： Jiaxiong Wang

发明人： Jiaxiong Wang

IPC分类号： H01M10/42 ,  H01M2/30 ,  H01M4/04 ,  H01M2/20 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0585 ,  H01M10/04 ,  H01M10/44

摘要： A flexible solid-state multiple-stacked planar lithium-ion battery module is provided. It comprises a number of lithium-ion battery groups that consist of back-to-back multiple-stacked electrochemical cells interconnected in parallel. Solid electrolytes are used in all of electrochemical cells. The battery groups are packed and sealed with flexible polymeric materials. The battery groups are combined into some battery sections. The positive and negative terminals of every battery group are connected to corresponding side terminals which are controlled with side switches. The positive terminals of the first battery groups in every battery section and the negative terminals of the last battery groups in every battery section are further connected to a positive rotary switch and a negative rotary switch, respectively. With these different switches and circuit control boxes, input and output voltages and currents of the battery module can be freely adjusted and controlled.

公开(公告)号：US08066865B2

公开(公告)日：2011-11-29

申请号：US12123372

申请日：2008-05-19

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D3/56

CPC分类号： C25D3/54 ,  C25D3/56 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  H01L31/20 ,  Y02E10/541

摘要： An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

摘要翻译： 提供电化学共沉积方法和平板（In，Ga）-Se膜均匀，无缺陷和平滑（In，Ga）-Se膜的溶液，其重复性和（In，Ga）与Se的摩尔比可控。 这样的层用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，本发明提供了一种碱性电沉积溶液，其包括In盐，Se酸或氧化物，作为In物质的络合剂的酒石酸盐，以及电沉积具有亚微米厚度的In-Se膜的溶剂 在导电表面上。

公开(公告)号：US07951280B2

公开(公告)日：2011-05-31

申请号：US12267488

申请日：2008-11-07

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D3/00 ,  C25D5/10 ,  C23C28/02 ,  C23C28/00 ,  C23C16/40

CPC分类号： C25D3/54 ,  C25D5/10

摘要： An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells.

摘要翻译： 提供了一种电化学沉积方法和电解质，以均匀，无缺陷和平滑的镓膜。 在优选的实施方案中，电解质可以包括包含水和至少一种单羟基醇，镓盐和酸的溶剂，以控制溶液的pH和电导率。 该方法在导电表面上电沉积具有亚微米厚度的镓膜。 这种镓层用于制造半导体和电子器件如薄膜太阳能电池。

公开(公告)号：US20100200050A1

公开(公告)日：2010-08-12

申请号：US12642709

申请日：2009-12-18

申请人： Serdar Aksu ,  Mustafa Pinarbasi ,  Jiaxiong Wang

发明人： Serdar Aksu ,  Mustafa Pinarbasi ,  Jiaxiong Wang

IPC分类号： C25D5/10 ,  H01L31/02

CPC分类号： C25D3/58 ,  C25D3/56 ,  C25D5/10

摘要： The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.

摘要翻译： 本发明提供一种形成IBIIIAIVA族太阳能电池吸收层的方法和前体结构。 该方法包括通过电沉积三种不同的膜在基底上形成前体层，然后使前体层与硒反应，在基底上形成IBIIIAVIA族化合物层，从而在基底上形成IBIIIAVIA族化合物层。 由前体层描述的三个膜在一个实施方案中包括包含铜，铟和镓的第一合​​金膜，在第一合金膜上形成的包含铜和硒的第二合金膜; 以及形成在第二合金膜上的硒膜。

公开(公告)号：US07507321B2

公开(公告)日：2009-03-24

申请号：US11535927

申请日：2006-09-27

申请人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

发明人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

IPC分类号： C25D3/00 ,  C25D3/56 ,  B22F7/00

CPC分类号： C25D3/54 ,  C25D3/56 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541

摘要： The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.

摘要翻译： 本发明涉及镓（Ga）电镀方法和化学镀以均匀，无缺陷和光滑的Ga膜，具有高电镀效率和重复性。 这样的层可以用于制造诸如薄膜太阳能电池的电子器件。 在一个实施方案中，本发明提供了一种用于在导体上施加的解决方案，该解决方案在将溶液电沉积在导体上时有助于包括Ga盐，络合剂，溶剂和具有亚微米厚度的Ga膜。 该溶液还可包括Cu盐和In盐中的一种或两种。

公开(公告)号：US08726835B2

公开(公告)日：2014-05-20

申请号：US13172826

申请日：2011-06-30

申请人： Jiaxiong Wang

发明人： Jiaxiong Wang

IPC分类号： B05B1/02 ,  B05C11/00

CPC分类号： H01L31/18 ,  C23C18/02 ,  C23C18/1204 ,  C23C18/1208 ,  H01L21/02485 ,  H01L21/02521 ,  H01L21/02557 ,  H01L21/02628 ,  H01L31/0749 ,  H01L31/1828 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

摘要： A chemical bath deposition apparatus is presented to prepare different thin films on plane substrates. In particular, it is useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This deposition apparatus deposits thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.

摘要翻译： 提出了一种化学浴沉积装置，以在平面基底上制备不同的薄膜。 特别地，在制造薄膜太阳能电池中沉积CdS或ZnS缓冲层是有用的。 该沉积装置将薄膜沉积在由传送带传送的垂直行进平面工件上。 沉积这些薄膜，将反应溶液从新鲜混合的样品中连续喷射到逐渐老化的形式，直到获得设计的厚度。 将基材和溶液加热至反应温度。 在沉积工艺期间，基板的前表面完全被喷涂的溶液覆盖，但是基板的背面保持干燥。 反应器内部的反应气氛可以与外部气氛隔离。 该设备旨在为化学处理产生最少量的废物溶液。

公开(公告)号：US08617916B1

公开(公告)日：2013-12-31

申请号：US13971850

申请日：2013-08-21

申请人： Jiaxiong Wang

发明人： Jiaxiong Wang

IPC分类号： H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0272 ,  H01L31/0312

CPC分类号： H01L31/18 ,  C23C18/02 ,  C23C18/1204 ,  C23C18/1208 ,  H01L21/02485 ,  H01L21/02521 ,  H01L21/02557 ,  H01L21/02628 ,  H01L31/0749 ,  H01L31/1828 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

摘要： A chemical bath deposition method is presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition apparatus deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited by continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The method is designed to generate a minimum amount of waste solutions for chemical treatments.

摘要翻译： 提出了一种化学浴沉积方法来在平面基板上制备不同的薄膜。 特别地，它们可用于在制造薄膜太阳能电池中沉积CdS或ZnS缓冲层。 该方法和沉积装置将薄膜沉积在由输送带输送的垂直行进平面工件上。 通过将反应溶液从新鲜混合样式连续喷射到逐渐老化的形式直到获得设计的厚度来沉积薄膜。 将基材和溶液加热至反应温度。 在沉积工艺期间，基板的前表面完全被喷涂的溶液覆盖，但是基板的背面保持干燥。 反应器内部的反应气氛可以与外部气氛隔离。 该方法旨在为化学处理产生最少量的废物溶液。

公开(公告)号：US20130330874A1

公开(公告)日：2013-12-12

申请号：US13971850

申请日：2013-08-21

申请人： Jiaxiong Wang

发明人： Jiaxiong Wang

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  C23C18/02 ,  C23C18/1204 ,  C23C18/1208 ,  H01L21/02485 ,  H01L21/02521 ,  H01L21/02557 ,  H01L21/02628 ,  H01L31/0749 ,  H01L31/1828 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

摘要： A chemical bath deposition method is presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition apparatus deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited by continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The method is designed to generate a minimum amount of waste solutions for chemical treatments.

摘要翻译： 提出了一种化学浴沉积方法来在平面基板上制备不同的薄膜。 特别地，它们可用于在制造薄膜太阳能电池中沉积CdS或ZnS缓冲层。 该方法和沉积装置将薄膜沉积在由输送带输送的垂直行进平面工件上。 通过将反应溶液从新鲜混合样式连续喷射到逐渐老化的形式直到获得设计的厚度来沉积薄膜。 将基材和溶液加热至反应温度。 在沉积工艺期间，基板的前表面完全被喷涂的溶液覆盖，但是基板的背面保持干燥。 反应器内部的反应气氛可以与外部气氛隔离。 该方法旨在为化学处理产生最少量的废物溶液。

公开(公告)号：US08444842B2

公开(公告)日：2013-05-21

申请号：US13306863

申请日：2011-11-29

申请人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

发明人： Jiaxiong Wang ,  Serdar Aksu ,  Bulent M. Basol

IPC分类号： C25D3/56

CPC分类号： C25D3/54 ,  C25D3/56 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  H01L31/20 ,  Y02E10/541

摘要： An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

摘要翻译： 提供电化学共沉积方法和平板（In，Ga）-Se膜均匀，无缺陷和平滑（In，Ga）-Se膜的溶液，其重复性和（In，Ga）与Se的摩尔比可控。 这样的层用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，本发明提供了一种碱性电沉积溶液，其包括In盐，Se酸或氧化物，作为In物质的络合剂的酒石酸盐，以及电沉积具有亚微米厚度的In-Se膜的溶剂 在导电表面上。

公开(公告)号：US20120288986A1

公开(公告)日：2012-11-15

申请号：US13347540

申请日：2012-01-10

申请人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

发明人： Serdar Aksu ,  Jiaxiong Wang ,  Bulent M. Basol

IPC分类号： H01L31/18

CPC分类号： H01L31/0322 ,  C25D3/54 ,  C25D3/56 ,  C25D5/10 ,  C25D7/126 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

摘要翻译： 提供了一种电化学沉积方法，以形成具有可重复性的均匀且连续的IIIA族材料丰富的薄膜。 这种薄膜用于制造半导体和电子器件如薄膜太阳能电池。 在一个实施方案中，IIIA族富含物质的薄膜沉积在包含20-90摩尔％的In和Ga中的至少一种和至少10摩尔％的包含Cu，Se，Te， Ag和S.中间层的厚度适于小于或等于IIIA族富含薄膜的厚度的约20％。