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公开(公告)号：US08617970B2
公开(公告)日：2013-12-31
申请号：US13582134
申请日：2011-02-23
申请人： Makoto Koto
发明人： Makoto Koto
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , B81B2203/0361 , B81C1/00095 , B81C2201/0181 , B82Y10/00 , B82Y40/00 , G01N27/4146 , G01N27/4148 , H01L21/02373 , H01L21/02521 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0676
摘要： The present invention relates to a method of manufacturing a semiconductor device by which the length of nanowires perpendicularly formed can be fabricated with high reproducibility. The method of manufacturing a semiconductor device includes the steps of forming a first layer; forming a stop layer on the first layer, the stop layer having a higher Young's modulus than the first layer; forming a recess by partially removing the first layer and the stop layer; growing nanowires in the recess; forming a planarizing layer; removing the planarizing layer to the level of the stop layer to expose the nanowires from the surface of the planarizing layer; and forming an electrode so as to be in contact with the upper ends of the nanowires.
摘要翻译： 本发明涉及一种制造半导体器件的方法，通过该方法可以以高再现性制造垂直形成的纳米线的长度。 制造半导体器件的方法包括形成第一层的步骤; 在所述第一层上形成停止层，所述停止层具有比所述第一层更高的杨氏模量; 通过部分去除第一层和止挡层形成凹部; 在休息中增长纳米线; 形成平坦化层; 将所述平坦化层去除到所述停止层的水平面以从所述平坦化层的表面露出所述纳米线; 并形成与纳米线的上端接触的电极。
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公开(公告)号：US07786495B2
公开(公告)日：2010-08-31
申请号：US12259420
申请日：2008-10-28
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.
摘要翻译： 可以在不分离金属反射层的情况下制造发光元件阵列。 发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在 基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。 多个发光元件部分被分成多个块。 每个块包括多个发光部分。 发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。
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公开(公告)号：US20110260325A1
公开(公告)日：2011-10-27
申请号：US13093721
申请日：2011-04-25
申请人： Makoto Koto
发明人： Makoto Koto
CPC分类号： H01L29/0676 , B82Y10/00 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L21/02664 , H01L29/775 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： To provide a semiconductor device including vertically formed nanowires in which parasitic capacitance is prevented from increasing and time constant associated with an operation speed is improved. Two different layers, which are a film thickness adjustment layer and a protective insulating layer, are provided as an interlayer insulating film between an electrode and a planar main surface of an electrically conductive substrate. This structural characteristic can reduce parasitic capacitance generated among the nanowires which electrically connect the planar main surface and the electrode to each other, the electrically conductive substrate, and the electrode, while controlling peel-off of a low dielectric film having a poor adhesion by separating the low dielectric film from the electrode with the protective insulating layer interposed therebetween.
摘要翻译： 提供包括垂直形成的纳米线的半导体器件，其中防止寄生电容增加，并且提高与操作速度相关联的时间常数。 作为导电性基板的电极和平面主面之间的层间绝缘膜，设置作为膜厚调整层和保护绝缘层的两个不同的层。 这种结构特性可以减少在将平面主表面和电极彼此电连接的纳米线之间产生的寄生电容，导电基底和电极，同时通过分离来控制具有差的粘附性的低介电膜的剥离 来自具有保护绝缘层的电极的低介电膜插入其间。
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4.发明授权公开(公告)号：US07399693B2
公开(公告)日：2008-07-15
申请号：US10566170
申请日：2005-06-15
IPC分类号： H01L21/44
CPC分类号： H01L21/76251 , H01L21/0237 , H01L21/02381 , H01L21/02395 , H01L21/0242 , H01L21/02455 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02573 , H01L21/0262 , H01L33/0079 , H01S5/0213 , H01S5/0217 , H01S5/32341
摘要： This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (Ia) formed in the semiconductor film forming step.
摘要翻译： 本发明提供一种使用新的分离技术及其应用的半导体膜制造方法。 本发明的半导体膜制造方法包括形成在种子基板（1）上异质生长分离层（2）的步骤的分离层，在分离时形成半导体膜（3）的半导体膜形成步骤 层（2）和通过使用分离层（2）将半导体膜（3）从形成在半导体膜形成步骤中的复合构件（Ia）分离的分离步骤。
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公开(公告)号：US09349881B2
公开(公告)日：2016-05-24
申请号：US14125561
申请日：2012-06-27
申请人： Ryota Sekiguchi , Makoto Koto
发明人： Ryota Sekiguchi , Makoto Koto
IPC分类号： H01L27/14 , H01L29/872 , H01L31/0224 , H01L31/108 , H01L27/146
CPC分类号： H01L29/872 , H01L27/14 , H01L27/14612 , H01L27/14643 , H01L29/0619 , H01L29/456 , H01L31/022408 , H01L31/108
摘要： Provided is a diode element, a detecting device, and the like which solve problems of a conventional lateral diode element. In the conventional element, a semiconductor interface appears in current path between two electrodes on a surface thereof, and thus noise caused by the interface is large. The diode element includes: a first-conductive-type low carrier concentration layer; a first-conductive-type high carrier concentration layer; and a Schottky electrode and an ohmic electrode which are formed on a semiconductor surface. The low carrier layer has a carrier concentration that is lower than that of the high carrier layer. The diode element includes a first-conductive-type impurity introducing region formed below the ohmic electrode, and includes a second-conductive-type impurity introducing region so as not to be in electrical contact with the Schottky electrode on the semiconductor surface between the Schottky and the ohmic. The second-conductive-type region is in contact with the first-conductive-type region.
摘要翻译： 提供了解决常规横向二极管元件的问题的二极管元件，检测装置等。 在常规元件中，半导体界面出现在其表面上的两个电极之间的电流路径中，因此由界面引起的噪声大。 二极管元件包括：第一导电型低载流子浓度层; 第一导电型高载流子浓度层; 以及形成在半导体表面上的肖特基电极和欧姆电极。 低载体层的载流子浓度低于高载流子层的载流子浓度。 二极管元件包括在欧姆电极下方形成的第一导电型杂质导入区域，并且包括第二导电型杂质导入区域，以便不与肖特基与肖特基二极管之间的半导体表面上的肖特基电极电接触 欧姆 第二导电型区域与第一导电型区域接触。
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公开(公告)号：US20140124885A1
公开(公告)日：2014-05-08
申请号：US14125561
申请日：2012-06-27
申请人： Ryota Sekiguchi , Makoto Koto
发明人： Ryota Sekiguchi , Makoto Koto
IPC分类号： H01L29/872 , H01L27/146 , H01L27/14
CPC分类号： H01L29/872 , H01L27/14 , H01L27/14612 , H01L27/14643 , H01L29/0619 , H01L29/456 , H01L31/022408 , H01L31/108
摘要： Provided is a diode element, a detecting device, and the like which solve problems of a conventional lateral diode element. In the conventional element, a semiconductor interface appears in current path between two electrodes on a surface thereof, and thus noise caused by the interface is large. The diode element includes: a first-conductive-type low carrier concentration layer; a first-conductive-type high carrier concentration layer; and a Schottky electrode and an ohmic electrode which are formed on a semiconductor surface. The low carrier layer has a carrier concentration that is lower than that of the high carrier layer. The diode element includes a first-conductive-type impurity introducing region formed below the ohmic electrode, and includes a second-conductive-type impurity introducing region so as not to be in electrical contact with the Schottky electrode on the semiconductor surface between the Schottky and the ohmic. The second-conductive-type region is in contact with the first-conductive-type region.
摘要翻译： 提供了解决常规横向二极管元件的问题的二极管元件，检测装置等。 在常规元件中，半导体界面出现在其表面上的两个电极之间的电流路径中，因此由界面引起的噪声大。 二极管元件包括：第一导电型低载流子浓度层; 第一导电型高载流子浓度层; 以及形成在半导体表面上的肖特基电极和欧姆电极。 低载体层的载流子浓度低于高载流子层的载流子浓度。 二极管元件包括在欧姆电极下方形成的第一导电型杂质导入区域，并且包括第二导电型杂质导入区域，以便不与肖特基与肖特基二极管之间的半导体表面上的肖特基电极电接触 欧姆 第二导电型区域与第一导电型区域接触。
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公开(公告)号：US20120329253A1
公开(公告)日：2012-12-27
申请号：US13582134
申请日：2011-02-23
申请人： Makoto Koto
发明人： Makoto Koto
IPC分类号： H01L21/205 , B82Y40/00
CPC分类号： H01L21/0262 , B81B2203/0361 , B81C1/00095 , B81C2201/0181 , B82Y10/00 , B82Y40/00 , G01N27/4146 , G01N27/4148 , H01L21/02373 , H01L21/02521 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0676
摘要： The present invention relates to a method of manufacturing a semiconductor device by which the length of nanowires perpendicularly formed can be fabricated with high reproducibility. The method of manufacturing a semiconductor device includes the steps of forming a first layer; forming a stop layer on the first layer, the stop layer having a higher Young's modulus than the first layer; forming a recess by partially removing the first layer and the stop layer; growing nanowires in the recess; forming a planarizing layer; removing the planarizing layer to the level of the stop layer to expose the nanowires from the surface of the planarizing layer; and forming an electrode so as to be in contact with the upper ends of the nanowires.
摘要翻译： 本发明涉及一种制造半导体器件的方法，通过该方法可以以高再现性制造垂直形成的纳米线的长度。 制造半导体器件的方法包括形成第一层的步骤; 在所述第一层上形成停止层，所述停止层具有比所述第一层更高的杨氏模量; 通过部分去除第一层和止挡层形成凹部; 在凹槽中生长纳米线; 形成平坦化层; 将所述平坦化层去除到所述停止层的水平面以从所述平坦化层的表面露出所述纳米线; 并形成与纳米线的上端接触的电极。
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8.发明申请FIELD-EFFECT TRANSISTOR INCLUDING MOVABLE GATE ELECTRODE AND SENSOR DEVICE INCLUDING FIELD-EFFECT TRANSISTOR 审中-公开包括可动门电极的场效应晶体管和包括场效应晶体管的传感器器件公开(公告)号：US20120293160A1
公开(公告)日：2012-11-22
申请号：US13469875
申请日：2012-05-11
申请人： Makoto Koto , Tetsunori Ojima
发明人： Makoto Koto , Tetsunori Ojima
CPC分类号： G01N27/4143
摘要： A field-effect transistor includes a semiconductor layer, at least two active regions disposed in the semiconductor layer, a source electrode in contact with one of the two active regions, a drain electrode in contact with the other active region; an insulating layer which is located between the source electrode and the drain electrode and which is disposed on the semiconductor layer, a gate electrode overlying the insulating layer, an adsorption site which is disposed between the gate electrode and the insulating layer and is used to adsorb a molecule, and a driving unit used to drive the gate electrode.
摘要翻译： 场效应晶体管包括半导体层，设置在半导体层中的至少两个有源区，与两个有源区中的一个接触的源电极，与另一有源区相接触的漏电极; 位于源电极和漏电极之间并且设置在半导体层上的绝缘层，覆盖绝缘层的栅电极，设置在栅电极和绝缘层之间的吸附位点，用于吸附 分子，以及用于驱动栅电极的驱动单元。
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公开(公告)号：US20090057693A1
公开(公告)日：2009-03-05
申请号：US12259420
申请日：2008-10-28
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.
摘要翻译： 可以在不分离金属反射层的情况下制造发光元件阵列。 发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在 基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。 多个发光元件部分被分成多个块。 每个块包括多个发光部分。 发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。
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公开(公告)号：US07491976B2
公开(公告)日：2009-02-17
申请号：US11782935
申请日：2007-07-25
IPC分类号： H01L33/00
CPC分类号： B21D43/09 , B21D43/021 , B41J2/45 , B65H23/1884 , H01L27/153 , Y10T83/0481 , Y10T83/148 , Y10T83/159
摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.
摘要翻译： 可以在不分离金属反射层的情况下制造发光元件阵列。 发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在 基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。 多个发光元件部分被分成多个块。 每个块包括多个发光部分。 发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。
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