公开(公告)号：US06372041B1

公开(公告)日：2002-04-16

申请号：US09478954

申请日：2000-01-07

Applicant: Hak Dong Cho ,  Sang Kyu Kang

Inventor： Hak Dong Cho ,  Sang Kyu Kang

IPC: C30B2512

CPC classification number: C30B25/00 ,  C30B25/02 ,  C30B29/406 ,  C30B29/60 ,  C30B29/64 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075

Abstract: A method and apparatus for homoepitaxial growth of freestanding, single bulk crystal Gallium Nitride (GaN) are provided, wherein a step of nucleating GaN in a reactor results in a GaN nucleation layer having a thickness of a few monolayers. The nucleation layer is stabilized, and a single bulk crystal GaN is grown from gas phase reactants on the GaN nucleation layer. The reactor is formed from ultra low oxygen stainless steel.

Abstract translation: 提供了独立的单体晶体氮化镓（GaN）的同质外延生长的方法和装置，其中在反应器中成核GaN的步骤产生具有几个单层厚度的GaN成核层。 成核层得到稳定化，单晶体GaN从GaN成核层上的气相反应物生长。 反应器由超低氧不锈钢形成。

公开(公告)号：US08726659B2

公开(公告)日：2014-05-20

申请号：US13189269

申请日：2011-07-22

Applicant: Dong Ho Chu ,  Sang Kyu Kang ,  Hyung Jin Kim ,  Guehyun Jung ,  Younsoo Im

Inventor： Dong Ho Chu ,  Sang Kyu Kang ,  Hyung Jin Kim ,  Guehyun Jung ,  Younsoo Im

IPC: F02B33/44 ,  F02M35/10

CPC classification number: F02M35/10157 ,  F02B33/44 ,  F02B33/446 ,  F02M35/10144 ,  F02M35/10236 ,  F02M35/10308 ,  Y02T10/144

Abstract: An intake system of an engine may include an intake line supplying an engine with air, an exhaust line that exhaust gas combusted in the cylinder is exhausted, a housing disposed on the intake line and a compressor is disposed therein, the compressor is operated by a turbine disposed on an exhaust line, a recirculation line that recirculates the air from the intake line of a downstream side of the compressor to the intake line of an upstream side of the compressor, and an anti surge valve disposed on the recirculation line to open/close the recirculation line, wherein a length of a first section (l) that is straight from the anti surge valve is longer than two times the outlet diameter (d) of the anti surge valve in the recirculation line that is formed from the anti surge valve to an upstream side of the compressor.

Abstract translation: 发动机的进气系统可以包括向发动机供应空气的进气管线，排出在气缸中燃烧的排气的排气管线，设置在进气管路上的壳体和设置在其中的压缩机，压缩机由 设置在排气管路上的涡轮机，将空气从压缩机的下游侧的进气管路再循环到压缩机的上游侧的进气管线的再循环管路，以及设置在再循环管路上的防喘振阀，以打开/ 关闭再循环管线，其中从防喘振阀直线的第一部分（1）的长度长于由防喘振形成的再循环管线中的防喘振阀的出口直径（d）的两倍 阀到压缩机的上游侧。

公开(公告)号：US08325544B2

公开(公告)日：2012-12-04

申请号：US12702809

申请日：2010-02-09

Applicant: Sang-kyu Kang ,  Ho-cheol Lee ,  Chi-sung Oh

Inventor： Sang-kyu Kang ,  Ho-cheol Lee ,  Chi-sung Oh

IPC: G11C7/00

CPC classification number: G11C7/1072 ,  G11C7/1006 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1066 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/4093 ,  G11C11/4096

Abstract: Provided is a synchronous dynamic random access memory (DRAM) semiconductor device including multiple output buffers, a strobe control unit and multiple strobe buffers. Each of the output buffers is configured to output one bit of data. The strobe control unit is configured to output multiple strobe control signals in response to an externally input signal. The strobe buffers are connected to the output buffers and the strobe control unit, and each of the strobe buffers is configured to output at least one strobe signal. At least some of the strobe buffers are activated in response to the strobe control signals, and the output buffers are activated in response to the strobe signals output by the activated strobe buffers.

Abstract translation: 提供了包括多个输出缓冲器，选通控制单元和多个选通缓冲器的同步动态随机存取存储器（DRAM）半导体器件。 每个输出缓冲器都配置为输出一位数据。 选通控制单元被配置为响应于外部输入信号输出多个选通控制信号。 选通缓冲器连接到输出缓冲器和选通控制单元，并且每个选通缓冲器被配置为输出至少一个选通信号。 至少一些选通缓冲器响应于选通控制信号被激活，并且输出缓冲器响应于被激活的选通缓冲器输出的选通信号被激活。

公开(公告)号：US20100232213A1

公开(公告)日：2010-09-16

申请号：US12711586

申请日：2010-02-24

Applicant: Hyong-Ryol Hwang ,  Chi-Sung Oh ,  Sang-Kyu Kang

Inventor： Hyong-Ryol Hwang ,  Chi-Sung Oh ,  Sang-Kyu Kang

IPC: G11C11/24 ,  G11C7/00 ,  G11C8/18

CPC classification number: G11C7/1048 ,  G11C7/1051 ,  G11C7/1069 ,  G11C7/22 ,  G11C7/222 ,  G11C11/4076 ,  G11C11/4091 ,  G11C11/4096

Abstract: Exemplary embodiments relate to a control signal driving device of a semiconductor device, including: a bus line; a converter receiving a first periodic control signal having the period (frequency) of a clock signal, converting the first periodic control signal into a converted control signal that has twice the period (half the frequency) of the clock signal, and outputting the converted control signal to the bus line; and a restoring unit connected to the opposite end of the bus line and receiving the converted control signal and restoring the converted control signal back into the first periodic control signal.

Abstract translation: 示例性实施例涉及半导体器件的控制信号驱动装置，包括：总线; 接收具有时钟信号的周期（频率）的第一周期性控制信号的转换器，将所述第一周期性控制信号转换成具有所述时钟信号的两倍周期（一半频率）的转换控制信号，并输出所述转换控制 信号到总线; 以及恢复单元，连接到总线的相对端并接收转换的控制信号，并将转换的控制信号恢复到第一周期性控制信号中。

公开(公告)号：US20050190932A1

公开(公告)日：2005-09-01

申请号：US10659750

申请日：2003-09-11

Applicant: Min-Hwan Woo ,  Duk-Gyoo Kim ,  Il-Sun Kang ,  Il-Hyung Lee ,  Sung-Heum Baek ,  Sang-Kyu Kang

Inventor： Min-Hwan Woo ,  Duk-Gyoo Kim ,  Il-Sun Kang ,  Il-Hyung Lee ,  Sung-Heum Baek ,  Sang-Kyu Kang

IPC: H04R3/00 ,  B60R11/02 ,  H03G3/00 ,  H03G3/20 ,  H04H1/00 ,  H04H40/36 ,  H04M1/60 ,  H04M11/00 ,  H04Q7/20 ,  H04Q7/38 ,  H04R5/00 ,  H04R5/04 ,  H04S1/00 ,  H04S7/00 ,  H04W88/02 ,  H04W92/08

CPC classification number: H04H40/36

Abstract: The present invention, related to a stereophonic apparatus having multiple switching function which mixes the sound signals output from multiple sound apparatuses to output them at once and enables to output multiply or selectively, has an audio signal generating unit for generating an audio signal, a sound signal controlling unit for outputting a sound signal to a sound signal input terminal of an external sound apparatus and controlling path of a sound signal output from a sound signal output terminal of said external sound apparatus, a mixing unit for generating a mixed sound signal by mixing an audio signal input from said audio signal generating unit and a sound signal input through said sound signal controlling unit, an audio amplifying unit for amplifying a mixed sound signal input from said mixing unit, and an output unit for outputting a mixed sound signal amplified by said audio amplifying unit.

Abstract translation: 本发明涉及一种具有多重切换功能的立体声装置，它具有一个音频信号产生单元，用于产生一个音频信号，一个声音 信号控制单元，用于将声音信号输出到外部声音设备的声音信号输入端子，并且控制从所述外部声音设备的声音信号输出端子输出的声音信号的路径;混合单元，用于通过混合产生混合声音信号 从所述音频信号产生单元输入的音频信号和通过所述声音信号控制单元输入的声音信号，用于放大从所述混合单元输入的混合声音信号的音频放大单元，以及输出单元，用于输出由 所述音频放大单元。

公开(公告)号：US20130329489A1

公开(公告)日：2013-12-12

申请号：US13832101

申请日：2013-03-15

Applicant: HYE-JIN KIM ,  Sang-Kyu Kang ,  Dong-Hyun Sohn ,  Dong-Min Kim ,  Kyu-Chan Lee

Inventor： HYE-JIN KIM ,  Sang-Kyu Kang ,  Dong-Hyun Sohn ,  Dong-Min Kim ,  Kyu-Chan Lee

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C5/147 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1697

Abstract: A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.

Abstract translation: MRAM包括自旋转移转矩磁随机存取存储器（STT-MRAM）单元的存储单元阵列和通常连接到多个STT-MRAM单元的源极线。 源极线电压发生器响应于外部电源电压产生源极线驱动电压，并将源极线驱动电压提供给源极线。

公开(公告)号：US09036406B2

公开(公告)日：2015-05-19

申请号：US13832101

申请日：2013-03-15

Applicant: Hye-Jin Kim ,  Sang-Kyu Kang ,  Dong-Hyun Sohn ,  Dong-Min Kim ,  Kyu-Chan Lee

Inventor： Hye-Jin Kim ,  Sang-Kyu Kang ,  Dong-Hyun Sohn ,  Dong-Min Kim ,  Kyu-Chan Lee

IPC: G11C11/00 ,  G11C11/16 ,  G11C5/14

CPC classification number: G11C11/1675 ,  G11C5/147 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1697

Abstract: A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.

Abstract translation: MRAM包括自旋转移转矩磁随机存取存储器（STT-MRAM）单元的存储单元阵列和通常连接到多个STT-MRAM单元的源极线。 源极线电压发生器响应于外部电源电压产生源极线驱动电压，并将源极线驱动电压提供给源极线。

公开(公告)号：US20120073287A1

公开(公告)日：2012-03-29

申请号：US12958046

申请日：2010-12-01

Applicant: Sang Kyu Kang ,  Hyung Jin Kim ,  Jong Kyu Lee ,  Jaeheon Kim

Inventor： Sang Kyu Kang ,  Hyung Jin Kim ,  Jong Kyu Lee ,  Jaeheon Kim

IPC: F02D23/00

CPC classification number: F02B37/16 ,  F02D23/00 ,  Y02T10/144

Abstract: A turbocharger having an anti-surge valve may include a compressor that may be disposed at an intake line to compress intake air, and the anti-surge valve that selectively fluid-connects the downstream and the upstream of the compressor to circulate the intake air from the downstream to the upstream of the intake line, wherein a passage communicating with the downstream of the intake line may be formed in the anti-surge valve and the intake air flowing through the passage may be supplied to an edge portion outside a rotation center of a blade of the compressor.

Abstract translation: 具有防喘振阀的涡轮增压器可以包括可以设置在进气管线处以压缩进气的压缩机，以及选择性地流体连接压缩机的下游和上游的防喘振阀，以使来自 下游到进气管路的上游，其中与进气管路的下游连通的通道可以形成在防喘振阀中，并且流过通道的进气可以被供给到外部旋转中心的边缘部分 压缩机的叶片。

公开(公告)号：US07906787B2

公开(公告)日：2011-03-15

申请号：US12545795

申请日：2009-08-21

Applicant: Sang-Kyu Kang

Inventor： Sang-Kyu Kang

IPC: H01L27/15

CPC classification number: H01L33/08 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44

Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract translation: 本发明涉及一种高亮度的氮化物微型发光二极管（LED）及其制造方法。 本发明提供了一种具有高亮度的氮化物微型LED及其制造方法，其中在基板上形成多个微尺寸的发光柱10，诸如SiO2，Si3N4，DBR（ZrO2 / SiO2HfO2 / SiO 2），聚酰胺等填充在微尺寸的发光柱之间的间隙中，通过CMP处理使发光体列阵列的顶面11和间隙填充材料平坦化，然后将具有大尺寸的透明电极6 在其上形成区域，从而可以同时驱动所有发光柱。 另外，本发明提供了一种具有高亮度的氮化物微型LED，其中通过采用倒装芯片结构来增强微尺寸发光柱阵列上电极形成的均匀性。

公开(公告)号：US07595511B2

公开(公告)日：2009-09-29

申请号：US10567482

申请日：2003-08-08

Applicant: Sang-Kyu Kang

Inventor： Sang-Kyu Kang

IPC: H01L33/00 ,  H01L29/18

CPC classification number: H01L33/08 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44

Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2 HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract translation: 本发明涉及一种高亮度的氮化物微型发光二极管（LED）及其制造方法。 本发明提供了一种具有高亮度的氮化物微型LED及其制造方法，其中在基板上形成多个微小尺寸的发光柱10，诸如SiO 2，Si 3 N 4，DBR（ZrO 2 / SiO 2 HfO 2 / SiO 2），聚酰胺等填充在微小尺寸的发光柱之间的间隙中，通过CMP处理将发光体列阵的顶表面11和间隙填充材料平坦化，然后将透明电极6 在其上形成大面积，从而可以同时驱动所有的发光支柱。 另外，本发明提供了一种具有高亮度的氮化物微型LED，其中通过采用倒装芯片结构来增强微尺寸发光柱阵列上电极形成的均匀性。