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1.发明申请公开(公告)号：US20200219720A1
公开(公告)日：2020-07-09
申请号：US16812593
申请日：2020-03-09
Applicant: APPLIED MATERIALS, INC.
Inventor： BEN-LI SHEU , BENCHERKI MEBARKI , JOUNG JOO LEE , ISMAIL EMESH , ROEY SHAVIV , XIANMIN TANG
IPC: H01L21/027 , H01L21/768 , H01L21/02 , H01L21/285 , C23C16/455
Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.
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公开(公告)号：US20150357171A1
公开(公告)日：2015-12-10
申请号：US14707825
申请日：2015-05-08
Applicant: APPLIED MATERIALS, INC.
Inventor： XIANMIN TANG , JOUNG JOO LEE , GUOJUN LIU
CPC classification number: H01J37/3447 , C23C14/35 , H01J37/3405 , H01J37/345 , H01J37/3452 , H01J2237/3322 , H01L21/02104
Abstract: Methods and apparatus for improved metal ion filtering are provided herein. In some embodiments, a substrate processing apparatus includes: a chamber body and a chamber lid disposed on the chamber body defining a processing region within the chamber body beneath the lid; a collimator disposed in the processing region; a power source coupled to the collimator; and a first set of magnets disposed around the chamber body above the collimator and a second set of magnets disposed around the chamber body and below the collimator that together create a guidance magnetic field that is substantially orthogonal to the collimator.
Abstract translation: 本文提供了改进金属离子过滤的方法和装置。 在一些实施例中，基板处理装置包括：室主体和设置在室主体上的室盖，其限定盖体下方的室主体内的处理区域; 设置在处理区域中的准直器; 耦合到所述准直器的电源; 以及设置在准直器上方的腔室主体周围的第一组磁体和设置在腔室主体周围并在准直器下方的第二组磁体，其一起产生基本上与准直器正交的引导磁场。
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公开(公告)号：US20210320064A1
公开(公告)日：2021-10-14
申请号：US17356717
申请日：2021-06-24
Applicant: APPLIED MATERIALS, INC.
Inventor： SUKETU A. PARIKH , RONG TAO , ROEY SHAVIV , JOUNG JOO LEE , SESHADRI GANGULI , SHIRISH PETHE , DAVID GAGE , JIANSHE TANG , MICHAEL A STOLFI
IPC: H01L23/528 , H01L21/67 , H01L23/532 , H01L21/02 , H01L21/321 , H01L21/768 , H01L23/522
Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.
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4.发明申请公开(公告)号：US20200255937A1
公开(公告)日：2020-08-13
申请号：US16541688
申请日：2019-08-15
Applicant: APPLIED MATERIALS, INC.
Inventor： BENCHERKI MEBARKI , BYEONG CHAN LEE , HUIXIONG DAI , TEJINDER SINGH , JOUNG JOO LEE , XIANMIN TANG
Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.
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公开(公告)号：US20200051798A1
公开(公告)日：2020-02-13
申请号：US16515785
申请日：2019-07-18
Applicant: APPLIED MATERIALS, INC.
Inventor： BENCHERKI MEBARKI , JOUNG JOO LEE , XIANMIN TANG
IPC: H01J37/34
Abstract: Collimator assemblies and process chambers for processing substrates including collimator assemblies are provided herein. In some embodiments, a collimator assembly may include a first cylindrical divider, a second cylindrical divider nested entirely within the first cylindrical divider, and a third cylindrical divider nested entirely within the second cylindrical divider, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant. In some embodiments, a process chamber for processing substrates may include a magnetron source, a target supported by a target backing plate cathode disposed below the magnetron source, and a collimator assembly having a plurality of nested cylindrical dividers, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant.
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Patent Agency Ranking
公开(公告)号：US20190353919A1
公开(公告)日：2019-11-21
申请号：US16414975
申请日：2019-05-17
Applicant: APPLIED MATERIALS, INC.
Inventor： BENCHERKI MEBARKI , JOUNG JOO LEE , FARZAD HOUSHMAND , ANANTHA SUBRAMANI , KEITH MILLER , XIANMIN TANG , PRASHANTH KOTHNUR
Abstract: Multi-zone collimators and process chambers including multi-zone collimators for use with a multi-zone magnetron source are provided herein. In some embodiments, a multi-zone collimator for use with a multi-zone magnetron source, comprising a first collimator plate, a second collimator plate, wherein a first collimator zone having a first width is formed between the first collimator plate and the second collimator plate; and a third collimator plate, wherein a second collimator zone having a second width is formed between the second first collimator plate and the third collimator plate, wherein a length of each of the first, second and third collimator plates are different from each other.
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7.发明申请公开(公告)号：US20190287772A1
公开(公告)日：2019-09-19
申请号：US16351651
申请日：2019-03-13
Applicant: APPLIED MATERIALS, INC.
Inventor： JOUNG JOO LEE , Bencherki Mebarki , Xianmin Tang , KEITH MILLER , SREE RANGASAI KESAPRAGADA , Sudarsan Srinivasan
Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, a method for PVD includes providing a first stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface and rotating and linearly scanning the substrate through the stream of first material to deposit the first material on all features formed on the substrate, providing a second stream of an ionized dopant species from a dopant source towards the surface of the substrate at a second non-perpendicular angle to the plane of the substrate surface, and implanting the ionized dopant species in the first material deposited only on a top portion and a portion of the first and second sidewalls of all the features on the substrate by rotating and linearly scanning the substrate via the substrate support.
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8.发明申请公开(公告)号：US20140263169A1
公开(公告)日：2014-09-18
申请号：US13837261
申请日：2013-03-15
Applicant: APPLIED MATERIALS, INC.
Inventor： JOUNG JOO LEE , WILLIAM JOHANSON , KEITH A. MILLER , ALAN A. RITCHIE
IPC: C23C16/50 , C23C16/52 , H01J37/302 , H01J37/305
CPC classification number: C23C14/34 , C23C14/50 , C23C16/4585 , H01J37/32091 , H01J37/34 , H01L21/3065 , H01L21/68764
Abstract: In some embodiments, a method for processing a substrate in a process chamber having a substrate support configured to move in a direction perpendicular to a top surface of a cover ring of a process kit may include positioning the substrate support in a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring of a process kit disposed about the periphery of the substrate support; performing a plasma deposition process while the substrate support is in the first position; moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring; and performing a plasma etch process while the substrate support is in the second position.
Abstract translation: 在一些实施例中，用于处理具有基板支撑件的处理室中的基板的方法，所述基板支撑件被配置为在垂直于处理套件的盖环的顶表面的方向上移动，可以包括将基板支撑件定位在第一位置，使得 基板的顶表面位于围绕衬底支撑件的周边设置的处理套件的覆盖环的顶表面下方约至10mm的约3mm处; 在衬底支撑件处于第一位置时执行等离子体沉积工艺; 将衬底支撑件移动到第二位置，使得衬底的顶表面设置在覆盖环的顶表面上方约15mm至约15mm处; 以及在衬底支撑件处于第二位置时执行等离子体蚀刻工艺。
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公开(公告)号：US20210020569A1
公开(公告)日：2021-01-21
申请号：US16516817
申请日：2019-07-19
Applicant: APPLIED MATERIALS, INC.
Inventor： SUKETU A. PARIKH , RONG TAO , ROEY SHAVIV , JOUNG JOO LEE , SESHADRI GANGULI , SHIRISH PETHE , DAVID GAGE , JIANSHE TANG , MICHAEL A. STOLFI
IPC: H01L23/528 , H01L23/522 , H01L23/532 , H01L21/02 , H01L21/321 , H01L21/768 , H01L21/67
Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.
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10.发明申请公开(公告)号：US20190287791A1
公开(公告)日：2019-09-19
申请号：US15924821
申请日：2018-03-19
Applicant: APPLIED MATERIALS, INC.
Inventor： BEN-LI SHEU , BENCHERKI MEBARKI , JOUNG JOO LEE , ISMAIL EMESH , ROEY SHAVIV , XIANMIN TANG
IPC: H01L21/027 , H01L21/768 , C23C16/455 , H01L21/285 , H01L21/02
Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.
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