公开(公告)号：US12203171B2

公开(公告)日：2025-01-21

申请号：US17861750

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Shankar Venkataraman ,  Jay D. Pinson, II ,  Jang-Gyoo Yang ,  Nitin K. Ingle ,  Qiwei Liang

IPC: C23C16/56 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US12181801B2

公开(公告)日：2024-12-31

申请号：US17531108

申请日：2021-11-19

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Hyunjun Kim ,  Ellie Y. Yieh

IPC: G03F7/38 ,  H01J37/32

Abstract: A method and apparatus for performing post-exposure bake operations is described herein. The apparatus includes a plate stack and enables formation of a first high ion density plasma before the ion concentration within the first high ion density plasma is reduced using a diffuser to form a second low ion density plasma. The second low ion density plasma is an electron cloud or a dark plasma. An electric field is formed between a substrate support and the diffuser and through the second low ion density plasma during post-exposure bake of a substrate disposed on the substrate support. The second low ion density plasma electrically couples the substrate support and the diffuser during application of the electric field. The plate stack is equipped with power supplies and insulators to enable the formation or modification of a plasma within three regions of a process chamber.

公开(公告)号：US11725274B2

公开(公告)日：2023-08-15

申请号：US16433064

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet ,  Qiwei Liang ,  Adib Khan

IPC: C23C16/02 ,  C23C16/04 ,  H01L21/67 ,  H01L21/687 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02 ,  H01J37/32 ,  H01L21/677 ,  H01L21/8234

CPC classification number: C23C16/042 ,  C23C16/02 ,  C23C16/45502 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32899 ,  H01L21/0228 ,  H01L21/02263 ,  H01L21/02299 ,  H01L21/02304 ,  H01L21/6719 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/68785 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/823431

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20220172948A1

公开(公告)日：2022-06-02

申请号：US17672305

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Erica Chen ,  Qiwei Liang ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.

公开(公告)号：US20210104374A1

公开(公告)日：2021-04-08

申请号：US16733299

申请日：2020-01-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Ellie Yieh ,  Douglas Buchberger ,  Chentsau Chris Ying

IPC: H01J37/09 ,  H01J37/305 ,  H01J37/20

Abstract: Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

公开(公告)号：US10704141B2

公开(公告)日：2020-07-07

申请号：US16383354

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Sultan Malik ,  Srinivas D. Nemani ,  Qiwei Liang ,  Adib Khan ,  Maximillian Clemons

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/22 ,  C23C16/30 ,  H01J37/32 ,  C23C16/24 ,  C23C16/455

Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.

公开(公告)号：US20190385823A1

公开(公告)日：2019-12-19

申请号：US16511990

申请日：2019-07-15

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  B05B1/18 ,  C23C16/455 ,  C23C16/452 ,  B05B1/00

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US10431427B2

公开(公告)日：2019-10-01

申请号：US15858891

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/67

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas are divided into a plurality of groups of monopole antennas, and the AC power source is configured to generate AC power on a plurality of power supply lines at a plurality of different phases, and different groups of monopole antennas are coupled to different power supply lines.

公开(公告)号：US20190244792A1

公开(公告)日：2019-08-08

申请号：US16268488

申请日：2019-02-05

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Rohit Sharma ,  Jingyu Qiao

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/455

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/45591 ,  H01J37/32357 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including a first plate and a second plate. The first plate may define a plurality of first apertures, and the second plate may define a plurality of second apertures in a first region of the second plate and a plurality of third apertures in a second region of the second plate. The second apertures may align with the first apertures. An area defined by the second region may be less than an area defined by the first region. The second plate may be sealingly coupled with the first plate to define a volume between the first plate and the second plate. The volume may be fluidly accessible from the third apertures, and fluidly isolated from the first and second apertures.

公开(公告)号：US10358715B2

公开(公告)日：2019-07-23

申请号：US15173356

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet ,  Qiwei Liang ,  Adib Khan

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677 ,  H01L21/8234 ,  H01L21/687 ,  C23C16/02 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.