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    METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY
    5.
    发明申请
    METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY 审中-公开
    提高过程均匀性的方法和系统

    公开(公告)号：US20160148821A1

    公开(公告)日：2016-05-26

    申请号：US14554250

    申请日：2014-11-26

    Applicant: Applied Materials, Inc.

    Inventor： Saravjeet Singh ,  Alan Tso ,  Jingchun Zhang ,  Zihui Li ,  Hanshen Zhang ,  Dmitry Lubomirsky

    IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

    CPC classification number: H01J37/32724 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32715 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069

    Abstract: A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

    Abstract translation: 半导体处理室可以包括远程等离子体区域和与远程等离子体区域流体耦合的处理区域。 处理区域可以被配置为将基板容纳在支撑基座上。 支撑基座可以包括在基座的内部区域处的第一材料。 支撑基座还可以包括与基座的远侧部分或基座的外部区域联接的环形构件。 环形构件可以包括不同于第一材料的第二材料。

    Dry-etch for selective tungsten removal
    7.
    发明授权
    Dry-etch for selective tungsten removal 有权
    干蚀刻用于选择性钨去除

    公开(公告)号：US08980763B2

    公开(公告)日：2015-03-17

    申请号：US13840206

    申请日：2013-03-15

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Zihui Li ,  Anchuan Wang

    IPC: H01L21/302 ,  H01L21/3213 ,  H01J37/32

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/02049 ,  H01L21/32136

    Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

    Abstract translation: 描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。 包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

    DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL
    8.
    发明申请
    DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL 有权
    干燥剂用于选择性去除钨粉

    公开(公告)号：US20140154889A1

    公开(公告)日：2014-06-05

    申请号：US13840206

    申请日：2013-03-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Xikun Wang ,  Ching-Mei Hsu ,  Nitin K. Ingle ,  Zihui Li ,  Anchuan Wang

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/02049 ,  H01L21/32136

    Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

    Abstract translation: 描述了相对于含硅膜（例如氧化硅，氮化碳和（多）硅）选择性地蚀刻钨的方法以及氧化钨。 这些方法包括由含氟前体和/或氢（H 2）形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。 等离子体流出物与暴露的表面反应并选择性地去除钨，同时非常缓慢地除去其它暴露的材料。 包括顺序和同时的方法以除去例如由于暴露于大气中而产生的薄氧化钨。

    SELECTIVE ETCHING OF SILICON-AND-GERMANIUM-CONTAINING MATERIALS WITH INCREASED SURFACE PURITIES
    9.
    发明申请
    SELECTIVE ETCHING OF SILICON-AND-GERMANIUM-CONTAINING MATERIALS WITH INCREASED SURFACE PURITIES 有权

    公开(公告)号：US20250112051A1

    公开(公告)日：2025-04-03

    申请号：US18375207

    申请日：2023-09-29

    Applicant: Applied Materials, Inc.

    Inventor： Jiayin Huang ,  Zihui Li ,  Yi Jin ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/3065 ,  H01L21/02

    Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A first layer of silicon-and-germanium-containing material, a second layer of silicon-and-germanium-containing material, and a layer of silicon-containing material may be disposed on the substrate. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may oxidize at least a portion of the second layer of silicon-and-germanium-containing material. The methods may include providing a first etchant precursor to the processing region and contacting the substrate with the first etchant precursor. The contacting may selectively etch the first layer of silicon-and-germanium-containing material. The methods may include providing a second etchant precursor to the processing region. The methods may include contacting the substrate with the second etchant precursor. The contacting may etch a portion of the layer of silicon-containing material.

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