公开(公告)号：US10720337B2

公开(公告)日：2020-07-21

申请号：US16040859

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Rene Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67

Abstract: An etching process is provided that includes a pre-clean process to remove a surface oxide of a dielectric material. The removal of the oxide can be executed through a thermal reaction and/or plasma process before the etch process. In some embodiments, the removal of the oxide increases etch process control and reproducibility and can improve the selectivity versus oxides.

公开(公告)号：US20250006489A1

公开(公告)日：2025-01-02

申请号：US18754246

申请日：2024-06-26

Applicant: ASM IP Holding B.V.

Inventor： Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Viljami Pore ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/517 ,  H01J37/32

Abstract: The disclosure relates to methods of depositing a material comprising silicon in a gap. The method comprises providing a substrate, the substrate comprising the gap, wherein the gap comprises an inner surface and exposing the substrate to a first plasma having high ion energy to modify predetermined areas of the gap inner surface. The method further comprises exposing the substrate to a second plasma having low ion energy to passivate the modified areas of the gap surface to form passivated modified areas on the gap surface and contacting the substrate with a vapor-phase silicon precursor to chemisorb the silicon precursor on unmodified areas of the gap for depositing material comprising silicon on the unmodified areas. The current disclosure further relates to a method of controlling chemisorption of a vapor-phase silicon precursor on a substrate, and to a semiconductor processing assembly for performing the methods according to the current disclosure.

公开(公告)号：US20220359215A1

公开(公告)日：2022-11-10

申请号：US17724337

申请日：2022-04-19

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Masaru Hori ,  Nobuyoshi Kobayashi ,  Yoshinori Oda ,  Charles Dezelah

IPC: H01L21/3065 ,  H01L21/02 ,  C23C16/455

Abstract: The current disclosure relates to processes for selectively etching material from one surface of a semiconductor substrate over another surface of the semiconductor substrate. The disclosure further relates to assemblies for etching material from a surface of a semiconductor substrate. In the processes, a substrate comprising a first surface and a second surface is provided into a reaction chamber, an etch-priming reactant is provided into the reaction chamber in vapor phase; reactive species generated from plasma are provided into the reaction chamber for selectively etching material from the first surface. The etch-priming reactant is deposited on the first surface and the etch-priming reactant comprises a halogenated hydrocarbon. The halogenated hydrocarbon may comprise a head group and a tail group, and one or both of them may be halogenated.

公开(公告)号：US10720334B2

公开(公告)日：2020-07-21

申请号：US16041044

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Rene Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  C23C16/02 ,  B81C1/00 ,  C30B31/00 ,  C30B33/08 ,  C30B33/12 ,  H01L21/311 ,  H01L21/308 ,  H01L21/3105

Abstract: In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

公开(公告)号：US20200027740A1

公开(公告)日：2020-01-23

申请号：US16041044

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Rene Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/3065 ,  H01L21/3213

Abstract: In some embodiments, a selective cyclic (optionally dry) etching of a first surface of a substrate relative to a second surface of the substrate in a reaction chamber by chemical atomic layer etching comprises forming a modification layer using a first plasma and etching the modification layer. The first surface comprises carbon and/or nitride and the second surface does not comprise carbon and/or nitride.

公开(公告)号：US20220375744A1

公开(公告)日：2022-11-24

申请号：US17747197

申请日：2022-05-18

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/40

Abstract: Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.

公开(公告)号：US20180350620A1

公开(公告)日：2018-12-06

申请号：US15987755

申请日：2018-05-23

Applicant: ASM IP Holding B.V.

Inventor： Masaru Zaitsu ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi ,  Masaru Hori ,  Takayoshi Tsutsumi

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.

公开(公告)号：US09793135B1

公开(公告)日：2017-10-17

申请号：US15210256

申请日：2016-07-14

Applicant: ASM IP Holding B.V. ,  National University Corporation Nagoya University

Inventor： Masaru Zaitsu ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi ,  Masaru Hori ,  Hiroki Kondo ,  Takayoshi Tsutsumi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a halogen-containing film using reactive species on the target layer on the substrate; and etching the halogen-containing film using a plasma of a non-halogen etching gas, which plasma alone does not substantially etch the target layer, to generate etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.

公开(公告)号：US12027365B2

公开(公告)日：2024-07-02

申请号：US17530983

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Sunja Kim ,  Viljami Pore ,  Jia Li Yao ,  Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32 ,  H01L21/762

CPC classification number: H01L21/02315 ,  C23C16/0254 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76224 ,  H01J37/32082 ,  H01J2237/332

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

公开(公告)号：US20230386792A1

公开(公告)日：2023-11-30

申请号：US18143652

申请日：2023-05-05

Applicant: ASM IP Holding B.V.

Inventor： Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32357 ,  H01L21/31116 ,  H01J2237/334

Abstract: The current disclosure relates to methods of selectively etching material from a first surface of a substrate relative to a second surface of the substrate. The method includes providing the substrate having a first surface comprising an etchable material, and a second surface comprising a non-etchable material in a reaction chamber, providing hydrogen-containing plasma into the reaction chamber to reduce the etchable material to a predetermined depth; and providing remotely-generated reactive halogen species and hydrogen into the reaction chamber to selectively etch the reduced etchable material. The disclosure further relates to methods of selectively etching at least two different etchable materials simultaneously from a surface of a substrate relative to a non-etchable material on the same substrate, to methods of simultaneous differential etching of three or more etchable materials on a substrate, as well as to assemblies for processing semiconductor substrates.