公开(公告)号：US4111725A

公开(公告)日：1978-09-05

申请号：US794336

申请日：1977-05-06

申请人： Alfred Yi Cho ,  James Vincent DiLorenzo ,  Gerard Edward Mahoney

发明人： Alfred Yi Cho ,  James Vincent DiLorenzo ,  Gerard Edward Mahoney

IPC分类号： H01L21/203 ,  H01L21/306 ,  H01L21/338 ,  H01L29/812 ,  H01L21/20

CPC分类号： H01L29/66863 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/30612 ,  H01L29/812 ,  Y10S148/051 ,  Y10S438/969

摘要： MBE growth of epitaxial layers on selected areas of a growth surface (e.g., wafer or epi-layer grown thereon) is achieved by masking portions of the surface with an amorphous material and directing molecular beams at the masked surface so that a polycrystalline layer deposits on the mask and an epi-layer grows in the unmasked zones. The mask material is then exposed to a suitable etchant effective to dissolve that material, lift-off the polycrystalline layer and expose the underlying surface. Self-aligned contacts can be fabricated by depositing a metal layer prior to etching. Subsequent lift-off removes both the polycrystalline layer and the overlying metal. This process can be utilized in the fabrication of FETs and opto-electronic devices such as double heterostructure junction lasers.

公开(公告)号：US06836499B2

公开(公告)日：2004-12-28

申请号：US10155562

申请日：2002-05-24

申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Mariano Troccoli

发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Mariano Troccoli

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/026 ,  H01S5/1064 ,  H01S5/12 ,  H01S5/3402 ,  H01S5/50

摘要： Techniques for amplifying light produced by a quantum cascade laser are described. An assembly according to the present invention includes an optical amplifier having an optical input and an optical output. The optical output has an area significantly greater than that of the optical output and the geometry of the amplifier is such that the amplifier widens from the optical input to the optical output. The optical amplifier is formed of a layered waveguide structure which achieves quantum confinement of electrons and photons within the active region. A distributed feedback laser is suitably coupled to the optical amplifier at the optical input of the amplifier. The widening of the amplifier makes available a large number of electrons, so that the amplifier is able to produce many photons resulting from stimulated transitions caused by introduction of light to the optical input of the amplifier, even if the great majority of the transitions occur nonradiatively.

摘要翻译： 描述用于放大由量子级联激光器产生的光的技术。 根据本发明的组件包括具有光输入和光输出的光放大器。 光输出具有明显大于光输出的面积，并且放大器的几何形状使得放大器从光输入增宽到光输出。 光放大器由层状波导结构形成，其在有源区内实现电子和光子的量子限制。 分布式反馈激光器适当地耦合到放大器的光输入处的光放大器。 放大器的加宽使得可以获得大量的电子，使得放大器能够产生由于通过向放大器的光输入引入光引起的受激变换而产生的许多光子，即使绝大多数的跃迁是非辐射的 。

公开(公告)号：US06728282B2

公开(公告)日：2004-04-27

申请号：US09883542

申请日：2001-06-18

申请人： Federico Capasso ,  Alfred Yi Cho ,  Rafaelle Colombelli ,  Claire F. Gmachl ,  Hock Min Ng ,  Deborah Lee Sivco

发明人： Federico Capasso ,  Alfred Yi Cho ,  Rafaelle Colombelli ,  Claire F. Gmachl ,  Hock Min Ng ,  Deborah Lee Sivco

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/3402 ,  H01S5/3422 ,  H01S5/4087 ,  H01S2301/18

摘要： An optical device includes a stack of at least two different intersubband (ISB) optical sub-devices in which the gain/loss profiles of the individual ISB sub-devices are mutually adapted, or engineered, so as to generate a predetermined overall function for the combination. We define this combination device as being heterogeneous since not all of the individual ISB sub-devices are identical to one another. Illustratively, the parameters of each individual ISB sub-device that might be subject to this engineering process include: the peak energy of the ISB optical transitions (emission or absorption) associated with each RT region, the position of each sub-device in the stack; the oscillator strengths of these ISB transitions; the energy bandwidth of each transition; and the total length of the RT and I/R regions of each ISB sub-device. In one embodiment, our approach may be used to engineer a gain profile that has peaks at a multiplicity of different wavelengths, thus realizing a multi-wavelength ISB optical source in which the applied electric field self-proportions itself so that each individual ISB sub-device experiences the appropriate field strength for its particular design. Alternatively, the gain profile may be engineered to be relatively flat over a predetermined wavelength range. In another embodiment, our approach may be used to generate a function that compensates for a characteristic of another device. For example, our heterogeneous ISB device may be engineered to have a gain profile that compensates for the loss profile of another device. Alternatively, the gain/loss profile may be engineered to produce a nonlinear refractive index profile in our device that compensates for that of another device (e.g., an optical fiber).

摘要翻译： 光学装置包括至少两个不同的子带间（ISB）光学子装置的叠层，其中各个ISB子装置的增益/损耗曲线相互适应或设计，以便产生预定的整体功能 组合。 我们将此组合设备定义为异构，因为并非所有的单个ISB子设备都是相同的。 示例性地，可能受该工程过程影响的各个ISB子设备的参数包括：与每个RT区域相关联的ISB光学跃迁（发射或吸收）的峰值能量，堆叠中每个子设备的位置 ; 这些ISB转换的振荡器强度; 每个过渡的能量带宽; 以及每个ISB子设备的RT和I / R区域的总长度。 在一个实施例中，我们的方法可以用于设计在多个不同波长处具有峰值的增益分布，从而实现多波长ISB光源，其中所施加的电场自身比例，使得每个单独的ISB子载波， 设备体验其特定设计的适当场强。 或者，增益分布可以被设计为在预定波长范围上相对平坦。 在另一个实施例中，我们的方法可以用于产生补偿另一设备的特性的功能。 例如，我们的异构ISB设备可以被设计为具有补偿另一设备的丢失简档的增益简档。 或者，增益/损耗曲线可以被设计为在我们的装置中产生非线性折射率分布，其补偿另一装置（例如，光纤）的折射率分布。

公开(公告)号：US06400744B1

公开(公告)日：2002-06-04

申请号：US09512757

申请日：2000-02-25

申请人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachi ,  Ruedeger Koehler ,  Deborah Lee Sivco ,  Alessandro Tredicucci

发明人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachi ,  Ruedeger Koehler ,  Deborah Lee Sivco ,  Alessandro Tredicucci

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/06216 ,  H01S5/0622 ,  H01S5/1046 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/3402

摘要： An article comprising a QC-DFB laser is disclosed. In the QC-DFB laser, an overlying grating structure achieves relatively strong coupling of the guided mode to the grating, and is thus highly effective in inducing single-mode operation even under cw operating conditions. The grating structure includes grooves etched in a plasmon-enhanced confinement layer (PECL) disposed adjacent and in contact with an upper metallic electrode. The grating structure and the PECL are designed such that in the grooves, the laser mode travelling in the waveguide can couple efficiently to the surface-plasmon at the electrode interface. This results in strong modulation of the laser mode, leading to strong modulation of, inter alia, the effective refractive index.

摘要翻译： 公开了一种包含QC-DFB激光器的物品。 在QC-DFB激光器中，上覆光栅结构实现了相对较强的导光模式与光栅的耦合，因此即使在cw操作条件下也可以很好地实现单模操作。 光栅结构包括蚀刻在与上金属电极相邻并接触的等离子体增强约束层（PECL）中的凹槽。 光栅结构和PECL被设计成使得在凹槽中，在波导中传播的激光模式可以在电极界面处有效地耦合到表面等离子体。 这导致激光模式的强调制，导致特别是有效折射率的强调制。

公开(公告)号：US5745516A

公开(公告)日：1998-04-28

申请号：US744292

申请日：1996-11-06

申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Carlo Sirtori ,  Deborah Lee Sivco

发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Carlo Sirtori ,  Deborah Lee Sivco

IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/3402 ,  H01S5/34306 ,  H01S5/34313

摘要： The novel unipolar laser resembles a quantum cascade laser but utilizes radiative transitions between upper and lower minibands of superlattices, with injection of charge carriers from the lower miniband into the upper miniband of the adjacent downstream superlattice facilitated by a multilayer injector region. The lasing wavelength is typically in the mid-infrared, selectable by choice of the superlattice parameters. The novel laser is potentially well suited for high power operation, since it utilizes carrier transport in minibands, as opposed to tunneling between discrete energy states.

摘要翻译： 新型单极激光器类似于量子级联激光器，但是利用上层和下层超晶格之间的辐射跃迁，其中通过多层注入器区域促进相邻下游超晶格的较低的微型载流子的电荷载流子注入到上部微型物质中。 激光波长通常在中红外，可以通过选择超晶格参数来选择。 新颖的激光器潜在地非常适用于大功率操作，因为它利用了迷你频带中的载波传输，而不是离散能量状态之间的隧穿。

公开(公告)号：US3969164A

公开(公告)日：1976-07-13

申请号：US605041

申请日：1975-08-15

申请人： Alfred Yi Cho ,  Joseph Charles Tracy, Jr.

发明人： Alfred Yi Cho ,  Joseph Charles Tracy, Jr.

IPC分类号： C23G1/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/203 ,  H01L21/316

CPC分类号： H01L21/02054 ,  H01L21/02046 ,  H01L21/02052 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/118 ,  Y10S148/169 ,  Y10S438/974

摘要： Surface contamination of Group III(a)-V(a) substrates prior to epitaxial growth can influence structural, optical, and electrical properties of the resulting layers. Of the common contaminants, sulfur, nitrogen, carbon, and oxygen, which are found on substrate surfaces, only carbon cannot be removed by simple heating. By passivating the substrate surface with a native oxide coating after chemical etching and before atmospheric exposure, the carbon-containing contamination can be virtually eliminated since these compounds have low sticking coefficients on the native oxide. The oxide can then be readily stripped off by heating in a vacuum to leave essentially an atomically clean substrate surface.

摘要翻译： 在外延生长之前，组III（a）-V（a）衬底的表面污染可影响所得层的结构，光学和电学性质。 在基板表面上发现的常见污染物中，硫，氮，碳和氧，只能通过简单的加热来除去碳。 通过在化学蚀刻之后和大气暴露之前用自然氧化物涂层钝化衬底表面，由于这些化合物在天然氧化物上具有低粘附系数，因此可以实际上消除含碳污染物。 然后可以通过在真空中加热容易地除去氧化物，从而基本上留下原子清洁的基底表面。

公开(公告)号：US3941624A

公开(公告)日：1976-03-02

申请号：US563078

申请日：1975-03-28

申请人： Alfred Yi Cho

发明人： Alfred Yi Cho

IPC分类号： C30B23/02 ,  H01L21/203 ,  H01L21/363

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02631 ,  Y10S148/018 ,  Y10S148/02 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/169

摘要： In order to insure that the doping profiles of Sn-doped Group III(a)-V(a) Ga-containing layers grown by molecular beam epitaxy follow relatively closely the time-intensity profile of the dopant beam, the substrate temperature should not exceed about 550.degree.C.

摘要翻译： 为了确保通过分子束外延生长的Sn掺杂的III族（a）-V（a）Ga含Ga层的掺杂分布相对紧密地遵循掺杂剂束的时间 - 强度分布，衬底温度不应超过 约550℃

公开(公告)号：US06690699B2

公开(公告)日：2004-02-10

申请号：US10081313

申请日：2002-02-21

申请人： Federico Capasso ,  Alfred Yi Cho ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Deborah Lee Sivco ,  Mariano Troccoli

发明人： Federico Capasso ,  Alfred Yi Cho ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Deborah Lee Sivco ,  Mariano Troccoli

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/06256 ,  H01S5/2231 ,  H01S5/3402

摘要： An optical gain medium has first and second active layers and an injector layer interposed between the first and second active layers. The active layers have upper minibands and lower minibands. The injector layer has a miniband that transports charge carriers from the lower miniband of the first active layer to an excited state in the upper miniband of the second active layer in response to application of a voltage across the optical gain medium.

摘要翻译： 光学增益介质具有第一和第二有源层以及置于第一和第二有源层之间的注入层。 活性层具有上部迷你型和较低级的迷你型。 喷射器层具有响应于跨越光学增益介质施加电压的电荷载流子将电荷载流子从第一有源层的较低微波传输到第二有源层的上部微波段中的激发态。

公开(公告)号：US06333944B1

公开(公告)日：2001-12-25

申请号：US09591716

申请日：2000-06-12

申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Evgueni E. Narimanov ,  Alfred Douglas Stone

发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Evgueni E. Narimanov ,  Alfred Douglas Stone

IPC分类号： H01S3083

CPC分类号： H01S3/083

摘要： A solid state laser comprises a cavity resonator in the form of a generally cylindrical body and, located within the resonator, an active region which generates lasing light when suitably pumped. The resonator has a relatively high effective refractive index (n>2 and typically n>3) is sufficiently deformed from circularity so as to support at least one librational mode (e.g., a V-shaped or a bow-tie mode, the latter being presently preferred for generating relatively high power, directional outputs). Specifically described is a Group III-V compound semiconductor, quantum cascade (QC), micro-cylinder laser in which the resonator has a flattened quadrupolar deformation from circularity. This laser exhibits both a highly directional output emission and a three-order of magnitude increase in optical output power compared to conventional semiconductor micro-cylinder QC lasers having circularly symmetric resonators.

摘要翻译： 固体激光器包括呈大致圆柱形体形式的空腔谐振器，并且位于谐振器内部的有源区域，其在适当泵浦时产生激光。 谐振器具有相对较高的有效折射率（n> 2且通常n> 3）从圆形度充分变形，以便支持至少一种示范模式（例如，V形或蝴蝶结模式，后者为 目前优选用于产生相对高功率的方向输出）。 具体描述的是其中谐振器具有从圆形度的扁平四极变形的III-V族化合物半导体，量子级联（QC），微圆柱激光器。 与具有圆形对称谐振器的常规半导体微型气缸QC激光器相比，该激光器表现出高度方向性的输出发射和光输出功率三位数的增加。

公开(公告)号：US06324199B1

公开(公告)日：2001-11-27

申请号：US09195260

申请日：1998-11-18

申请人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

发明人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/3402

摘要： An intersubband semiconductor light source comprises a core region that includes a unipolar, radiative transition (RT) region having upper and lower energy levels, an injector-only (I) region disposed on one side of the RT region, and a reflector/extractor-only (R/E) region disposed on the other side of the RT region. The I region has a first miniband of energy levels aligned so as to inject electrons into the upper energy level, and the R/E region has a second miniband of energy levels aligned so as to extract electrons from the lower energy level. The R/E region also has a minigap aligned so as to inhibit the extraction of electrons from the upper level. A suitable voltage applied across the core region is effective to cause the RT region to generate light at a wavelength determined by the energy difference between the upper and lower energy levels. Low voltage operation at less than 3 V is described.

摘要翻译： 子带间半导体光源包括芯区域，其包括具有上和下能级的单极辐射跃迁（RT）区域，设置在RT区域的一侧上的仅注射器（I）区域，以及反射器/ （R / E）区域设置在RT区域的另一侧。 I区具有对准能量水平的第一小能级以将电子注入到上能量级中，并且R / E区具有对准的能级的第二小容纳，从而从较低的能级提取电子。 R / E区域也具有微小的栅极排列，从而抑制从上层提取电子。 在芯区域上施加的合适电压有效地使得RT区域产生由上和下能量级之间的能量差确定的波长的光。 描述低于3V的低电压操作。