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公开(公告)号：US20100140670A1
公开(公告)日：2010-06-10
申请号：US12628889
申请日：2009-12-01
CPC分类号： H01L27/0617 , B81C1/00246 , H01L27/12
摘要： A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer.
摘要翻译： 形成与MEMS器件集成的CMOS电路的方法包括将晶片接合到具有形成于CMOS电路的触点的顶表面层。 然后从CMOS电路的顶表面或底表面中的一个去除处理晶片，并且MEMS器件形成在剩余的硅层中。
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公开(公告)号：US08299506B2
公开(公告)日：2012-10-30
申请号：US12628889
申请日：2009-12-01
IPC分类号： H01L29/84
CPC分类号： H01L27/0617 , B81C1/00246 , H01L27/12
摘要： A method of forming CMOS circuitry integrated with MEMS devices includes bonding a wafer to a top surface layer having contacts formed to CMOS circuitry. A handle wafer is then removed from one of the top or bottom surfaces of the CMOS circuitry, and MEMS devices are formed in a remaining silicon layer.
摘要翻译： 形成与MEMS器件集成的CMOS电路的方法包括将晶片接合到具有形成于CMOS电路的触点的顶表面层。 然后从CMOS电路的顶表面或底表面中的一个去除处理晶片，并且MEMS器件形成在剩余的硅层中。
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公开(公告)号：US07703313B2
公开(公告)日：2010-04-27
申请号：US11675043
申请日：2007-02-14
申请人： Robert E. Higashi
发明人： Robert E. Higashi
IPC分类号： G01N25/00
CPC分类号： B81B3/0081 , B01L3/5027 , B01L3/502707 , B01L2200/14 , B01L2300/0627 , B01L2300/0816 , B01L2300/1827 , B81B2201/051 , B81B2201/058 , G01N30/6095 , G01N2030/025
摘要： Embodiments of the invention relate to a fluid containment structure for a micro analyzer comprising one or more shelled thermal structures in contact with a thermally isolated component of the analyzer and wherein the shelled thermal structure comprises a conformal film and also comprises three walls of a channel and the thermally isolated component forms the fourth wall.
摘要翻译： 本发明的实施例涉及一种用于微分析器的流体容纳结构，其包括与分析仪的热隔离部件接触的一个或多个外壳热结构，并且其中所述带壳热结构包括保形膜，并且还包括三个通道壁和 热隔离部件形成第四壁。
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公开(公告)号：US07391147B2
公开(公告)日：2008-06-24
申请号：US10735531
申请日：2003-12-12
申请人： Barrett E. Cole , Robert E. Higashi
发明人： Barrett E. Cole , Robert E. Higashi
IPC分类号： H05H7/06
CPC分类号： G01J1/429
摘要： A light detector having a cathode wafer, a cavity wafer and an anode wafer. The cathode wafer may be bonded to one side of the cavity wafer and the anode wafer may be bonded to another side of the cavity wafer. The cathode wafer may have numerous cathodes, the anode wafer numerous anodes and the cavity wafer numerous cavities which may be aligned on a one-to-one basis to form a wafer structure of a plurality of detectors which may be diced into separable detector chips. When there is a voltage potential across a cathode and an anode, and a gas such as Ne or the like in the cavity, a reception of light such as ultra violet may result in an electronic discharge between the cathode and anode of the light detector.
摘要翻译： 具有阴极晶片，空腔晶片和阳极晶片的光检测器。 阴极晶片可以结合到空腔晶片的一侧，并且阳极晶片可以结合到空腔晶片的另一侧。 阴极晶片可以具有许多阴极，阳极晶片许多阳极和空腔晶片可以在一对一的基础上对准多个空腔，以形成可以切成可分离的检测器芯片的多个检测器的晶片结构。 当在阴极和阳极之间存在电压电势，并且在空腔中存在诸如Ne等的气体时，诸如紫外线的光的接收可能导致光检测器的阴极和阳极之间的电子放电。
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公开(公告)号：US07230432B2
公开(公告)日：2007-06-12
申请号：US11151902
申请日：2005-06-14
申请人： Barrett E. Cole , Robert E. Higashi
发明人： Barrett E. Cole , Robert E. Higashi
IPC分类号： G01N27/62
CPC分类号： G01N27/4146 , Y10S977/953
摘要： A sensor having a nanotube grown on and supported by thermal bimorph structures. The nanotube rests on a heat sink during sensing gas or a liquid and is moved from the heat sink when the nanotube is heated to desorb gas or liquid from it. The heatsink may function as a gate along with the bimorph structures as the other terminals of a transistor. Current-voltage and current-gate voltage characteristics may be obtained of the nanotube as a device like a transistor. These characteristics may provide information on a gas or liquid absorbed by the nanotube.
摘要翻译： 具有生长在热双晶体结构上并由其支撑的纳米管的传感器。 在感测气体或液体期间，纳米管位于散热器上，并且当加热纳米管以从其中解吸气体或液体时，其从散热器移动。 作为晶体管的其他端子，散热器可以与双压电晶片结构一起作为栅极。 作为像晶体管的器件，可以获得电流 - 电压和电流 - 栅极电压特性。 这些特性可以提供关于纳米管吸收的气体或液体的信息。
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公开(公告)号：US07145143B2
公开(公告)日：2006-12-05
申请号：US10749710
申请日：2003-12-31
CPC分类号： G01J3/26 , G01B11/272 , G01J3/36 , G01J3/427 , G01J5/023 , G01J5/10 , G01J5/20 , G02B5/284 , G02B26/001 , H01L27/14621 , H01L31/02024 , H01L31/02162 , H01L31/02325 , H01L2224/48091 , H01L2224/73204 , H01L2924/00014
摘要： A tunable bolometer device for detecting infrared light (IR) from a target at specific frequencies and in a broadband mode. The device may have an array of pixels of which each is controllable to be sensitive to a particular wavelength of light that is selected and detected. The detection of particular frequencies on a pixel level may result in spectral analysis of the target. Further, each pixel of the bolometer via an associated etalon may be tuned to detect a different frequency of IR or be switched to broadband detection of IR. The device may be packaged in an integrated vacuum package where the etalon array becomes the topcap which is bonded to the wafer containing the bolometer array.
摘要翻译： 一种用于在特定频率和宽带模式下从目标检测红外光（IR）的可调式辐射热量计装置。 该装置可以具有其每个可控制的像素阵列，以对被选择和检测的特定波长的光敏感。 像素级别上的特定频率的检测可能导致目标的频谱分析。 此外，测辐射热计的每个像素通过相关联的标准具可被调谐以检测IR的不同频率或被切换到IR的宽带检测。 该器件可以封装在集成的真空封装中，其中标准具阵列变成顶盖，其结合到包含测辐射热计阵列的晶片。
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7.发明授权
公开(公告)号：US5449910A
公开(公告)日：1995-09-12
申请号：US153066
申请日：1993-11-17
CPC分类号： H01L27/16
摘要： An infrared imaging array of thermoelectric sensors has a plurality of electrically connected microbridge subsensors comprising each sensor of the array. Each subsensor consists of a short span microbridge lying across a relatively small pit. The use of many of such subsensors for each sensor rather than a single large area microbridge sensor for a single pixel allows each pixel to be made large enough to give good sensitivity in either vacuum or gas-filled designs, and at the same time avoid the reduced fabrication yield which results when sensors span large pits.
摘要翻译： 热电传感器的红外成像阵列具有包括阵列的每个传感器的多个电连接的微桥子载体。 每个子传感器由跨越较小坑的短跨度微桥组成。 对于每个传感器而言，对于每个传感器而不是单个大面积微桥传感器使用许多这样的子传感器，允许每个像素被制成足够大以在真空或气体填充的设计中提供良好的灵敏度，并且同时避免 当传感器跨越大坑时，导致制造成品率降低。
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公开(公告)号：US4966037A
公开(公告)日：1990-10-30
申请号：US782188
申请日：1985-10-01
CPC分类号： G01P5/12 , G01F1/696 , H01L37/02 , H01L27/0211
摘要： A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising a thermal-to-electric transducer or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface so that the predetermined configuration is cantilevered over the depression, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.
摘要翻译： 一种半导体器件，包括半导体本体，其具有形成在本体的第一表面中的凹陷。 该装置还包括构件装置，该构件装置包括热电转换器或静电电元件，该构件装置具有悬挂在该凹部上的预定构型。 所述构件装置连接到所述第一表面，使得所述预定构型在所述凹部上悬臂，所述凹部开口至所述第一表面围绕所述预定构型的至少一部分。 凹陷在元件和半导体本体之间提供了实质的物理和热隔离。 以这种方式，集成半导体器件提供在换能器或元件与半导体主体之间的实质物理和热隔离的环境。
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公开(公告)号：US4696188A
公开(公告)日：1987-09-29
申请号：US773106
申请日：1985-09-06
申请人： Robert E. Higashi
发明人： Robert E. Higashi
摘要： A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising first and second thermal-to-electric transducer or static electric element, the member means having a predetermined configuration suspended over the depression. The member means is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the elements and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.
摘要翻译： 一种半导体器件，包括半导体本体，其具有形成在本体的第一表面中的凹陷。 该装置还包括包括第一和第二热电转换器或静电元件的构件装置，该构件装置具有悬挂在该凹部上的预定构型。 所述构件装置至少在一个位置处连接到所述第一表面，所述凹部开口至所述第一表面围绕所述预定构造的至少一部分。 凹陷提供元件和半导体本体之间的实质物理和热隔离。 以这种方式，集成半导体器件提供在换能器或元件与半导体主体之间的实质物理和热隔离的环境。
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公开(公告)号：US4651564A
公开(公告)日：1987-03-24
申请号：US858832
申请日：1986-04-29
CPC分类号： G01F1/6845
摘要： A flow sensor comprising a pair of thin film heat sensors and a thin film heater is disclosed. A base supports the sensors and heater out of contact with the base with the sensors disposed on opposite sides of the heater. Also disclosed is a semiconductor device comprising a thin film member which comprises an electrical element. The device further comprises a semiconductor body supporting the thin film member out of contact with the body and apparatus for electrically pulsing the electrical element. Such devices are the basis for many types of apparatus, including flow sensors.
摘要翻译： 公开了一种包括一对薄膜热传感器和薄膜加热器的流量传感器。 基座支撑传感器和加热器与基座不接触，传感器设置在加热器的相对两侧。 还公开了一种半导体器件，其包括具有电元件的薄膜部件。 该装置还包括一个半导体本体，该半导体本体支撑着与本体不接触的薄膜构件和用于电气脉冲电气元件的装置。 这种设备是许多类型的设备的基础，包括流量传感器。
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